GenX3 TM 6V IGBT wih Diode High speed PT IGBT for 4-1kHz Swiching IXGH48N6C3D1 V CES = 6V 11 = 48A V CE(sa) 2.V fi(yp) = 38ns TO-247 Symbol Tes Condiions Maximum Raings V CES = C o C 6 V V CGR = C o C, R GE = 1MΩ 6 V V GES Coninuous ± V V GEM Transien ±3 V = C (Limied by Leads) 7 A 11 = 11 C 48 A I D11 = 11 C 3 A M = C, 1ms A I A = C 3 A E AS = C 3 mj SSOA V GE = V, = 1 C, R G = 3Ω M = 1 A (RBSOA) Clamped Inducive Load @V CE < 6 V P C = C 3 W -... + C M C T sg -... + C T L mm (.62 in.) from Case for 1s 3 C T SOLD Plasic Body for 1 Seconds 26 C F C Mouning Torque 1.13/1 Nm/lb.in Weigh 6 g G C E ( TAB ) G = Gae C = Collecor E = Emier TAB = Collecor Feaures Opimized for Low Swiching Losses Square RBSOA Ani-Parallel Ulra Fas Diode Fas Swiching Avalanche Raed Inernaional Sandard Package Advanages High Power Densiy Low Gae Drive Requiremen Applicaions Symbol Tes Condiions Characerisic Values ( = C, Unless Oherwise Specified) Min. Typ. Max. V GE(h) = μa, V CE = V GE 3.. V ES V CE = V CES 3 μa V GE = V = 1 C 1.7 ma I GES V CE = V, V GE = ±V ±1 na V CE(sa) = 3A, V GE = V, Noe 1 2.3 2. V = 1 C V High Frequency Power Inverers UPS Moor Drives SMPS PFC Circuis Baery Chargers Welding Machines Lamp Ballass 9 IXYS CORPORATION, All righs reserved DS9994A(1/9)
IXGH48N6C3D1 Symbol Tes Condiions Characerisic Values ( = C, Unless Oherwise Specified) Min. Typ. Max. TO-247 AD Ouline g fs = 3A, V CE = 1V, Noe 1 3 S C ies 196 pf C oes V CE = V, V GE = V, f = 1MHz 2 pf C res 66 pf P Q g 77 nc Q ge = 3A, V GE = V, V CE =. V CES 16 nc Q gc 32 nc d(on) 19 ns ri Inducive Load, = C 26 ns = 3A, V GE = V.41 mj d(off) V CE = 4V, R G = 3Ω 6 1 ns fi 38 ns E off.23.42 mj d(on) 19 ns ri 26 ns Inducive Load, = 1 C.6 mj I C = 3A, V GE = V d(off) 92 ns V CE = 4V, R G = 3Ω fi 9 ns E off.7 mj R hjc.42 C/W R hcs.21 C/W Dim. Millimeer Inches Min. Max. Min. Max. A 4.7.3.18.9 A 1 2.2 2.4.87.12 A 2 2.2 2.6.9.98 b 1..4. b 1 2.13.6.84 b 2 2.87 3.12.113.123 C.4.8.16.31 D.8 26.819.84 E.7 16.26.61.64 e..72..2 L 19.81.32.78.8 L1 4..177 P 3. 