Rev. 03 22 December 2005 Product data sheet 1. General description 2. Features 3. Quick reference data The is a high-speed Si-gate CMOS device and is pin compatible with Low-power Schottky TTL (LSTTL). The has octal non-inverting buffer/line drivers with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. HIGH on noe causes the outputs to assume a high-impedance OFF-state. The 74HC244; 74HCT244 is identical to the 74HC240; 74HCT240 but has non-inverting outputs. Octal bus interface Non-inverting 3-state outputs Complies with JEDEC standard no. 7 ESD protection: HBM EI/JESD22-114-C exceeds 2000 V MM EI/JESD22-115- exceeds 200 V Multiple package options Specified from 40 C to+85 C and from 40 C to +125 C Table 1: Quick reference data GND = 0 V; T amb =25 C; t r =t f = 6 ns Symbol Parameter Conditions Min Typ Max Unit 74HC244 t PHL, t PLH propagation delay nn to nyn V CC =5V; C L =15pF - 9 - ns C i input capacitance - 3.5 - pf C PD power dissipation capacitance per buffer; V I = GND to V CC [1] - 35 - pf 74HCT244 t PHL, t PLH propagation delay nn to nyn V CC =5V; C L =15pF - 11 - ns C i input capacitance - 3.5 - pf C PD power dissipation capacitance per buffer; V I = GND to (V CC 1.5 V) [1] C PD is used to determine the dynamic power dissipation (P D in µw): P D =C PD V 2 CC f i N+ (C L V 2 CC f o ) where: [1] - 35 - pf
f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; V CC = supply voltage in V; N = number of inputs switching; (C L V 2 CC f o ) = sum of outputs. 4. Ordering information Table 2: Ordering information Type number Package Temperature range Name Description Version 74HC244 74HC244N 40 C to +125 C DIP20 plastic dual in-line package; 20 leads (300 mil) SOT146-1 74HC244D 40 C to +125 C SO20 plastic small outline package; 20 leads; SOT163-1 body width 7.5 mm 74HC244DB 40 C to +125 C SSOP20 plastic shrink small outline package; 20 leads; SOT339-1 body width 5.3 mm 74HC244PW 40 C to +125 C TSSOP20 plastic thin shrink small outline package; 20 leads; SOT360-1 body width 4.4 mm 74HC244BQ 40 C to +125 C DHVQFN20 plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 20 terminals; body 2.5 4.5 0.85 mm SOT764-1 74HCT244 74HCT244N 40 C to +125 C DIP20 plastic dual in-line package; 20 leads (300 mil) SOT146-1 74HCT244D 40 C to +125 C SO20 plastic small outline package; 20 leads; SOT163-1 body width 7.5 mm 74HCT244DB 40 C to +125 C SSOP20 plastic shrink small outline package; 20 leads; SOT339-1 body width 5.3 mm 74HCT244PW 40 C to +125 C TSSOP20 plastic thin shrink small outline package; 20 leads; SOT360-1 body width 4.4 mm 74HCT244BQ 40 C to +125 C DHVQFN20 plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 20 terminals; body 2.5 4.5 0.85 mm SOT764-1 Product data sheet Rev. 03 22 December 2005 2 of 22
5. Functional diagram 2 10 1Y0 18 4 11 1Y1 16 6 12 1Y2 14 8 13 1Y3 12 1 1OE 17 20 2Y0 3 15 21 2Y1 5 13 22 2Y2 7 11 23 2Y3 9 19 2OE mna875 Fig 1. Functional diagram 1 EN 10 2 18 1Y0 17 20 3 2Y0 2 4 18 16 11 4 16 1Y1 15 21 5 2Y1 6 8 14 12 12 13 1OE 6 8 1 14 1Y2 12 1Y3 13 22 11 23 19 2OE 7 2Y2 9 2Y3 mna874 19 11 13 15 EN 9 7 5 17 3 mna873 Fig 2. Logic symbol Fig 3. IEC logic symbol Product data sheet Rev. 03 22 December 2005 3 of 22
