BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT363/SC88 which is designed for low power surface mount applications. Features S and NS Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ11 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* (3) SOT363/SC88 CASE 419B STYLE 1 (2) (1) MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit CollectorEmitter oltage CEO 65 45 3 CollectorBase oltage CBO 8 5 3 EmitterBase oltage EBO 6. 6. 5. Collector Current Continuous I C 1 1 1 madc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation Per Device FR5 Board (Note 1) T A = Derate Above Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR5 = 1. x.75 x.62 in P D 38 25 3. R JA 328 mw mw mw/ C C/W T J, T stg 55 to +15 C Q 1 (4) (5) (6) MARKING DIAGRAM 6 1 1x M 1x = Specific Device Code x = B, F, G, L M = Date Code = PbFree Package Q 2 (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 215 August, 216 Rev. 11 1 Publication Order Number: BC846BDW1T1/D
ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown oltage ( 1 ma) BC846 BC847 BC848 (BR)CEO 65 45 3 CollectorEmitter Breakdown oltage ( 1 A, EB = ) BC846 BC847 BC848 (BR)CES 8 5 3 CollectorBase Breakdown oltage ( 1 A) BC846 BC847 BC848 (BR)CBO 8 5 3 EmitterBase Breakdown oltage (I E = 1. A) BC846 BC847 BC848 (BR)EBO 6. 6. 5. Collector Cutoff Current ( CB = 3 ) ( CB = 3, T A = ) I CBO 15 5. na A ON CHARACTERISTICS DC Current Gain ( 1 A, CE = 5. ) BC846B, BC847B BC847C, BC848C ( 2. ma, CE = 5. ) BC846B, BC847B BC847C, BC848C h FE 2 42 15 27 29 52 45 8 CollectorEmitter Saturation oltage ( 1 ma, I B =.5 ma) ( 1 ma, I B = 5. ma) CE(sat).25.6 BaseEmitter Saturation oltage ( 1 ma, I B =.5 ma) ( 1 ma, I B = 5. ma) BaseEmitter oltage ( 2. ma, CE = 5. ) ( 1 ma, CE = 5. ) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product ( 1 ma, CE = 5. dc, f = 1 MHz) Output Capacitance ( CB = 1, f = 1. MHz) BE(sat) BE(on) 58.7.9 66 7 77 f T 1 C obo 4.5 m MHz pf Noise Figure (.2 ma, CE = 5. dc, R S = 2. k,f = 1. khz, BW = 2 Hz) NF 1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. db 2
TYPICAL CHARACTERISTICS BC846BDW1 6 5 4 3 2 1 55 C 6 5 4 3 2 1 55 C CE = 1.1.1.1 1.1.1.1 1 Figure 1. DC Current Gain at Figure 2. DC Current Gain at CE = 1 CE(sat), COLLEMITT SATURATION OLTAGE ().25 I C /I B = 1.2.15.1.5 55 C. Figure 3. CE(sat) at I C /I B = 1 CE(sat), COLLEMITT SATURATION OLTAGE ().3 I C /I B = 2.25.2.15.1.5 55 C Figure 4. CE(sat) at I C /I B = 2 BE(sat), BASEEMITT SATURATION OLTAGE () 1.1 1. I C /I B = 1.9 55 C.8.7.6.5.4.3.2 Figure 5. BE(sat) at I C /I B = 1 BE(sat), BASEEMITT SATURATION OLTAGE () 1.1 1. I C /I B = 2.9 55 C.8.7.6.5.4.3.2 Figure 6. BE(sat) at I C /I B = 2 3
