The Plasma Simulation System 2018 Brochure www.quantemol.com
Benefits of Q-VT An experimentally validated simulation system focused on modelling plasma tools User-friendly interface Sets of validated cross-sections are provided with the licence What does Q-VT do? Quantemol-Virtual Tool is an expert software system for the simulation of industrial plasma processing tools. Q-VT builds upon the comprehensively validated Hybrid Plasma Equipment Model (HPEM) codes developed by the renowned plasma physicist Professor Mark Kushner for simulating non-equilibrium low pressure plasma processes. Q-VT includes an intuitive user interface, data visualisation and analysis capabilities, and convenient job/batch management. Plasma chemistry sets can be directly imported from QDB Examples of commonly used ICPs and CCPs are included Easy-to-use drawing tool for chamber design and modification: a tool simulation set-up service can be provided The ability to model complex plasma phenomena with additional modules (dust/radiation transport, ion kinetics, external circuits, etc.) Multi jobs run management system for managing large numbers of simulations Advanced reactor scale visualisation of scalar and vector plasma properties Possibility to import experimental results Ability to easily distribute and manage jobs over a cluster NEW: Import chemistries from QDB Contact us: Phone: +44 208 133 51 03 Email info@quantemol.com Quantemol Ltd 320 Angel City Road London EC1V 2NZ Calculate Arrhenius parameters from user-provided cross sections Three rf-voltages on one electrode, initial GUI for surface module Updated species list Add user reaction database, so no need to add the same reactions over and over manually (Optional) API to add your cross sections to HPEM library (currently you can only use hard coded cross sections
What can Q-VT model? Plasma tool geometry alterations Advanced volume and surface chemistries Variation of key plasma state variables with process parameter changes Ion flux on wafer level: ion and energy neutral energy/angular distribution functions, and fluxes of all species along the wafer Non-Maxwellian electron dynamics Complex electromagnetic plasma interactions (current coils, permanent magnets, multi-frequency power supply, plasma circuit interactions, electrodynamic effects on CCPs) Pulsed plasma discharges Fig.1 The simulation consists of a core simulation module, the HPEM, which can be extended with additional add-on modules to incorporate the physics of interest in a given plasma process. Applications of Q-VT Tool design and development Modelling of discharge and wafer level chemistry kinetics Modelling etch/deposition uniformity Examining tilting effects (when used with an additional scale profile model feature, specifically compatible with Synopsys TCAD software) Large wafer size simulation (12 inches and more)
In Quantemol-VT, tool settings can be easily modified through the intuitive design viewer. The simulation projects are organised and structured with a workbook management system. With the help of a graphical meshing tool, the chamber design can be drawn with materials of your choice in 2D (planar) and 2.5D (axisymmetric cylindrical geometry). Results can be plotted and analysed within Q-VT or exported as data files. Outputs from Q-VT include: 2D distributions of species densities, temperatures, fluxes, fields and power depositions, surface fluxes, timeresolved kinetics, spatially resolved EEDFs, and ion/neutral energy/angle distributions. Citations for the underlying simulation 1. J. Shoeb, M. M. Wang and M. J. Kushner, "Damage by Radicals and Photons During Plasma Cleaning of Porous low-k SiOCH. I. Ar/O2 and He/H2 Plasmas", J. Vac. Sci. Technol. A 30, 041303 (2012). 2. S. Tinck, W. Boullart and A. Bogaerts, "Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching: effects of SiO2chamber wall coating", Plasma Sources Sci. Technol. 20, 045012 (2011). 3. Y. Yang, M. Strobel, S. Kirk and M. J. Kushner, "Fluorine Plasma Treatments of Polypropylene Films: II. Modeling Reaction Mechanisms and Scaling", Plasma Proc. Polymers 7, 123 (2010).
