Rev. 1 3 August 27 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance 175 C rated Q11 compliant Logic level compatible 1.3 Applications Automotive systems Motors, lamps and solenoids General purpose power switching 12 V, 24 V and 42 V loads 1.4 Quick reference data E DS(AL)S 85 mj I D 23 A R DSon = 45 mω (typ) P tot 75 W 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G) mb mb mounting base; connected to drain (D) D G 1 2 3 4 SOT669 (LFPAK) mbl798 S1 S2 S3
3. Ordering information Table 2. Ordering information Type number Package Name Description Version LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 6134). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage - 1 V V DGR drain-gate voltage (DC) R GS =2kΩ - 1 V V GS gate-source voltage - ±15 V I D drain current T mb =25 C; V GS = 5 V; see Figure 2 and 3-23 A T mb = 1 C; V GS = 5 V; see Figure 2-16 A I DM peak drain current T mb =25 C; pulsed; t p 1 µs; see Figure 3-94 A P tot total power dissipation T mb =25 C; see Figure 1-75 W T stg storage temperature 55 +175 C T j junction temperature 55 +175 C Source-drain diode I DR reverse drain current T mb =25 C - 23 A I DRM peak reverse drain current T mb =25 C; pulsed; t p 1 µs - 94 A Avalanche ruggedness E DS(AL)S non-repetitive drain-source avalanche unclamped inductive load; I D =23A; - 85 mj energy V DS 1 V; V GS =5V; R GS = 5 Ω; starting at T j =25 C E DS(AL)R repetitive drain-source avalanche energy - [1] - [1] Conditions: a) Maximum value not quoted. Repetitive rating defined in Figure 16. b) Single-pulse avalanche rating limited by T j(max) of 175 C. c) Repetitive avalanche rating limited by T j(avg) of 17 C. d) Refer to application note AN1273 for further information. _1 Product data sheet Rev. 1 3 August 27 2 of 12
12 3aab844 3 3aab225 P der (%) I D 8 2 4 1 5 1 15 2 T mb ( C) 5 1 15 2 T mb ( C) P der = P tot ----------------------- 1 % P tot( 25 C) V GS 5V Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Continuous drain current as a function of mounting base temperature 1 3 3aab226 I D 1 2 Limit R DSon = V DS / I D t p = 1 µs 1 1 µs 1 DC 1 ms 1 ms 1 ms 1 1 1 1 1 2 1 3 V DS (V) Fig 3. T mb =25 C; I DM is single pulse. Safe operating area; continuous and peak drain currents as a function of drain-source voltage _1 Product data sheet Rev. 1 3 August 27 3 of 12
5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-mb) thermal resistance from junction to mounting base see Figure 4 - - 2 K/W 1 3aab219 Z th(j mb) (K/W) 1 δ =.5.2.1 1 1.5.2 P t p δ = T t p t single pulse T 1 2 1 6 1 5 1 4 1 3 1 2 1 1 1 t p (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration _1 Product data sheet Rev. 1 3 August 27 4 of 12
6. Characteristics Table 5: Characteristics T j =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown voltage I D =.25 ma; V GS =V T j =25 C 1 - - V T j = 55 C 89 - - V V GS(th) gate-source threshold voltage I D = 1 ma; V DS =V GS ; see Figure 9 and 1 T j =25 C 1.1 1.5 2 V T j = 175 C.5 - - V T j = 55 C - - 2.3 V I DSS drain leakage current V DS = 1 V; V GS =V T j =25 C -.2 1 µa T j = 175 C - - 5 µa I GSS gate leakage current V GS = ±15 V; V DS =V - 2 1 na R DSon drain-source on-state resistance V GS =5V; I D = 1 A; see Figure 6 and 8 T j =25 C - 45 53 mω T j = 175 C - - 132 mω V GS = 4.5 V; I D =1A - - 59 mω V GS = 1 V; I D =1A - 41 49 mω Dynamic characteristics Q G(tot) total gate charge I D = 15 A; V DS =8V; V GS =5V; - 18 - nc Q GS gate-source charge see Figure 14-4.1 - nc Q GD gate-drain charge - 8 - nc C iss input capacitance V GS =V; V DS = 25 V; f = 1 MHz; - 16 213 pf C oss output capacitance see Figure 12-141 17 pf C rss reverse transfer capacitance - 6 82 pf t d(on) turn-on delay time V DS =3V; R L = 2.5 Ω; - 18 - ns t r rise time V GS =5V;R G =1Ω - 26 - ns t d(off) turn-off delay time - 52 - ns t f fall time - 16 - ns Source-drain diode V SD source-drain voltage I S = 25 A; V GS = V; see Figure 15 -.85 1.2 V t rr reverse recovery time I S = 2 A; di S /dt = 1 A/µs; - 71 - ns Q r recovered charge V GS = V; V R =3V - 83 - nc _1 Product data sheet Rev. 1 3 August 27 5 of 12
