DISCRETE SEMICONDUCTORS DATA SHEET /SL March 1993
/SL DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 9 MHz mobile radio band. FEATURES multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile; gold metallization ensures excellent reliability. The has a -lead stud envelope with a ceramic cap (SOT1A). All leads are isolated from the stud. The /SL is a studless version (SOT1D). QUICK REFERENCE DATA R.F. performance at T h =5 C in a common-emitter class-b circuit. MODE OF OPERATION narrow band; c.w. V CE V f MHz P L W db 1,5 7 5 > 1,5 > 6 1,5 9 typ. 7, typ. 6 η C % PIN CONFIGURATION PINNING - SOT1A; SOT1D PIN DESCRIPTION age 1 3 page 1 3 1 collector emitter 3 base emitter Top view MBK187 MSB55 Fig.1 Simplified outline. SOT1A (). Fig. Simplified outline. SOT1D (/SL). PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. March 1993
/SL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 13) Collector-base voltage (open emitter) V CBO max. 36 V Collector-emitter voltage (open base) V CEO max. 16 V Emitter-base voltage (open collector) V EBO max. 3 V Collector current d.c. or average I C ;I C(AV) max.,8 A peak value; f > 1 MHz I CM max.,5 A D.C. power dissipation up to T mb =5 C P tot (d.c.) max. 1,5 W R.F. power dissipation f > 1 MHz; T mb =5 C P tot (r.f.) max. 19 W Storage temperature T stg 65 to + 15 C Operating junction temperature T j max. C 1 T mb = 5 C MDA37 8 MDA373 I C (A) T h = 7 C P tot (W) III II 1 I 1 1 1 1 1 V CE (V) 6 8 1 T h ( C) R th mb-h =,6 K/W. I Continuous d.c. operation II Continuous r.f. operation (f > 1 MHz). III Short-time r.f. operation during mismatch (f > 1 MHz). Fig.3 D.C. SOAR. Fig. Power/temperature derating curves. THERMAL RESISTANCE (dissipation = 9 W; T mb =5 C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 1 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) = 7,5 K/W From mounting base to heatsink R th mb-h =,6 K/W March 1993 3
/SL CHARACTERISTICS T j =5 C unless otherwise specified Collector-base breakdown voltage open emitter; I C = 1 ma V (BR)CBO > 36 V Collector-emitter breakdown voltage open base; I C = ma V (BR)CEO > 16 V Emitter-base breakdown voltage open collector; I E = 1 ma V (BR)EBO > 3 V Collector cut-off current V BE = ; V CE = 16 V I CES < 5 ma Second breakdown energy; L = 5 mh; f = 5 Hz R BE =1Ω E SBR > 1 mj D.C. current gain () > I C =,6 A; V CE = 1 V h FE typ. 5 1 Transition frequency at f = 5 MHz (1) I C =,6 A; V CE = 1,5 V f T typ., GHz Collector capacitance at f = 1 MHz I E =I e = ; V CB = 1,5 V C c typ. 7,5 pf Feedback capacitance at f = 1 MHz I C = ; V CE = 1,5 V C re typ. 5 pf Collector-stud capacitance C cs typ. 1, pf Notes 1. Measured under pulse conditions: t p = 5 µs; δ<,1.. Measured under pulse conditions: t p = 3 µs; δ<,1. March 1993
/SL 1 h FE MDA37 5 f T (GHz) MDA375 8 3 1.8 1.6. I C (A)..8 1. 1.6 I E (A) Fig.5 V CE = 1 V; T j =5 C; typ. values. Fig.6 V CB = 1,5 V; f = 5 MHz; T j =5 C; typ. values. 16 C c (pf) 1 MDA376 1 1 8 6 8 1 16 V CB (V) Fig.7 I E =i e = ; f = 1 MHz; typ. values. March 1993 5
