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CM1DU-1H Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 15697-1 (7) 95-77 Dual IGBTMOD U-Series Module 1 Amperes/6 Volts T C Measured Point E A B F G H CE1 E C1 J - Mounting Holes (6.5 Dia.) U D CM E G C K V 3-M5 Nuts R O P Q M O P N G1 E1 Description: Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. CE1 E C1 G E E1 G1 Features: ow Drive Power ow V CE(sat) Discrete Super-Fast Recovery (7ns) Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 3.7 9. B 3.15±.1.±.5 C 1.9. D.9. E. 7. F.67 17. G.91 3. H.91 3. J.3 11. K.71 1..16. Dimensions Inches Millimeters M.7 1. N.53 13.5 O.1.5 P.63 16. Q.9 5. R 1.1 +./-. 3. +1./-.5 S.3 7.5 T.3 1. U.16. V.51 13. Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies aser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM1DU-1H is a 6V (V CES ), 1 Ampere Dual IGBTMOD Power Module. Current Rating V CES Type Amperes Volts (x 5) CM 1 1 1
Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 15697-1 (7) 95-77 CM1DU-1H 1 Amperes/6 Volts Absolute Maximum Ratings, T j = 5 C unless otherwise specified Ratings Symbol CM1DU-1H Units Junction Temperature T j - to 15 C Storage Temperature T stg - to 15 C Collector-Emitter Voltage (G-E SHORT) V CES 6 Volts Gate-Emitter Voltage (C-E SHORT) V GES ± Volts Collector Current (T c = 5 C) I C 1 Amperes Peak Collector Current I CM * Amperes Emitter Current** (T c = 5 C) I E 1 Amperes Peak Emitter Current** I EM * Amperes Maximum Collector Dissipation (T c = 5 C, T j 15 C) P c Watts Mounting Torque, M5 Main Terminal 31 in-lb Mounting Torque, M6 Mounting in-lb Weight 31 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 5 Volts * Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating. Static Electrical Characteristics, T j = 5 C unless otherwise specified Collector-Cutoff Current I CES V CE = V CES, V GE = V 1 ma Gate eakage Current I GES V GE = V GES, V CE = V.5 µa Gate-Emitter Threshold Voltage V GE(th) I C = 1mA, V CE = 1V.5 6 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 1A, V GE = 15V,. 3. Volts I C = 1A, V GE = 15V, T j = 15 C.6 Volts Total Gate Charge Q G V CC = 3V, I C = 1A, V GE = 15V nc Emitter-Collector Voltage** V EC I E = 1A, V GE = V.6 Volts Dynamic Electrical Characteristics, T j = 5 C unless otherwise specified Input Capacitance C ies. nf Output Capacitance C oes V CE = 1V, V GE = V. nf Reverse Transfer Capacitance C res 1.3 nf Resistive Turn-on Delay Time t d(on) V CC = 3V, I C = 1A, 1 ns oad Rise Time t r V GE1 = V GE = 15V, 5 ns Switch Turn-off Delay Time t d(off) R G = 6.3Ω, Resistive ns Times Fall Time t f oad Switching Operation 3 ns Diode Reverse Recovery Time** t rr I E = 1A, di E /dt = -A/μs 16 ns Diode Reverse Recovery Charge** Q rr I E = 1A, di E /dt = -A/μs. µc Thermal and Mechanical Characteristics, T j = 5 C unless otherwise specified Thermal Resistance, Junction to Case R th(j-c) Q Per IGBT 1/ Module.31 C/W Thermal Resistance, Junction to Case R th(j-c) D Per FWDi 1/ Module.7 C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied.35 C/W
Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 15697-1 (7) 95-77 CM1DU-1H 1 Amperes/6 Volts COECTOR CURRENT, I C 16 1 T j = 5 o C V GE = V 15 OUTPUT CHARACTERISTICS 6 1 1 13 1 11 1 VOTAGE, V CE, (VOTS) 9 COECTOR CURRENT, I C 16 1 TRANSFER CHARACTERISTICS V CE = 1V T j = 15 C 1 16 GATE-EMITTER VOTAGE, V GE, (VOTS) SATURATION VOTAGE, V CE(sat), (VOTS) SATURATION VOTAGE CHARACTERISTICS 5 3 1 V GE = 15V T j = 15 C 1 16 COECTOR-CURRENT, I C SATURATION VOTAGE, V CE(sat), (VOTS) 1 SATURATION VOTAGE CHARACTERISTICS 6 I C = 1A I C = A I C = A EMITTER CURRENT, I E 1 1 FREE-WHEE DIODE FORWARD CHARACTERISTICS CAPACITANCE, C ies, C oes, C res, (nf) 1 1 1-1 V GE = V f = 1MHz CAPACITANCE VS. V CE C ies C oes C res 1 16 GATE-EMITTER VOTAGE, V GE, (VOTS).6 1. 1. 1...6 3. EMITTER-COECTOR VOTAGE, V EC, (VOTS) 1-1 -1 1 1 VOTAGE, V CE, (VOTS) HAF-BRIDGE SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS GATE CHARGE, V GE SWITCHING TIME, (ns) 1 3 1 1 V CC = 3V V GE = ±15V R G = 6.3 Ω T j = 15 C t d(off) t f t d(on) t r 1 1 COECTOR CURRENT, I C REVERSE RECOVERY TIME, t rr, (ns) 1 3 di/dt = -A/µsec t rr I rr 1 1 1 1 EMITTER CURRENT, I E 1 1 REVERSE RECOVERY CURRENT, I rr GATE-EMITTER VOTAGE, V GE, (VOTS) 16 1 I C = 1A V CC = V 5 1 15 GATE CHARGE, Q G, (nc) V CC = 3V 5 3 3
Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 15697-1 (7) 95-77 CM1DU-1H 1 Amperes/6 Volts NORMAIZED TRANSIENT THERMA IMPEDANCE, Z th(j-c) Z th = R th (NORMAIZED VAUE) TRANSIENT THERMA IMPEDANCE CHARACTERISTICS (IGBT) 1 1 1-3 1-1 -1 1 1 1-1 1-1 -3 Single Pulse T C = 5 C Per Unit Base = R th(j-c) =.31 C/W 1-5 1-1 -3 TIME, (s) 1-1 1-1 -3 NORMAIZED TRANSIENT THERMA IMPEDANCE, Z th(j-c) Z th = R th (NORMAIZED VAUE) TRANSIENT THERMA IMPEDANCE CHARACTERISTICS (FWDi) 1 1 1-3 1-1 -1 1 1 1-1 1-1 -3 Single Pulse T C = 5 C Per Unit Base = R th(j-c) =.7 C/W 1-5 1-1 -3 TIME, (s) 1-1 1-1 -3