TYPICAL CHARACTERISTICS BC846BDW1 BE(on), BASEEMITTER OLTAGE () 1.2 1.1 1..9.8.7.6.5.4.3 55 C.2 Figure 7. BE(on) at f T, CURRENTGAIN BANDWIDTH PRODUCT 1 1 CE = 1 T A = 1.1 1 1 1 I C, COLLECTOR CURRENT (ma) Figure 8. Current Gain Bandwidth Product C, CAPACITANCE (pf) 1 C ib C ob 1.1 1 1 1 R, REERSE OLTAGE () Figure 9. Capacitances T A = CE, COLLECTOREMITTER OLT- AGE () 2 1.6 1.2.8.4 1 ma 2 ma 5 ma 1 ma T A =.1.1 1 1 1 Figure 1. Collector Saturation Region B, TEMPERATURE COEFFICIENT (m/ C).2.6 1 1.4 1.8 2.2 2.6 B, for BE 55 C to 3.1 1 1 1 Figure 11. BaseEmitter Temperature Coefficient 4
TYPICAL CHARACTERISTICS BC847BDW1 6 6 CE = 1 5 4 3 2 1 55 C 5 4 3 2 1 55 C CE(sat), COLLEMITT SATURATION OLTAGE () 1 Figure 12. DC Current Gain at.25 I C /I B = 1.2.15.1.5 55 C. Figure 14. CE at I C /I B = 1 CE(sat), COLLEMITT SATURATION OLTAGE () 1 Figure 13. DC Current Gain at CE = 1.3 I C /I B = 2.25.2.15.1.5 55 C. Figure 15. CE at I C /I B = 2 BE(sat), BASEEMITT SATURATION OLTAGE () 1.2 I C /I B = 1 1. 55 C.8.6.4.2. Figure 16. BE(sat) at I C /I B = 1 BE(sat), BASEEMITT SATURATION OLTAGE () 1.2 I C /I B = 2 1..8 55 C.6.4.2. Figure 17. BE(sat) at I C /I B = 2 5
TYPICAL CHARACTERISTICS BC847BDW1 BE(on), BASEEMITTER OLTAGE () 1.2 1.1 1..9.8.7.6.5.4.3.2 55 C Figure 18. BE(on) at f T, CURRENTGAIN BANDWIDTH PRODUCT 1 1 CE = 1 T A = 1.1 1 1 1 I C, COLLECTOR CURRENT (ma) Figure 19. Current Gain Bandwidth Product C, CAPACITANCE (pf) 1 T A = C ib C ob 1.1 1 1 1 R, REERSE OLTAGE () Figure 2. Capacitances CE, COLLECTOREMITTER OLT- AGE () 2 1.6 1.2.8.4 1 ma 2 ma 5 ma 1 ma T A =.1.1 1 1 1 Figure 21. Collector Saturation Region B, TEMPERATURE COEFFICIENT (m/ C).2.6 1 1.4 B, for BE 1.8 55 C to 2.2 2.6 3.1 1 1 1 Figure 22. BaseEmitter Temperature Coefficient 6
TYPICAL CHARACTERISTICS BC848CDW1 1 9 8 7 6 5 4 3 55 C 2 1 1 Figure 23. DC Current Gain at 1 9 CE = 1 8 7 6 5 4 55 C 3 2 1 1 Figure 24. DC Current Gain at CE = 1 CE(sat), COLLEMITT SATURATION OLTAGE ().2.18 I C /I B = 1.16.14.12.1.8.6.4 55 C.2. Figure 25. CE at I C /I B = 1 CE(sat), COLLEMITT SATURATION OLTAGE ().3 I C /I B = 2.25.2.15.1.5 55 C. Figure 26. CE at I C /I B = 2 BE(sat), BASEEMITT SATURATION OLTAGE () 1.1 I C /I B = 1 1..9.8 55 C.7.6.5.4.3.2 Figure 27. BE(sat) at I C /I B = 1 BE(sat), BASEEMITT SATURATION OLTAGE () 1.2 I C /I B = 2 1..8 55 C.6.4.2. Figure 28. BE(sat) at I C /I B = 2 7
TYPICAL CHARACTERISTICS BC848CDW1 BE(on), BASEEMITTER OLTAGE () 1..9.8.7.6.5.4.3.2.1 55 C f T, CURRENTGAIN BANDWIDTH PRODUCT. Figure 29. BE(on) at 1 1 CE = 1 T A = 1.1 1 1 1 I C, COLLECTOR CURRENT (ma) Figure 3. Current Gain Bandwidth Product C, CAPACITANCE (pf) 1 C ib C ob 1.1 1 1 1 R, REERSE OLTAGE () Figure 31. Capacitances T A = CE, COLLECTOREMITTER OLT- AGE () 2 1.6 1.2.8.4 1 ma 2 ma 5 ma 1 ma T A =.1.1 1 1 1 Figure 32. Collector Saturation Region B, TEMPERATURE COEFFICIENT (m/ C).2.6 1 1.4 1.8 2.2 2.6 B, for BE 55 C to 3.1 1 1 1 Figure 33. BaseEmitter Temperature Coefficient 8
