Self-assembled and intercalated film of reduced. graphene oxide for a novel vacuum pressure sensor

Similar documents
School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon , Korea.

Biologically Inspired Organic Light-Emitting Diodes

Supplementary information

Supporting Information: Poly(dimethylsiloxane) Stamp Coated with a. Low-Surface-Energy, Diffusion-Blocking,

Supporting Information. Fast Synthesis of High-Performance Graphene by Rapid Thermal Chemical Vapor Deposition

Supplementary Figure 1: Micromechanical cleavage of graphene on oxygen plasma treated Si/SiO2. Supplementary Figure 2: Comparison of hbn yield.

High Power Aqueous Zinc-Ion Batteries for Customized Electronic Devices

Low Power Phase Change Memory via Block Copolymer Self-assembly Technology

Supporting Information

Doped Sites at Basal-Planes

Efficient Co-Fe layered double hydroxide photocatalysts for water oxidation under visible light

Super Flexible, High-efficiency Perovskite Solar Cells Employing Graphene Electrodes: Toward Future Foldable Power Sources

SUPPLEMENTARY INFORMATION

Stretchable Graphene Transistors with Printed Dielectrics and Gate Electrodes

>1000-Fold Lifetime Extension of Nickel Electromechanical Contact Device via Graphene

Flexible nonvolatile polymer memory array on

Multi-color broadband visible light source via GaN hexagonal. annular structure

Supplementary Figure 1 Experimental setup for crystal growth. Schematic drawing of the experimental setup for C 8 -BTBT crystal growth.

Work-Function Decrease of Graphene Sheet. Using Alkali Metal Carbonates

Supplementary Materials for

Metal-Organic Framework Templated Catalysts: Dual Sensitization of PdO-ZnO Composite on Hollow SnO 2 Nanotubes for Selective

Electronic Supplementary Information

Tailoring of Electron Collecting Oxide Nano-Particulate Layer for Flexible Perovskite Solar Cells. Gajeong-Ro, Yuseong-Gu, Daejeon , Korea

Hysteresis-free low-temperature-processed planar perovskite solar cells with 19.1% efficiency

Nanochannel-Assisted Perovskite Nanowires: Growth Mechanisms. to Photodetector Applications

Electronic Supplementary information (ESI) for. High-Performance Electrothermal and Anticorrosive Transparent

Supplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently,

Supporting Information

Hyeyoung Shin a, Tod A. Pascal ab, William A. Goddard III abc*, and Hyungjun Kim a* Korea

REDUCED GRAPHITE OXIDE-INDIUM TIN OXIDE COMPOSITES FOR TRANSPARENT ELECTRODE USING SOLUTION PROCESS

Supporting Information

High-Performance Si Anodes with Highly Conductive and. Thermally Stable Titanium Silicide Coating Layer

Supplementary Information for Topological phase transition and quantum spin Hall edge states of antimony few layers

Effect of lithium-trapping on nitrogen-doped graphene as. an anchoring material for lithium-sulfur batteries: A. theoretical study

Journal Name. Supporting Information. Significant enhancement in blue emission and electrical conductivity of N-doped graphene. Dynamic Article Links

Engineering Carbon Nanostructures and Architectures for High Performance and Multifunctional Electrodes

Please do not adjust margins. New Approach for the Reduction of Graphene Oxide with Triphenylphosphine Dihalide

A. Optimizing the growth conditions of large-scale graphene films

Ultrasonic Anisotropic Conductive Films (ACFs) Bonding of Flexible Substrates on Organic Rigid Boards at Room Temperature

Large Scale Direct Synthesis of Graphene on Sapphire and Transfer-free Device Fabrication

Rational design of oxide/carbon composite to achieve superior rate-capability via enhanced lithium-ion transport across carbon to oxide

Overview. Carbon in all its forms. Background & Discovery Fabrication. Important properties. Summary & References. Overview of current research

Supplementary Information

Supporting Information for

Ferroelectric Zinc Oxide Nanowire Embedded Flexible. Sensor for Motion and Temperature Sensing

Direct-writing on monolayer GO with Pt-free AFM tips in the

Supplementary Figure S1. AFM image and height profile of GO. (a) AFM image

The Effect of Discharge Characteristics on Dielectric Barrier Discharges According to the Relative Permittivity

Supporting information. Uniform Graphene Quantum Dots Patterned from Selfassembled