3.6.14.144 Q.89 6.4.232.2 R 4.32.49.17.216 e Reverse Diode (FRED) Characerisic Values ( = C, Unless Oherwise Specified) Symbol Tes Condiions Min. Typ. Max. V F = 3A, V GE = V, Noe 1 2.7 V = C V I RM = 3A, V GE = V, -di F = 1A/μs, = 1 C 4 A rr = 1V = 1 C 1 ns = 1A, V GE = V, -di F = 1A/μs, = 3V ns R hjc.9 C/W Noe 1: Pulse Tes, 3μs, Duy Cycle, d 2%. IXYS reserves he righ o change limis, es condiions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,83,92 4,931,844,49,961,237,481 6,162,66 6,44,6 B1 6,683,344 6,727,8 7,,734 B2 7,7,338B2 by one or moreof he following U.S. paens: 4,8,72,17,8,63,37,381, 6,9,123 B1 6,34,343 6,71,4 B2 6,79,692 7,63,97 B2 4,881,16,34,796,187,117,486,7 6,36,728 B1 6,83, 6,71,463 6,771,478 B2 7,71,37
IXGH48N6C3D1 6 4 4 3 3 1 Fig. 1. Oupu Characerisics @ ºC.4.8 2 2.4 2.8 3.2 V CE - Vols V GE = V 13V 11V 9V 7V 3 27 24 21 18 1 9 6 3 Fig. 2. Exended Oupu Characerisics @ ºC V GE = V 13V 11V 9V 7V 2 4 6 8 1 12 14 16 18 V CE - Vols Fig. 3. Oupu Characerisics @ 1ºC Fig. 4. Dependence of V CE(sa) on Juncion Temperaure 6 V GE = V 13V 11V 1.1 V GE = V 4 4 3 3 1 9V 7V VCE(sa) - Normalized 1..9.8.7.6 = 6A = 3A = A.4.8 2 2.4 2.8. 7 1 1 V CE - Vols - Degrees Cenigrade Fig.. Collecor-o-Emier Volage vs. Gae-o-Emier Volage Fig. 6. Inpu Admiance. 1 = ºC 9 4. 8 VCE - Vols 4. 3. 3. = 6A 3A A 7 6 4 3 = -1ºC ºC - 4ºC 2. 1 2. 7 8 9 1 11 12 13 14 V GE - Vols.. 6. 6. 7. 7. 8. 8. 9. 9. 1. V GE - Vols 9 IXYS CORPORATION, All righs reserved
IXGH48N6C3D1 Fig. 7. Transconducance Fig. 8. Gae Charge 4 4 3 = - 4ºC ºC 16 14 12 V CE = 3V = 3A I G = 1 ma g f s - Siemens 3 1ºC VGE - Vols 1 8 6 1 4 2 1 3 4 6 7 8 9 1 11 1 - Amperes 1 3 4 6 7 8 Q G - NanoCoulombs Fig. 9. Capaciance Fig. 1. Reverse-Bias Safe Operaing Area 1, 11 f = 1 MHz 1 C ies 9 Capaciance - PicoFarads 1, 1 C oes C res 8 7 6 4 3 1 = 1ºC R G = 3Ω dv / d < 1V / ns 1 1 3 3 4 V CE - Vols 3 3 4 4 6 6 V CE - Vols Fig. 11. Maximum Transien Thermal Impedance 1. Z(h)JC - ºC / W.1.1.1.1.1.1.1 1 1 Pulse Widh - Seconds IXYS reserves he righ o change limis, es condiions, and dimensions. IXYS REF: G_48N6C3D1(D)1-23-9-B
IXGH48N6C3D1 Fig. 12. Inducive Swiching Energy Loss vs. Gae Resisance Fig. 13. Inducive Swiching Energy Loss vs. Collecor Curren 2.4 2.6 2. 2. Eoff - MilliJoules 2.2 2. 1..8 E off - - - - = 1ºC, V GE = V V CE = 4V = 6A = 3A 2.4 2.2 2. 1. - MilliJoules Eoff - MilliJoules 1..8.6 E off - - - - R G = 3Ω, V GE = V V CE = 4V = 1ºC, ºC 1..8.6 - MilliJoules.6.4.2 = A.8.6.4.4.2.4.2..2 1 3 3.. 3 3 4 4 6 R G - Ohms - Amperes Fig. 14. Inducive Swiching Energy Loss vs. Juncion Temperaure Fig.. Inducive Turn-off Swiching Times vs. Gae Resisance 2. 