/SL APPLICATION INFORMATION (part I) R.F. performance in c.w. operation (common-emitter class-b circuit) at f = 7 MHz; T h =5 C. MODE OF OPERATION V CE V narrow band; c.w. 1,5 5 P L W P S W db I C A η C % <,5 > 1,5 <,665 > 6 typ.,3 typ. 1 typ.,6 typ. 66 handbook, full pagewidth 5 Ω C1 C C L1,, C3 L T.U.T. L6 C5 L7 L5 C6 R C7 C8 5 Ω L3 R1 L +V CC MDA365 Fig.8 Class-B test circuit at f = 7 MHz. List of components: C1 =,7 pf multilayer ceramic chip capacitor (1) C = C7 = C8 = 1,-5,5 pf film dielectric trimmer (cat.no. 89 91) C3 = 7,5 pf multilayer ceramic chip capacitor (1) C = -9 pf film dielectric trimmer (cat.no. 89 9) C5 = 1 pf multilayer ceramic chip capacitor (cat. no. 85 1311) C6 = 1 nf metallized film capacitor (cat. no. 35 51) L1 = stripline,,5 mm 6, mm L = 1 turn Cu-wire (1, mm), int. dia. 5,5 mm, leads 5 mm L3 = L = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 31 366) L5 = turns enamelled Cu-wire (1, mm), int. dia. 6 mm, length 7,5 mm, leads 5 mm L6 = stripline, 1, mm 6, mm L7 = 1 turn Cu-wire (1, mm), int. dia. 5 mm, leads 5 mm R1 = R = 1 Ω metal film resistor,,5 W L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (ε r =,7) and a thickness of 1 16 inch. Note 1. American Technical Ceramics capacitor type 1 A or capacitor of same quality. March 1993 6
/SL handbook, full pagewidth 1 mm 58 mm rivets L3 C1 C3 L R1 C L1 L6 L7 C8 L5 C L C7 C6 R C5 +V CC MDA366 The circuits and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper to serve as ground plane. Earth connections are made by hollow rivets. Fig.9 Printed circuit board and component layout for 7 MHz. March 1993 7
/SL 8 P L (W) 6 MDA377 V CE = 1.5 V (db) 16 MDA378 1 η C (%) 8 7.5 V 1 η C η C 6 8..8 1. P S (W) 6 8 P L (W) f = 7 MHz; class-b operation; T h =5 C; typ. values. f = 7 MHz; class-b operation; T h =5 C; typ. values. : V CE = 1,5 V; : V CE = 7,5 V. Fig.1 Output power. Fig.11 Power gain and efficiency; RUGGEDNESS: The device is capable of withstanding a load mismatch with VSWR = 5 (all phases) up to a supply voltage of 15,5 V at rated load power. March 1993 8
/SL Z i (Ω) r i MDA379 1 Z L (Ω) 8 R L MDA38 6 x i X L 8 5 56 f (MHz) 8 5 f (MHz) 56 V CE = 1,5 V; P L = 5 W; T h =5 C; f = -5 MHz; typical values. V CE = 1,5 V; P L = 5 W; T h =5 C; f = -5 MHz; typical values. Fig.1 Input impedance (series components). Fig.13 Load impedance (series components). 15 (db) 1 MDA381 13 1 11 1 8 5 f (MHz) 56 V CE = 1,5 V; P L = 5 W; T h =5 C; f = -5 MHz; typical values. Fig.1 Power gain. March 1993 9
/SL APPLICATION INFORMATION (part II) R.F. performance in c.w. operation (common-emitter class-b circuit) at f = 9 MHz; T h =5 C V MODE OF OPERATION CE P L P S G P I C η C V W W db A % narrow band; c.w. 1,5 typ.,8 typ. 7, typ.,5 typ. 6 handbook, full pagewidth 5 Ω C1 C L1 L L5,,,,,,, C C3 C5 L6 C6 L8 C1 L7 L1 C1 C11 C13 5 Ω C7 L3 R L9 MDA38 R1 L C8 C9 +V CC = 1.5 V Fig.15 Class-B test circuit at f = 9 MHz. March 1993 1
