Hyperfast Rectifier, 2 x 5 FRED Pt 3L TO-220B PRIMRY CHRCTERISTICS Base common cathode 2 2 Common node cathode node 3 Package 3L TO-220B I F(V) 2 x 5 V R 300 V V F at I F 0.85 V t rr typ. See Recovery table T J max. 75 C Circuit configuration Common cathode FETURES Hyperfast recovery time Low forward voltage drop 75 C operating junction temperature Low leakage current Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 DESCRIPTION / PPLICTIONS 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Peak repetitive reverse voltage V RRM 300 V verage rectified forward current per diode T C = 53 C 5 I F(V) per device 30 Non-repetitive peak surge current I FSM T C = 25 C 50 Operating junction and storage temperatures T J, T Stg -65 to +75 C ELECTRICL SPECIFICTIONS ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = 0 μ 300 - - I F = 5 -.0.25 Forward voltage V F I F = 5, T J = 25 C - 0.85 0.95 V R = V R rated - - 40 Reverse leakage current I R T J = 25 C, V R = V R rated - 8 200 μ Junction capacitance C T V R = 300 V - 38 - pf Series inductance L S Measured lead to lead 5 mm from package body - 8 - nh V revision: 02-ug-7 Document Number: 9698 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
DYNMIC RECOVERY CHRCTERISTICS (T C = 25 C unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS I F =, di F /dt = 50 /μs, V R = 30 V - - 36 Reverse recovery time t rr I F =, di F /dt = 0 /μs, V R = 30 V - - 30-33 - ns T J = 25 C - 48 - Peak recovery current I RRM T I F = 5 J = 25 C - 2.8 - di F /dt = 200 /μs T J = 25 C V R = 200 V - 6.5 - - 46 - Reverse recovery charge Q rr T J = 25 C - 60 - nc THERML MECHNICL SPECIFICTIONS PRMETER SYMBOL MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg -65-75 C Thermal resistance, junction to case per diode R thjc - -.4 C/W Marking device Case style 3L TO-220B 30CTH03 I F - Instantaneous Forward Current () 0 T J = 75 C T J = 25 C I R - Reverse Current (m) 0 0. 0.0 T J = 75 C T J = 50 C T J = 25 C T J = 0 C T J = 75 C T J = 50 C 0.4 0.6 0.8.0.2.4.6 V F - Forward Voltage Drop (V) Fig. - Typical Forward Voltage Drop Characteristics 0.00 0 50 0 50 200 250 300 V R - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) 00 0 0 50 0 50 200 250 300 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage revision: 02-ug-7 2 Document Number: 9698 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
Z thjc - Thermal Impedance ( C/W) D = 0.50 t D = 0.20 0. D = 0. t 2 D = 0.05 Notes: Single pulse D = 0.02. Duty factor D = t (thermal resistance) D = 0.0 /t 2. 2. Peak T J = P DM x Z thjc + T C 0.0 0.0000 0.000 0.00 0.0 0. t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM. 80 0 llowable Case Temperature ( C) 70 60 50 DC Square wave (D = 0.50) Rated V R applied See note () 40 0 5 5 20 25 t rr (ns) V R = 200 V T J = 25 C I F = 5 0 00 I F(V) - verage Forward Current () di F /dt (/µs) Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 7 - Typical Reverse Recovery Time vs. di F /dt 20 00 I F = 5 verage Power Loss (W) 6 2 8 4 DC RMS limit D = 0.0 D = 0.02 D = 0.05 D = 0. D = 0.20 D = 0.50 Q rr (nc) 0 T J = 25 C V R = 200 V 0 0 5 5 20 25 I F(V) - verage Forward Current () Fig. 6 - Forward Power Loss Characteristics 0 00 di F /dt (/µs) Fig. 8 - Typical Stored Charge vs. di F /dt Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = inverse power loss = V R x I R ( - D); I R at V R = rated V R revision: 02-ug-7 3 Document Number: 9698 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
(3) t rr 0 I F t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr ORDERING INFORMTION TBLE Fig. 9 - Reverse Recovery Waveform and Definitions Device code VS- 30 C T H 03 -M3 2 3 4 5 6 7 - product 2 - Current rating (30 = 30 ) 3 - Circuit configuration: 4 C = common cathode 4 - Package: 4 T = 3L TO-220B 5 - H = hyperfast recovery 6 - Voltage rating (03 = 300 V) 7 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION 50 00 ntistatic plastic tube Dimensions Part marking information LINKS TO RELTED DOCUMENTS www.vishay.com/doc?9654 www.vishay.com/doc?95028 revision: 02-ug-7 4 Document Number: 9698 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
DIMENSIONS in millimeters and inches 3L TO-220B Outline Dimensions Q (6) E Ø P 0.04 M B M (6) H (7) B (H) (E) Thermal pad 2 3 D D C C L (2) (6) D c D2 (6) D 3 x b 3 x b2 Detail B 2 Detail B L C E (6) Base metal (b, b2) Plating 0.05 M B M 2 x e e View - c c (4) (4) b, b3 Section C - C and D - D Lead tip Conforms to JEDEC outline TO-220B SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.25 4.65 0.67 0.83 D2.68 2.88 0.460 0.507 6.4.40 0.045 0.055 E..5 0.398 0.44 3, 6 2 2.50 2.92 0.098 0.5 E 6.86 8.89 0.270 0.350 6 b 0.69.0 0.027 0.040 e 2.4 2.67 0.095 0.5 b 0.38 0.97 0.05 0.038 4 e 4.88 5.28 0.92 0.208 b2.20.73 0.047 0.068 H 6.09 6.48 0.240 0.255 6, 7 b3.4.73 0.045 0.068 4 L 3.52 4.02 0.532 0.552 c 0.36 0.6 0.04 0.024 L 3.32 3.82 0.3 0.50 2 c 0.36 0.56 0.04 0.022 4 Ø P 3.54 3.9 0.39 0.54 D 4.85 5.35 0.585 0.604 3 Q 2.60 3.00 0.2 0.8 D 8.38 9.02 0.330 0.355 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Lead dimension and finish uncontrolled in L (3) Dimension D, D, and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b, b3, and c apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H, D2, and E (7) Outline conforms to JEDEC TO-220, except D2 (minimum) Revision: 03-ug-7 Document Number: 9654 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
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