2. 13 3 Eoff - MilliJoules 1..8.6.4 E off - - - - R G = 3Ω, V GE = V V CE = 4V = 6A = 3A 1..8.6.4 - MilliJoules f - Nanoseconds 1 1 1 11 1 9 9 8 8 f d(off) - - - - = 1ºC, V GE = V V CE = 4V = A = 6A = 3A 3 3 27 2 17 1 1 d(off) - Nanoseconds.2. = A.2. 7 7 7 3 4 6 7 8 9 1 1 - Degrees Cenigrade 1 3 3 R G - Ohms Fig. 16. Inducive Turn-off Swiching Times vs. Collecor Curren Fig. 17. Inducive Turn-off Swiching Times vs. Juncion Temperaure f - Nanoseconds 14 13 1 11 1 9 8 7 6 f d(off) - - - - R G = 3Ω, VGE = V V CE = 4V = 1ºC 11 1 9 9 8 8 7 7 6 d(off) - Nanoseconds f - Nanoseconds 16 14 1 1 8 6 f d(off) - - - - R G = 3Ω, V GE = V V CE = 4V = 3A = 6A = A 1 11 1 9 8 7 d(off) - Nanoseconds 4 3 = ºC 6 4 6 3 3 4 4 6 - Amperes 3 4 6 7 8 9 1 1 - Degrees Cenigrade 9 IXYS CORPORATION, All righs reserved
IXGH48N6C3D1 Fig. 18. Inducive Turn-on Swiching Times vs. Gae Resisance Fig. 19. Inducive Turn-on Swiching Times vs. Collecor Curren 14 11 26 r - Nanoseconds 1 1 8 6 4 r d(on) - - - - = 1ºC, V GE = V V CE = 4V = 6A 4 4 3 3 d(on) - Nanoseconds r - Nanoseconds 1 9 8 7 6 4 3 r d(on) - - - - R G = 3Ω, V GE = V V CE = 4V ºC < TJ < 1ºC 24 23 22 21 19 18 d(on) - Nanoseconds = A, 3A 1 3 3 R G - Ohms 17 1 16 3 3 4 4 6 - Amperes 8 Fig.. Inducive Turn-on Swiching Times vs. Juncion Temperaure 7 24 r - Nanoseconds 6 4 3 r d(on) - - - - R G = 3Ω, V GE = V V CE = 4V = 6A = 3A 23 22 21 19 d(on) - Nanoseconds 1 = A 18 17 3 4 6 7 8 9 1 1 - Degrees Cenigrade IXYS reserves he righ o change limis, es condiions, and dimensions. IXYS REF: G_48N6C3D1(D)1-23-9-B
IXGH48N6C3D1 IF 6 A 4 3 1 = C =1 C = C 1 Q r nc 8 6 4 = 1 C = 3V = 6A = 3A = A I RM 3 A 1 = 1 C = 3V = 6A = 3A = A 1 2 3 V 1 A/μs 1 4 6 A/μs 8 1 V F -di F -di F Fig. 21. Forward curren versus V F Fig. 22. Reverse recovery charge Q r versus -di F Fig. 23. Peak reverse curren I RM versus -di F K f 2. 1. 1. rr 9 ns 8 = 6A = 3A = A = 1 C = 3V V FR V 1 = 1 C = 3A fr V FR 1. μs fr.7. I RM 7. Q r.. 4 8 1 C 16 Z hjc Fig. 24. Dynamic parameers Q r, I RM versus 1 K/W.1 6 4 6 A/μs 8 1 -di F Fig.. Recovery ime rr versus -di F. 4 6 A/μs 8 1 di F Fig. 26. Peak forward volage V FR and fr versus di F Consans for Z hjc calculaion: i R hi (K/W) i (s) 1.2.2 2.193.3 3..162.1 DSEP 29-6.1.1.1.1.1.1 s 1 Fig. 27. Transien hermal resisance juncion o case 9 IXYS CORPORATION, All righs reserved