Lecture 1 - Electrons, Photons and Phonons. September 4, 2002

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6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-1 Lecture 1 - Electrons, Photons and Phonons Contents: September 4, 2002 1. Electronic structure of semiconductors 2. Electron statistics 3. Lattice vibrations 4. Thermal equilibrium Reading assignment: del Alamo, Ch. 1 Announcements: Tomorrow s recitation slot will be used as lecture (in exchange for lecture slot in December that will be used as recitation). Go to http://weblab.mit.edu and register. Put 6.720 student in the Description field.

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-2 Key questions What makes semiconductors so special? How do electrons arrange themselves (in energy) in an electronic system? Why should we be concerned with the vibrational modes of the lattice of a crystalline solid? What is the formal definition of thermal equilibrium? What are some of its consequences?

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-3 1. Semiconductors as solids Semiconductors are crystalline solids Crystalline solid = elemental atomic arrangement, or unit cell, repeated ad infinitum in space in three dimensions. Si lattice constant: 0.54 nm Si atomic spacing: 0.24 nm Si atomic density: 5.0 10 22 cm 3 Semiconductors held together by covalent bonding 4 valence electrons shared with 4 neighbours low energy situation. IIB IIIA IVA VA VIA 5 6 7 8 B C N O 13 14 15 Al Si P 30 31 32 33 34 Zn Ga Ge As Se 48 49 50 51 S Cd In Sn Sb Te 16 52

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-4 Solid is electronic system with periodic potential Fundamental result of solid-state physics: quantum states cluster in bands leaving bandgaps (regions without allowed states) in between. E

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-5 Semiconductor band structure There are many more quantum states than electrons in a solid. Quantum states filled with one electron per state starting from lowest energy state (Pauli exclusion principle). Distinct feature of semiconductors: At 0 K, filling ends up with full band separated by 1 3 ev bandgap from next empty band At around 300 K, some electrons populate next band above bandgap. Eo Eg

t n ( ) 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-6 2. Electron statistics At finite temperature, state occupation probability by electron determined by Fermi-Dirac distribution function: f(e) = 1 1+exp E E F kt E F Fermi energy energy for which occupation probability is 50% k Boltzmann constant =8.62 10 5 ev/k kt thermal energy =25.9 mev @ 300 K 1 ) s i n u 0.9 0.8 0.7 0.6 o 0.5 E 0.4 ( f 0.3 0.2 0.1 Maxwell-Boltzmann Fermi- Dirac Maxwell-Boltzmann 0-10 -8-6 -4-2 0 2 4 6 8 10 (E-EF)/kT (no units)

t n ( ) 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-7 Properties of Fermi-Dirac distribution function: 1 ) s i n u 0.9 0.8 0.7 0.6 o 0.5 E 0.4 ( f 0.3 0.2 0.1 Maxwell-Boltzmann Fermi- Dirac Maxwell-Boltzmann 0-10 -8-6 -4-2 0 2 4 6 8 10 (E-EF)/kT (no units) for E E F : f(e) 1 for E E F : f(e) 0 width of transition around E F 3kT (20% criterium) symmetry: f(e F + E 1 )=1 f(e F E 1 )

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-8 Temperature dependence of Fermi-Dirac distribution function: 1 0.9 0.8 0.7 0.6 f(e) 0.5 0.4 0.3 T=1000 K 0.2 300 0.1 1 100 0-0.4-0.3-0.2-0.1 0 0.1 0.2 0.3 0.4 E-E F (ev) In general, E F function of T.

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-9 3. Lattice vibrations At finite T atoms in lattice vibrate. Solid is large coupled system only certain vibrational modes are possible. Each vibrational mode is characterized by its mechanical energy. Define density of modes: D(E) 0 E opt energy few modes at low energies (acoustical modes) many modes at a certain energy E opt (optical modes) no modes beyond E opt For Si: E opt =63 mev.

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-10 Lattice can exchange energy with electrons in the solid: an electron can give some energy to the lattice: excites an available vibrational mode an electron can acquire energy from lattice: a vibrational mode is extinguished Easy to think of vibrational modes as particles: phonons. Then talk about: phonon emission by an electron phonon absorption by an electron Similarly with photons or quanta of light. Photon and phonon emission and absorption are important energy exchange mechanisms in semiconductors.

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-11 4. Thermal equilibrium A particle system is in thermal equilibrium if: it is closed: no energy flow through boundaries of system it is in steady-state: time derivatives of all ensemble averages (global and local) are zero hυ δ<θ> δt =0 Thermal equilibrium important because all systems evolve towards TE after having been perturbed. In order to know how a system evolves, it is essential to know where it is going.

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-12 In thermal equilibrium, E F constant throughout system high energy states occupied low energy states empty E F E F

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-13 Key conclusions In solids, electron states cluster in bands separated by bandgaps. Distinct feature of semiconductors: at 0 K, quantum state filling ends up with full band separated from next empty band by 1 3 ev bandgap at around 300 K, some electrons populate next band above bandgap. Occupation probability of quantum systems in thermal equilibrium governed by Fermi-Dirac distribution function: f(e) = 1 1+exp E E F kt Electrons can exchange energy with photons (quanta of light) and with phonons (quanta of vibrational energy of lattice). System in thermal equilibrium: isolated from outside world + in steady state. In thermal equilibrium, E F is independent of position. Order of magnitude of key parameters: atomic density of Si: N Si 5 10 22 cm 3 bandgap of Si: E g 1 ev thermal energy: kt 26 mev @ 300K optical phonon energy of Si: E opt 60 mev

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 1-14 Self-study Concept of blackbody radiation. Concept of vacuum energy. Concept of density of states. Understand how can the Fermi energy change with temperature. Maxwel l-boltzmann distribution function.