DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 199 File under Discrete Semiconductors, SC14 1995 Sep 1
FEATURES High output voltage capability High gain bandwidth product Good thermal stability Gold metallization ensures excellent reliability. PINNING PIN DESCRIPTION 1 emitter base 3 emitter 4 collector page 4 DESCRIPTION PNP planar epitaxial transistor mounted in a plastic SOT3 envelope. It is intended for wideband amplifier applications. NPN complement is the BFG97. 1 3 Top view MSB - 1 Fig.1 SOT3. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CEO collector-emitter voltage open base 15 V I C DC collector current 1 ma P tot total power dissipation up to T s = 135 C ; note 1 1 W h FE DC current gain I C = 7 ma; V CE = 1 V; 5 T amb =5 C f T transition frequency I C = 7 ma; V CE = 1 V; f = 5 MHz; T amb = 5 C 5. GHz G UM maximum unilateral power gain I C = 7 ma; V CE = 1 V; f = 8 MHz; T amb =5 C V o output voltage I C = 1 ma; V CE = 1 V; R L =75Ω; T amb = 5 C 1 db mv LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base 15 V V EBO emitter-base voltage open collector 3 V I C DC collector current 1 ma P tot total power dissipation up to T s = 135 C; note 1 1 W T stg storage temperature 65 15 C T j junction temperature 175 C Note 1. T s is the temperature at the soldering point of the collector tab. 1995 Sep 1
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to up to T s = 135 C; note 1 4 K/W soldering point Note 1. T s is the temperature at the soldering point of the collector tab. CHARACTERISTICS T j =5 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)CBO collector-base breakdown voltage open emitter; I C = 1 ma V V (BR)CEO collector-emitter breakdown voltage open base; I C = 1 ma 18 V V (BR)EBO emitter-base breakdown voltage open collector; I E =.1 ma 3 V I CBO collector cut-off current I E = ; V CB = 1 V 1 µa h FE DC current gain I C = 7 ma; V CE = 1 V; 5 T amb =5 C C cb collector-base capacitance I C = ; V CB = 1 V; f = 1 MHz; 1.8 pf C eb emitter-base capacitance I C = ; V EB = 1 V; f = 1 MHz 5 pf C re feedback capacitance I C = ; V CE = 1 V; f = 1 MHz; 1.6 pf T amb =5 C f T transition frequency I C = 7 ma; V CE = 1 V; 5 GHz f = 5 MHz; T amb =5 C G UM maximum unilateral power gain; note 1 I C = 7 ma; V CE = 1 V; 16 db f = 5 MHz; T amb =5 C I C = 7 ma; V CE = 1 V; 1 db f = 8 MHz; T amb =5 C V o output voltage note mv V o output voltage note 3 55 mv Notes 1. G UM is the maximum unilateral power gain, assuming S 1 is zero and G UM = 1. d im = db; I C = 7 ma; V CE = 1 V; R L =75Ω; T amb =5 C; V p =V o at d im = db; f p = 85.5 MHz; V q =V o 6 db; f q = 858.5 MHz; V r =V o 6 db;f r = 8.5 MHz; measured at f (p+q r) = 848.5 MHz. 3. d im = db (DIN 454B); I C = 7 ma; V CE = 1 V; R L =75Ω; T amb =5 C; V p =V o = at d im = db; f p = 445.5 MHz; V q =V o 6 db; f q = 453.5 MHz; V r =V o 6 db; f r = 455.5 MHz; measured at f (p+q r) = 443.5 MHz. s 1 log------------------------------------------------------------ ( 1 s 11 ) ( 1 s ) db. 1995 Sep 1 3
1. Ptot (W) 1. MBB344 8 h FE MBB345.8.6 4.4. 5 1 15 T ( o s C) 1 I (ma) C V CE = 1 V; T amb =5 C. Fig. Power derating curve. Fig.3 DC current gain as a function of collector current. 6 Cre (pf) 5 MBB346 8 f T (GHz) 6 MBB347 4 4 3 1 1 V CE (V) 3 5 1 I C (ma) f = 1 MHz; T amb =5 C V CE = 1 V; T amb =5 C. Fig.4 Feedback capacitance as a function of collector-emitter voltage. Fig.5 Transition frequency as a function of collector current. 1995 Sep 1 4
4 d im 45 MBB348 5 d im MBB349 55 5 55 65 4 8 1 I C (ma) 65 4 8 1 1 I C (ma) V CE = 1 V; V o = 65 mv; T amb =5 C; f (p+q r) = 443.5 MHz. V CE = 1 V; V o = 55 mv; T amb =5 C; f (p+q r) = 848.5 MHz. Fig.6 Intermodulation distortion as a function of collector current. Fig.7 Intermodulation distortion as a function of collector current. 1 d MBB35 1 d MBB351 3 3 4 4 5 5 1 3 5 7 9 11 I C (ma) 1 3 5 7 9 11 I C (ma) V CE = 1 V; V o = 5 dbmv; T amb =5 C; f (p+q) = 45 MHz. V CE = 1 V; V o = 5 dbmv; T amb =5 C; f (p+q) = 81 MHz. Fig.8 Second order intermodulation distortion as a function of collector current. Fig.9 Second order intermodulation distortion as a function of collector current. 1995 Sep 1 5
PACKAGE OUTLINE handbook, full pagewidth.95.85.3.4 S seating plane.1 S 6.7 6.3 3.1.9 B. M A 4 A.1.1 3.7 3.3 7.3 6.7 16 o max o 16 1 3 1.8 max 1 o max.3.8. 4.6.1 M B (4x) MSA35-1 Dimensions in mm. Fig.1 SOT3. 1995 Sep 1 6
DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 1 7