Research Article Performance Analysis of γ-radiation Test Monitor Using Monocrystalline n+pp++ Silicon Solar Cell: CsI(Tl) Scintillator

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Advances in Materials Science and Engineering, Article ID 345831, 5 pages http://dx.doi.org/10.1155/2014/345831 Research Article Performance Analysis of γ-radiation Test Monitor Using Monocrystalline n+pp++ Silicon Solar Cell: Scintillator Ali Abd El-Salam Ibrahim 1,2 and Mostafa Abd El-Fattah El-Aasser 1,3 1 Physics Department, Faculty of Science, Northern Border University, Arar 1321, Saudi Arabia 2 Physics Department, Faculty of Science, Tanta University, Tanta 31527, Egypt 3 Physics Department, Faculty of Science, Ain Shams University, Cairo 11782, Egypt Correspondence should be addressed to Ali Abd El-Salam Ibrahim; ali 02us@yahoo.com Received 19 October 2014; Accepted 24 November 2014; Published 15 December 2014 Academic Editor: Tao Zhang Copyright 2014 A. A. E.-S. Ibrahim and M. A. E.-F. El-Aasser. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The silicon solar cells are largely insensitive to gamma-radiation because the radiation passes through solar cells without imparting all of its energy. In order to enhance the sensitivity to radiation, the solar cells are coupled to scintillator. With the help of n+pp++ PESC monocrystalline silicon solar cells and scintillators, a gamma-radiation test monitor (TM) is developed. Due to safety concerns, a convenience relatively intense 60 Co gamma-source is used as a suitable substitute for spent fuel. Two designs made of two representative arrays of monocrystalline solar cells are suggested. The induced current and voltage generated by these solar cells are measured. The temperature dependence of the induced current and the angular characteristic of the TM, for both designs, are presented. In comparison to conventional gamma-ray sensors, the s exhibited better performance than the conventional types. Design II is found to be more efficient than I and superior performance for all of the measured parameters is obtained. 1. Introduction Recently, gamma-radiation monitors are commonly used in medicine, research, and industrial facilities to protect researchers/workers from radiation accidents or emergencies where radiation-generating sources, machines, or apparatuses are installed [1]. Most γ-radiation monitors are composed of several major components such as a detector, an amplifier, a high-voltage power supply, and a meter. It costs a large amount of money as well as maintenance costs. Troubles due to rearranging such conventional monitors in a position at a short distance from high-intensity γ-emittingsources can be avoided by using low cost and safe solution. Solar cells have received considerable research attention, becauseofthedevelopmentofvariouscommerciallyavailable solar-powered products and equipment. They also exhibit a fair response, to other electromagnetic radiation with a substantially shorter wavelength, for example, X- and γ-rays. Potential applications of solar cells include a γ-ray doserate meter [2], a monitor of high γ-ray dose rates [3], and determination of gamma dose by monocrystalline silicon n+pp++ solar cell [4]. Conventional solar cells generally exhibit a good spectral response to visible radiation which has a wavelength from 400 to 800 nm [5].Adirectionallysensitivelarge-arearadiation monitor [6]and a gamma cell whose operation is based on γirradiation by radioactive wastes [7]have been done.further developments were limited due to their unsuitable sensitivity to γ-raysaswellasthesmallsizeofsensitivearea. Single crystal-type silicon solar cells are directly sensitive to gamma-radiation, although their sensitivities are very poor because gamma-radiation passes through the thin solar cells without imparting all of its energy. However, the induced current of the solar cell can be considerably improved by coupling it to a scintillator. The electric current generated by solar cells has been enhanced by improving the spectral response of the solar cells and enlarging their sensitive area [8]. In this work we have examined the characteristics of a γ-radiation monitor made of solar cells. The test monitor