6. Pinning information 6.1 Pinning 74HC244 74HCT244 terminal 1 index area 1OE VCC 74HC244 74HCT244 10 1 20 2 19 2OE 1OE 10 2Y0 11 1 2 3 4 20 19 18 17 V CC 2OE 1Y0 20 2Y0 11 2Y1 12 3 18 4 17 5 16 6 15 1Y0 20 1Y1 21 2Y1 12 2Y2 13 5 6 7 8 16 15 14 13 1Y1 21 1Y2 22 2Y2 13 2Y3 7 14 8 GND (1) 13 9 12 10 11 1Y2 22 1Y3 2Y3 GND 9 10 12 11 1Y3 23 GND 23 001aae012 001aae011 Transparent top view (1) The die substrate is attached to this pad using conductive die attach material. It can not be used as supply pin or input Fig 4. Pin configuration DIP20, SO20, SSOP20 and TSSOP20 Fig 5. Pin configuration DHVQFN20 6.2 Pin description Table 3: Pin description Symbol Pin Description 1OE 1 1 output enable input (active LOW) 10 2 1 data input 0 2Y0 3 2 bus output 0 11 4 1 data input 1 2Y1 5 2 bus output 1 12 6 1 data input 2 2Y2 7 2 bus output 2 13 8 1 data input 3 2Y3 9 2 bus output 3 GND 10 ground (0 V) 23 11 2 data input 3 1Y3 12 1 bus output 3 22 13 2 data input 2 1Y2 14 1 bus output 2 Product data sheet Rev. 03 22 December 2005 4 of 22
7. Functional description Table 3: Pin description continued Symbol Pin Description 21 15 2 data input 1 1Y1 16 1 bus output 1 20 17 2 data input 0 1Y0 18 1 bus output 0 2OE 19 2 output enable input (active LOW) V CC 20 supply voltage 8. Limiting values 7.1 Function table Table 4: Function table [1] Control Input Output noe nn nyn L L L H H H X Z [1] H = HIGH voltage level; L = LOW voltage level; X = don t care; Z = high-impedance OFF-state. Table 5: Limiting values In accordance with the bsolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit V CC supply voltage 0.5 +7 V I IK input clamping current V I < 0.5 V or V I >V CC + 0.5 V - ±20 m I OK output clamping current V O < 0.5 V or - ±20 m V O >V CC + 0.5 V I O output current V O = 0.5 V to (V CC + 0.5 V) - ±35 m I CC quiescent supply current - 70 m I GND ground current - 70 m T stg storage temperature 65 +150 C P tot total power dissipation DIP20 package [1] - 750 mw SO20 package [2] - 500 mw SSOP20 package [3] - 500 mw TSSOP20 package [3] - 500 mw DHVQFN20 package [4] - 500 mw Product data sheet Rev. 03 22 December 2005 5 of 22
[1] For DIP20 package: P tot derates linearly with 12 mw/k above 70 C. [2] For SO20 package: P tot derates linearly with 8 mw/k above 70 C. [3] For SSOP20 and TSSOP20 packages: P tot derates linearly with 5.5 mw/k above 60 C [4] For DHVQFN20 packages: P tot derates linearly with 4.5 mw/k above 60 C. 9. Recommended operating conditions 10. Static characteristics Table 6: Recommended operating conditions Symbol Parameter Conditions Min Typ Max Unit 74HC244 V CC supply voltage 2.0 5.0 6.0 V V I input voltage 0 - V CC V V O output voltage 0 - V CC V T amb ambient temperature 40 25 +125 C t r, t f input rise and fall time V CC = 2.0 V - - 1000 ns V CC = 4.5 V - 6.0 500 ns V CC = 6.0 V - - 400 ns 74HCT244 V CC supply voltage 4.5 5.0 5.5 V V I input voltage 0 - V CC V V O output voltage 0 - V CC V T amb ambient temperature 40 25 +125 C t r, t f input rise and fall time V CC = 4.5 V - 6.0 500 ns Table 7: Static characteristics 74HC244 t recommended operating conditions; voltages are referenced to GND (ground = 0V). Symbol Parameter Conditions Min Typ Max Unit T amb =25 C V IH HIGH-state input voltage V CC = 2.0 V 1.5 1.2 - V V CC = 4.5 V 3.15 2.4 - V V CC = 6.0 V 4.2 3.2 - V V IL LOW-state input voltage V CC = 2.0 V - 0.8 0.5 V V CC = 4.5 V - 2.1 1.35 V V CC = 6.0 V - 2.8 1.8 V V OH HIGH-state output voltage V I = V IH or V IL - - - I O = 20 µ; V CC = 2.0 V 1.9 2.0 - V I O = 20 µ; V CC = 4.5 V 4.4 4.5 - V I O = 20 µ; V CC = 6.0 V 5.9 6.0 - V I O = 6.0 m; V CC = 4.5 V 3.98 4.32 - V I O = 7.8 m; V CC = 6 V 5.48 5.81 - V Product data sheet Rev. 03 22 December 2005 6 of 22