I D 6 V GS (V) = 15 3aab421 5 4 3.4 56 R DSon (mω) 52 3aab423 4 3.2 3 48 2 2.8 2.6 44 2.4 2.2 2 4 6 8 1 V DS (V) 4 3 6 9 12 15 V GS (V) Fig 5. T j =25 C T j =25 C; I D =2A Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values 1 3aab422 3 3aa29 R DSon (mω) 8 V GS (V) = 3 3.4 3.8 4 5 15 a 2 6 1 4 2 1 2 3 4 5 I D -6 6 12 18 T j ( C) T j =25 C a = R DSon ----------------------------- R DSon( 25 C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature _1 Product data sheet Rev. 1 3 August 27 6 of 12
2.5 3aab986 1 1 3aab987 V GS(th) (V) I D 2. max 1 2 1.5 typ 1 3 min typ max 1. min 1 4.5 1 5. 6 6 12 18 T j ( C) 1 6 1 2 3 V GS (V) Fig 9. I D = 1 ma; V DS =V GS Gate-source threshold voltage as a function of junction temperature T j =25 C; V DS =V GS Fig 1. Sub-threshold drain current as a function of gate-source voltage g fs (S) 5 3aab425 25 C (pf) 2 3aab418 4 15 C iss 3 1 5 C oss C rss 2 5 1 15 2 25 3 I D 1 1 1 1 1 2 V DS (V) T j =25 C; V DS =25V Fig 11. Forward transconductance as a function of drain current; typical values V GS = V; f = 1 MHz Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values _1 Product data sheet Rev. 1 3 August 27 7 of 12
5 3aab424 5 3aab42 I D 4 V GS (V) 4 V DS = 14 V 3 3 V DS = 8 V 2 2 1 T j = 175 C T j = 25 C 1 1 2 3 4 V GS (V) 5 1 15 2 Q G (nc) V DS = 25 V T j =25 C; I D =1A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 14. Gate-source voltage as a function of gate charge; typical values 5 3aab419 1 2 3aab224 I S 4 I AL (1) 3 1 (2) 2 1 T j = 175 C T j = 25 C (3)..2.4.6.8 1. V SD (V) V GS = V Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 1 1 3 1 2 1 1 1 1 t AL (ms) See Table note 1 of Table 3 Limiting values. (1) Single-pulse; T j =25 C. (2) Single-pulse; T j = 15 C. (3) Repetitive. Fig 16. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time _1 Product data sheet Rev. 1 3 August 27 8 of 12
7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 E A A 2 C b 2 c 2 E 1 L 1 b 3 mounting base b 4 D 1 H D L 2 1 2 3 4 e b w M A c X 1/2 e A A 1 C (A ) 3 θ detail X L y C 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A 1.2 1.1 A 1.15. A 2 A 3 b b 2 b 3 b 4 c 1.1.95 c 2 D (1) D 1 (1) max.5 4.41 2.2.9.25.3 4.1 5. 3.3 6.2.85 1.3 1.3.25 4.2 1.27.25.1.35 3.62 2..7.19.24 3.8 4.8 3.1 5.8.4.8.8 Note 1. Plastic or metal protrusions of.15 mm maximum per side are not included. E (1) E 1 (1) e H L L 1 L 2 w y θ 8 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT669 MO-235 4-1-13 6-3-16 Fig 17. Package outline SOT669 (LFPAK) _1 Product data sheet Rev. 1 3 August 27 9 of 12
8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes _1 2783 Product data sheet - - _1 Product data sheet Rev. 1 3 August 27 1 of 12
9. Legal information 9.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 1. Contact information For additional information, please visit: http://www.nexperia.com For sales office addresses, send an email to: salesaddresses@nexperia.com _1 Product data sheet Rev. 1 3 August 27 11 of 12
11. Contents 1 Product profile.......................... 1 1.1 General description...................... 1 1.2 Features.............................. 1 1.3 Applications........................... 1 1.4 Quick reference data..................... 1 2 Pinning information...................... 1 3 Ordering information..................... 2 4 Limiting values.......................... 2 5 Thermal characteristics................... 4 6 Characteristics.......................... 5 7 Package outline......................... 9 8 Revision history........................ 1 9 Legal information....................... 11 9.1 Data sheet status...................... 11 9.2 Definitions............................ 11 9.3 Disclaimers........................... 11 9.4 Trademarks........................... 11 1 Contact information..................... 11 11 Contents.............................. 12 For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 3 August 27