2 Advances in Materials Science and Engineering Cell type Single crystal silicon Table 1: Dimensions and physical properties of (a) solar cell and (b) scintillator [9]employed. Solar cell area (cm 2 ) Sensitive area with CsI(TI) (cm 2 ) Peak sensitivity wavelength (μm) (a) Solar cell n+pp++ Thickness (μm) Short circuit current (A) Open circuit voltage (V) Conversion efficiency % Output power (W) 10 10 5 5 0.5 to 0.53 400 3.2 0.6 16 1.2 1.4 Note: the electrical parameters for monocrystalline solar cells n+pp++ PESC of dimensions (10 cm 10 cm) are related to the conditions of solar irradiation 1000 W/m 2, air mass (AM) 1.5 spectrum, and cell temperature 25 C. (b) scintillator Light output (%) Max. emission wavelength (μm) Decay time (ns) H. thickness (cm) Density (gm/cm 3 ) Melting point ( C) Dimensions (mm 3 ) 45 50 550 10 3 2.0 4.51 894 50 50 10 Note: light output: light output % of NaI(Tl); H. thickness: half-thickness value for 137 Cs(662 kev). (TM) has been made of a slice of scintillator sandwiched between two monocrystalline silicon solar cells. That was design I, while two sandwiches formed design II. The induced current and voltage generated by both designs were measured. The angular and temperature characteristics have been studied using a 60 C γ-source. 2. TM Design The structure of the TM is shown in Figure 1(a). Themain specifications, dimensions of the solar cell, and scintillatorspecificationsaresummarizedintable 1.TheTM consists of two monocrystalline silicon solar cells of the construction n+pp++ PESC (passivated emitter solar cell) with a sensitive area 10.0 10.0 cm 2 with scintillation crystal of dimensions 5.0 5.0 1.0 cm 3, respectively. The scintillator slice is sandwiched by the two solar cells so that theentrancewindow(i.e.,n-type)ofeachsolarcellisattached to one face of the slice, and the opposite face of each cell (i.e., p-type) is protected by a 1 mm thick backing plate of aluminum supported by 3 mm glass sheet. To avoid ambient light affecting the solar cells, the TM was covered with a black cloth shielding bag. The output terminals of both solar cells/sandwich were connected in parallel to measure the inducedcurrentandinseriestomeasuretheinducedvoltage. The induced current was measured by an electrometer (digital nanoammeter, model DNM-121). The induced voltage was measured by a CASSY meter coupled to a microvolt bridge. The sampling time for the induced current can be controlled arbitrarily manually to be 1 min as a minimum time interval. 3. Results and Discussions Characteristic curve (i.e., sensitivity response) and angular and temperature characteristics of the TM are examined using a 60 Co γ-source of activity of 740 kbq. Figure 2 shows the sensitivity (i.e., induced current) curves plotted on a linear graph, which is measured by changing the distance Al foil 17 mm 10 mm Glass plate scintillator scintillator scintillator Top view 100 mm 50 mm (a) (b) (c) (d) Glass plate scintillator Al foil Figure 1: (a) The structure of TM-design I, (b) the equivalent circuit of (a), (c) TM-design II for induced current measurements, and (d) TM-design II for the induced voltage measurements. between the γ-source and TM-designs I and II. Each point shows the mean value of the induced current which is measured at each position during 1 min intervals in a 10 min exposure period. By least-squares fitting of the experimental

Advances in Materials Science and Engineering 3 0.9 10 0.8 0.7 NaI(Tl) Induced current (μa) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 II I 20 40 60 80 100 Light output (arbitrary) 5 0 BC400 200 400 600 800 1000 Distance (cm) Wavelength (nm) Figure 2: The induced current generated by TM-designs I and II. Figure 3: Light output versus wavelength for NaI(Tl),, and BC400 scintillators [8]. Table 2 Design Intercept Intercept I 0.47899 0.01337 0.00412 2.04641E 4 0.98058 R 2 13 12 II 0.94553 0.02234 0.00829 3.42085E 4 0.98653 points, we have determined the relation between the induced current from the TM and the distance for the two designs. They are given by Induced voltage (μv) 11 10 9 II For design I: I(μA) = 0.47899 0.00412d (cm), For design II: I(μA) = 0.94553 0.00829d (cm). Resultsoflinearfittingofinducedcurrentobtainedby TM for designs I and II are shown in Table 2. TM-design II shows an improvement of the induced current by nearly 100%. The enhancement in the generated inducedcurrentbythesolarcellsisduetoaddingthe scintillator. This type of scintillators has a larger density, 4.5 g/cm 3, than the other scintillators. The maximum emission wavelength of the scintillator, where the most energy can be released, is in the region of 530 nm, as shown in Figure 3, which is close to the area of maximum sensitivity of the monocrystalline silicon solar cell. On the other hand, the obtained induced voltage as a function of distance between the gamma-source and TMdesigns I and II is illustrated as shown in Figure 4. A little variation of the induced voltage is obtained. The relationship between the induced voltage and distance is given by For design I: V(μV) = 8.63444 0.00817d (cm), For design II: V(μV) = 12.21022 0.0118d (cm). ResultsoflinearfittingofinducedvoltageobtainedbyTM for designs I and II are shown in Table 3. The induced voltage generated by TM is almost independent of the incident angle of the gamma-radiation. (1) (2) 8 7 I 20 40 60 80 100 Distance (cm) Figure 4: The induced voltage generated by TM-designs I and II. Design Intercept Intercept Table 3 I 8.63444 0.06536 0.00817 0.001 0.89131 II 12.21022 0.0651 0.0118 9.96608E 4 0.94565 The solar cells themselves, without scintillators, are essentially unresponsive to gamma-radiation. Since only a part of the gamma-radiation energy is absorbed by the solar cells, most of the induced photovoltage is produced by the light generated in the scintillator [8]. This means that the light is uniformly generated by gamma-rays entering the scintillator and the amount of generated induced voltage is decided only by the volume of the scintillator, regardless of the incident angle of gamma-rays. TheangularcharacteristicoftheTMisshowninFigure 5. The induced current is measured at a distance of 50 cm away R 2