Table 7: Static characteristics 74HC244 continued t recommended operating conditions; voltages are referenced to GND (ground = 0V). Symbol Parameter Conditions Min Typ Max Unit V OL LOW-state output voltage V I = V IH or V IL I O =20µ; V CC = 2.0 V - 0 0.1 V I O =20µ; V CC = 4.5 V - 0 0.1 V I O =20µ; V CC = 6.0 V - 0 0.1 V I O = 6.0 m; V CC = 4.5 V - 0.15 0.26 V I O = 7.8 m; V CC = 6 V - 0.16 0.26 V I LI input leakage current V I =V CC or GND; V CC = 6 V - - ±0.1 µ I OZ OFF-state output current V I = V IH or V IL ; V O =V CC or GND - - ±0.5 µ I CC quiescent supply current V I =V CC or GND; I O = 0 ; - - 8.0 µ V CC = 6.0 V C i input capacitance - 3.5 - pf T amb = 40 C to +85 C V IH HIGH-state input voltage V CC = 2.0 V 1.5 - - V V CC = 4.5 V 3.15 - - V V CC = 6.0 V 4.2 - - V V IL LOW-state input voltage V CC = 2.0 V - - 0.5 V V CC = 4.5 V - - 1.35 V V CC = 6.0 V - - 1.8 V V OH HIGH-state output voltage V I = V IH or V IL I O = 20 µ; V CC = 2.0 V 1.9 - - V I O = 20 µ; V CC = 4.5 V 4.4 - - V I O = 20 µ; V CC = 6.0 V 5.9 - - V I O = 6.0 m; V CC = 4.5 V 3.84 - - V I O = 7.8 m; V CC = 6 V 5.34 - - V V OL LOW-state output voltage V I = V IH or V IL I O =20µ; V CC = 2.0 V - - 0.1 V I O =20µ; V CC = 4.5 V - - 0.1 V I O =20µ; V CC = 6.0 V - - 0.1 V I O = 6.0 m; V CC = 4.5 V - - 0.33 V I O = 7.8 m; V CC = 6 V - - 0.33 V I LI input leakage current V I =V CC or GND; V CC = 6 V - - ±1.0 µ I OZ OFF-state output current V I = V IH or V IL ; V O =V CC or GND - - ±5.0 µ I CC quiescent supply current V I =V CC or GND; I O = 0 ; V CC = 6.0 V - - 80 µ Product data sheet Rev. 03 22 December 2005 7 of 22
Table 7: Static characteristics 74HC244 continued t recommended operating conditions; voltages are referenced to GND (ground = 0V). Symbol Parameter Conditions Min Typ Max Unit T amb = 40 C to +125 C V IH HIGH-state input voltage V CC = 2.0 V 1.5 - - V V CC = 4.5 V 3.15 - - V V CC = 6.0 V 4.2 - - V V IL LOW-state input voltage V CC = 2.0 V - - 0.5 V V CC = 4.5 V - - 1.35 V V CC = 6.0 V - - 1.8 V V OH HIGH-state output voltage V I = V IH or V IL I O = 20 µ; V CC = 2.0 V 1.9 - - V I O = 20 µ; V CC = 4.5 V 4.4 - - V I O = 20 µ; V CC = 6.0 V 5.9 - - V I O = 6.0 m; V CC = 4.5 V 3.7 - - V I O = 7.8 m; V CC = 6 V 5.2 - - V V OL LOW-state output voltage V I = V IH or V IL I O =20µ; V CC = 2.0 V - - 0.1 V I O =20µ; V CC = 4.5 V - - 0.1 V I O =20µ; V CC = 6.0 V - - 0.1 V I O = 6.0 m; V CC = 4.5 V - - 0.4 V I O = 7.8 m; V CC = 6 V - - 0.4 V I LI input leakage current V I =V CC or GND; V CC = 6 V - - ±1.0 µ I OZ OFF-state output current V I = V IH or V IL ; V O =V CC or GND - - ±10.0 µ I CC quiescent supply current V I =V CC or GND; I O = 0 ; V CC = 6.0 V - - 160 µ Table 8: Static characteristics 74HCT244 t recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit T amb =25 C V IH HIGH-state input voltage V CC = 4.5 V to 5.5 V 2.0 1.6 - V V IL LOW-state input voltage V CC = 4.5 V to 5.5 V - 1.2 0.8 V V OH HIGH-state output voltage V I =V IH or V IL ; V CC = 4.5 V I O = 20 µ 4.4 4.5 - V I O = 6.0 m 3.98 4.32 - V V OL LOW-state output voltage V I =V IH or V IL ; V CC = 4.5 V I O =20µ - 0 0.1 V I O = 6.0 m - 0.16 0.26 V I LI input leakage current V I =V CC or GND; V CC = 5.5 V - - ±0.1 µ I OZ OFF-state output current per input pin; V I = V IH or V IL ; V O =V CC or GND; other pins at GND or V CC ; I O = 0 ; V CC = 5.5 V - - ±0.5 µ I CC quiescent supply current V I =V CC or GND; I O =0; V CC = 5.5 V - - 8.0 µ Product data sheet Rev. 03 22 December 2005 8 of 22
