DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995
DESCRIPTION PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers (3 to 86 MHz) and in microwave amplifiers such as radar systems, spectrum analyzers, etc., using SMD technology. PIN DESCRIPTION Code: FG 1 emitter 2 collector 3 base page 1 2 3 Bottom view MBK514 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CEO collector-emitter voltage open base 15 V I C DC collector current 1 ma P tot total power dissipation up to T s = 135 C (note 1) 1 W h FE DC current gain I C = 7 ma; V CE = 1 V; T j = 25 C 2 5 f T transition frequency I C = 75 ma; V CE = 1 V; 4 5 GHz f = 5 MHz; T j = 25 C G UM maximum unilateral power gain I C = 5 ma; V CE = 1 V; 12 db f = 5 MHz; T amb = 25 C F noise figure I C = 5 ma; V CE = 1 V; R s =6Ω; f = 5 MHz; T amb = 25 C 3.75 db LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 2 V V CEO collector-emitter voltage open base 15 V V EBO emitter-base voltage open collector 3 V I C DC collector current 1 ma I CM peak collector current f > 1 MHz 15 ma P tot total power dissipation up to T s = 135 C (note 1) 1 W T stg storage temperature 65 15 C T j junction temperature 15 C Note 1. T s is the temperature at the soldering point of the collector tab. September 1995 2
THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to up to T s = 135 C (note 1) 4 K/W soldering point Note 1. T s is the temperature at the soldering point of the collector tab. CHARACTERISTICS T j = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-off current I E = ; V CB = 1 V; 1 na h FE DC current gain I C = 7 ma; V CE = 1 V 2 5 f T transition frequency I C = 7 ma; V CE = 1 V; 4 5 GHz f = 5 MHz; T amb = 25 C C c collector capacitance I E = ; V CB = 1 V; f = 1 MHz 2 pf C e emitter capacitance I C = ; V EB =.5 V; f = 1 MHz 4 pf C re feedback capacitance I C = ; V CE = 1 V; f = 1 MHz 1.7 pf G UM maximum unilateral power gain (note 1) I C = 5 ma; V CE = 1 V; f = 5 MHz; T amb = 25 C F noise figure I C = 5 ma; V CE = 1 V; R s = 6 Ω; f = 5 MHz; T amb = 25 C Note 1. G UM is the maximum unilateral power gain, assuming S 12 is zero and S 21 2 G UM = 1 log-------------------------------------------------------------db. 2 2 1 S 11 1 S 22 12 db 3.75 db September 1995 3
4 C c (pf) MEA328 8 f T (GHz) MBB347 3 6 2 4 1 2 1 2 V CB (V) 5 I (ma) 1 C I E = ; f = 1 MHz; T j =25 C. V CE = 1 V; f = 5 MHz; T amb =25 C. Fig.2 Collector capacitance as a function of collector-base voltage. Fig.3 Transition frequency as a function of collector current. 8 MBB345 4 MEA329 h FE G UM (db) 6 3 4 2 2 1 1 I (ma) 2 C 1 1 2 1 3 1 4 f (MHz) V CE = 1 V; T j =25 C. I c = 5 ma; V CE = 1 V; T amb =25 C. Fig.4 DC current gain as a function of collector current. Fig.5 Maximum unilateral power gain as a function of frequency. September 1995 4
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 D B A b3 E H E 1 2 3 L b2 c w M b 1 e 1 e 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b 1.48.35 b 2.53.4 b 3 1.8 1.4 c.44.37 D 4.6 4.4 E 2.6 2.4 e 3. e 1 1.5 H E 4.25 3.75 L min..8 w.13 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT89 97-2-28 September 1995 5
DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 6