DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semicnductrs, SC7 April 1991
FEATURES Prtected against excessive input vltage surges by integrated back-t-back dides between gates and surce. DESCRIPTION Depletin type field-effect transistr in a plastic SOT143 micrminiature package with intercnnected surce and substrate. APPLICATIONS RF applicatins such as: UHF televisin tuners Prfessinal cmmunicatin equipment. handbk, halfpage 4 3 g 2 g 1 d PINNING PIN SYMBOL DESCRIPTION 1 s, b surce 2 d drain 3 g 2 gate 2 4 g 1 gate 1 1 2 s,b Tp view MAM39 Marking cde: MHp. Fig.1 Simplified utline (SOT143) and symbl. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V DS drain-surce vltage 2 V I D drain current 3 ma P tt ttal pwer dissipatin up t T amb =6 C 2 mw T j junctin temperature 15 C Y fs transfer admittance f = 1 khz; I D = 1 ma; V DS =15V; V G2 S =4V 18 ms C ig-1s input capacitance at gate 1 f = 1 MHz; I D = 1 ma; V DS = 15 V; V G2 S = 4 V 2.3 2.6 pf C rs feedback capacitance f = 1 MHz; I D = 1 ma; V DS = 15 V; V G2 S =4V 25 ff F nise figure f = 2 MHz G S = 2 ms; B S =B Spt ; I D = 1 ma; V DS =15V; V GS 2 =4V 1 db April 1991 2
LIMITING VALUES In accrdance with the Abslute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-surce vltage 2 V I D drain current (DC) 3 ma I D(AV) average drain current 3 ma I G1-S gate 1 surce ±1 ma I G1-S gate 2 surce ±1 ma P tt ttal pwer dissipatin up t T amb =6 C; nte 1 2 mw T stg strage temperature range 65 +15 C T j junctin temperature 15 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance frm junctin t ambient in free air; nte 1 46 K/W Nte t the Limiting values and the Thermal characteristics 1. Device munted n a ceramic substrate f 8 1.7 mm. 2 handbk, halfpage MGE792 P tt (mw) 1 1 2 T amb ( C) Fig.2 Pwer derating curve. April 1991 3
STATIC CHARACTERISTICS T j =25 C unless therwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I G1 SS gate cut-ff current V G1-S = ±5 V; V G2-S =V DS = ±5 na I G2 SS gate cut-ff current V G2-S = ±5 V; V G1-S =V DS = ±5 na V (BR)G1-SS gate-surce breakdwn vltage I G1-S = ±1 ma; V G2-S =V DS = ±6 ±2 V V (BR)G2-SS gate-surce breakdwn vltage I G2-S = ±1 ma; V G1-S =V DS = ±6 ±2 V I DSS drain current V DS =15V; V G1-S = ; V G2-S =4V 4 2 ma V (P)G1-S gate-surce cut-ff current I D =2µA; V DS = 15 V; V G2-S =4V 2.5 V V (P)G2-S gate-surce cut-ff current I D =2µA; V DS = 15 V; V G1-S = 2 V DYNAMIC CHARACTERISTICS Measuring cnditins (cmmn surce): I D = 1 ma; V DS =15V; V G2-S =4V; T amb =25 C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Y fs transfer admittance f = 1 khz 15 18 ms C ig1-s input capacitance at gate 1 f = 1 MHz 2.3 2.6 pf C ig2-s input capacitance at gate 2 f = 1 MHz 1.2 pf C rs feedback capacitance f = 1 MHz 25 ff C s utput capacitance f = 1 MHz.8 pf F nise figure f = 2 MHz; G S = 2 ms; B S =B Spt 1 db f = 8 MHz; G S = 3.3 ms; B S =B Spt 1.8 db G P pwer gain f = 2 MHz; G S = 2 ms; B S =B Spt ; 25 db G L =.5 ms; B L =B Lpt f = 8 MHz; G S = 3.3 ms; B S =B Spt ; G L = 1 ms; B L =B Lpt 18 db April 1991 4
PACKAGE OUTLINE handbk, full pagewidth.75.6.15.9 3. 2.8 1.9 4 3 A B.2 M A B 1.1 1 1.4 1.2 2.5 1 2 1.1 3.88.1.48.1.1 M A B MBC845 1.7 TOP VIEW Dimensins in mm. See als Sldering recmmendatins. Fig.3 SOT143. DEFINITIONS Data sheet status Objective specificatin Preliminary specificatin This data sheet cntains target r gal specificatins fr prduct develpment. This data sheet cntains preliminary data; supplementary data may be published later. This data sheet cntains final prduct specificatins. Limiting values Limiting values given are in accrdance with the Abslute Maximum Rating System (IEC 134). Stress abve ne r mre f the limiting values may cause permanent damage t the device. These are stress ratings nly and peratin f the device at these r at any ther cnditins abve thse given in the Characteristics sectins f the specificatin is nt implied. Expsure t limiting values fr extended perids may affect device reliability. Applicatin infrmatin Where applicatin infrmatin is given, it is advisry and des nt frm part f the specificatin. LIFE SUPPORT APPLICATIONS These prducts are nt designed fr use in life supprt appliances, devices, r systems where malfunctin f these prducts can reasnably be expected t result in persnal injury. Philips custmers using r selling these prducts fr use in such applicatins d s at their wn risk and agree t fully indemnify Philips fr any damages resulting frm such imprper use r sale. April 1991 5