IntraSense TM Series 1-French Wire-Connected Pressure Sensor SMI-1A AAUU

Similar documents
IntraSense TM Series 1-French Wire-Connected Pressure Sensor Standard IntraSense TM Families

Small Absolute Pressure Sensor

OEM Silicon Pressure Die

Small Gage Pressure Sensor

Small, Gauge Pressure Sensor

Low Pressure Sensor Amplified Analog Output SM6295-BCM-S

SM98A Harsh Media Backside Absolute Pressure Series

Medium Pressure Sensor Analog Output

V N (8) V N (7) V N (6) GND (5)

FPF1007-FPF1009 IntelliMAX Advanced Load Products

BAT54XV2 Schottky Barrier Diode

FFSH2065BDN-F085. Silicon Carbide Schottky Diode, 650 V, 20 A

NCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit

FFSP0665A/D. Silicon Carbide Schottky Diode 650 V, 6 A Features. FFSP0665A Silicon Carbide Schottky Diode. Description.

Compound Coefficient Pressure Sensor PSPICE Models

S3A - S3N General-Purpose Rectifiers

FFSH15120A/D. Silicon Carbide Schottky Diode 1200 V, 15 A Features. FFSH15120A Silicon Carbide Schottky Diode. Description.

FFS50120AF-DIE. Silicon Carbide Schottky Diode 1200 V, 50 A

Features. T A =25 o C unless otherwise noted

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE

NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual

FFSH30120A. Silicon Carbide Schottky Diode 1200 V, 30 A

2N7002DW N-Channel Enhancement Mode Field Effect Transistor

FFSD08120A/D. Silicon Carbide Schottky Diode 1200 V, 8 A Features. FFSD08120A Silicon Carbide Schottky Diode. Description.

NL17SV16. Ultra-Low Voltage Buffer

FFSH20120ADN-F085. Silicon Carbide Schottky Diode 1200 V, 20 A

1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES VOLTS

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88

NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

RS1A - RS1M Fast Rectifiers

Features. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D

Operating Characteristics Table 1. Operating Characteristics (V S = 3.0 Vdc, T A = 25 C unless otherwise noted, P1 > P2) Characteristic Symbol Min Typ

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes

LOW POWER SCHOTTKY. ESD > 3500 Volts. GUARANTEED OPERATING RANGES ORDERING INFORMATION V CC 8 7 GND

FFSH40120ADN-F155 Silicon Carbide Schottky Diode

PN2907 / MMBT2907 PNP General-Purpose Transistor

MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS

SN74LS157MEL. Quad 2 Input Multiplexer LOW POWER SCHOTTKY

FDV301N Digital FET, N-Channel

SN74LS157MEL LOW POWER SCHOTTKY

FDG6322C Dual N & P Channel Digital FET

SN74LS132MEL. Quad 2 Input Schmitt Trigger NAND Gate LOW POWER SCHOTTKY

Features. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.

MC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays

NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj

onlinecomponents.com

NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS

MARKING DIAGRAMS 16 LOGIC DIAGRAM DIP PIN ASSIGNMENT TRUTH TABLE ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620 MC10173L AWLYYWW

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor

NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V

The MC10107 is a triple 2 input exclusive OR/NOR gate. P D = 40 mw typ/gate (No Load) t pd = 2.8 ns typ t r, t f = 2.

Solid Tantalum Chip Capacitors, TANTAMOUNT, Conformal Coated, Maximum CV, Low ESR

MMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

Small Signal Zener Diodes, Dual

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon

MARKING DIAGRAMS 16 LOGIC DIAGRAM DIP PIN ASSIGNMENT CLOCKED TRUTH TABLE ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620

Ceramic Disc Capacitors Class 1 and 2, 500 V DC, General Purpose

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V

SN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY

LM4040, LM4041. Precision Micro-Power Shunt Voltage References

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

MARKING DIAGRAMS 16 LOGIC DIAGRAM DIP PIN ASSIGNMENT CLOCKED TRUTH TABLE ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620

LV5217GP. Specifications. Bi-CMOS IC 3ch LED Driver. Absolute Maximum Ratings at Ta = 25 C. Ordering number : ENA0833A.