Table 8: Static characteristics 74HCT244 continued t recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit I CC additional quiescent supply current per input pin; V I =V CC 2.1 V; other inputs at V CC or GND; I O =0; V CC = 4.5 V to 5.5 V 70 252 µ C i input capacitance - 3.5 - pf T amb = 40 C to +85 C V IH HIGH-state input voltage V CC = 4.5 V to 5.5 V 2.0 - - V V IL LOW-state input voltage V CC = 4.5 V to 5.5 V - - 0.8 V V OH HIGH-state output voltage V I =V IH or V IL ; V CC = 4.5 V I O = 20 µ 4.4 - - V I O = 6.0 m 3.84 - - V V OL LOW-state output voltage V I =V IH or V IL ; V CC = 4.5 V I O =20µ - - 0.1 V I O = 6.0 m - - 0.33 V I LI input leakage current V I =V CC or GND; V CC = 5.5 V - - ±1.0 µ I OZ OFF-state output current per input pin; V I = V IH or V IL ; V O =V CC or GND; other pins at GND or V CC ; I O = 0 ; V CC = 5.5 V ±5.0 µ I CC quiescent supply current V I =V CC or GND; I O =0; V CC = 5.5 V I CC additional quiescent supply current per input pin; V I =V CC 2.1 V; other inputs at V CC or GND; I O =0; V CC = 4.5 V to 5.5 V - - 80 µ - - 315 µ T amb = 40 C to +125 C V IH HIGH-state input voltage V CC = 4.5 V to 5.5 V 2.0 - - V V IL LOW-state input voltage V CC = 4.5 V to 5.5 V - - 0.8 V V OH HIGH-state output voltage V I =V IH or V IL ; V CC = 4.5 V I O = 20 µ 4.4 - - V I O = 6.0 m 3.7 - - V V OL LOW-state output voltage V I =V IH or V IL ; V CC = 4.5 V I O =20µ - - 0.1 V I O = 6.0 m - - 0.4 V I LI input leakage current V I =V CC or GND; V CC = 5.5 V - - ±1.0 µ I OZ OFF-state output current per input pin; V I = V IH or V IL ; V O =V CC or GND; other pins at GND or V CC ; I O = 0 ; V CC = 5.5 V - - ±10.0 µ I CC quiescent supply current V I =V CC or GND; I O =0; V CC = 5.5 V I CC additional quiescent supply current per input pin; V I =V CC 2.1 V; other inputs at V CC or GND; I O =0; V CC = 4.5 V to 5.5 V - - 160 µ - - 343 µ Product data sheet Rev. 03 22 December 2005 9 of 22
11. Dynamic characteristics Table 9: Dynamic characteristics 74HC244 GND = 0 V; t r =t f = 6 ns; C L = 50 pf unless otherwise specified; for test circuit see Figure 8. delay nn to nyn see Figure 6 Symbol Parameter Conditions Min Typ Max Unit T amb = 25 C t PHL, propagation t PLH V CC = 2.0 V - 30 110 ns V CC = 4.5 V - 11 22 ns V CC = 5 V; C L =15pF - 9 - ns V CC = 6.0 V - 9 19 ns t PZH, t PZL t PHZ, t PLZ 3-state output enable time 3-state output disable time see Figure 7 V CC = 2.0 V - 36 150 ns V CC = 4.5 V - 13 30 ns V CC = 6.0 V - 10 26 ns see Figure 7 V CC = 2.0 V - 39 150 ns V CC = 4.5 V - 14 30 ns V CC = 6.0 V - 11 26 ns t THL, t TLH output transition time see Figure 6 V CC = 2.0 V - 14 60 ns V CC = 4.5 V - 5 12 ns V CC = 6.0 V - 4 10 ns C PD power dissipation capacitance V I = GND to V CC [1] - 35 - pf T amb = 40 C to +85 C t PHL, propagation delay t PLH V CC = 2.0 V - - 145 ns V CC = 4.5 V - - 28 ns V CC = 6.0 V - - 24 ns t PZH, t PZL t PHZ, t PLZ 3-state output enable time 3-state output disable time see Figure 7 V CC = 2.0 V - - 190 ns V CC = 4.5 V - - 38 ns V CC = 6.0 V - - 33 ns see Figure 7 V CC = 2.0 V - - 190 ns V CC = 4.5 V - - 38 ns V CC = 6.0 V - - 33 ns t THL, t TLH output transition time see Figure 6 V CC = 2.0 V - - 75 ns V CC = 4.5 V - - 15 ns V CC = 6.0 V - - 13 ns Product data sheet Rev. 03 22 December 2005 10 of 22