/SL List of components: C1 = C1 = 33 pf multilayer ceramic chip capacitor (1) C = C13 = 1,-5,5 pf film dielectric trimmer (cat. no. 89 91) C3 = C11 = 1,-3,5 pf film dielectric trimmer (cat. no. 89 51) C = C5 = C1 = 6, pf multilayer ceramic chip capacitor (1) C6 = 1 pf multilayer ceramic chip capacitor (1) C7 = 1 pf ceramic feed-through capacitor C8 = 33 pf ceramic feed-through capacitor C9 =, µf tantalum electrolytic capacitor L1 = stripline, 1, mm 1,85 mm L = stripline, 5, mm 1,85 mm L3 = 6 nh, turns enamelled Cu-wire (, mm), close wound, int. dia. 3 mm L = L9 = Ferroxcube wideband h.f. choke, grade 3B (cat. no 31 366) L5 = stripline, 11,3 mm 6, mm L6 = stripline, 1, mm 6, mm L7 = stripline, 15,9 mm 1,85 mm L8 = 8 nh, 15 turns enamelled Cu-wire (, mm), close wound, int. dia. 3 mm L1 = stripline, 8, mm 1,85 mm R1 = R = 1 Ω metal film resistor,,5 W L1, L, L5, L6, L7 and L1 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (ε r =,7) and thickness of 1 3 inch. Note 1. American Technical Ceramics capacitor type 1 A or capacitor of same quality. March 1993 11
/SL handbook, full pagewidth 18.5 mm soldered copperstraps E B C 8 mm E rivets C7 L9 C8 L R1 L8 R V CC C9 L3 C E C1 C1 C C3 C5 B E C C6 C11 C13 C1 MDA383 The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper to serve as a ground plane. Earth connections are made by hollow rivets and also by fixing screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the ground plane. Fig.16 Printed circuit board and component layout for a 9 MHz test circuit. RUGGEDNESS The device is capable of withstanding a load mismatch with VSWR = 5 (all phases) up to a supply voltage of 15,5 V at rated load power. March 1993 1
/SL 5 P L (W) MDA38 1 (db) 8 MDA385 1 η C (%) 8 3 6 6 η C 1..8 1. P S (W) 1.6 1 3 5 P L (W) f = 9 MHz; V CE = 1,5 V; class-b operation; T h =5 C; typ. values. f = 9 MHz; V CE = 1,5 V; class-b operation; T h =5 C; typ. values. Fig.17 Output power. Fig.18 Power gain and efficiency. March 1993 13
/SL 6 MDA386 1 MDA387 Z i (Ω) x i Z L (Ω) R L 1 r i 6 X L 8 8 88 9 96 1 f (MHz) 8 8 88 9 96 1 f (MHz) f = 8-96 MHz; V CE = 1,5 V; P L = W; T h =5 C; typ. values. f = 8-96 MHz; V CE = 1,5 V; P L = W; T h =5 C; typ. values. Fig.19 Input impedance (series components). Fig. Load impedance (series components). 1 (db) 9 MDA388 8 7 6 5 8 85 9 95 f (MHz) 1 Fig.1 Power gain. March 1993 1
/SL PACKAGE OUTLINES Studded ceramic package; leads SOT1A D ceramic BeO A Q metal c N 1 D 1 A N D w 1 M A M W N 3 X M 1 H detail X b L α 3 H 1 5 1 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) N UNIT A b c D D 1 D H L M 1 M N 1 N 3 Q W max. 5.97 5.85.18 7.5 6.8 7. 7.56 9.91 3.18 1.66 11.8 3.86 3.38 8-3 mm 1..7 5.58.1 7.3 6. 6.93 5.78 9.1.66 1.39 11..9.7 UNC w 1.381 α 9 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT1A 97--18 March 1993 15
/SL Studless ceramic package; leads SOT1D D A Q D c H b L α 3 H 1 5 1 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D H L Q α mm.17 3.7 5.85 5.58.18.1 7.5 7.3 7. 6.98 7.56 5.78 9.91 9.1 1.58 1.7 9 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT1D 97--18 March 1993 16
/SL DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 13). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 17