TEMD7000X0 284 DESCRIPTION TEMD7000X0 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device (SMD) including the chip with a 0.23 mm 2 sensitive area detecting visible and near infrared radiation. FEATURES Package type: surface mount Package form: 0805 Dimensions (L x W x H in mm): 2 x.25 x 0.85 Radiant sensitive area (in mm 2 ): 0.23 AEC-Q0 qualified High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: ϕ = ± 60 Floor life: 68 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Find out more about Vishay s Automotive Grade Product requirements at: www.vishay.com/applications APPLICATIONS High speed photo detector PRODUCT SUMMARY COMPONENT I ra (µa) ϕ (deg) λ 0. (nm) TEMD7000X0 3 ± 60 350 to 20 Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD7000X0 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage 60 V Power dissipation T amb 25 C P V 25 mw Junction temperature T j 00 C Operating temperature range T amb - 40 to + 00 C Storage temperature range T stg - 40 to + 00 C Soldering temperature Acc. reflow solder profile fig. 8 T sd 260 C Thermal resistance junction/ambient Acc. J-STD-05 R thja 270 K/W T amb = 25 C, unless otherwise specified Document Number: 895 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev..2, 6-Dec-09
TEMD7000X0 BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I F = 50 ma V F V Breakdown voltage I R = 00 µa, E = 0 V (BR) 32 V Reverse dark current = 0 V, E = 0 I ro 0 na Diode capacitance = 0 V, f = MHz, E = 0 C D 4 pf = 5 V, f = MHz, E = 0 C D.3 pf Open circuit voltage E e = mw/cm 2, λ = 950 nm V o 350 mv Temperature coefficient of V o E e = mw/cm 2, λ = 950 nm TK Vo - 2.6 mv/k Short circuit current E e = mw/cm 2, λ = 950 nm I k 3 µa Temperature coefficient of I k E e = mw/cm 2, λ = 950 nm TK Ik 0. %/K Reverse light current E e = mw/cm 2, λ = 950 nm, = 5 V I ra 3 µa Angle of half sensitivity ϕ ± 60 deg Wavelength of peak sensitivity λ p 900 nm Range of spectral bandwidth λ 0. 350 to 20 nm Rise time Fall time T amb = 25 C, unless otherwise specified BASIC CHARACTERISTICS T amb = 25 C, unless otherwise specified = 0 V, R L = kω, λ = 820 nm = 0 V, R L = kω, λ = 820 nm t r 00 ns t f 00 ns I ro - Reverse Dark Current (na) 000 00 0 = 0 V 20 40 60 80 00 94 8427 T amb - Ambient Temperature ( C) Fig. - Reverse Dark Current vs. Ambient Temperature I ra, rel - Relative Reverse Light Current.4.2.0 0.8 = 5 V λ = 950 nm 0.6 0 20 40 60 80 00 94 846 T amb - Ambient Temperature ( C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 895 2 Rev..2, 6-Dec-09
TEMD7000X0 I ra - Reverse Light Current (µa) 0 0. 0.0 0.00 0.0 0. 0 2535 = 5 V λ = 950 nm E e - Irradiance (mw/cm 2 ) Fig. 3 - Reverse Light Current vs. Irradiance S (λ) rel - Relative Spectral Sensitivity.2.0 0.8 0.6 0.4 0.2 0 400 500 600 700 800 900 000 00 2553 λ - Wavelength (nm) Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 00 0 0 20 30 I ra - Reverse Light Current (µa) 0 λ = 950 nm mw/cm 2 I e, rel - Relative Radiant Intensity.0 0.9 0.8 0.7 40 50 60 70 80 ϕ - Angular Displacement 0. 0 00 7026 - Reverse Voltage 94 803 0.6 0.4 0.2 0 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 8 C D - Diode Capacitance (pf) 6 4 2 E = 0 f = MHz 94 8430 0 0. 0 - Reverse Voltage (V) 00 Fig. 5 - Diode Capacitance vs. Reverse Voltage Document Number: 895 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev..2, 6-Dec-09 3
TEMD7000X0 REFLOW SOLDER PROFILE Temperature ( C) 300 max. 260 C 250 255 C 240 C 245 C 27 C 200 max. 30 s 50 max. 20 s max. 00 s 00 DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 68 h Conditions: T amb < 30 C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. 50 max. ramp up 3 C/s max. ramp down 6 C/s 0 0 50 00 50 200 250 300 984 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 92 h at 40 C (+ 5 C), RH < 5 %. PACKAGE DIMENSIONS in millimeters 2008 www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 895 4 Rev..2, 6-Dec-09
TEMD7000X0 BLISTER TAPE DIMENSIONS in millimeters 250 Document Number: 895 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev..2, 6-Dec-09 5
TEMD7000X0 REEL DIMENSIONS in millimeters 20875 www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 895 6 Rev..2, 6-Dec-09
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