Table 9: Dynamic characteristics 74HC244 continued GND = 0 V; t r =t f = 6 ns; C L = 50 pf unless otherwise specified; for test circuit see Figure 8. Symbol Parameter Conditions Min Typ Max Unit nn to nyn see Figure 6 T amb = 40 C to +125 C t PHL, propagation delay t PLH V CC = 2.0 V - - 165 ns V CC = 4.5 V - - 33 ns V CC = 6.0 V - - 28 ns t PZH, t PZL t PHZ, t PLZ 3-state output enable time 3-state output disable time [1] C PD is used to determine the dynamic power dissipation (P D in µw): P D =C PD V 2 CC f i N+ (C L V 2 CC f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; V CC = supply voltage in V; N = number of inputs switching; (C L V 2 CC f o ) = sum of outputs. see Figure 7 V CC = 2.0 V - - 225 ns V CC = 4.5 V - - 45 ns V CC = 6.0 V - - 38 ns see Figure 7 V CC = 2.0 V - - 225 ns V CC = 4.5 V - - 45 ns V CC = 6.0 V - - 38 ns t THL, t TLH output transition time see Figure 6 V CC = 2.0 V - - 90 ns V CC = 4.5 V - - 18 ns V CC = 6.0 V - - 15 ns Table 10: Dynamic characteristics type 74HCT244 GND = 0 V; t r =t f = 6 ns; C L = 50 pf unless otherwise specified; for test circuit see Figure 8. delay nn to nyn see Figure 6 Symbol Parameter Conditions Min Typ Max Unit T amb = 25 C t PHL, propagation t PLH V CC = 4.5 V - 13 22 ns V CC = 5 V; C L =15pF - 11 - ns t PZH, t PZL t PHZ, t PLZ 3-state output enable time 3-state output disable time V CC = 4.5 V; see Figure 7-15 30 ns V CC = 4.5 V; see Figure 7-15 25 ns t THL, output transition time V CC = 4.5 V; see Figure 6-5 12 ns t TLH C PD power dissipation capacitance V I = GND to (V CC 1.5 V) [1] - 35 - pf Product data sheet Rev. 03 22 December 2005 11 of 22
Table 10: Dynamic characteristics type 74HCT244 continued GND = 0 V; t r =t f = 6 ns; C L = 50 pf unless otherwise specified; for test circuit see Figure 8. Symbol Parameter Conditions Min Typ Max Unit T amb = 40 C to +85 C t PHL, propagation delay nn to nyn V CC = 4.5 V; see Figure 6 - - 28 ns t PLH t PZH, t PZL t PHZ, t PLZ 3-state output enable time 3-state output disable time [1] C PD is used to determine the dynamic power dissipation (P D in µw): P D =C PD V 2 CC f i N+ (C L V 2 CC f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; V CC = supply voltage in V; N = number of inputs switching; (C L V 2 CC f o ) = sum of outputs. 12. Waveforms V CC = 4.5 V; see Figure 7 - - 38 ns V CC = 4.5 V; see Figure 7 - - 31 ns t THL, t TLH output transition time V CC = 4.5 V; see Figure 6 - - 15 ns T amb = 40 C to +125 C t PHL, propagation delay t PLH t PZH, t PZL t PHZ, t PLZ 3-state output enable time 3-state output disable time V CC = 4.5 V; see Figure 7 - - 45 ns V CC = 4.5 V; see Figure 7 - - 38 ns t THL, output transition time V CC = 4.5 V; see Figure 6 - - 18 ns t TLH V I nn input GND t PHL t PLH V OH nyn output V OL 90 % 10 % t THL t TLH 001aae013 Fig 6. Measurement points are given in Table 11. V OL and V OH are typical voltage output drop that occur with the output load. Propagation delay input (1n, 2n) to output (1Yn, 2Yn) and transition time output (nyn) Product data sheet Rev. 03 22 December 2005 12 of 22
V I noe input GND t PLZ t PZL nyn output LOW-to-OFF OFF-to-LOW V CC V OL V X t PHZ t PZH V OH nyn output HIGH-to-OFF OFF-to-HIGH GND outputs enabled V Y outputs disabled outputs enabled 001aae014 Measurement points are given in Table 11. V OL and V OH are typical voltage output drop that occur with the output load. Fig 7. 3-state enable and disable times Table 11: Measurement points Type Input Output 74HC244 0.5V CC 0.5V CC 74HCT244 1.3 V 1.3 V Product data sheet Rev. 03 22 December 2005 13 of 22
