Flavien Heu+er Sales & Applica+ons Engineer EFCC 2015

Similar documents
Miniature Electronically Trimmable Capacitor V DD. Maxim Integrated Products 1

DVSA2800D Series HIGH RELIABILITY HYBRID DC-DC CONVERTERS DESCRIPTION FEATURES

Nominal Frequency MHz

74HC1GU04GV. 1. General description. 2. Features. 3. Ordering information. Marking. 5. Functional diagram. Inverter

CERAMIC CHIP CAPACITORS

DATA SHEET. PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

PI3B V, Dual 4:1 Mux/DeMux NanoSwitch

AC Circuits Homework Set

Electrolytic Capacitor Age Estimation Using PRBS-based Techniques

ORGANIZATION AND APPLICATION The MUX8523 consists of two independent 16 channel multiplexers arranged as shown in the block diagram.

APPLICATION NOTES FOR MULTILAYER CERAMIC CAPACITORS

Super High AUTO (SHA) Series

DATA SHEET. BYD63 Ripple blocking diode DISCRETE SEMICONDUCTORS Jun 10

ORGANIZATION AND APPLICATION The MUX8532 consists of two independent 16 channel multiplexers arranged as shown in the block diagram.

ATC 700 B Series NPO Porcelain and Ceramic Multilayer Capacitors

Piezoelectric Resonators ME 2082

SCB10H Series Pressure Elements PRODUCT FAMILY SPEFICIFATION. Doc. No B


5 V 64K X 16 CMOS SRAM

SGM7SZ00 Small Logic Two-Input NAND Gate

No Item Code Description Series Reference. Thickness. M B min (mm) T (mm) code. See Thickness Specification Reference Table below

TRM Professional Multianode

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

Alternating Current Circuits. Home Work Solutions

DATA SHEET. BYD11 series Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Sep 26

Specifications. Customer Part Number - Customer Specification Number -

5-V Low Drop Fixed Voltage Regulator TLE 4275

Metallized Polypropylene Film Capacitor Related Document: IEC

ATC 200 A Series BX Ceramic Multilayer Capacitors

SGM7SZ32 Small Logic Two-Input OR Gate

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET

Datasheet. Standard Products ACT Channel Analog Multiplexer Module Radiation Tolerant & ESD Protected

AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HAH1BVW S/08

General Purpose Transistors

Features MIC4468 V S GND. Micrel, Inc Fortune Drive San Jose, CA USA tel + 1 (408) fax + 1 (408)

PRODUCTION DATA SHEET

Surface Mount Multilayer Ceramic Chip Capacitors for High Q Commodity Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F

Data Sheet CAPACITIVE ABSOLUTE 1.2 BAR SCB10H-B012FB PRESSURE SENSOR ELEMENT. Features. Applications. General Description

Capacitor Technology and Manufacturing Expertise

Standard Products ACT Channel Analog Multiplexer Module Radiation Tolerant & ESD Protected

MULTILAYER CERAMIC CAPACITORS

Open-mode Design Capacitors

Practical Aspects of MIL-DTL Appendix A Initiator Testing. Barry Neyer NDIA Fuze Conference May 14 th 2008

SPECIFICATION FOR APPROVAL

Standard Products ACT Channel Analog Multiplexer Module Radiation Tolerant & ESD Protected

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET

Quartz Crystal Oscillators and Phase Locked Loops. Dominik Schneuwly Yves Schwab

Monolithic N-Channel JFET Dual

Matched N-Channel JFET Pairs

LM34 Precision Fahrenheit Temperature Sensors

NC7SZ374 TinyLogic UHS D-Type Flip-Flop with 3-STATE Output

S-882Z Series ULTRA-LOW VOLTAGE OPERATION CHARGE PUMP IC FOR STEP-UP DC-DC CONVERTER STARTUP. Rev.1.2_00. Features. Applications.

AN6783S. IC for long interval timer. ICs for Timer. Overview. Features. Applications. Block Diagram

RT9166/A. 300/600mA, Ultra-Fast Transient Response LDO Regulator. General Description. Features. Applications. Ordering Information

April 2004 AS7C3256A

9A HIGH-SPEED MOSFET DRIVERS

Silicon Capacitive Accelerometers. Ulf Meriheinä M.Sc. (Eng.) Business Development Manager VTI TECHNOLOGIES

DATA SHEET. BAV100 to BAV103 General purpose diodes DISCRETE SEMICONDUCTORS Sep 17. Product specification Supersedes data of April 1996

PT5108. High-PSRR 500mA LDO GENERAL DESCRIPTION FEATURES APPLICATIONS TYPICAL APPLICATIONS. Ripple Rejection vs Frequency. Ripple Rejection (db)

AVAILABLE OPTIONS PACKAGED DEVICES CHIP CARRIER (FK) CERAMIC DIP (JG) TL7702ACD TL7715ACD TL7702ACP TL7715ACP TL7702ACY TL7715ACY

GM4275 GM4275 V2.03. Features. Description. Applications. Block Diagram WIDE INPUT RANGE 5V LOW DROPOUT REGULATOR WITH RESET FLAG