Recovering MC56F8300 Family Devices from Extreme RFI

NE522 High Speed Dual Differential Comparator/Sense Amp

SN74LS74AMEL LOW POWER SCHOTTKY

NGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj

NGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj

2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

NLSV2T Bit Dual-Supply Inverting Level Translator

NGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj

FDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel

NL17SH02. Single 2-Input NOR Gate

NTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)

MARKING DIAGRAMS LOGIC DIAGRAM DIP PIN ASSIGNMENT TRUTH TABLE ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620 MC10161L AWLYYWW

MC Bit Magnitude Comparator

MARKING DIAGRAMS LOGIC DIAGRAM DIP PIN ASSIGNMENT ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620 MC10138L AWLYYWW

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

74VHC08 Quad 2-Input AND Gate

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

Small Signal Zener Diodes, Dual

SN74LS125A, SN74LS126A. Quad 3 State Buffers LOW POWER SCHOTTKY. LS125A LS126A TRUTH TABLES ORDERING INFORMATION

Power Resistor for Mounting onto a Heatsink Thick Film Technology

LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION PLASTIC N SUFFIX CASE 648

NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209. Silicon Tuning Diodes pf, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES

Parameter Test condition Symbol Value Unit. Mounted on epoxy-glass hard tissue, fig µm copper clad, 0.9 mm 2 copper area per electrode

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

Transcription:

IntraSense TM Series 1-French Wire-Connected Pressure Sensor SMI-1A-48-180-AAUU FEATURES Miniature size: 750 µm 220 µm 75 µm Fits within 1-French catheter products Typical drift <1 mmhg/hour drift in 37 C saline Encapsulated A.W.G. 48 copper trifilarconnection for ease of integration Meets AAMI specification guidelines RoHS and REACH Compliant Biocompatible materials DESCRIPTION The IntraSense TM series are absolute pressure sensors designed to fit into a 1-French hypo tube. The attached wire simplifies the connection for the end user, and for disposable procedures, additional gel or encapsulation is not required. This absolute die delivers accurate and stable pressure for acute procedures in the clinically useful range of -300 mmhg to 300mmHg. The output is stable in 37 C saline. The proximal end of the trifilar is terminated in 2cm stripped bare copper wires. Length of wire is per customer requirements. This device is intended for single use. Medical Applications ENDOVASCULAR NEPHROLOGY INTRACRANIAL OTHER Invasive blood pressure Endourology Intracranial Pressure Monitors Labor and childbirth Central arterial line Urinalysis Spinal Pressure Guided biopsies Swan-Ganz catheters Animal monitoring Page 1

Maximum Ratings All parameters are specified at VSUPPLY = 2.5 V supply voltage at 37 o C, unless otherwise noted. No. Characteristic Symbol Minimum Typical Maximum Units 1 ExcitationVoltage (a) V DD -0.2-3.0 V 2 Operating Temperature T OP 0 - +105 C 3 Storage Temperature T STG 0 - +105 C 4 ESD Rating TBD kv a.halfbridgeshallbedrivenwithsupplyvoltageapplied tothesig+andsig-pads. No. Product Number Operating Pressure BurstPressure (P BURST ) (b) 4 SMI-1A-48-180-AAUU b.testedonasamplebasis. 460 to 1,060 mmhg -300 to 300 mmhg Gauge Operating Characteristics - Specifications All parameters are specified at Vdd = 2.5 V supply voltage at 37 o C, unless otherwise noted. 4,000 mmhg No. Characteristic Symbol Minimum Typical Maximum Units 5 Full Scale Span (c,d) 4 mv/v 6 Pressure Sensitivity (c,d) S V 6 µv/v/mmhg 7 Zero Pressure Offset (c) V OFFSET 7 mv/v 8 Offset at Ambient Pressure (c,e) V CLINICAL 12 mv/v 9 Input Resistance (c) R BRIDGE 2,615 3350 3,615 Ω 10 Clinical Pressure Nonlinearity (c,d) NL -0.04 %FS 11 OutputStability (f) +1 mmhg shift in zero offset per hour 12 Temperature Coefficient of Zero Offset (c,g) TCZ (c) -0.1 %FS/ C 13 Temperature Coefficient of Span (c,g) TCS (c) -0.22 %FS/ C 14 Temperature Coefficient of Resistance (c,g) TCR (c) 0.12 %Rb/ C 15 Pressure Hysteresis (c,d) P HYST 0.5 %FS 16 Temperature Hysteresis (c, g) T HYST 0.2 %FS c. Measurements made by connecting the half-bridge sensor to two additional 0ppm TCR 2731 Ohm resistors to form a complete Wheatstone bridge. See diagramonp.3. d. Calculated from 400mmHg absolute to 1060mmHg absolute(-300mmhg to +300mmHg gauge). e. Determined at 760mmHg absolute f. Determined during immersion in 37 C saline g. Determined in the temperature range 0 C to 50 C Page 2

