2N2904A-2N2905A 2N2906A-2N2907A GENERAL PURPOSE AMPLIFIERS AND SITCHES DESCRIPTION The 2N2904A, 2N2905A, 2N2906A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904A and 2N2905A) and in Jedec TO-18 (for 2N2906A and 2N2907A) metal cases. They are designed for high-speed saturated switching and general purpose applications. 2N2904A/2N2905A approved to CECC 50002-100, 2N2906A/2N2907A approved to CECC 50002-103 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter alue Unit CBO Collector-base oltage (I E =0) 60 CEO Collector-emitter oltage (I B =0) 60 EBO Emitter-base oltage (I C =0) 5 I C Collector Current 600 ma P tot Total Power Dissipation at T amb 25 C for 2N2904A and 2N2905A for 2N2906A and 2N2907A at T case 25 C for 2N2904A and 2N2905A for 2N2906A and 2N2907A T stg,t j Storage and Junction Temperature 65 to 200 C 0.6 0.4 3 1.8 January 1989 1/7
THERMAL DATA 2N2904A 2N2905A 2N2906A 2N2907A R th j-case R th j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 58.3 C/ 292 C/ 97.3 C/ 437.5 C/ ELECTRICAL CHARACTERISTICS (T amb =25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO I CEX I BEX (BR) CBO (BR) CEO * (BR) EBO CE (s at ) * B E (s at ) * Collector Cutoff Current (I E =0) Collector Cutoff Current ( BE = 0.5 ) Base Cutoff Current ( BE = 0.5 ) Collector-base Breakdown oltage (I E =0) Collector-emitter Breakdown oltage (I B =0) Emitter-base Breakdown oltage (I C =0) Collector-emitter Saturation oltage Base-emitter Saturation oltage CB = 50 CB = 50 T amb =150 C 10 10 CE = 30 50 na CE = 30 50 na I C = 10µA 60 I C = 10mA 60 I E = 10µA 5 I C = 150 ma I C = 500 ma I C = 150 ma I C = 500 ma I B = 15mA I B = 50mA I B = 16mA I B = 50mA h FE * DC Current Gain for 2N2904A I C = 0.1 ma I C = 1mA I C = 10mA I C = 150 ma I C = 500 ma and 2N2906A h FE * DC Current Gain for 2N2905A and 2N2907A I C = 0.1 ma I C = 1mA I C = 10mA I C = 150 ma I C = 500 ma f T Transition Frequency I C = 50mA f = 100 MHz C EBO Emitter-base Capacitance I C =0 f = 1 MHz C CBO Collector-base Capacitance I E =0 f = 1 MHz 75 100 100 100 50 0.4 1.6 1.3 2.6 120 300 na µa CE = 20 200 MHz EB = 2 30 pf CB = 10 8 pf t d ** Delay Time I C = 150 ma I B1 = 15 ma CC = 30 10 ns t r ** Rise Time I C = 150 ma I B1 = 15 ma CC = 30 ns t s ** Storage Time I C = 150 ma CC = 6 I B1 = I B2 = 15mA 80 ns * Pulsed : pulse duration = 300 µs, duty cycle = 1.5 %. ** See test circuit. 2/7
ELECTRICAL CHARACTERISTICS(continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit t f ** Fall Time I C = 150 ma CC = 6 30 ns I B1 = I B2 = 15 ma t on ** Turn-on Time I C = 150 ma I B1 = 15mA CC = 30 45 ns t off ** Turn-off Time I C = 150 ma CC = 6 100 ns I B1 = I B2 = 15 ma * Pulsed : pulse duration = 300 µs, duty cycle = 1.5 %. ** see test circuit. Normalized DC Current Gain. Collector-emitter Saturation oltage. Collector-base and Emitter-base capacitances. Switching Characteristics. 3/7
Test Circuit for t on,t r,t d. PULSE GENERATOR : TO OSCILLOSCOPE : t r 2.0 ms t r < 5.0 ns Frequency = 150 Hz ZIN > 10MΩ Z o =50 Ω Test Circuit for t off,t o,t f. PULSE GENERATOR : TO OSCILLOSCOPE : t r 2.0 ns t r < 5.0 ns Frequency = 150 Hz ZIN > 100 MΩ Z o = 50 Ω 4/7
TO-18 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 12.7 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45 o 45 o G D A H I F E L B C 0016043 5/7
TO39 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 12.7 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 L 45 o (typ.) G D A H I F E L B P008B 6/7
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