Charge Pump. Loop Filter. VCO Divider

P4C164 ULTRA HIGH SPEED 8K X 8 STATIC CMOS RAMS FEATURES DESCRIPTION. Full CMOS, 6T Cell. Common Data I/O

Multi Layer Ceramic Capacitor

RP mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator. General Description. Features. Applications. Ordering Information. Marking Information

RF (Radio Frequency) C R 20 Type

DATA SHEET. BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules DISCRETE SEMICONDUCTORS May 13

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU. Characteristic Symbol Test Condition Min Typ. Max Unit

Matched N-Channel JFET Pairs

DISCRETE SEMICONDUCTORS DATA SHEET. BLY87C VHF power transistor

Distributing Tomorrow s Technologies For Today s Designs Toll-Free:

DATA SHEET. BYD31 series Fast soft-recovery controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Sep 18

Solid Tantalum SMD Capacitors TANTAMOUNT, Hi-Rel COTS, Low ESR, Metal Case

Monolithic N-Channel JFET Dual

Chip tantalum capacitors (Fail-safe open structure type)

Metallized Polypropylene Film Capacitor Related Document: IEC

Maintenance/ Discontinued

SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal

16-Mbit (1M x 16) Static RAM

Chip tantalum capacitors (Fail-safe open structure type)

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103

DC/DC regulator Input V Output up to 16 A

RS INDUSTRY LIMITED. RS Chip Array ESD Suppressor APPROVAL SHEET. Customer Information. Part No. : Model No. : COMPANY PURCHASE R&D

Four-Channel Thermistor Temperature-to-Pulse- Width Converter

3.3 V 256 K 16 CMOS SRAM

2-input AND gate with open-drain output. The 74AHC1G09 is a high-speed Si-gate CMOS device.

Tel: Fax: PRODUCT INFORMATION

The Basic Capacitor. Dielectric. Conductors


XC7SET General description. 2. Features. 3. Applications. Ordering information. Inverting Schmitt trigger

RT9184A. Dual, Ultra-Fast Transient Response, 500mA LDO Regulator. General Description. Features. Pin Configuration. Applications

PI3B V, Dual 4:1 Mux/DeMux NanoSwitch

5V/400mA Low Drop Voltage ILE4275 TECHNICAL DATA

LM50 SOT-23 Single-Supply Centigrade Temperature Sensor

Datasheet. Standard Products ACT Channel Analog Multiplexer Module Radiation Tolerant

Monolithic N-Channel JFET Duals

DC/DC converter Input 9-36 and Vdc Output up to 0.5A/3W

SGM7SZ08 Small Logic Two-Input AND Gate

ERB Series. High Frequency Ceramic Capacitors. ERB Product Summary

Transcription:

Oscillator design guidelines for implantable medical device applications Flavien Heu+er Sales & Applica+ons Engineer 1 EFCC 2015

Agenda o Introduc/on o Key parameters in specifying quartz crystals o Suggested screenings for quartz crystals 2

3 INTRODUCTION

Evolu/on of the quartz crystals for medical implantable device applica/ons CX1 (8.0 x 3.5mm) CX3 (6.6 x 2.4mm) CX4 (5.0 x 1.5mm) 1973 1983-86 1998 4 First Lithium powered And Non invasive Programmable (Telemetry) pacemaker Pacemaker with Temperature and Motional sensors 3 chamber pacing implemented

Evolu/on of the quartz crystals for medical implantable device applica/ons CX9 (4.1x1.5mm) CX11 (3.2x1.5mm) CX16 (2.0 x 1.2 mm) CX18 (1.55 x 0.95 mm) 2005 2009 2010-2013 5 Medical Implantable Communication Service (MICS) devices Retinal Implants BlueTooth Low Energy (BLE) and new generation of MICS. 1 st Leadless pacemaker

Quartz Crystal theory: Modes of Mo/on Flexure Mode Extensional Mode Face Shear Mode 6 Thickness Shear Mode Fundamental Mode Thickness Shear Third Overtone Thickness Shear

7 Tuning Fork Crystal Flexure mode

8 AT-cut crystal Thickness shear mode

9 Quartz Crystal Construc/on

Agenda o Introduc/on o Key parameters in specifying quartz crystals o Suggested screenings of quartz crystals 10

KEY PARAMETERS IN SPECIFYING QUARTZ CRYSTALS 11

Key parameters in specifying quartz crystals o Load capacitance o Gain o Drive level 12

Key parameters in specifying quartz crystals o Load capacitance o Gain o Drive level 13

Crystal Model and C L Symbol for crystal unit C L Total Reactance = X + X CL = 0 C 0 Static Arm Motional Arm C L 14 C 1 L 1 R 1

F L = F s 1+ Load Capacitance F L at C L C1 2( C + C 0 L ) + Area of usual operation in an oscillator TS = 1 F df L dc L = C 1 2(C 0 + C L ) 2 Reactance 0 Resonance, f r Antiresonance, f a Frequency TS is the Trim Sensi/vity - 15 1 2πfC 0