The core physics behind Q-VT is a comprehensive model (Hybrid Plasma Equipment Model) developed by Professor Mark Kushner and others for modelling low pressure plasma processing reactors. The core simulation module includes Simulation of gaseous phase chemistry and surface sticking reactions Fluid transport model for species in the gaseous phase Heat transport due to reactions, conduction, diffusion and flow Electrostatic field solvers with the ability to apply DC and RF potentials to surfaces and coils Boltzmann solutions of electron kinetics Extensive database of cross-section reactions developed by Prof. Mark Kushner and his group Calculation of inductively coupled electromagnetic fields Additional add-on modules available 1 EMC Electron Monte Carlo 2 SKM Surface Kinetics Module 3 MAXWELL 4 PCMC 5 MICROWAVE Maxwell Equation Solver for CCPs Plasma Chemistry Monte Carlo Simulation and Ion Monte Carlo Simulation Finite Difference Time Domain Microwave Module (FDTDM) 6 CIRCUIT RF circuit module. 7 SPUTTER Sputtering 8 DTS Dust Transport Simulator 9 HV Photon beam injection 10 RADTRANS Radiation Transport Module (MCRTM) Consultancy As well as providing advanced modelling software, Quantemol also provides a unique consultancy service. With our suite of software and highly skilled team of scientists we provide complete bespoke results analyses. Consultancy projects range from small, quick calculations to comprehensive plasma chemistry development. Typical types of consultancy work provided are: Calculations of specific electron-molecule and electron-atom cross sections Industrial plasma tool simulations Plasma process parameter optimisations Plasma chemistry designs Plasma etching and deposition calculations General multiphysics problems (CFD, etc..) We work on the basis of complete confidentiality and understand the importance of protecting intellectual property. For more information please contact us: +44 208 133 51 03 info@quantemol.com
Price list Licence term Use Case Type of Licence Version Annual 1 year 3 years Support SE 7,260 14,520 3,300 Single Workstation NE 9,680 18,150 4,070 Non-commercial SE 12,100 24,200 5,280 Research group research NE 15,730 30,250 5,720 SE 19,360 37,510 6,380 Institution NE 24,200 41,140 6,710 SE 19,800 39,600 5,720 Commercial Single Workstation NE 26,400 49,500 6,270 research Site NE 33,000 60,500 7,370 General terms Commercial research - research by commercial organisations or for commercial organisations with results not disclosed to public access Non-commercial research - research by not-forprofit organisations producing publishable results All licences are floating type licences and can be moved from one PC to another. SE - Standard Edition NE - Network Edition, Single workstation licence - to be used on a single workstation with a possibility to be used by multiple users Research group licence - includes up to 5 workstations used by researchers in one group, can be installed on the cluster but the number of users should be limited to 5 within one group only Institution licence - covers an unlimited number of users across different groups within an institution Site licence - covers an unlimited number of users within a company HPEM database - an extensive electron impact cross-sections database is included. Min spec: Quantemol-VT software Linux x86, 64 bit operating system, 4 GB RAM (large calculations will require more RAM), 10 GB free disk space ** - perpetual licences for academic institutions include only 5 years of HPEM licence. If intending to continue using the software academic institutions are required to purchase a support for the 6th year of licence in order to get HPEM licence extension Use Case Non-commercial research Commercial research Proprietary chemistry data space in HPEM (NEW) Add-on module prices Type of Licence term* Licence 1 year 3 years Single Workstation 220 440 Research group 275 550 Institution 330 660 Single 1,650 3,300 Site 3,300 6,600 Any above 30% extra to the licence price Standard Edition on single workstation can use any number of cores to be run Network Edition of single workstation licence allows you to submit jobs across the network, but user will still have to share the work space Annual support includes initial training, e-mail and telephone support, bug fixes throughout the year. Add on modules should be purchased separately and we can advise which ones you might need The HPEM cross section library is included free of charge, additionally customers can upolad proprietary chemistry data and upload your own species and cross sections (new) or connect to QDB database via API (subject of QDB gold membership). Contact us on sales@quantemol.com for more details
Example 1 Argon ICP. Pressure: 10 mt; applied frequency 6.78 MHz; coil antenna. Left: electron density and temperature distributions at 100 W. Right: electron energy distribution functions at 50 W (top) and 200 W (bottom) Published: A. V. Vasenkov and M. J. Kushner, Electron energy distributions and anomalous skin depth effects in high-plasma-density inductively coupled discharges, Phys. Rev. E 66, 066411 (2002) Validation Example 2 Argon in a dc biased boundary electrode (BE) - ICP chamber (8.5 cm x 28 cm). Left: Ar + ion density at pressures: 7 mt, 14 mt, 28 mt, and 50 mt. Right: Plasma potential on axis at a fixed location in the chamber. Published: M. D. Logue, H Shin, W Zhu, L Xu, V M Donnelly, D J Economou, M J Kushner, Ion energy distributions in inductively coupled plasmas having a biased boundary electrode, Plas. Sourc. Sci. Tech., 21 (2012) 065009
Example 3 Etching of amorphous carbon (a-c) by PECVD with an N2/H2 gas mixture in a CCP tool (LAM 2300 Exelan Flex). Left: etch rate as a function of power (250 W to 1000W). Right: etch rate as a function of hydrogen content. Published: K Van Laer, S Tinck, V Samara, J F de Marneffe, A Bogaerts, Etching of low-k materials for microelectronics applications by means of N2/H2 plasma: modelling and experimental investigation, Plas. Source. Sci. Tech. 22 (2013) 025011 Example 4 Pulsed 13.56 MHz ICP in 15 mtorr argon. The pulse frequency was 10 khz, the duty cycle 20%. For EEDFsComparison (top right): Electron energy probability function in the on-phase For PulsedTeComparison (bottom right): Electron temperature as a function of time over on pulse cycle. Published: L. Liu et. al. "External Control of electron energy distributions in a dual tandem inductively coupled plasma", J. Appl. Phys. 118, 083303 (2015)
Example 5 Silicon Etch via Cl2/O2/Ar in a TCP reactor (LAM Research 2300 Versys Kiyo) In this study: pressure 20-80 mtorr; ICP power 500-1200W @13.56 MHz; dc bias -100 to -500 V. S. Tinck, W Boullart and A Bogaerts, Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by mesn of plasma-surface simulations and experiments, J. Phys. D: Appl. Phys. 42 (2009) 095204 Contact us: Phone: +44 208 133 51 03 Email info@quantemol.com Quantemol Ltd 320 Angel City Road London EC1V 2NZ