P D = 5 W / 6 W Transient Voltage Suppressor. Description. Package SZ-10. Features. Selection Guide. Applications. Typical Application

Similar documents
P D = 5 W / 6 W Transient Voltage Suppressor. Package SZ-10. Description. Features. Selection Guide. Applications. Typical Application

P D = 5 W Transient Voltage Suppressor. Package. Description. Features. Applications. Typical Application. (1) (2) (1) Cathode (2) Anode

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE. DC I D 100 ma Pulse I DP 200

Derating of the MOSFET Safe Operating Area Outline:

TC4028BP, TC4028BF TC4028BP/BF. TC4028B BCD-to-Decimal Decoder. Pin Assignment TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74HC155AP, TC74HC155AF

TC7WB66CFK,TC7WB66CL8X TC7WB67CFK,TC7WB67CL8X

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7002BFU. DC I D 200 ma Pulse I DP 800

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU

S-5743 A Series 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications. Package.

TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE

S-57P1 S Series FOR AUTOMOTIVE 150 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications.

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU IN A GND

250 V to 600 V, 1.5 A to 2.5 A High Voltage 3-phase Motor Driver ICs. Description. Package. Features. Selection Guide. Typical Application

TC74VCX14FT, TC74VCX14FK

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE. DC I D 100 ma Pulse I DP 200

S-57M1 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH. Features. Applications. Package. ABLIC Inc., Rev.1.

IS2805 DESCRIPTION FEATURES

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU. Characteristic Symbol Test Condition Min Typ. Max Unit

TPCP8404 TPCP8404. Portable Equipment Applications Motor Drive Applications. Absolute Maximum Ratings (Ta = 25 C) Circuit Configuration

ABLIC Inc., Rev.2.2_02

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026

Maintenance/ Discontinued

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiii) 2SK2613

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3667

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK15J60U

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3497

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) 2SK4108. JEDEC Repetitive avalanche energy (Note 3) E AR 15 mj

TPCA8107-H 4± ± M A .0±.0± 0.15± ± ± ± ± ± 4.25±0.2 5±0. 3. Maximum Ratings (Ta 25 C)

Detection of S pole Detection of N pole Active "L" Active "H" Nch open-drain output Nch driver built-in pull-up resistor. f C = 250 khz typ.

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103

Small Signal Zener Diodes, Dual

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View

BAT54XV2 Schottky Barrier Diode

Small Signal Zener Diodes, Dual

Schottky Barrier Diode RBR10NS40AFH

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Rectifying Diode RR2LAM6STF

Rectifier Diode RR2L4S

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC8037-H

Linear Regulator Application Information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8028

Zener Diodes FEATURES APPLICATIONS. MINIMUM ORDER QUANTITY BZX85-series BZX85-series-TR 5000 (52 mm tape on 13" reel) /box

Small Signal Zener Diodes

TC4013BP,TC4013BF,TC4013BFN

FG Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits. Package. Overview. Features. Marking Symbol: V7

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor

Maintenance/ Discontinued

STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

AN78Lxx/AN78LxxM Series

TA7262P,TA7262P(LB),TA7262F

AN78xx/AN78xxF Series

TA78033AS, TA7804AS, TA7805AS, TA7807AS, TA7808AS, TA7809AS

Thermal Calculation for Linear Regulator

BUK A. N-channel TrenchMOS standard level FET

TC7SZ126F TC7SZ126F. 1. Functional Description. 2. Features. 3. Packaging Rev.3.0. Start of commercial production

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

IS181 DESCRIPTION FEATURES

STTH61R04TV. Ultrafast recovery diode. Main product characteristics. Features and benefits. Order codes. Description A1 K2 ISOTOP ISOTOP STTH61R04TV1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8017-H

65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T

Anti-surge Chip Resistors

TPC8203 TPC8203. Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs. Maximum Ratings (Ta = 25 C) Circuit Configuration

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK12A50D

Hyperfast Rectifier, 1 A FRED Pt

Maintenance/ Discontinued

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC8114. DC (Note 1) I D 18 A Pulse (Note 1) I DP 72

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type. (P Channel U MOS IV/N Channel U-MOS III) TPC8405. Rating P Channel N Channel

New Designs. Not Recommended for. Schottky Barrier Diode RB238T100. Data Sheet. Application Dimensions (Unit : mm) Structure Switching power supply

Features. T A =25 o C unless otherwise noted

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes

BUK B. N-channel TrenchMOS standard level FET

DO-15 DO-201AD STTH3R04Q STTH3R04

Small Signal Fast Switching Diode

Small Signal Zener Diodes

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

PMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1.