1. D =.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED).1.1.2.1.5.2.1 P (pk) t 1 t2 Z JA (t) = r(t) R JA R JA = 328 C/W MAX D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) R JC (t) DUTY CYCLE, D = t 1 /t 2.1 SINGLE PULSE 1. 1 1 1. k 1 k 1 k 1. M t, TIME (ms) Figure 34. Thermal Response IC, COLLECTOR CURRENT (ma) -2-1 -5-1 -5. -2. -1. T A = T J = BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 3 ms -5. -1-3 -45-65 -1 CE, COLLECTOR-EMITTER OLTAGE () Figure 35. Active Region Safe Operating Area 1 s BC558 BC557 BC556 The safe operating area curves indicate I C CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 35 is based upon T J(pk) = ; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 1% provided T J(pk). T J(pk) may be calculated from the data in Figure 34. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 9
ORDERING INFORMATION Device Markings Package Shipping BC846BDW1T1G 1B SOT363 (PbFree) 3, / Tape & Reel SBC846BDW1T1G* 1B SOT363 (PbFree) BC847BDW1T1G 1F SOT363 (PbFree) SBC847BDW1T1G* 1F SOT363 (PbFree) BC847BDW1T3G 1F SOT363 (PbFree) SBC847BDW1T3G* 1F SOT363 (PbFree) NSBC847BDW1T2G* 1F SOT363 (PbFree) BC847CDW1T1G 1G SOT363 (PbFree) SBC847CDW1T1G* 1G SOT363 (PbFree) BC848CDW1T1G 1L SOT363 (PbFree) NSBC848CDW1T1G* 1L SOT363 (PbFree) 3, / Tape & Reel 3, / Tape & Reel 3, / Tape & Reel 1, / Tape & Reel 1, / Tape & Reel 1, / Tape & Reel 3, / Tape & Reel 3, / Tape & Reel 3, / Tape & Reel 3, / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. *S and NS Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ11 Qualified and PPAP Capable. 1
PACKAGE DIMENSIONS E 2X bbb H D e 6X ccc C A D 6 5 4 1 2 3 B TOP IEW SIDE IEW A1 2X D E1 aaa H aaa 2X 3 TIPS 6X b ddd M A2 A C D L2 C C SC88/SC76/SOT363 CASE 419B2 ISSUE Y DETAIL A c END IEW RECOMMENDED SOLDERING FOOTPRINT* SEATING PLANE A-B D 6X.3 H L DETAIL A GAGE PLANE 6X.66 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU- SIONS, OR GATE BURRS SHALL NOT EXCEED.2 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN.8 AND.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.8 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI- TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. MILLIMETERS DIM MIN NOM MAX A 1.1 A1..1 INCHES MIN NOM MAX.43..4 A2.7.9 1..27.35.39 b.15.2.25.6.8.1 C.8.15.22.3.6.9 D 1.8 2. 2.2.7.78.86 E 2. 2.1 2.2.78.82.86 E1 1.15 1.25 1.35.45.49.53 e.65 BSC.26 BSC L.26.36.46.1.14.18 L2.15 BSC.6 BSC aaa.15.6 bbb.3.12 ccc.1.4 ddd.1.4 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 2.5.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patentmarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 336752175 or 8344386 Toll Free USA/Canada Fax: 336752176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 291 Japan Customer Focus Center Phone: 813581715 11 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative BC846BDW1T1/D