DISCRETE SEMICONDUCTORS DATA SHEET BFG4 File under Discrete Semiconductors, SC4 September 99
BFG4 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT, CT, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. The transistors are mounted in a plastic SOT3 envelope. PINNING PIN DESCRIPTION emitter base 3 emitter 4 collector page 4 3 Top view MSB - Fig. SOT3. September 99
BFG4 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage open emitter V V CES collector-emitter voltage R BE = V I C DC collector current ma P tot total power dissipation up to T s = 4 C; note 6 mw h FE DC current gain I C = 4 ma; V CE =8 V; T j = C 6 C re feedback capacitance I C = ; V CB = 8 V; f = MHz.7 pf f T transition frequency I C = 4 ma; V CE = 8 V; f = GHz; 9 GHz T amb = C G UM maximum unilateral power gain I C = 4 ma; V CE = 8 V; f = 9 MHz; db T amb = C I C = 4 ma; V CE = 8 V; f = GHz; 9 db T amb = C S insertion power gain I C = 4 ma; V CE = 8 V; f = 9 MHz; 3 4 db T amb = C F noise figure Γ s = Γ opt ; I C = ma; V CE =8 V; f = 9 MHz; T amb = C.3.8 db P L output power at db gain compression I C = 4 ma; V CE = 8 V; R L =Ω; f = 9 MHz; T amb = C ITO third order intercept point I C = 4 ma; V CE = 8 V; R L =Ω; f = 9 MHz; T amb = C dbm 34 dbm LIMITING VALUES In accordance with the Absolute Maximum System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CES collector-emitter voltage R BE = V V EBO emitter-base voltage open collector. V I C DC collector current ma P tot total power dissipation up to T s = 4 C; note 6 mw T stg storage temperature 6 C T j junction temperature 7 C THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE thermal resistance from junction to up to T s = 4 C; note K/W soldering point R th j-s Note. T s is the temperature at the soldering point of the collector tab. September 99 3
BFG4 CHARACTERISTICS T j = C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-off current I E = ; V CB =8 V na h FE DC current gain I C = 4 ma; V CE = 8 V 6 C e emitter capacitance I C =i c = ; V EB =. V; f = MHz pf C c collector capacitance I E =i e = ; V CB = 8 V; f = MHz pf C re feedback capacitance I C = ; V CB = 8 V; f = MHz.7 pf f T transition frequency I C = 4 ma; V CE = 8 V; f = GHz; T amb = C 9 GHz G UM maximum unilateral power gain (note ) Notes. G UM is the maximum unilateral power gain, assuming S is zero and. I C = 4 ma; V CE = 8 V; R L =Ω; f = 9 MHz; T amb = C; f p = 9 MHz; f q = 9 MHz; measured at f (p q) = 898 MHz and at f (p q) = 94 MHz. I C = 4 ma; V CE = 8 V; f = 9 MHz; T amb = C I C = 4 ma; V CE = 8 V; f = GHz; T amb = C S insertion power gain I c = 4 ma; V CE = 8 V; f = 9 MHz; T amb = C F noise figure Γ s = Γ opt ; I C = ma; V CE =8 V; f = 9 MHz; T amb = C Γ s = Γ opt ; I C = 4 ma; V CE =8 V; f = 9 MHz; T amb = C Γ s = Γ opt ; I C = ma; V CE =8 V; f = GHz; T amb = C P L output power at db gain compression I c = 4 ma; V CE = 8 V; R L =Ω; f = 9 MHz; T amb = C db 9 db 3 4 db.3.8 db.9.4 db. db dbm ITO third order intercept point note 34 dbm V o output voltage note 3 mv d second order intermodulation distortion note 4 db G UM S = log ------------------------------------------------------------- db. S S 3. d im = 6 db (DIN 44B); I C = 4 ma; V CE = 8 V; Z L =Z s =7Ω; T amb = C; V p =V o ;V q =V o 6 db; V r =V o 6 db; f p = 79. MHz; f q = 83. MHz; f r = 8. MHz; measured at f (p+q r) = 793. MHz 4. I C = 4 ma; V CE = 8 V; V o = 3 mv; T amb = C; f p = MHz; f q = 6 MHz; measured at f (p+q) = 8 MHz September 99 4
