SiC Power Module BSM3D2P2E Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 7 9 8 3,4 Features ) Low surge, low switching loss. 6 NTC 2 2) Highspeed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiCDMOSFET and SiCSBD from ROHM. Dimensions & Pin layout (Unit : mm) 2 ROHM Co., Ltd. All rights reserved. /9 28.2 Rev.C
BSM3D2P2E Absolute maximum ratings (T j = 2 C) Parameter Symbol Conditions Limit Unit Drainsource voltage V DSS GS short 2 Gatesource voltage( ) 22 V GSS DS short Gatesource voltage( ) 6 V G S Voltage (t surge <3nsec) V GSS_surge DS short to 26 Drain current * I D DC (T c =6 C) 3 I DRM Pulse (T c =6 C) ms * 2 6 Source current * I S DC (T c =6 C ) 3 I SRM Pulse (Tc=6 C) ms * 2 6 A Total power disspation * 3 Ptot T c =2 C 87 W Max Junction Temperature Operating junction temperature Storage temperature T jmax T jop T stg 7 4 to 4 to2 C Isolation voltage Visol Terminals to baseplate, f=6hz AC min. 2 Vrms Mounting torque Main Terminals : M6 screw Mounting to heat shink : M screw (*) Case temperature (T c ) is defined on the surface of base plate just under the chips. N m (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) T j is less than 7 C 4. 3. Example of acceptable V GS waveform 26V t surge 22V V t surge 6V V 2 ROHM Co., Ltd. All rights reserved. 2/9 28.2 Rev.C
BSM3D2P2E Electrical characteristics (T j =2 C) Parameter Static drainsource onstate voltage Symbol Conditions Min. Typ. Max. Unit T j =2 C 2.2 2.9 V DS(on) I D =3A, V GS =8V V T j =2 C 3. T j = C 3.4 4. Drain cutoff current I DSS V DS =2V, V GS =V 3.2 ma T j =2 C.6 2. V GS =V, I S =3A T j =2 C 2.2 Sourcedrain voltage V SD T j = C 2.4 3.2 T j =2 C.4 V V GS =8V, I S =3A T j =2 C.6 T j = C.7 Gatesource threshold voltage V GS(th) V DS =V, I D =68mA.6 2.7 4. V V GS =22V, V DS =V. Gatesource leakage current I GSS V GS = 6V, V DS =V. A t d(on), V GS(off) =V 8 t r V DS =6V 7 Switching characteristics t rr I D =3A ns t d(off) R G =.2 2 t f inductive load 6 Input capacitance Ciss V DS =V, V GS =V,kHz 32 nf Gate Registance R Gint T j =2 C.6 NTC Rated Resistance R2. k NTC B Value B/2 337 K Stray Inductance Ls 3 nh Creepage Distance Clearance Distance Terminal to heat sink Terminal to heat sink 4. 2. mm mm Terminal to terminal Terminal to terminal. 9. mm mm Junctiontocase thermal resistance Casetoheat sink Thermal resistance DMOS (/2 module) * 4.8 R th (jc) SBD (/2 module) * 4. Case to heat sink, per module, R th (cf) Thermal grease applied *.3 (*4) Measurement of Tc is to be done at the point just under the chip. (*) Typical value is measured by using thermally conductive grease of λ=.9w/(m K). (*6) If the Product is used beyond absolute maximum ratings defined in the Specifications, as its internal structure may be dameged, please replace such Product with a new one. VDS <Wavelength for Switching Test> Eon=Id Vds 9% trr Eoff=Id Vds 9% K/W Vsurge ID % 2% % % 2% 2% 2% VGS % 9% td(on) tr td(off) tf 2 ROHM Co., Ltd. All rights reserved. 3/9 28.2 Rev.C
BSM3D2P2E Fig. Typical Output Characteristics [ ] Fig.2 DrainSource Voltage vs. Drain Current 6 4 3 2 V GS =8V V GS =2V V GS =6V V GS =4V V GS =2V V GS =V DrainSource Voltage : V DS 8 7 6 4 3 2 V GS =8V T j =ºC T j =2ºC 2 4 6 8 2 4 6 DrainSource Voltage : V DS DrainSource Voltage : V DS Fig.3 DrainSource Voltage vs. GateSource Voltage [ ] 8 7 6 4 3 2 I D =4A I D =3A I D =2A I D =A 2 4 6 8 2 22 24 26 Fig.4 Static Drain Source OnState Resistance vs. Junction Temperature Static Drain Source OnState Resistance : R DS(on) [m ] 3 2 2 V GS =8V V GS =2V I D =3A V GS =2V V GS =4V V GS =6V 2 2 GateSource Voltage : V GS Junction Temperature : T j [ºC] 2 ROHM Co., Ltd. All rights reserved. 4/9 28.2 Rev.C
