BUK754-55A BUK764-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope V DS Drain-source voltage 55 V available in TOAB and SOT44. I D Drain current (DC) 73 A Using trench technology which P tot Total power dissipation 49 W features very low on-state T j Junction temperature 75 C resistance. It is intended for use in R DS(ON) Drain-source on-state automotive and general purpose resistance V GS = V 4 mω switching applications. PINNING TOAB & SOT44 PIN CONFIGURATION SYMBOL PIN DESCRIPTION mb tab d gate drain 3 source 3 3 g tab/mb drain SOT44 TOAB s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Drain-source voltage - - 55 V V DGR Drain-gate voltage R GS = kω - 55 V ±V GS Gate-source voltage - - V I D Drain current (DC) T mb = 5 C - 73 A I D Drain current (DC) T mb = C - 5 A I DM Drain current (pulse peak value) T mb = 5 C - 66 A P tot Total power dissipation T mb = 5 C - 66 W T stg, T j Storage & operating temperature - - 55 75 C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Thermal resistance junction to - -.9 K/W mounting base R th j-a Thermal resistance junction to in free air 6 - K/W ambient(toab) R th j-a Thermal resistance junction to Minimum footprint, FR4 5 - K/W ambient(sot44) board July Rev.
BUK754-55A BUK764-55A STATIC CHARACTERISTICS T j = 5 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = V; I D =.5 ma; 55 - - V voltage T j = -55 C 5 - - V V GS(TO) Gate threshold voltage V DS = V GS ; I D = ma 3 4 V T j = 75 C - - V T j = -55 C - - 4.4 V I DSS Zero gate voltage drain current V DS = 55 V; V GS = V; -.5 µa T j = 75 C - - 5 µa I GSS Gate source leakage current V GS = ± V; V DS = V - na R DS(ON) Drain-source on-state V GS = V; I D = 5 A - 4 mω resistance T j = 75 C - - 8 mω DYNAMIC CHARACTERISTICS T mb = 5 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C iss Input capacitance V GS = V; V DS = 5 V; f = MHz - 848 464 pf C oss Output capacitance - 4 56 pf C rss Feedback capacitance - 3 37 pf t d on Turn-on delay time V DD = 3 V; R load =.Ω; - 7 6 ns t r Turn-on rise time V GS = 5 V; R G = Ω - 79 9 ns t d off Turn-off delay time - 57 8 ns t f Turn-off fall time - 5 7 ns L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nh from package to centre of die L d Internal drain inductance Measured from contact screw on - 3.5 - nh tab to centre of die(toab) L d Internal drain inductance Measured from upper edge of drain -.5 - nh tab to centre of die(sot44) L s Internal source inductance Measured from source lead to - 7.5 - nh source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 5 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - 73 A current I DRM Pulsed reverse drain current - - 66 A V SD Diode forward voltage I F = 5 A; V GS = V -.85. V I F = 73 A; V GS = V -. - V t rr Reverse recovery time I F = 73 A; -di F /dt = A/µs; - 54 - ns Q rr Reverse recovery charge V GS = - V; V R = 3 V -. - µc July Rev.
BUK754-55A BUK764-55A AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT W DSS Drain-source non-repetitive I D = 5 A; V DD 5 V; - - 5 mj unclamped inductive turn-off V GS = 5 V; R GS = 5 Ω; T mb = 5 C energy PD% Normalised Power Derating ID/A 9 RDS(ON)=VSD/ID tp= us 8 7 6 us us 5 4 3 DC ms ms ms 4 6 8 4 6 8 VSD/V Tmb / C Fig.. Normalised power dissipation. PD% = P D /P D 5 C = f(t mb ) Fig.3. Safe operating area. T mb = 5 C I D & I DM = f(v DS ); I DM single pulse; parameter t p 9 8 7 6 5 4 3 ID% Normalised Current Derating. 4 6 8 4 6 8 E-7 E-5 E-3 E- E+ Tmb / C t/s Fig.. Normalised continuous drain current. ID% = I D /I D 5 C = f(t mb ); conditions: V GS 5 V.. Zth/(K/W).5...5. Fig.4. Transient thermal impedance. Z th j-mb = f(t); parameter D = t p /T For maximum permissible repetitive avalanche current see fig.8. July 3 Rev.