Department of Chemistry, NanoCarbon Center, Houston, Texas 77005, United States, University of Central Florida, Research Parkway,

Fabrication of a One-dimensional Tube-in-tube Polypyrrole/Tin oxide Structure for Highly Sensitive DMMP Sensor Applications

Supporting Information for

Supporting Information

Instabilities in Thin Polymer Films: From Pattern Formation to Rupture

Chemical Vapor Deposition Graphene Grown on Peeled- Off Epitaxial Cu(111) Foil: A Simple Approach to Improved Properties

Soft Nanocomposite Based Multi-point, Multidirectional Strain Mapping Sensor Using Anisotropic Electrical Impedance Tomography

Supporting Information

Supplementary Information

Plasma-functionalized carbon-layered separators for improved performance of

6.5 mm. ε = 1%, r = 9.4 mm. ε = 3%, r = 3.1 mm

ALL-POLYMER FET BASED ON SIMPLE PHOTOLITHOGRAPHIC MICRO-PATTERNING OF ELECTRICALLY CONDUCTING POLYMER

Deformability-Selective Particle Entrainment and Separation in a Rectangular Microchannel Using Medium Viscoelasticity

Supplementary Figure 1. A photographic image of directionally grown perovskite films on a glass substrate (size: cm).

Reduction of Power Consumption of Counter Electrode Structure in AC-PDP

Dry Plasma Reduction to Supported Platinum Nanoparticles for Flexible Dye-sensitized. Solar Cells. Yuseong-Gu, Daejeon , Korea

for Magnesium-Ion Batteries

Supplementary Information for

SUPPLEMENTARY INFORMATION

Electronic Supplementary Information. Molecular Antenna Tailored Organic Thin-film Transistor for. Sensing Application

SUPPLEMENTARY INFORMATION

Supplementary information

Surface Plasmon-Induced Hot Carrier Effect on Catalytic Activity of CO oxidation on Cu 2 O/Hexoctahedral Au Inverse Catalyst

Atmospheric pressure Plasma Enhanced CVD for large area deposition of TiO 2-x electron transport layers for PV. Heather M. Yates

Supporting information

Multidimensional Thin Film Hybrid Electrodes. Hydrogen Evolution Reaction

Physics of Organic Semiconductor Devices: Materials, Fundamentals, Technologies and Applications

Supporting Information

Characterization of partially reduced graphene oxide as room

School of Chemical and Biological Engineering, College of Engineering, Seoul National University, 599 Gwanangno, Gwanakgu, Seoul , Korea ACS

Supplementary table I. Table of contact angles of the different solutions on the surfaces used here. Supplementary Notes

Carbon based Nanoscale Electronics

Wafer-Scale Single-Domain-Like Graphene by. Defect-Selective Atomic Layer Deposition of

Supporting Information. Fully Solution-Processed Semitransparent Organic Solar Cells with a Silver Nanowire Cathode and a Conducting Polymer Anode

Innovative Nanosensor for Disease Diagnosis

Role of Deoxy Group on the High Concentration of Graphene in Surfactant / Water Media

TOF-SIMS study on nano size conducting polymer prepared by simple atmospheric pressure plasma polymerization technique for display applications

Supplementary Information. Light Manipulation for Organic Optoelectronics Using Bio-inspired Moth's Eye. Nanostructures

Electronic Supplementary Information

High Performance, Low Operating Voltage n-type Organic Field Effect Transistor Based on Inorganic-Organic Bilayer Dielectric System

Selective Manipulation of Molecules by Electrostatic Force and Detection of Single Molecules in Aqueous Solution

SUPPLEMENTARY INFORMATION

Supplementary information

A Low-Noise Solid-State Nanopore Platform Based on a Highly Insulating Substrate

Supporting Information Available:

Supporting Information. Golf ball-shaped PLGA microparticles with internal pores fabricated by simple O/W emulsion

Energy Materials and Surface Sciences Unit (EMSS), Okinawa Institute of Science and

Scalable Holey Graphene Synthesis and Dense Electrode Fabrication Toward High Performance Ultracapacitors

Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application

Functionalization of reduced graphene oxides by redox-active ionic liquids for energy storage

A Scalable Synthesis of Few-layer MoS2. Incorporated into Hierarchical Porous Carbon. Nanosheets for High-performance Li and Na Ion