BSM3D2P2E Fig. Forward characteristic of Diode Fig.6 Forward characteristic of Diode T j =2ºC T j=ºc 6 T j =ºC Source Current : Is T j =2ºC V GS =V V GS =8V T j =ºC 2 3 4 Source Current : Is 4 3 2 T j =2ºC T j =ºC T j =2ºC V GS =V V GS =8V 2 3 4 SourceDrain Voltage : V SD SourceDrain Voltage : V SD Fig.7 Drain Current vs. GateSource Voltage Fig.8 Drain Current vs. GateSource Voltage 6 V DS =2V V DS =2V T j =ºC T j =2ºC 4 3 2 T j =2ºC T j =ºC GateSource Voltage : V GS GateSource Voltage : V GS 2 ROHM Co., Ltd. All rights reserved. /9 28.2 Rev.C
BSM3D2P2E Fig.9 Switching Characteristics [ ] Fig. Switching Characteristics [ T j =ºC ] t d(off) t d(off) Switching Time : t [ns] V DS =6V V GS(off) = V 2 4 6 t r t d(on) R G =.2 t f Switching Time : t [ns] t f V DS =6V V GS(off) = V 2 4 6 t r t d(on) R G =.2 Switching Loss [mj] Fig. Switching Loss vs. Drain Current [ ] 2 V DS =6V V GS(off) =V R G =.2 E on E off Switching Loss [mj] Fig.2 Switching Loss vs. Drain Current [ T j =ºC ] 2 2 V DS =6V V GS(off) =V R G =.2 E off E on E rr 2 4 6 E rr 2 4 6 2 ROHM Co., Ltd. All rights reserved. 6/9 28.2 Rev.C
BSM3D2P2E Fig.3 Recovery Characteristics vs. Drain Current [ ] Fig.4 Recovery Characteristics vs. Drain Current [ T j =ºC ] Recovery Time : t rr [ns]. V DS =6V. V GS(off) =V R G =.2. 2 4 6 I rr t rr Recovery Current : I rr Recovery Time : t rr [ns] V DS =6V V GS(off) =V R G =.2 2 4 6 I rr t rr Recovery Current : I rr Recovery Current : I rr Fig. Switching Characteristics vs. Gate Resistance [ ] V DS =6V I D =3A V GS(off) =V t f t d(off) t d(on) tr Switching Time : t [ns] Fig.6 Switching Characteristics vs. Gate Resistance [ T j =ºC ] V DS =6V I D =3A V GS(off) =V t d(off) t f t r t d(on).. Gate Resistance : R G [ ] Gate Resistance : R G [ ] 2 ROHM Co., Ltd. All rights reserved. 7/9 28.2 Rev.C
BSM3D2P2E Switching Loss [mj] Fig.7 Switching Loss vs. Gate Resistance [ ] 6 4 3 2 V DS =6V I D =3A V GS(off) =V E on E off Switching Loss [mj] Fig.8 Switching Loss vs. Gate Resistance [ T j =ºC ] 6 4 3 2 V DS =6V I D =3A V GS(off) =V E off E on E rr. E rr. Gate Resistance : R G [ ] Gate Resistance : R G [ ] Fig.9 Typical Capacitance vs. DrainSource Voltage.E7 Fig.2 Gate Charge Characteristics [ ] 2 Capasitance : C [F].E8.E9 Ciss Coss V GS =V Crss.E.. GateSource Voltage : V GS 2 I D =3A 2 DrainSource Voltage : V DS Total Gate charge : Qg [nc] 2 ROHM Co., Ltd. All rights reserved. 8/9 28.2 Rev.C
BSM3D2P2E Normalized Transient Thermal Impedance : Zth Fig.2 Normalized Transient Thermal Impedance. Single Pulse T C =2ºC Per unit base DMOS part :.8K/W SBD part :.K/W.... Time [s] 2 ROHM Co., Ltd. All rights reserved. 9/9 28.2 Rev.C
Notice Notes ) 2) 3) 4) ) 6) 7) 8) 9) ) ) 2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications. Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and failsafe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from noncompliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is errorfree, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting noncompliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 3) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/