V I negative pulse 0 V 90 % 10 % t W t f t r t r t f V I positive pulse 0 V 10 % 90 % t W V CC V CC PULSE GENERTOR VI DUT VO RL S1 open RT CL 001aad983 Fig 8. Test data is given in Table 12. Definitions test circuit: R T = Termination resistance should be equal to output impedance Z o of the pulse generator C L = Load capacitance including jig and probe capacitance R L = Load resistor S1 = Test selection switch Load circuitry for switching times Table 12: Test data Type Input Load S1 position V I t r, t f C L R L t PHL, t PLH t PZH, t PHZ t PZL, t PLZ 74HC244 V CC 6 ns 15 pf, 50 pf 1 kω open GND V CC 74HCT244 3 V 6 ns 15 pf, 50 pf 1 kω open GND V CC Product data sheet Rev. 03 22 December 2005 14 of 22
13. Package outline DIP20: plastic dual in-line package; 20 leads (300 mil) SOT146-1 D M E seating plane 2 L 1 Z 20 e b b 1 11 w M c (e ) 1 M H pin 1 index E 1 10 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches max. 1 2 (1) (1) min. max. b b 1 c D E e e 1 L M E M H 4.2 0.51 3.2 0.17 0.02 0.13 1.73 1.30 0.068 0.051 0.53 0.38 0.021 0.015 0.36 0.23 0.014 0.009 26.92 26.54 1.060 1.045 6.40 6.22 0.25 0.24 2.54 7.62 0.1 0.3 3.60 3.05 0.14 0.12 8.25 7.80 0.32 0.31 10.0 8.3 0.39 0.33 w 0.254 0.01 (1) Z max. 2 0.078 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT146-1 MS-001 SC-603 99-12-27 03-02-13 Fig 9. Package outline SOT146-1 (DIP20) Product data sheet Rev. 03 22 December 2005 15 of 22
SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E X c y H E v M Z 20 11 Q 2 1 ( ) 3 pin 1 index L L p θ 1 e b p 10 w M detail X 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches max. 2.65 0.1 1 2 3 b p c D (1) E (1) e H (1) E L L p Q v w y Z 0.3 0.1 0.012 0.004 2.45 2.25 0.096 0.089 0.25 0.01 0.49 0.36 0.019 0.014 0.32 0.23 0.013 0.009 13.0 12.6 0.51 0.49 7.6 7.4 0.30 0.29 1.27 10.65 10.00 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 0.05 0.419 0.394 1.4 0.055 1.1 0.4 0.043 0.016 1.1 1.0 0.043 0.039 0.25 0.25 0.1 0.01 0.01 0.004 θ 0.9 0.4 o 8 o 0.035 0 0.016 OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT163-1 075E04 MS-013 99-12-27 03-02-19 Fig 10. Package outline SOT163-1 (SO20) Product data sheet Rev. 03 22 December 2005 16 of 22
SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm SOT339-1 D E X c y H E v M Z 20 11 Q pin 1 index 2 1 ( ) 3 θ L L p 1 10 detail X e b p w M 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT 1 2 3 b p c D (1) E (1) e H E L L p Q v w y Z (1) max. mm 2 0.21 0.05 1.80 1.65 0.25 0.38 0.25 0.20 0.09 7.4 7.0 5.4 5.2 0.65 7.9 7.6 1.03 0.9 1.25 0.2 0.13 0.1 0.63 0.7 0.9 0.5 θ o 8 o 0 Note 1. Plastic or metal protrusions of 0.2 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT SOT339-1 MO-150 EUROPEN PROJECTION ISSUE DTE 99-12-27 03-02-19 Fig 11. Package outline SOT339-1 (SSOP20) Product data sheet Rev. 03 22 December 2005 17 of 22
TSSOP20: plastic thin shrink small outline package; 20 leads; body width 4.4 mm SOT360-1 D E X c y H E v M Z 20 11 Q pin 1 index 2 1 ( ) 3 θ 1 10 w M e b p L detail X L p 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT 1 2 3 b p c D (1) E (2) e H (1) E L L p Q v w y Z max. mm 1.1 0.15 0.05 0.95 0.80 0.25 0.30 0.19 0.2 0.1 6.6 6.4 4.5 4.3 0.65 6.6 6.2 1 0.75 0.50 0.4 0.3 0.2 0.13 0.1 0.5 0.2 θ o 8 o 0 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT SOT360-1 MO-153 EUROPEN PROJECTION ISSUE DTE 99-12-27 03-02-19 Fig 12. Package outline SOT360-1 (TSSOP20) Product data sheet Rev. 03 22 December 2005 18 of 22