BFG4 P tot (mw) 8 MRA64 - h FE MRA6 6 4 T ( o s C) IC (ma) V CE V. V CE = 8 V; T j = C. Fig. Power derating curve. Fig.3 DC current gain as a function of collector current.. C re (pf).8 MRA66 f T (GHz) V CE = 8 V MRA67.6 8 4 V.4 4. 4 8 V CB (V) I C (ma) I C = ; f = MHz. f = GHz; T amb = C. Fig.4 Feedback capacitance as a function of collector-base voltage. Fig. Transition frequency as a function of collector current. September 99
BFG4 In Figs 6 to 9, G UM = maximum power gain; MSG = maximum stable gain; G max = maximum available gain. gain MRA68 gain MRA69 MSG G max G UM G max G UM 4 6 IC (ma) 8 4 6 IC (ma) 8 V CE = 8 V; f = 9 MHz. V CE = 8 V; f = GHz. Fig.6 Gain as a function of collector current. Fig.7 Gain as a function of collector current. gain 4 MRA66 gain 4 MRA66 G UM 3 MSG G UM 3 MSG G max G max 3 4 f (MHz) 3 4 f (MHz) I C = ma; V CE = 8 V. I C = 4 ma; V CE = 8 V. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. September 99 6
BFG4 d im 3 MEA977 d 3 MEA976 4 4 6 6 7 3 4 6 I (ma) C 7 3 4 6 I (ma) C Fig. Intermodulation distortion as a function of collector current. Fig. Second order intermodulation distortion as a function of collector current. F min 4 MRA666 f = 9 MHz MHz G ass I F C = ma min 4 4 ma G ass MRA667 G ass 3 G ass 3 MHz MHz MHz 9 MHz MHz F min 4 ma ma F min I C (ma) 3 f (MHz) 4 V CE = 8 V. V CE = 8 V. Fig. Minimum noise figure and associated available gain as functions of collector current. Fig.3 Minimum noise figure and associated available gain as functions of frequency. September 99 7
BFG4 handbook, full pagewidth 9. 3. 4.8.6 G = 3 db. G = 4 db F min =.3 db G = db Γ OPT Γ. MS. 8 G max =.3 db F =. db.4.. F = db F = 3 db 3. 4 I C = ma; V CE = 8 V; Z o =Ω; f = 9 MHz. 9 Fig.4 Noise circle figure. MRA668. handbook, full pagewidth 9. 3.. G = 7 db Γ MS G = 8 db G = 6 db G max = 8. db 4.8.6.4. 8.. Γ OPT. F min =. db F =. db F = 3 db 3. F = 4 db 4 I C = ma; V CE = 8 V; Z o =Ω; f = GHz. 9 Fig. Noise circle figure. MRA669. September 99 8
BFG4 handbook, full pagewidth 9. 3. 4.8 3 GHz.6..4. 8... 4 MHz I C = 4 ma; V CE = 8 V. Z o =Ω.. 3 4 MRA66 9 Fig.6 Common emitter input reflection coefficient (S ).. handbook, full pagewidth 9 3 4 4 MHz 8 4 3 3 GHz 3 4 9 MRA663 I C = 4 ma; V CE = 8 V. Fig.7 Common emitter forward transmission coefficient (S ). September 99 9
BFG4 handbook, full pagewidth 9 3 4 3 GHz..4.3 8.. 4 MHz 3 4 I C = 4 ma; V CE = 8 V. 9 MRA664 Fig.8 Common emitter reverse transmission coefficient (S ). handbook, full pagewidth 9. 3. 4.8.6..4 3 GHz. 8... 4 MHz I C = 4 ma; V CE = 8 V. Z o =Ω.. 3 4 MRA66 9 Fig.9 Common emitter output reflection coefficient (S ).. September 99
BFG4 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT3 D B E A X c y H E v M A b 4 Q A A 3 L p e b p w M B detail X e 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A b p b c D E e e H E L p Q v w y mm.8....8.6 3..9.3. 6.7 6.3 3.7 3.3 4.6.3 7.3 6.7..7.9.8... OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT3 96-- 97--8 September 99
BFG4 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 99