NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

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Transcription:

Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2 Features Low V CEsat Breakthrough In Small Signal (BISS) transistors in push-pull configuration Application-optimized pinout Space-saving solution Internal connections to minimize layout effort Reduces component count.3 Applications Power bipolar transistor driver Output current booster for operational amplifier.4 Quick reference data Table. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity V CEO collector-emitter voltage open base - - 40 V I C collector current - - A I CM peak collector current single pulse; t p ms - - 2 A

2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol base TR, TR2 2 collector TR2 6 5 4 6 3 collector TR2 TR 4 emitter TR, TR2 2 3 5 collector TR 6 collector TR 5 4 TR2 2 3 006aaa659 3. Ordering information Table 3. Ordering information Type number Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code 9F _ Product data sheet Rev. 0 26 September 2006 2 of 6

5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 6034). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity V CBO collector-base voltage open emitter - 40 V V CEO collector-emitter voltage open base - 40 V I C collector current - A I CM peak collector current single pulse; - 2 A t p ms I BM peak base current - 0.3 A single pulse; - A t p ms Per device P tot total power dissipation T amb 25 C - 330 mw [2] - 400 mw [3] - 580 mw T j junction temperature - 50 C T amb ambient temperature 65 +50 C T stg storage temperature 65 +50 C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint. 600 P tot (mw) 400 () 006aaa784 200 0 75 25 25 75 25 75 T amb ( C) () Ceramic PCB, Al 2 O 3, standard footprint FR4 PCB, mounting pad for collector cm 2 FR4 PCB, standard footprint Fig. Power derating curves _ Product data sheet Rev. 0 26 September 2006 3 of 6

6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from in free air - - 380 K/W junction to ambient [2] - - 35 K/W [3] - - 25 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint. 0 3 Z th(j-a) (K/W) 0 2 0 duty cycle = 0.75 0.5 0.33 0.2 0. 0.05 0.02 0.0 006aaa785 0 0 0 5 0 4 0 3 0 2 0 0 2 0 3 t p (s) Fig 2. FR4 PCB, standard footprint Transient thermal impedance from junction to ambient as a function of pulse duration; typical values _ Product data sheet Rev. 0 26 September 2006 4 of 6

0 3 Z th(j-a) (K/W) 0 2 0 duty cycle = 0.75 0.5 0.33 0.2 0. 0.05 0.02 0.0 006aaa786 0 0 0 5 0 4 0 3 0 2 0 0 2 0 3 t p (s) Fig 3. FR4 PCB, mounting pad for collector cm 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 0 3 Z th(j-a) (K/W) 0 2 0 duty cycle = 0.75 0.5 0.33 0.2 0. 0.05 0.02 0.0 006aaa787 0 0 0 5 0 4 0 3 0 2 0 0 2 0 3 t p (s) Fig 4. Ceramic PCB, Al 2 O 3, standard footprint Transient thermal impedance from junction to ambient as a function of pulse duration; typical values _ Product data sheet Rev. 0 26 September 2006 5 of 6

7. Characteristics Table 7. Characteristics T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per NPN transistor I CBO collector-base cut-off V CB =40V; I E = 0 A - - 00 na current V CB =40V; I E =0A; - - 50 µa T j = 50 C h FE DC current gain V CE =5V; I C = ma 300 450 - V CE =5V; I C = 200 ma 300 450 830 V CE =5V; I C = 500 ma 300 400 - V CE =5V; I C =A 200 340 - V CE =5V; I C =2A 75 20 - V CEsat collector-emitter I C = 00 ma; I B = 5 ma - 30 80 mv saturation voltage I C = 500 ma; I B =50mA - 00 20 mv I C = A; I B = 00 ma - 80 230 mv I C = 2 A; I B = 200 ma - 360 440 mv V BEsat base-emitter I C = 00 ma; I B = 5 ma - 0.75 0.9 V saturation voltage I C = 500 ma; I B =50mA - 0.9. V I C = A; I B = 00 ma -.2 V I C = 2 A; I B = 200 ma -..3 V V BE base-emitter voltage V CE =5V; I C = A 700 800 00 mv Per PNP transistor I CBO collector-base cut-off V CB = 40 V; I E =0A - - 00 na current V CB = 40 V; I E =0A; - - 50 µa T j = 50 C h FE DC current gain V CE = 5 V; I C = ma 300 450 - V CE = 5 V; I C = 200 ma 250 390 640 V CE = 5 V; I C = 500 ma 25 290 - V CE = 5 V; I C = A 50 200 - V CE = 5 V; I C = 2 A 50 85 - V CEsat collector-emitter I C = 00 ma; I B = 5 ma - 40 40 mv saturation voltage I C = 500 ma; I B = 50 ma - 0 70 mv I C = A; I B = 00 ma - 200 30 mv I C = 2 A; I B = 200 ma - 400 500 mv V BEsat base-emitter I C = 00 ma; I B = 5 ma - 0.75 0.9 V saturation voltage I C = 500 ma; I B = 50 ma - 0.88. V I C = A; I B = 00 ma - 0.95.2 V I C = 2 A; I B = 200 ma -..3 V V BE base-emitter voltage V CE = 5 V; I C = A 700 800 00 mv _ Product data sheet Rev. 0 26 September 2006 6 of 6

Table 7. Characteristics continued T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per device t d delay time I C = 0.5 A; V I =8V - 3 - ns t r rise time - 7 - ns t on turn-on time - 20 - ns t s storage time - 3 - ns t f fall time - 6 - ns t off turn-off time - 9 - ns Pulse test: t p 300 µs; δ 0.02. _ Product data sheet Rev. 0 26 September 2006 7 of 6

