SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiv) SK Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.Ω (typ.) High forward transfer admittance: Yfs =. S (typ.) Low leakage current: IDSS = μa (VDS = 7 V) Enhancement mode: Vth =.~. V (VDS = V, ID = ma) Maximum Ratings (Ta = C) Characteristics Symbol Rating Unit Drain-source voltage V DSS 9 V Drain-gate voltage (R GS = kω) V DGR 9 V Gate-source voltage V GSS ± V Drain current DC (Note ) I D Pulse (t = ms) (Note ) I DP Drain power dissipation (Tc = C) P D W Single pulse avalanche energy (Note ) E AS 9 mj Avalanche current I AR A Repetitive avalanche energy (Note ) E AR. mj Channel temperature T ch C Storage temperature range T stg -~ C Thermal Characteristics A JEDEC JEITA TOSHIBA : Gate : Drain : Source Weight :.7 g (typ.) SC-7 -UB Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c).7 C/W Thermal resistance, channel to ambient R th (ch-a). C/W Note : Ensure that the channel temperature does not exceed. Note : V DD = 9 V, T ch = C(Initial), L =. mh, I AR =. A, R G = Ω Note : Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. -7-
SK Electrical Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ± V, V DS = V ± µa Gate-source breakdown voltage V (BR) GSS I G =± µa, V DS = V ± V Drain cut-off current I DSS V DS = 7 V, V GS = V µa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V 9 V Gate threshold voltage V th V DS = V, I D = ma.. V Drain-source ON resistance R DS (ON) V GS = V, I D = A.. Ω Forward transfer admittance Y fs V DS = V, I D = A.. S Input capacitance C iss Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz Output capacitance C oss Rise time t r V V GS I D = A V OUT V Turn-on time t on R L = 7 Ω Switching time.7 Ω Fall time t f V DD V pf ns Turn-off time t off Duty < = %, t w = µs 7 Total gate charge Q g Gate-source charge Q gs V DD V, V GS = V, I D = A 7 nc Gate-drain charge Q gd Source-Drain Ratings and Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note ) I DR A Pulse drain reverse current (Note ) I DRP A Forward voltage (diode) V DSF I DR = A, V GS = V.7 V Reverse recovery time t rr I DR = A, V GS = V, 9 ns Reverse recovery charge Q rr di DR /dt = A/µs. µc Marking K Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. -7-
SK FORWARD TRANSFER ADMITTANCE Yfs (S) DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) I D V DS COMMON. SOURCE Tc = C..7 VGS =. V DRAIN-SOURCE VOLTAGE V DS (V) I D V GS VDS = V Tc = C GATE-SOURCE VOLTAGE V GS (V) Y fs I D Tc = C VDS = V.. DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) COMMON SOURCE Tc = C I D V DS DRAIN-SOURCE VOLTAGE V DS V DS V GS (V) GATE-SOURCE VOLTAGE V GS (V) R DS (ON) I D...7 VGS =.V Tc = ID = A. Tc = C VGS = V V.. DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) -7-
SK DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) R DS (ON) Tc ID = A VGS = V. DRAIN REVERSE CURRENT IDR (A)... I DR V DS Tc = C VGS =, V.... CASE TEMPERATURE Tc ( C) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE V DS V th Tc CAPACITANCE C (pf) Ciss Coss VGS = V Crss f = MHz Tc = C. GATE THRESHOLD VOLTAGE Vth (V) VDS = V ID = ma DRAIN-SOURCE VOLTAGE V DS (V) CASE TEMPERATURE Tc ( C) DRAIN POWER DISSIPATION PD (W) P D Tc DRAIN-SOURCE VOLTAGE VDS (V) DYNAMIC INPUT / OUTPUT CHARACTERISTICS VDS VGS VDD = V ID = A Tc = C GATE-SOURCE VOLTAGE VGS (V) CASE TEMPERATURE Tc ( C) TOTAL GATE CHARGE Q g (nc) -7-
SK r th t w NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/rth (ch-c)... μ.. Duty=.... SINGLE PULSE PDM t T Duty = t/t Rth (ch-c) =. C/W.7 C/W μ m m m PULSE WIDTH t w (s) SAFE OPERATING AREA E AS T ch DRAIN CURRENT ID (A). ID max (PULSED) * ID max (CONTINUOUS) * DC OPERATION Tc = C ms * SINGLE NONREPETITIVE PULSE Tc= CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. µs * VDSS max AVALANCHE ENERGY EAS (mj) 7. ドレイン ソース間電圧 V DS (V) CHANNEL TEMPERATURE (INITIAL) T ch ( C) V V B VDSS I AR V DD V DS TEST CIRCUIT R G = Ω V DD = 9 V, L =.mh WAVE FORM = BVDSS ΕAS L I BVDSS VDD -7-
SK RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. 9EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. -7-