Transcription:

Supplementary Information for Self-assembled and intercalated film of reduced graphene oxide for a novel vacuum pressure sensor Sung Il Ahn *, Jura Jung, Yongwoo Kim, Yujin Lee, Kukjoo Kim, Seong Eui Lee 3*, Sungyun Kim 4*, and Kyeong-Keun Choi 5 Department of Engineering in Energy and Applied Chemistry Silla University, Busan 67-736 (Republic of Korea) Department of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST), 9 Daehak-ro, Yuseong-gu, Daejeon 35-7 (Republic of Korea) 3 Advanced Materials Engineering Korea Polytechnic University, Jungwang dong Shihung 49-793 (Republic of Korea) 4 Institute of NT.IT fusion technology, Ajou university, Worldcup ro 6, Youngtong gu Suwon 6499 (Republic of Korea) 5 National Center for Nanomaterials Technology (NCNT) San 3, Hyoja-Dong, Nam-Gu, Pohang 79-784 (Republic of Korea).

. Sheet resistance of spin-coated i-rg versus vacuum pressure a. b. c. 94 59 83 47 7 39 9 5 79 45 6 37 i-rg.5.5.5 86 43 75 43 5 35 n-rg 8 35... 8 6 38 35 7 4... d. e. f. 7 5 36 34 4 33... Temp. ( C) 3 n-rg Fitting Eq. R = 63P 98P +4 i-rg Fitting Eq. R = 986P - 35.4P +867.5 3.5 3 5 R = -77.8ln(P) + 4 R = -34.7ln(P) + 77 4 3 3 R = -554.3ln(P) + 34947 R = -9.4ln(P) + 469 5 R = -656.ln(P) + 3943 R = -39.4ln(P) + 94 9... 9 8... R = -555.7ln(P) + 3934 R = -5.7ln(P) + 499 Figure S. Sheet resistance of spin-coated i-rg (with a PVA/G weight ratio of ) and normal RG (n-rg) as pressure is elevated from 3 torr to ambient air pressure; (a) 3 C, (b) 5 C, (c) C, (d) 5 C, and (e) C. (f) A table of fitting equations used to calculate errors in the pressure readings below torr. Insets are enlarged graphs with fitting curves plotted on a linear scale. The sheet resistances were measured at.67 s intervals as a function of increasing pressure in a vacuum under a constant leakage of approximately 3 3 torr/min.

i-rg n-rg Sensitivity (%) Max. Error (%). Sensitivity and reproducibility of pressure reading from spin-coated i-rg a. b. 3 i-rg n-rg 8 6 7 ~ 5 3 torr 4 7 Time (s) s Air pressure 3 5 5 Temperature ( C) 56 565 57 575 58 3 4 Time (min) Figure S. Sensitivity, maximum error, and reproducibility of pressure readings between. and torr; (a) Sensitivities of RG samples and maximum errors at measurement temperature from 3 to C, (b) Repeated measurement of sheet resistance in spin-coated i-rg at C in the vacuum range between ~ 5 3 and ambient air pressure. Note that the percentage error was calculated as ΔR / R fitting (where ΔR = R real R fitting at a given pressure). 3

3. Theoretical description of resistance behavior in spin-coated i-rg versus vacuum pressures a. b. c. 87 54 86 85 84 83..4 47 4 33 6.5.5.5.5.5.5.5 8 78 75 7.5 d. e. f. 6 45 3 5.5.5.5.5.5.5.5 65 6 55 5 45.5 T ( ) a b 3 834.4 9. 5 777.7 33.8 4666.7 68.79 5 896. 865.7 338.8 8.6.5.5.5 Figure S3. Theoretically calculated standard deviations of the z axis ( ) and resistance of the spin-coated i-rg film as the pressure is increased from 3 to torr; (a) at 3 C, (b) at 5 C, (c) at C, (d) at 5 C, and (e) at C. (f) Table of fitting parameters used for equation () (R= a + b ). Note that the calculated resistances are compared with the experimental data in Figure S. The suggested hypothesis of LVW interaction is theoretically examined in the low pressure regime, with the assumptions that the parallel horizontal layers of hexagonal graphene lattice have a side length of.4 Å connected vertically by polymer pillars of 5 nm radius and the distance between two layers is 6.8 Å. For a pressure of torr and a temperature of 3 K, the number density of air molecules is quite small, about one per 3 nm side cube. Therefore, the pressure equilibrium condition of the graphene sheets seem to play a role in resistance changes at low pressure, rather than the direct action of air molecules inside graphene. In this regime the pres- 4