SM1A Diagrams and Dimensions Green Unique die ID Substrate Sensor Encapsulation 220 +0.01 750 + 0.025 775 +10 Yellow Red 2731Ωon PCB 2731Ωon PCB Sensor Thickness = 75 +12 Encapsulation thickness TBD All dimensions are in microns. Wire Bond Pad Description Wire Color Wire Name Pad Function Green V DD V SUPPLY Yellow R Center Sig+ Red R Edge Sig- Page 3

Ordering Information Order Code Rated Pressure Range Pressure Type Design Feature SMI-1A-48-050-AAUU SMI-1A-48-060-AAUU SMI-1A-48-100-AAUU SMI-1A-48-180-AAUU SMI-1A-48-200-AAUU SMI-1A-48-300-AAUU 50cm Wire Length 60cm Wire Length 100cm Wire Length 180cm Wire Length 200cm Wire Length 300cm Wire Length For other wire lengths or custom features, contact SMI Sales at (408) 577-0100 or sales@si-micro.com Part Number Legend SMI -1A -48-180 -AAUU Silicon Microstructures IntraSense TM First Generation Sensor Revision A Trifilar Length (cm) A.W.G. Wire Gauge Epoxy Type Proximal End Configuration Calibration Code (UU = uncalibrated) Shipping method is as yet unspecified. CAUTION: This pressure transducer is not protected against defibrillation discharges. It must be used only with monitors labeled as having an isolated defibrillator-protected patient connection. IntraSense TM hasnotbeenqualified asanimplantable device. Itisdesigned forsingle use Qualification Standards REACH Compliant RoHS Compliant PFOS/PFOA Compliant For qualification specifications, please contact Sales at sales@si-micro.com Page 4

Silicon Microstructures Warranty and Disclaimer: Silicon Microstructures, Inc. reserves the right to make changes without further notice to any products herein and to amend thecontentsofthisdatasheetatanytimeandatitssolediscretion. Information in this document is provided solely to enable software and system implementers to use Silicon Microstructures, Inc. products and/or services. No express or implied copyright licenses are granted hereunder to design or fabricate any siliconbased microstructures based on the information in this document. Silicon Microstructures, Inc. makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Silicon Microstructures, Inc. assume any liability arising out of the application or use of any product or silicon-based microstructure, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Silicon Microstructure s data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. Silicon Microstructures, Inc. does not convey any license under its patent rights nor the rights of others. Silicon Microstructures, Inc. makes no representation that the circuits are free of patent infringement. Silicon Microstructures, Inc. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Silicon Microstructures, Inc. product could create a situation where personal injury or death may occur. Should Buyer purchase or use Silicon Microstructures, Inc. products for any such unintended or unauthorized application, Buyer shall indemnify and hold Silicon Microstructures, Inc. and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Silicon Microstructures, Inc. was negligent regarding the design or manufacture of the part. Silicon Microstructures, Inc. warrants goods of its manufacture as being free of defective materials and faulty workmanship. Silicon Microstructures, Inc. standard product warranty applies unless agreed to otherwise by Silicon Microstructures, Inc. in writing; please refer to your order acknowledgement or contact Silicon Microstructures, Inc. directly for specific warranty details. If warranted goods are returned to Silicon Microstructures, Inc. during the period of coverage, Silicon Microstructures, Inc. will repair or replace, at its option, without charge those items it finds defective. The foregoing is buyer s sole remedy and is in lieu of all warranties, expressed or implied, including those of merchantability and fitness for a particular purpose. In no event shall Silicon Microstructures, Inc. be liable for consequential, special, or indirect damages. While Silicon Microstructures, Inc. provides application assistance personally, through its literature and the Silicon Microstructures, Inc. website, it is up to the customer to determine the suitability of the product for its specific application. The information supplied by Silicon Microstructures, Inc. is believed to be accurate and reliable as of this printing. However, Silicon Microstructures, Inc. assumes no responsibility for its use. Silicon Microstructures, Inc. assumes no responsibility for any inaccuracies and/or errors in this publication and reserves the right to make changes without further notice to any products or specifications herein Silicon Microstructures, Inc.TM and the Silicon Microstructures, Inc. logo are trademarks of Silicon Microstructures, Inc. All other service or product names are the property of their respective owners.. Page 5