800 h FE 600 () 006aaa788 I C (A) 2.4.6 IB (ma) = 7 5.3 3.6.9 0.2 8.5 006aaa793 6.8 5. 400 3.4 200 0.8.7 0 0 0 0 2 0 3 0 4 0 0 2 3 4 5 V CE (V) Fig 5. V CE =5V () T amb = 00 C T amb =25 C T amb = 55 C TR (NPN): DC current gain as a function of collector current; typical values Fig 6. T amb =25 C TR (NPN): Collector current as a function of collector-emitter voltage; typical values.0 006aaa789.2 006aaa792 V BE (V) 0.8 () V BEsat (V).0 () 0.6 0.8 0.6 0.4 0.4 Fig 7. 0.2 0 0 0 2 0 3 0 4 V CE =5V () T amb = 55 C T amb =25 C T amb = 00 C TR (NPN): Base-emitter voltage as a function of collector current; typical values Fig 8. 0.2 0 0 0 2 0 3 0 4 I C /I B =20 () T amb = 55 C T amb =25 C T amb = 00 C TR (NPN): Base-emitter saturation voltage as a function of collector current; typical values _ Product data sheet Rev. 0 26 September 2006 8 of 6

006aaa790 006aaa79 V CEsat (V) V CEsat (V) 0 () 0 () 0 2 0 2 0 0 0 2 0 3 0 4 I C /I B =20 () T amb = 00 C T amb =25 C T amb = 55 C Fig 9. TR (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 0 3 0 0 0 2 0 3 0 4 T amb =25 C () I C /I B = 00 I C /I B =50 I C /I B =0 Fig 0. TR (NPN): Collector-emitter saturation voltage as a function of collector current; typical values _ Product data sheet Rev. 0 26 September 2006 9 of 6

800 h FE 600 400 () 006aaa794 2.4 I C (A).6 IB (ma) = 24 2.6 9.2 6.8 4.4 2 006aaa799 9.6 7.2 4.8 200 0.8 2.4 0 0 0 2 0 3 0 4 V CE = 5 V () T amb = 00 C T amb =25 C T amb = 55 C Fig. TR2 (PNP): DC current gain as a function of collector current; typical values 0 0 2 3 4 5 V CE (V) T amb =25 C Fig 2. TR2 (PNP): Collector current as a function of collector-emitter voltage; typical values.0 006aaa795.2 006aaa798 V BE (V) 0.8 () V BEsat (V).0 () 0.6 0.8 0.6 0.4 0.4 0.2 0 0 0 2 0 3 0 4 V CE = 5 V () T amb = 55 C T amb =25 C T amb = 00 C Fig 3. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values 0.2 0 0 0 2 0 3 0 4 I C /I B =20 () T amb = 55 C T amb =25 C T amb = 00 C Fig 4. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values _ Product data sheet Rev. 0 26 September 2006 0 of 6

006aaa796 006aaa797 V CEsat (V) V CEsat (V) 0 () 0 () 0 2 0 2 0 0 0 2 0 3 0 4 I C /I B =20 () T amb = 00 C T amb =25 C T amb = 55 C Fig 5. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 0 3 0 0 0 2 0 3 0 4 T amb =25 C () I C /I B = 00 I C /I B =50 I C /I B =0 Fig 6. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 8. Test information V CC oscilloscope VI (probe) 450 Ω R DUT TR V O TR2 RE (probe) 450 Ω oscilloscope 006aaa858 I C = 0.5 A; V I =8V; R=56Ω; R E =5Ω Fig 7. Test circuit for switching times _ Product data sheet Rev. 0 26 September 2006 of 6

9. Package outline 3. 2.7. 0.9 6 5 4 0.6 0.2 3.0 2.5.7.3 pin index Dimensions in mm 2 3 0.95.9 0.40 0.25 0.26 0.0 04--08 Fig 8. Package outline SOT457 (SC-74) 0. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 2NC ordering code. Type number Package Description Packing quantity 3000 0000 SOT457 4 mm pitch, 8 mm tape and reel; T [2] -5-35 4 mm pitch, 8 mm tape and reel; T2 [3] -25-65 For further information and the availability of packing methods, see Section 4. [2] T: normal taping [3] T2: reverse taping _ Product data sheet Rev. 0 26 September 2006 2 of 6

. Soldering 3.45.95 3.30 0.95 2.825 0.45 0.55 solder lands solder resist occupied area solder paste.60.70 3.0 3.20 msc422 Dimensions in mm Fig 9. Reflow soldering footprint SOT457 (SC-74) 5.30 solder lands 5.05 0.45.45 4.45 solder resist occupied area solder paste MSC423.40 4.30 Dimensions in mm Fig 20. Wave soldering footprint SOT457 (SC-74) _ Product data sheet Rev. 0 26 September 2006 3 of 6

2. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes _ 20060926 Product data sheet - - _ Product data sheet Rev. 0 26 September 2006 4 of 6

3. Legal information 3. Data sheet status Document status [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 3.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 3.3 Disclaimers General Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6034) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 3.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 4. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com _ Product data sheet Rev. 0 26 September 2006 5 of 6

5. Contents Product profile........................... General description.......................2 Features...............................3 Applications............................4 Quick reference data..................... 2 Pinning information...................... 2 3 Ordering information..................... 2 4 Marking................................ 2 5 Limiting values.......................... 3 6 Thermal characteristics................... 4 7 Characteristics.......................... 6 8 Test information........................ 9 Package outline........................ 2 0 Packing information..................... 2 Soldering............................. 3 2 Revision history........................ 4 3 Legal information....................... 5 3. Data sheet status...................... 5 3.2 Definitions............................ 5 3.3 Disclaimers........................... 5 3.4 Trademarks........................... 5 4 Contact information..................... 5 5 Contents.............................. 6 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 26 September 2006 Document identifier: _

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