TC74LCX08F,TC74LCX08FN,TC74LCX08FT,TC74LCX08FK

TPCS8209 查询 TPCS8209 供应商 TPCS8209. Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools. Maximum Ratings (Ta = 25 C)

Zener Diodes FEATURES APPLICATIONS

FFSH2065BDN-F085. Silicon Carbide Schottky Diode, 650 V, 20 A

GT10Q301 GT10Q301. High Power Switching Applications Motor Control Applications. Maximum Ratings (Ta = 25 C) Equivalent Circuit. Marking

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102

Small Signal Zener Diodes

PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1.

BAV BAV Total power dissipation T S 35 C. t = 1 s. t = 1 µs. P tot 250 mw

Small Signal Fast Switching Diode

Transcription:

P D = 5 W / 6 W Transient Voltage Suppressor SZ-0N Series Data Sheet Description The SZ-0N series are power Zener diodes designed for the protection of automotive electronic units, especially from the surge generated during load dump conditions and voltage transients induced by inductive loads. The package of the IC has high dissipation and high surge capability. Features AEC-Q0 Qualified Meets the Surge Protection Requirements in ISO7637-2 Standard (Pulse 5a) T J = 75 C Capability Suitable for High Reliability and Automotive Requirement High Surge Capability Flammability UL94V-0 (Equivalent) RoHS Compliant Applications Protection of sensitive electronic equipment in passenger cars, trucks, vans, and buses: Engine Control Units Electric Control Units Braking System Power Steering System Airbags Audio/Infotainment Equipment Package SZ-0 Selection Guide Part Number () (2) () Cathode (2) Anode Min. V Z Max. I RSM (2) () Not to scale SZ-0N27 70 A 5 W 24 V 30 V SZ-0NN27 90 A 6 W SZ-0NN40 36 V 44 V 70 A 6 W P D Typical Application Key Battery Load GND Surge Absorber SZ-0N Series SZ-0N-DSE Rev..5 SANKEN ELCTRIC CO., LTD.

SZ-0N Series Contents Description ------------------------------------------------------------------------------------------------------ Contents --------------------------------------------------------------------------------------------------------- 2 Absolute Maximum Ratings --------------------------------------------------------------------------------- 3 Electrical Characteristics ------------------------------------------------------------------------------------ 4 SZ-0N27 Rating and Characteristic Curves ------------------------------------------------------------ 5 SZ-0NN27 Rating and Characteristic Curves ---------------------------------------------------------- 7 SZ-0NN40 Rating and Characteristic Curves ---------------------------------------------------------- 9 Physical Dimensions ----------------------------------------------------------------------------------------- Marking Diagram -------------------------------------------------------------------------------------------- 2 Important Notes ---------------------------------------------------------------------------------------------- 3 SZ-0N-DSE Rev..5 SANKEN ELCTRIC CO., LTD. 2

.6 mm SZ-0N Series Absolute Maximum Ratings Unless otherwise specified, T A = 25 C. Parameter Symbol Conditions Rating Unit Remarks Power Dissipation () P D Lead temperature (2) 6 W SZ-0NN27 SZ-0NN40 5 SZ-0N27 SZ-0N27 22 DC Blocking Voltage V DC V SZ-0NN27 32 SZ-0NN40 SZ-0N27 (3) 70 Peak Surge Reverse Current I RSM A SZ-0NN40 90 SZ-0NN27 Junction Temperature T J 55 to 75 C Storage Temperature T STG 55 to 75 C T L Device Cu land 3 mm 50 mm 5 mm mm mm Substrate 50 mm Figure. Lead Temperature Measurement Conditions P RSM 0.5 P RSM P RSM = V Z I RP Where: V Z is Breakdown Voltage I RP is Peak Current of Surge 0 t W t Figure 2. Definition of Peak Surge Reverse Current () See Figure 3. (2) See Figure. (3) See Figure 2. SZ-0N-DSE Rev..5 SANKEN ELCTRIC CO., LTD. 3

SZ-0N Series Electrical Characteristics Unless otherwise specified, T A = 25 C. Parameter Symbol Conditions Min. Typ. Max. Unit Remarks Forward Voltage Drop V F I F = 6 A.00 SZ-0N27 0.98 V SZ-0NN40 0.95 SZ-0NN27 Reverse Leakage Current I R V R = V DC 0 µa Breakdown Voltage V Z I Z = 0 ma Breakdown Voltage Temperature Coefficient Breakdown Region Equivalent Resistance Thermal Resistance r Z R Z R th(j-l) I Z = 0 ma I Z = A to 0 A (4) 24 30 SZ-0N27 SZ-0NN27 V 36 44 SZ-0NN40 22 SZ-0N27 mv/ C SZ-0NN27 36 SZ-0NN40 0.08 SZ-0N27 Ω SZ-0NN27 0. SZ-0NN40 2.0 C/W (4) R th(j-c) is thermal resistance between junction and lead. Lead temperature is measured as shown in Figure. SZ-0N-DSE Rev..5 SANKEN ELCTRIC CO., LTD. 4

