BCW6, BCX7 NPN Silicon A Transistors or A input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (PNP) Pbfree (RoHS compliant) package ) Qualified according AEC Q Type Marking Pin Configuration Package BCW6B BCW6C BCW6D BCW6 BCX7G BCX7H BCX7J BCX7K ABs ACs ADs As AGs AHs AJs AKs =B =B =B =B =B =B =B =B =E =E =E =E =E =E =E =E =C =C =C =C =C =C =C =C SOT SOT SOT SOT SOT SOT SOT SOT Pbcontaining package may be available upon special request 74
BCW6, BCX7 Maximum Ratings Parameter Symbol alue Unit Collectoremitter voltage CEO BCW6,...6 BCX7 4 Collectorbase voltage CBO BCW6,...6 BCX7 4 Emitterbase voltage EBO 6 Collector current I C Peak collector current I CM Peak base current I BM Total power dissipation T S 7 C P tot mw Junction temperature T j C Storage temperature T stg 6... Thermal Resistance Parameter Symbol alue Unit Junction soldering point ) R thjs 4 K/W or calculation of R thja please refer to Application Note Thermal Resistance 74
BCW6, BCX7 Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol alues Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage (BR)CEO I C =, I B =, BCW6,...6 I C =, I B =, BCX7 4 Collectorbase breakdown voltage I C = µa, I E =, BCW6,...6 I C = µa, I E =, BCX7 (BR)CBO 4 Emitterbase breakdown voltage I E = µa, I C = Collectorbase cutoff current CB =, I E =, BCW6,...6 CB = 4, I E =, BCX7 CB =, I E =, T A = C, BCW6,...6 CB = 4, I E =, T A = C, BCX7 (BR)EBO 6 I CBO.. µa Emitterbase cutoff current EB = 4, I C = DC current gain I C = µa, CE =, h E grp. G I C = µa, CE =, h E grp. B/ H I C = µa, CE =, h E grp. C/ J/ I C = µa, CE =, h E grp. D/ K I C =, CE =, h E grp. G I C =, CE =, h E grp. B/ H I C =, CE =, h E grp. C/ J/ I C =, CE =, h E grp. D/ K I C =, CE =, h E grp. G I C =, CE =, h E grp. B/ H I C =, CE =, h E grp. C/ J/ I C =, CE =, h E grp. D/ K I EBO na h E 4 8 8 7 9 4 46 7 46 6 74
BCW6, BCX7 DC Electrical Characteristics Parameter Symbol alues Unit min. typ. max. Characteristics Collectoremitter saturation voltage ) I C =, I B =. I C =, I B =. Base emitter saturation voltage ) I C =, I B =. I C =, I B =. Baseemitter voltage ) I C = µa, CE = I C =, CE = I C =, CE = Pulse test: t < µs; D < % CEsat BEsat BE(ON).....7.8.8...8.6.7.78 4 74
BCW6, BCX7 AC Characteristics Transition frequency I C =, CE =, f = MHz Collectorbase capacitance CB =, f = MHz Emitterbase capacitance EB =., f = MHz Shortcircuit input impedance I C =, CE =, f = khz, h E grp. G I C =, CE =, f = khz, h E grp. B/ H I C =, CE =, f = khz, h E grp. C/ J / I C =, CE =, f = khz, h E grp. D/ K f T MHz C cb.9 p C eb 9 h e kω.7.6 4. 7. Opencircuit reverse voltage transf. ratio h e 4 I C =, CE =, f = khz, h E grp. G. I C =, CE =, f = khz, h E grp. B /H I C =, CE =, f = khz, h E grp. C/ J/ I C =, CE =, f = khz, h E grp. D/ K Shortcircuit forward current transf. ratio h e I C =, CE =, f = khz, h E grp. G I C =, CE =, f = khz, h E grp. B/ H 6 I C =, CE =, f = khz, h E grp. C/ J/ I C =, CE =, f = khz, h E grp. D/ K Opencircuit output admittance I C =, CE =, f = khz, h E grp. G h e 8 µs I C =, CE =, f = khz, hegrp. B/ H 4 I C =, CE =, f = khz, hegrp. C/ J/ I C =, CE =, f = khz, h E grp. D/ K Noise figure I C = µa, CE =, f = khz, D f = Hz, R S = kω, h E grp. B K I C = µa, CE =, f = khz, f = Hz, R S = kω, h E grp. Equivalent noise voltage I C = µa, CE =, R S = kω, f =... Hz, h E grp. n. µ 74
BCW6, BCX7 DC current gain h E = ƒ(i C ) CE = Collectoremitter saturation voltage I C = ƒ( CEsat ), h E = BCW 6/BCX 7 EHP4 BCW 6/BCX 7 EHP h E C C C C C C Ι C....4 CEsat. Baseemitter saturation voltage I C = ƒ( BEsat ), h E = 4 Collector current I C = ƒ( BE ) CE = BCW 6/BCX 7 EHP BCW 6/BCX 7 EHP C C C C C C..4.6.8... BE sat BE 6 74
BCW6, BCX7 Collector cutoff current I CBO = ƒ(t A ) CB = CEmax Transition frequency f T = ƒ(i C ) CE = parameter in, f = GHz 4 BO na BCW 6/BCX 7 EHP f T MHz BCW 6/BCX 7 EHP max typ T A C Ι C Collectorbase capacitance C cb = ƒ( CB ) Emitterbase capacitance C eb = ƒ( EB ) Total power dissipation P tot = ƒ(t S ) p 6 mw CCB(CEB) 9 8 7 Ptot 7 4 6 8 4 CEB 9 6 CCB 4 8 6 CB ( EB ) 4 6 7 9 C T S 7 74
BCW6, BCX7 Permissible Pulse Load P totmax /P totdc = ƒ(t p ) h parameter h e = ƒ(i C ) normalized CE = P P tot max tot DC BCW 6/BCX 7 t p = D T t p T EHP8 h e BCW 6/BCX 7 EHP6 D =....... h e h e h e CE = h e 6 4 s t p Ι C h parameter h e = ƒ( CE ) normalized I C = Noise figure = ƒ( CE ) I C =., R S = kω, f = khz. BCW 6/BCX 7 EHP7 BCW 6/BCX 7 EHP8 h e =. h e h e. h e h e. CE CE 8 74
BCW6, BCX7 Noise figure = ƒ(f) Noise figure = ƒ(i C ) CE =, Z S = Z Sopt CE =, f = Hz BCW 6/BCX 7 EHP9 BCW 6/BCX 7 EHP4 R S = MΩ kω kω Ω kω Noise figure = ƒ(i C ) CE =, f = khz khz f Noise figure = ƒ(i C ) CE =, f = khz BCW 6/BCX 7 EHP4 BCW 6/BCX 7 EHP4 RS = MΩ kω kω R S = MΩ kω kω Ω kω Ω kω 9 74
Package SOT BCW6, BCX7 Package Outline +. ).4..9 ±..9 B C.9.4 ±.. MIN. MAX. ±.. MAX....8 MAX..8.... ±. A. M BC. M A oot Print ) Lead width can be.6 max. in dambar area.8.8..9..9 Marking Layout (Example) EH s Manufacturer, June Date code (YM) Pin BCW66 Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.9. 8..6 Pin.. 74
BCW6, BCX7 Edition 6 Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 7. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information or further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. or information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 74