How to measure C L? 1) Measure the crystal parameters C 1, C 0, and F s with a network or impedance analyzer. 2) Install the measured crystal in the oscillator circuit and measure the oscillation frequency f 3) Then calculate the load capacitance C L. For example with F s = 32.7644 khz C 1 = 2.3 ff C 0 = 1.5 pf f = 32.768 khz we find C L = 9.0 pf. C L = C 1 2 F s C 0 f F s 16

Impact of incorrect C L Considering a 32.768 khz CX11 crystal : C 0 = 1.0 pf, C 1 = 3.5 ff, calibrated for C L1 = 9 pf. Customer circuit at C L2 = 11 pf, what is the change in frequency? 17 29 ppm 1 1 2 0 1 0 2 1 1 2 = + + = C C C C C F F F L L L L

Importance of C L Right choice of C L for proper operating frequency Crystal with small load capacitance starts faster Large load capacitors increase the power consumption 18

Key parameters in specifying quartz crystals o Load capacitance o Gain o Drive level 19

Pierce Oscillator R f Fout Amplifier R A C G Crystal resonator C D C d 20

Gain Formula g m 4π 2 f 2 C G ( C D + C d )R e + (C d + R e C D )R A R O + C G C D (1+ R A R O )+ C d 1 R O 4π 2 f 2 C d C D R A 1+ R A + R e R O 4π 2 f 2 C d C D R A R e L 1 C 1 R 1 Oscillator AC equivalent circuit with the crystal I D electrical equivalent circuit R O X D C 0 = C 0 +C s X G 21

Gain Main part of the Formula g m 4π 2 f 2 C G C D R e + C G C D R O 1+ R e R O R f Fout R e L ' 1 C0 1 ' R + CL C + C = C ' L s 2 Xe Re I R O D ' C C + 0 = 0 C s X D C G X G CX R A C D C d 22 Pierce Oscillator AC Equivalent Circuit (R A omitted)

Compare minimum gain to drive sealed and unsealed 32.768 khz CX11 crystal Sealed Unsealed g m = 4π 2 f 2 C D C G R e + C G /(C D R o )(1+R e /R o ) f Hz C D pf C G pf R 1 Ω R e R1(1+C 0' /C L' ) 2 R e Ω R o MΩ C L =C L' +C s C L pf C s pf C 0' =C 0 +C s C 0 pf g m 1 g m 2 g m g m 1 g m 2 g m g m µs (µmho) 0.61 0.54 1.15 5.46 0.82 6.28 32'768 32'768 20 10 20 10 50'000 445'000 72'359 643'992 1 1 7 7 0.3 0.3 1.06 1.06 23 6.97

Key parameters in specifying quartz crystals o Load capacitance o Max allowed crystal resistance o Drive level 24

Drive Level Defini/on Crystal drive level is a measure of how hard the crystal is being driven. It can be defined as the current passing through the resonator, but is most o_en defined as the power dissipated within the resonator. The maximum allowed drive level is given by the crystal manufacturer and is dependent upon the physical size, geometry, mode, and frequency of the resonator. 25

Max Drive Level for CX11 Tuning Fork CX11 32.768 khz : 0.5 μw max AT-cut CX11 24.0 MHz : 200 μw max 26

Drive-Level Dependency Crystal drive-level dependency (DLD) refers to the dependency of the quartz crystal parameters (frequency and series resistance) to the with current through the crystal. High drive could irreversibly damage a quartz crystal 27

Drive-Level Dependency Resistance R 1 Anomalous starting resistance Normal operating range Drive level effects 28 10-3 10-2 10-1 1 10 100 I X (ma)

Drive-Level Dependency Even with the steps we take to mi/gate this, there can s/ll be some parts that exhibit DLD behavior. We recommend customers requiring some levels of tes/ng to ensure reliable start-up of the oscillator. 29

SUGGESTED SCREENINGS FOR QUARTZ CRYSTALS 30

Suggested Screenings for Quartz Crystals o DLD Testing o Thermal Shock o Hermeticity Testing o PIND Testing 31

DLD Tes/ng 35 Purpose : To remove crystals that might have start-up issues in the oscillator. Method : Measure the crystal from a low drive level to the nominal drive level and back, looking for maximum resistance and changes in frequency and resistance.

Thermal Shock 36 Purpose : To determine Resistance of the component to expose at extreme temperature Per MIL-STD-202, Method 107 Method : Stress the mechanical structure (package and quartz bonding) and check effect on crystal parameters. -55 C to +125 C / 5 cycles

Herme/city Tes/ng Purpose: Determine the effec/veness of seal process detec/ng poten/al herme/city issue through ceramic, preform or seal rim. Fine and Gross Leak Tes/ng : Per MIL-STD-202, Method 112 Method : Parts under high pressure before measuring leakage 37

PIND Tes/ng Purpose : Non-destruc/ve test to detect loose par/culates, if any, inside a component cavity. Method : Detect loose par/culates of sufficient mass acous/cally upon impact with the cavity. Par/cle Impact Noise Detec/on per Mil-STD-883, Method 2020 Condi/on A 38 Need special test environment to reduce ambient and external noises.

Thank you www.statek.com 39