Transient Thermal Resistance ( C/W) Power Dissipation, P D (W) Peak Surge Reverse Power Capability, P RSM (W) SZ-0N Series SZ-0N27 Rating and Characteristic Curves 7 E+05 6 P D curve for lead temperature, T L 5 E+04 4 3 2 E+03 P D curve for ambient air, T A 0 0 25 50 75 00 25 50 75 200 E+02 0 00 Temperature ( C) Pulse Width, t W (ms) Figure 3. Power Dissipation Curves (5) Figure 4. Peak Surge Reverse Power Capability (6) 00 Between junction and ambient air 0 0. Between junction and lead 0.0 0.0 0. 0 00 000 Time (s) Figure 5. Typical Transient Thermal Resistance (7) (5) See Figure for the measurement conditions of the lead temperature. (6) See Figure 2. (7) See Figure for the measurement conditions of the lead temperature. SZ-0N-DSE Rev..5 SANKEN ELCTRIC CO., LTD. 5

Breakdown Current, I Z (A) Forward Current, I F (A) Reverse Current, I R (A) SZ-0N Series 00 T A = 75 C E-03 0 T A = 25 C E-04 T A = 75 C T A = 00 C T A = 50 C E-05 E-06 T A = 50 C 0. E-07 T A = 00 C 0.0 E-08 0.00 0 0.5.5 Forward Voltage, V F (V) E-09 T A = 25 C 0 5 0 5 20 25 Reverse Voltage, V R (V) Figure 6. I F vs. V F Typical Characteristics Figure 7. I R vs. V R Typical Characteristics 00 0 0. 0.0 t = 0.6 ms 0.00 24 26 28 30 32 34 Breakdown Voltage, V Z (V) Figure 8. I Z vs. V Z Typical Characteristics SZ-0N-DSE Rev..5 SANKEN ELCTRIC CO., LTD. 6

Transient Thermal Resistance ( C/W) Power Dissipation, P D (W) Peak Surge Reverse Power Capability, P RSM (W) SZ-0N Series SZ-0NN27 Rating and Characteristic Curves 7 E+05 6 5 P D curve for lead temperature, T L E+04 4 3 2 E+03 P D curve for ambient air, T A 0 0 25 50 75 00 25 50 75 200 Temperature ( C) E+02 0 00 Pulse Width, t W (ms) Figure 9. Power Dissipation Curves (8) Figure 0. Peak Surge Reverse Power Capability (9) 00 Between junction and ambient air 0 0. Between junction and lead 0.0 0.0 0. 0 00 000 Time (s) Figure. Typical Transient Thermal Resistance (0) (8) See Figure for the measurement conditions of the lead temperature. (9) See Figure 2. (0) See Figure for the measurement conditions of the lead temperature. SZ-0N-DSE Rev..5 SANKEN ELCTRIC CO., LTD. 7

Breakdown Current, I Z (A) Forward Current, I F (A) Reverse Current, I R (A) SZ-0N Series 00 T A = 75 C E-03 0 T A = 25 C E-04 T A = 75 C T A = 00 C T A = 50 C E-05 E-06 T A = 50 C 0. E-07 T A = 00 C 0.0 E-08 0.00 0 0.5.5 Forward Voltage, V F (V) E-09 T A = 25 C 0 5 0 5 20 25 Reverse Voltage, V R (V) Figure 2. V F vs. I F Typical Characteristics Figure 3. V R vs. I R Typical Characteristics 00 0 0. 0.0 t = 0.6 ms 0.00 24 26 28 30 32 34 Breakdown Voltage, V Z (V) Figure 4. I Z vs. V Z Typical Characteristics SZ-0N-DSE Rev..5 SANKEN ELCTRIC CO., LTD. 8

Transient Thermal Resistance ( C/W) Power Dissipation, P D (W) Peak Surge Reverse Power Capability, P RSM (W) SZ-0N Series SZ-0NN40 Rating and Characteristic Curves 7 E+05 6 5 P D curve for lead temperature, T L E+04 4 3 2 E+03 P D curve for ambient air, T A 0 0 25 50 75 00 25 50 75 200 Temperature ( C) E+02 0 00 Pulse Width, t W (ms) Figure 5. Power Dissipation Curves () Figure 6. Peak Surge Reverse Power Capability (2) 00 Between junction and ambient air 0 0. Between junction and lead 0.0 0.0 0. 0 00 000 Time (s) Figure 7. Typical Transient Thermal Resistance (3) () See Figure for the measurement conditions of the lead temperature. (2) See Figure 2. (3) See Figure for the measurement conditions of the lead temperature. SZ-0N-DSE Rev..5 SANKEN ELCTRIC CO., LTD. 9

