Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Two (galvanic) internal isolated Transistor in one package For orientation in reel see package information below Pbfree (RoHS compliant) and halogenfree package with visible leads Qualification report according to AECQ available 5 4 6 3 C E B 6 5 4 TR TR B E 3 C EHA0796 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFS483 RHs =B =E 3=C 4=B 5=E 6=C SOT363 03075
Maximum Ratings at T A = 5 C, unless otherwise specified Parameter Symbol Value Unit Collectoremitter voltage V CEO V Collectoremitter voltage V CES 0 Collectorbase voltage V CBO 0 Emitterbase voltage V EBO Collector current I C 65 ma Base current I B 5 Total power dissipation ) P tot 450 mw T S 40 C Junction temperature T J 50 C Ambient temperature T A 65... 50 Storage temperature T Stg 65... 50 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 45 K/W Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V I C = ma, I B = 0 Collectoremitter cutoff current I CES 0 µa V CE = 0 V, V BE = 0 Collectorbase cutoff current I CBO 0 na V CB = V, I E = 0 Emitterbase cutoff current I EBO µa V EB = V, I C = 0 DC current gain I C = 5 ma, V CE = 8 V, pulse measured h FE 70 0 40 T S is measured on the collector lead at the soldering point to the pcb For the definition of R thjs please refer to Application Note AN077 (Thermal Resistance Calculation) 03075
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency I C = 5 ma, V CE = 8 V, f = 500 MHz f T 6 8 GHz Collectorbase capacitance V CB = V, f = MHz, V BE = 0, emitter grounded Collector emitter capacitance V CE = V, f = MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = MHz, V CB = 0, collector grounded C cb 0.34 0.54 pf C ce 0.3 C eb. Minimum noise figure NF min db I C = 5 ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz 0.9 I C = 5 ma, V CE = 8 V, Z S = Z Sopt, f =.8 GHz.4 Power gain, maximum stable ) I C = 5 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz Power gain, maximum available ) I C = 5 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f =.8 GHz G ms 9 db G ma.5 db Transducer gain S e db I C = 5 ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 900 MHz 5.5 I C = 5 ma, V CE = 8 V, Z S = Z L = 50 Ω, f =.8 MHz G ms = S / S G ma = S e / S e (k(k²) / ) 3 03075
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 500 3 mw 400 K/W Ptot 350 300 RthJS 50 00 50 0 50 0.5 0. 0. 0.05 0. 0. 0.005 D = 0 0 0 0 40 60 80 0 0 C 50 T S 7 6 5 4 3 s 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D = 0 0.005 0.0 0.0 0.05 0. 0. 0.5 0 7 6 5 4 3 s 0 t p 4 03075
Package SOT363 BFS483 5 03075
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