Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 DESIGN SUPPORT TOOLS click logo to get started FEATURES Silicon epitaxial planar diode Fast switching diodes AEC-Q qualified available Base P/N-HG - green, AEC-Q qualfied Base P/N-G - green, commercial grade Material categorization: for definitions of compliance please see www.vishay.com/doc?999 MECHANICAL DATA Case: SOD- Weight: approx. mg Packaging codes / options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box Models Available PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS -08 or -8 N8WS-HG N8WS-HG-08 or N8WS-HG-8 Single AH Tape and reel ABSOLUTE MAXIMUM RATINGS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 7 V Repetitive peak reverse voltage V RRM 0 Average rectified current half wave rectification with resistive load () f 0 Hz I F(AV) ma Surge forward current t < s and T j = C I FSM 0 Power dissipation () P tot 00 mw Note () Valid provided that electrodes are kept at ambient temperature. THERMAL CHARACTERISTICS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air () R thja 60 K/W Junction temperature T j C Storage temperature range T stg -6 to + C Operating temperature range T op - to + C Note () Valid provided that electrodes are kept at ambient temperature Rev.., -Jan-8 Document Number: 8
ELECTRICAL CHARACTERISTICS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I F = ma V F V I F = 0 ma V F. V V R = 0 V I R na Leakage current V R = 7 V I R V R = 0 V I R 0 μa V R = 0 V, T j = C I R 0 Diode capacitance V F = V R = 0 V C D pf Voltage rise when switching ON Reverse recovery time Tested with 0 ma pulses, t p = 0. μs, rise time < 0 ns, f p = ( to 0) khz I F = ma, i R = ma, V R = 6 V, R L = 0 TYPICAL CHARACTERISTICS (T amb = C, unless otherwise specified) V fr. V t rr ns 0 I F (ma) - T j = 0 C T j = C P tot - Power Dissipation (mw) 00 0 0 77-0 V F (V) Fig. - Forward Characteristics 0 0 0 0 00 0 T amb - Ambient Temperature ( C) Fig. - Admissible Power Dissipation vs. Ambient Temperature T j = C f = khz. T j = C f = MHz.0 R f (Ω) C D (V R ) C D (0 V) 0.9 0.8 0.7 78 - - I F (ma) 0 6 8 70 V R (V) Fig. - Dynamic Forward Resistance vs. Forward Current Fig. - Relative Capacitance vs. Reverse Voltage Rev.., -Jan-8 Document Number: 8
I R (na) 7 0 T j ( C) V R = 0 V 0 00 Fig. - Leakage Current vs. Junction Temperature I FRM (A) 0 I n = t P /T T = /f P t P n = 0 T t 0. 0. 0. 0. - - - - - 7 t P (s) I FRM Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev.., -Jan-8 Document Number: 8
PACKAGE DIMENSIONS in millimeters (inches): SOD- 0.0 [0.06] 0. [0.0] 0-8 Cathode bar.9 [0.077].60 [0.06] 0.0 [0.06] 0.0 [0.008]. [0.0] 0.8 [0.0] 0. [0.008] 0. [0.006] 0. [0.00] 0. [0.00] max..8 [0.].0 [0.098]. [0.09]. [0.0] Footprint recommendation: 0.8 [0.0] 0.8 [0.0] Document no.: S8-V-9.0-00 () Created - Date:.August.00 Rev. 6 - Date:.Sept.06 7.6 [0.06] 0.6 [0.0] Rev.., -Jan-8 Document Number: 8
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