Breakdown Current, I Z (A) Forward Current, I F (A) Reverse Current, I R (A) SZ-0N Series 00 T A = 75 C E-03 0 T A = 25 C E-04 T A = 75 C T A = 00 C T A = 50 C E-05 E-06 T A = 50 C 0. E-07 T A = 00 C 0.0 E-08 0.00 0 0.5.5 Forward Voltage, V F (V) E-09 T A = 25 C 0 0 20 30 40 Reverse Voltage, V R (V) Figure 8. V F vs. I F Typical Characteristics Figure 9. V R vs. I R Typical Characteristics 00 0 0. 0.0 t = 0.6 ms 0.00 36 38 40 42 44 46 Breakdown Voltage, V Z (V) Figure 20. I Z vs. V Z Typical Characteristics SZ-0N-DSE Rev..5 SANKEN ELCTRIC CO., LTD. 0

SZ-0N Series Physical Dimensions SZ-0 Package NOTES: - Dimensions in millimeters - Bare lead frame: Pb-free (RoHS compliant) - When soldering the products, be sure to minimize the working time, within the following limits: Reflow (MSL 3) Preheat: 80 C / 90 ± 30 s Solder heating: 250 C / 0 ± s, 2 times (260 C peak) Soldering iron: 380 ± 0 C / 3.5 ± 0.5 s, time SZ-0 Land Pattern Example A B C D F Symbol Dimensions (mm) Min. Max. A 0.8.2 B 0.8.2 C 2.4 2.6 D 3. 3.5 E 6.5 7. F 5.3 5.7 E SZ-0N-DSE Rev..5 SANKEN ELCTRIC CO., LTD.

SZ-0N Series Marking Diagram YMDD Specific Device Code (see Table ) Lot Number: Y is the last digit of the year of manufacture (0 to 9) M is the month of the year ( to 9, O, N, or D) DD is the day of the month (0 to 3) Table. Specific Device Code Specific Device Code BN27 DN27 DN40 Part Number SZ-0N27 SZ-0NN27 SZ-0NN40 SZ-0N-DSE Rev..5 SANKEN ELCTRIC CO., LTD. 2

SZ-0N Series Important Notes All data, illustrations, graphs, tables and any other information included in this document (the Information ) as to Sanken s products listed herein (the Sanken Products ) are current as of the date this document is issued. The Information is subject to any change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales representative that the contents set forth in this document reflect the latest revisions before use. The Sanken Products are intended for use as components of electronic equipment or apparatus (transportation equipment and its control systems, home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products, please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken. If considering use of the Sanken Products for any applications that require higher reliability (traffic signal control systems or equipment, disaster/crime alarm systems, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan (collectively, the Specific Applications ). Sanken assumes no liability or responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific Applications or in manner not in compliance with the instructions set forth herein. In the event of using the Sanken Products by either (i) combining other products or materials or both therewith or (ii) physically, chemically or otherwise processing or treating or both the same, you must duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the occurrence of any failure or defect or both in semiconductor products at a certain rate. You must take, at your own responsibility, preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which the Sanken Products are used, upon due consideration of a failure occurrence rate and derating, etc., in order not to cause any human injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products. Please refer to the relevant specification documents and Sanken s official website in relation to derating. No anti-radioactive ray design has been adopted for the Sanken Products. The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of use of the Sanken Products. Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you, users or any third party, resulting from the Information. No information in this document can be transcribed or copied or both without Sanken s prior written consent. Regarding the Information, no license, express, implied or otherwise, is granted hereby under any intellectual property rights and any other rights of Sanken. Unless otherwise agreed in writing between Sanken and you, Sanken makes no warranty of any kind, whether express or implied, including, without limitation, any warranty (i) as to the quality or performance of the Sanken Products (such as implied warranty of merchantability, and implied warranty of fitness for a particular purpose or special environment), (ii) that any Sanken Product is delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course of dealing or usage of trade, and (iv) as to the Information (including its accuracy, usefulness, and reliability). In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and regulations that regulate the inclusion or use or both of any particular controlled substances, including, but not limited to, the EU RoHS Directive, so as to be in strict compliance with such applicable laws and regulations. You must not use the Sanken Products or the Information for the purpose of any military applications or use, including but not limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Information, or providing them for non-residents, you must comply with all applicable export control laws and regulations in each country including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan, and follow the procedures required by such applicable laws and regulations. Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including the falling thereof, out of Sanken s distribution network. Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting from any possible errors or omissions in connection with the Information. Please refer to our official website in relation to general instructions and directions for using the Sanken Products, and refer to the relevant specification documents in relation to particular precautions when using the Sanken Products. All rights and title in and to any specific trademark or tradename belong to Sanken and such original right holder(s). DSGN-AEZ-6003 SZ-0N-DSE Rev..5 SANKEN ELCTRIC CO., LTD. 3