sure on each atom (~.89 8 J) is small compared with the effects, for example, thermal energy (~ 4.4 J) and VDW minimum energy (~ 3.86 J). Hence, the manifested pressure effect is likely to be a macroscopic effect. For the theoretical calculation, one graphene layer between parallel layers is considered, with the normal direction of the layer along the Z axis, and the average position of the layer in this axis is Z. Supposing that the distances between upper and lower layers are the same, the Z value becomes zero. In smaller length scale (horizontal layer diameter ~5 nm) Z can fluctuate by a few Å since, locally, the layer can be attracted to lower or upper layers by van der Waals attraction. At a larger scale (horizontal layer diameter ~ μm) local parts of the layers can be randomly attracted to the upper or lower layers. If the deformation is symmetric about the Z direction, we can assume that Z = is the average equilibrium position of the layer. The potential energy of the layer along the Z plane can become complex, depending on the size of the layer. In the regime where pressure differences cause a visible change, one can assume that the average position of layer Z changes by ΔZ, since the layer has higher energy by Δ Δ (P is pressure and A is the area of the layer). The probability density also changes by a factor Δ. The resistance is related to mobilities of the charge carriers. When Z has an appreciable standard deviation, the carriers should travel a longer path with potential barriers. We assume that the resistance has a linear relation with the standard deviation of Z. Since the average of Z is, the standard deviation of Z is just. Using the above partition function factor, the following equation can be obtained: () 5

With the given experimental data in Figure and a suitable value for A, the (P vs ) graph correlates with the (P vs R) graph assuming: () (a and b in equation () are T and A dependent) Figure S3 shows (P vs R) and (P vs ) graphs in comparison with the experimental data in Figure S. A is set as 5.5 m, which corresponds to a square with a side length of.9 μm. The fitting parameters are a, b, and in units of Å. As seen in Figure 6, the theoretical description with A is consistent matches with the experimental data. 6

Transmittance (%) HC H H HC H H H H HC H H H H HC H H CH H CH CH H HC H H CH H H HC H CH H H CH CH CH H H H CH CH CH CH Intensity (a. u.) 4. A schematic of reaction-based self-assembly for the preparation of i-rg a. H i-rg Fabric to remove water (5 o C) Hot plate (75 o C) Fabric to remove water (5 o C) Hot plate (75 o C) Fabric to remove water (5 o C) Hot plate (75 o C) PVA H H H H PVA RG n G + NH NH Δ i-rg b. 9 8 7 Ref. P P P3 G c. 8 6 4 C-C 6 5 C-N C- C=C() 4 3 4 Wavenumber (cm - ) 75 8 85 9 95 Binding Energy (ev) Figure S4. (a) A schematic of reaction-based self-assembly of i-rg, (b) FT-IR spectra of the samples after heat-treatment at C for min, (c) XPS spectrum of sample Ref. RG formed by the RSA method. 7

.6 mm 5. A test device using patterned IT electrodes a. b. Four point probe Glass substrate Electrode 6 4 i-rg % error 4 3 i-rg.5.6 mm 9.. Figure S5. Properties of a pressure sensor using IT electrodes; (a) A diagram of the test device structure and a microscope image of the active area, (b) Results of sheet resistance measurements in the device with increasing pressure. 8

Sensitivity ( -5 torr - ) 6. Sheet resistance of RSA i-rg at high vacuum pressures a. b. 9 ~ 76 torr (RP on) 88 8 6 86 ~ -3 torr (TMP on) 4 84 ~ -6 torr 8 6 8 4 3 Time (min).5.5.75 PVA/G ratio Figure S6. (a) Sheet resistance of RSA i-rg (P3) with increasing vacuum pressure from ambient air pressure to approximately -6 torr at C (RP and TMP indicate the rotary and turbo molecular pumps, respectively), (b) Sensitivity of pressure readings within the pressure range used in (a). Note that the sensitivity is calculated as ΔR/R max P. Here, P = P max P min and ΔR = R max R min, where R max and R min are the maximum and minimum sheet resistance, respectively, in the pressure range between -6 and 76 torr. 9