DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21
FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification and switching. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT V CEO collector-emitter voltage 40 V I C collector current (DC) 200 ma PINNING DESCRIPTION in a SOT23 plastic package. NPN complement: PMBT3904. MARKING PIN 1 base 2 emitter 3 collector DESCRIPTION TYPE NUMBER MARKING CODE 2A 3 3 Note 1 1. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China. Top view 1 2 MAM256 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE PACKAGE NUMBER NAME DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 2004 Jan 21 2
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 40 V V CEO collector-emitter voltage open base 40 V V EBO emitter-base voltage open collector 6 V I C collector current (DC) 200 ma I CM peak collector current 200 ma I BM peak base current 100 ma P tot total power dissipation T amb 25 C; note 1 250 mw T stg storage temperature 65 +150 C T j junction temperature 150 C T amb operating ambient temperature 65 +150 C Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th(j-a) thermal resistance from junction to ambient note 1 500 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Jan 21 3
CHARACTERISTICS T amb =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I CBO collector cut-off current I E = 0; V CB = 30 V 50 na I EBO emitter cut-off current I C = 0; V EB = 6 V 50 na h FE DC current gain V CE = 1 V; see Fig.2 I C = 0.1 ma 60 I C = 1 ma 80 I C = 10 ma 100 300 I C = 50 ma 60 I C = 100 ma 30 V CEsat collector-emitter saturation I C = 10 ma; I B = 1 ma 250 mv voltage I C = 50 ma; I B = 5 ma 400 mv V BEsat base-emitter saturation voltage I C = 10 ma; I B = 1 ma 850 mv I C = 50 ma; I B = 5 ma 950 mv C c collector capacitance I E =i e = 0; V CB = 5 V; f=1mhz 4.5 pf C e emitter capacitance I C =i c = 0; V EB = 500 mv; 10 pf f = 1 MHz f T transition frequency I C = 10 ma; V CE = 20 V; 250 MHz f = 100 MHz F noise figure I C = 100 µa; V CE = 5 V; R S =1kΩ; f = 10 Hz to 15.7 khz 4 db Switching times (between 10% and 90% levels); see Fig.7 t d delay time I Con = 10 ma; I Bon = 1 ma; 35 ns t r rise time I Boff =1mA 35 ns t s storage time 225 ns t f fall time 75 ns 2004 Jan 21 4
600 h FE MHC459 250 I C (ma) 200 MHC460 400 150 (4) (5) (6) (7) 200 100 (8) 50 (9) (10) 0 10 1 1 10 10 2 10 3 I C (ma) V CE = 1 V. T amb = 150 C. T amb =25 C. T amb = 55 C. Fig.2 DC current gain; typical values. Fig.3 0 0 2 4 6 8 10 V CE (V) T amb =25 C. I B = 1.5 ma. I B = 1.35 ma. I B = 1.2 ma. (4) I B = 1.05 ma. (5) I B = 0.9 ma. (6) I B = 0.75 ma. (7) I B = 0.6 ma. (8) I B = 0.45 ma. Collector current as a function of collector-emitter voltage. (9) I B = 0.3 ma. (10) I B = 0.15 ma. 1200 V BE (mv) 1000 MHC461 1200 V BEsat (mv) 1000 MHC462 800 800 600 600 400 400 200 10 1 1 10 10 2 10 3 I C (ma) 200 10 1 1 10 10 2 10 3 I C (ma) V CE = 1 V. T amb = 55 C. T amb =25 C. T amb = 150 C. I C /I B = 10. T amb = 55 C. T amb =25 C. T amb = 150 C. Fig.4 Base-emitter voltage as a function of collector current. Fig.5 Base-emitter saturation voltage as a function of collector current. 2004 Jan 21 5
10 3 MHC463 V CEsat (mv) 10 2 10 10 1 1 10 10 2 10 3 I C (ma) I C /I B = 10. T amb =25 C. T amb = 150 C. T amb = 55 C. Fig.6 Collector-emitter saturation voltage as a function of collector current. handbook, full pagewidth V BB V CC oscilloscope (probe) 450 Ω R B R C V o (probe) 450 Ω oscilloscope V i R2 DUT R1 MGD624 V i = 5 V; T = 500 µs; t p =10µs; t r =t f 3 ns. R1 = 56 Ω; R2 = 2.5 kω; R B = 3.9 kω; R C = 270 Ω. V BB = 1.9 V; V CC = 3 V. Oscilloscope: input impedance Z i =50Ω. Fig.7 Test circuit for switching times. 2004 Jan 21 6
PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X H E v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 max. 1.1 mm 0.1 0.9 b p c D E e e 1 H E L p Q v w 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ TO-236AB EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2004 Jan 21 7
DATA SHEET STATUS LEVEL DATA SHEET STATUS PRODUCT STATUS DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Jan 21 8
a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp9 Date of release: 2004 Jan 21 Document order number: 9397 750 12535