4 Advances in Materials Science and Engineering Table 4 Design Intercept Intercept R 2 I 0.24221 3.86911 10 4 5.77143 10 4 7.73718 10 6 0.9991 0.6 0.29 Induced current (μv) 0.5 0.4 0.3 0.2 II I Induced current (μa) 0.28 0.27 0.26 0.1 0 60 120 180 240 300 360 θ (deg) 0.25 20 30 40 50 60 70 80 Temperature ( C) Figure 5: The angular characteristic of the induced current obtained by TM-designs I and II. Figure 6: The temperature dependence of the induced current generated by TM-design I. from the γ-source. The orientation of the TM exposed to γrays at the 0 source angle is also plotted in the figure as a starting point. The TM was rotated at 30 steps around a central axis, and the induced current is measured each time. The measured induced currents are normalized to the value obtained at the position of 0 source angle. The generated induced current by the TM receiving γ-radiation is slightly dependent on the angle of incidence. Attenuation of about 26% was observed at 90 and 270 source directions with TMdesign I, respectively, in agreement with measurements of [10]. While the angular characteristic of TM-design II shows an attenuation of nearly 8%, observed at 90 and 270,respectively, the amount of the induced current depends mainly on the effective area of the CsI(TI) scintillator seen by the γsource. It is clear from the graph that TM-design II is more efficient as a γ-ray monitor due to its uniform angular distribution. Results of linear fitting of induced current with temperatureobtainedbytmfordesigniareshownintable 4. The temperature characteristic of the TM is shown in Figure 6. The induced current as a function of temperature is linear, given by I(μA) = 5.77143 10 4 T( C) + 0.24221. (3) The TM is placed in an oven until its temperature reaches 80 C.ThentheinducedcurrentismeasuredwhiletheTM, atadistanceof50cmfromtheγ-source, is left to cool. The induced current slightly increases with increasing temperature. This suggests that the scintillation efficiency of TM slightly increases with temperature over this range. The induced current change per degree is 0.577 na/ C, which is a very small value. This suggests that TM is a good γ-monitor, temperature independent. Design II is not recorded because itisexpectedtogivethesamevaluedi/dt = 0.577 na/ C with higher levels of induced currents. 4. Conclusion The present study is carried out to investigate the performance of a gamma-ray monitor composed of a monocrystalline silicon solar cell coupled to CsI(TI) scintillator. Two designs have been used. Experiment has shown that the TM exposed to gamma-radiation demonstrates the following characteristics. (a) TM is able to generate larger induced current more than the solar cell without CsI(TI) scintillator crystals. (b) TM exhibits a good linear response to the gammaray exposure. It is easy to use, with good sensitivity, relative to the conventional ones. (c) TM is relatively inexpensive and requires no electrical power supply or any complex electronic equipment. (d) Radiation, with very large doses, would cause some degradation; hence recalibration will be needed. (e) TM-design II is more efficient than TM-design I. (f) The induced voltage is almost independent of the incident angle of the gamma-radiation entering the cell, particularly design II. Conflict of Interests The authors declare that there is no conflict of interests regarding the publication of this paper.

Advances in Materials Science and Engineering 5 Acknowledgment The authors would like to thank the Deanship of Scientific Research, Northern Border University, Arar, Saudi Arabia, for financial support and offering available facilities. References [1] L. H. Lanzl, J. H. Pingel, and J. H. Rust, Radiation Accidents and Emergencies in Medicine, Research, and Industry, Charles CThomas,1965. [2] M. Ashry, Using of GaAs diode as gamma rays sensor for dose rate measurements, European International Science and Technology,vol.2,no.3,pp.219 225,2013. [3] L. Musilek and P. Fowles, Directional dependence of solar cells used as monitors of high γ-ray dose rates, The International Applied Radiation and Isotopes, vol.33,no.12,pp. 1473 1474, 1982. [4] H. M. Diab, A. Ibrahim, and R. El-Mallawany, Silicon solar cells as a gamma ray dosimeter, Measurement, vol.46,no.9, pp. 3635 3639, 2013. [5] Sanyo Technical Data Sheets, Amonon, 1995. [6] S. Abdul-Majid, Use of a solar panel as a directionally sensitive large-area radiation monitor for direct and scattered x-rays and gamma-rays, International Radiation Applications and Instrumentation, vol. 38, no. 12, pp. 1057 1060, 1987. [7] J. Dubow, Hydrogen and methane synthesis through radiation catalysis, US DOE Report DOE-ER-4258-T-1, 1980. [8] N. Horiuchi, N. Iijima, S. Hayashi, and I. Yoda, Proposal of utilization of nuclear spent fuels for gamma cells, Solar Energy Materials & Solar Cells,vol.87,no.1 4,pp.287 297,2005. [9] BICORN Technical Data Sheets, Bicron Scintillation Products, 1995. [10] N. Horiuchi, K. Taniguchi, M. Kamiki, T. Kondo, and M. Aritomi, The characteristics of solar cells exposed to γ-radiation, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,vol.385,no.1,pp.183 188,1997.

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