DHVQFN20: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 20 terminals; body 2.5 x 4.5 x 0.85 mm SOT764-1 D B E 1 c terminal 1 index area detail X terminal 1 index area e 1 e b 2 9 v M w M C C B y 1 C C y L 1 10 E h e 20 11 19 12 D h X 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT (1) max. 1 b c D (1) D h E (1) E h e e 1 L v w y y 1 mm 1 0.05 0.00 0.30 0.18 0.2 4.6 4.4 3.15 2.85 2.6 2.4 1.15 0.85 0.5 3.5 0.5 0.3 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT SOT764-1 - - - MO-241 - - - EUROPEN PROJECTION ISSUE DTE 02-10-17 03-01-27 Fig 13. Package outline SOT764-1 (DHVQFN20) Product data sheet Rev. 03 22 December 2005 19 of 22
14. bbreviations Table 13: cronym CMOS DUT ESD HBM LSTTL MM bbreviations Description Complementary Metal Oxide Semiconductor Device Under Test ElectroStatic Discharge Human Body Model Low-power Schottky Transistor-Transistor Logic Machine Model 15. Revision history Table 14: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes 20051222 Product data sheet - - 74HC_HCT244_CNV _2 Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. Section 4 Ordering information, Section 6 Pinning information and Section 13 Package outline : dded DHVQFN package information Section 10 Static characteristics : dded from the family specification 74HC_HCT244_CNV_2 19901201 Product specification - - - Product data sheet Rev. 03 22 December 2005 20 of 22
16. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 17. Definitions Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the bsolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. pplication information pplications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 18. Disclaimers customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 19. Trademarks Notice ll referenced brands, product names, service names and trademarks are the property of their respective owners. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 20. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Product data sheet Rev. 03 22 December 2005 21 of 22
21. Contents 1 General description...................... 1 2 Features............................... 1 3 Quick reference data..................... 1 4 Ordering information..................... 2 5 Functional diagram...................... 3 6 Pinning information...................... 4 6.1 Pinning............................... 4 6.2 Pin description......................... 4 7 Functional description................... 5 7.1 Function table.......................... 5 8 Limiting values.......................... 5 9 Recommended operating conditions........ 6 10 Static characteristics..................... 6 11 Dynamic characteristics................. 10 12 Waveforms............................ 12 13 Package outline........................ 15 14 bbreviations.......................... 20 15 Revision history........................ 20 16 Data sheet status....................... 21 17 Definitions............................ 21 18 Disclaimers............................ 21 19 Trademarks............................ 21 20 Contact information.................... 21 Koninklijke Philips Electronics N.V. 2005 ll rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 December 2005 Document number: Published in The Netherlands