BUK754-55A BUK764-55A 8 ID/A 6 4 8 6 4. 5. VGS/V =. 9.5 4 6 8 VDS/V Fig.5. Typical output characteristics, T j = 5 C. I D = f(v DS ); parameter V GS 9. 8.5 8. 7.5 7. 6.5 6. 5.5 5. 4.5 ID/A 9 8 7 6 5 4 3 Tj/C= 75 o C 5 o C 4 6 8 VGS/V Fig.8. Typical transfer characteristics. I D = f(v GS ) ; conditions: V DS = 5 V; parameter T j 3 8 6 4 8 6 4 RDS(ON)/mOhm 5.5 5 5 5 3 35 4 45 5 ID/A Fig.6. Typical on-state resistance, T j = 5 C. R DS(ON) = f(i D ); parameter V GS 6. 6.5 7. 7.5 8.. 3 gfs/s 5 5 5 4 6 8 ID/A Fig.9. Typical transconductance, T j = 5 C. g fs = f(i D ); conditions: V DS = 5 V RDS(ON) Ohm 7 5 3 a.5 3V TrenchMOS 9 7.5 5 6 8 4 6 8 VGS/V Fig.7. Typical on-state resistance, T j = 5 C. R DS(ON) = f(v GS ); conditions: I D = 5 A; - -5 5 5 Tj / C Fig.. Normalised drain-source on-state resistance. a = R DS(ON) /R DS(ON)5 C = f(t j ); I D = 5 A; V GS = 5 V July 4 Rev.
BUK754-55A BUK764-55A VGS(TO) / V 5 4 3 max. typ. min. BUK759-6 - -5 5 5 Tj / C Fig.. Gate threshold voltage. V GS(TO) = f(t j ); conditions: I D = ma; V DS = V GS VGS / V 9 8 7 6 5 4 3 VDS = 4V VDS = 44V 3 4 5 QG / nc Fig.4. Typical turn-on gate-charge characteristics. V GS = f(q G ); conditions: I D = 5 A; parameter V DS E- E- Sub-Threshold Conduction [PICTURE] Fig.5. Typical reverse diode current. I F = f(v SDS ); conditions: V GS = V; parameter T j E-3 E-4 E-5 E-6 3 4 5 Fig.. Sub-threshold drain current. I D = f(v GS) ; conditions: T j = 5 C; V DS = V GS Capacitance / nf 4 3 % typ 98% 9 8 7 6 5 4 3 WDSS% 4 6 8 4 6 8 Tmb / C Fig.6. Normalised avalanche energy rating. W DSS % = f(t mb ); conditions: I D = 75 A 3 Ciss.. VDS/V Coss Crss Fig.3. Typical capacitances, C iss, C oss, C rss. C = f(v DS ); conditions: V GS = V; f = MHz July 5 Rev.
BUK754-55A BUK764-55A L + VDD RD + VDD VGS VDS T.U.T. - -ID/ VGS RG VDS T.U.T. - RGS R shunt Fig.7. Avalanche energy test circuit. W DSS =.5 LI D BV DSS /(BV DSS V DD ) Fig.9. Switching test circuit. I AV 5 o C T j prior to avalanche 5 o C... Avalanche Time, t AV (ms) Fig.8. Maximum permissible repetitive avalanche current(i AV ) versus avalanche time(t AV ) for unclamped inductive loads. July 6 Rev.
BUK754-55A BUK764-55A MECHANICAL DATA Dimensions in mm Net Mass: g 4,5 max,3 max 3,7,3,8 5,9 min 5,8 max 3, max not tinned,3 max (x) 3,54,54 3, 3,5 min,9 max (3x),6,4 Fig.. SOT78 (TOAB); pin connected to mounting base. Notes. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide.. Refer to mounting instructions for SOT78 (TO) envelopes. 3. Epoxy meets UL94 V at /8". July 7 Rev.
BUK754-55A BUK764-55A MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D -PAK); 3 leads (one lead cropped) SOT44 A E A D mounting base D H D 3 L p b c e e Q.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4. D A b c max. D.4.7.85.6.64.46.6. E e L p H D Q.3 9.7.54.9. 5.4 4.8.6. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT44 98--4 99-6-5 Fig.. SOT44 surface mounting package. Centre pin connected to mounting base. Notes. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling.. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC8. 3. Epoxy meets UL94 V at /8". July 8 Rev.
BUK754-55A BUK764-55A MOUNTING INSTRUCTIONS Dimensions in mm.5 9. 7.5. 3.8 5.8 Fig.. SOT44 : soldering pattern for surface mounting. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 9 Rev.