DISCRETE SEMICONDUCTORS DATA SHEET August 1986
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-a, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage 16,5 V. It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to T h = 25 C in an unneutralized common-emitter class-b circuit MODE OF OPERATION V CE V f MHz P L W c.w. 13,5 175 8 > 12, > 6 2,2 + j,4 96 j28 c.w. 12,5 175 8 typ. 11,5 typ. 65 G p db η % z i Ω Y L ms PIN CONFIGURATION PINNING - SOT12 PIN DESCRIPTION halfpage 1 4 3 c 1 collector 2 emitter 3 base 4 emitter b MBB12 e 2 MSB56 Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (V BE = ) peak value V CESM max. 36 V Collector-emitter voltage (open base) V CEO max. 18 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current (average) I C(AV) max. 1,5 A Collector current (peak value); f > 1 MHz I CM max. 4, A R.F. power dissipation (f > 1 MHz); T mb =25 C P rf max. 2 W Storage temperature T stg 65 to + 15 C Operating junction temperature T j max. 2 C 2 MGP82 3 MGP821 I C (A) P rf (W) 1.5 2 ΙΙΙ ΙΙ derate by.12 W/K 1 T h = 7 C T mb = 25 C 1 Ι.1 W/K.5 5 1 15 V 2 CE (V) 5 T h ( C) 1 I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch Fig.2 D.C. SOAR. Fig.3 R.F. power dissipation; V CE 16,5 V; f > 1 MHz. THERMAL RESISTANCE (dissipation = 8 W; T mb = 73,5 C, i.e. T h = 7 C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 1,7 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) = 8,6 K/W From mounting base to heatsink R th mb-h =,45 K/W August 1986 3
CHARACTERISTICS T j =25 C Collector-emitter breakdown voltage V BE = ; I C = 5 ma V (BR) CES > 36 V Collector-emitter breakdown voltage open base; I C = 25 ma V (BR)CEO > 18 V Emitter-base breakdown voltage open collector; I E = 1 ma V (BR)EBO > 4 V Collector cut-off current V BE = ; V CE = 18 V I CES < 2 ma Second breakdown energy; L = 25 mh; f = 5 Hz open base E SBO >,5 mj R BE =1Ω E SBR >,5 mj D.C. current gain (1) typ. 4 I C =,75 A; V CE =5 V h FE 1 to 1 Collector-emitter saturation voltage (1) I C = 2 A; I B =,4 A V CEsat typ.,85 V Transition frequency at f = 1 MHz (1) I E =,75 A; V CB = 13,5 V f T typ. 95 MHz I E = 2 A; V CB = 13,5 V f T typ. 85 MHz Collector capacitance at f = 1 MHz I E =I e =;V CB = 13,5 V C c typ. 16,5 pf Feedback capacitance at f = 1 MHz I C = 1 ma; V CE = 13,5 V C re typ. 12 pf Collector-stud capacitance C cs typ. 2 pf Note 1. Measured under pulse conditions: t p 2 µs; δ,2. August 1986 4
75 MGP822 3 MGP823 h FE C c (pf) 5 V CE = 13.5 V 2 typ 5 V 25 1 1 2 I 3 C (A) 5 1 V 15 CB (V) Fig.4 Typical values; T j =25 C. Fig.5 I E =I e = ; f = 1 MHz; T j = 25 C. 1 handbook, full pagewidth V CB = 13.5 V MGP824 f T (MHz) 1 V 5 1 2 I E (A) 3 Fig.6 Typical values; f = 1 MHz; T j = 25 C. August 1986 5
APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-b circuit) T h = 25 C f (MHz) V CE (V) P L (W) P S (W) G p (db) I C (A) η (%) z i (Ω) Y L (ms) 175 13,5 8 <,5 > 12, <,99 > 6 2,2 + j,4 96 j28 175 12,5 8 typ. 11,5 typ. 65 handbook, full pagewidth 5 Ω C1 C2 L1 L2 L3 C3 T.U.T. L4 C4 L5 L7 C5 C6 R1 C7 5 Ω L6 +V CC MGP253 Fig.7 Test circuit; c.w. class-b. List of components: C1 = 2,5 to 2 pf film dielectric trimmer (cat. no. 2222 89 74) C2 = C6 = 4 to 4 pf film dielectric trimmer (cat. no. 2222 89 78) C3 = 47 pf ceramic capacitor (5 V) C4 = 12 pf ceramic capacitor (5 V) C5 = 1 nf polyester capacitor C7 = 5 to 6 pf film dielectric trimmer (cat. no. 2222 89 711) L1 = 2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 5,7 mm; leads 2 5 mm L2 = L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 2 3664) L3 = L4 = strip (12 mm 6 mm); tap for C3 at 5 mm from transistor L5 = 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 7,5 mm; leads 2 5 mm L7 = 3 turns Cu wire (1,6 mm); int. dia. 6,5 mm; length 7,4 mm; leads 2 5 mm L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". R1 = 1 Ω carbon resistor Component layout and printed-circuit board for 175 MHz test circuit see Fig.8. August 1986 6
15 handbook, full pagewidth 72 1888MJK C4 L6 C5 R1 +V CC L5 C1 C2 L1 L3 L4 L7 C6 C7 1888MJK L2 C3 rivet MGP825 Fig.8 Component layout and printed-circuit board for 175 MHz test circuit. The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. August 1986 7
15 MGP826 3 MGP827 8 P L (W) 1 T h = 25 C G p (db) 2 T h = 25 C η η (%) 6 7 C T h = 25 C T h = 7 C 5 1 4 7 C G p.5 1 P 1.5 S (W) 2 2.5 4.5 6.5 8.5 1.5 12.5 P L (W) Fig.9 Typical values; f = 175 MHz; V CE = 13,5 V; V CE = 12,5 V. Fig.1 Typical values; f = 175 MHz; V CE = 13,5 V; V CE = 12,5 V. Note to Fig.11: 1 P Lnom (W) VSWR = 1 9 VSWR = 6 MGP828 The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. 8 5 P S P Snom 7 1 1.1 1.2 V CE 1.3 V CEnom 1 2 The graph applies to the situation in which the drive (P S /P Snom ) increases linearly with supply over-voltage ratio. Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; T h =7 C; R th mb-h =,45 K/W; V CEnom = 13,5 V or 12,5 V; P S =P Snom at V CEnom and VSWR = 1. August 1986 8
1 MGP829 15 C L MGP83 r i, x i (Ω) R L (Ω) R L R L C L (pf) 5 r i x i 1 5 r i C L 5 1 x i 5 2 f (MHz) 4 15 2 f (MHz) 4 Typical values; V CE = 13,5 V; P L = 8 W; T h =25 C. Typical values; V CE = 13,5 V; P L = 8 W; T h =25 C. Fig.12 Input impedance (series components). Fig.13 Load impedance (parallel components). 2 G p (db) MGP831 OPERATING NOTE Below 1 MHz a base-emitter resistor of 1 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. 15 1 2 f (MHz) 4 Typical values; V CE = 13,5 V; P L = 8 W; T h =25 C. Fig.14 August 1986 9
PACKAGE OUTLINE Studded ceramic package; 4 leads SOT12A D A Q c N N 1 D 1 D 2 A w 1 M A M W N 3 X M 1 H b detail X L 4 3 H 1 2 5 1 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D 1 D 2 H L M M 1 N N 1 N 3 Q W 5.97 5.9.18 9.73 8.39 9.66 27.44 9. 3.41 1.66 12.83 1.6 3.31 4.35 mm 4.74 5.48.14 9.47 8.12 9.39 25.78 8. 2.92 1.39 11.17. 2.54 3.98 inches.283.248.232.216.7.4.383.373.33.32.38.37 1.8 1.15.354.315.134.115.65.55.55.44.63..13.1.171.157 8-32 UNC w 1.38.15 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT12A 97-6-28 August 1986 1
DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11