Date: 27.1.25 Data Sheet Issue: 2 Absolute Maximum Ratings Thyristor/Diode Modules M## 7 V RRM V DRM [V] MCC MCD MDC MCA MCK MCDA MDCA 12 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W 14 7-14io1W 7-14io1W 7-14io1W 7-14io1W 7-14io1W 7-14io1W 7-14io1W 16 7-16io1W 7-16io1W 7-16io1W 7-16io1W 7-16io1W 7-16io1W 7-16io1W 18 7-18io1W 7-18io1W 7-18io1W 7-18io1W 7-18io1W 7-18io1W 7-18io1W VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage 1) 12-18 V V DSM Non-repetitive peak off-state voltage 1) 12-18 V V RRM Repetitive peak reverse voltage 1) 12-18 V V RSM Non-repetitive peak reverse voltage 1) 13-19 V UNITS OTHER RATINGS MAXIMUM LIMITS I T(AV)M Maximum average on-state current, T water = 17 C, 4l/min 2) 847 A I T(AV)M Maximum average on-state current. T water = 42 C, 4l/min 2) 7 A I T(AV)M Maximum average on-state current. T water = 85 C, 4l/min 2) 398 A I T(RMS)M Nominal RMS on-state current, T water = 17 C, 4l/min 2) 1331 A I T(d.c.) D.C. on-state current, T water = 17 C, 4l/min 157 A I TSM Peak non-repetitive surge t p = 1 ms, V RM = 6%V RRM 3) 16.5 ka I TSM2 Peak non-repetitive surge t p = 1 ms, V RM 1V 3) 18.2 ka I 2 t I 2 t capacity for fusing t p = 1 ms, V RM = 6%V RRM 3) 1.36 1 6 A 2 s I 2 t I 2 t capacity for fusing t p = 1 ms, V RM 1 V 3) 1.66 1 6 A 2 s UNITS Critical rate of rise of on-state current (repetitive) 4) 15 A/µs (di/dt) cr Critical rate of rise of on-state current (non-repetitive) 4) 3 A/µs V RGM Peak reverse gate voltage 5 V P G(AV) Mean forward gate power 4 W P GM Peak forward gate power 3 W V ISOL Isolation Voltage 5) 35 V T vj op Operating temperature range -4 to +125 C T stg Storage temperature range -4 to +15 C Notes: 1) De-rating factor of.13% per C is applicable for T vj below 25 C. 2) Single phase; 5 Hz, 18 half-sinewave. 3) Half-sinewave, 125 C T vj initial. 4) V D = 67% V DRM, I FG = 2 A, t r.5µs, T vj = 125 C. 5) AC RMS voltage, 5 Hz, 1min test Data Sheet. Types M##7-12io1W and M##7-18io1W Page 1 of 12 January, 25
Thyristor Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS V TM Maximum peak on-state voltage - - 1.5 I TM = 17 A V V TM Maximum peak on-state voltage - - 1.17 I TM = 7 A V V T Threshold voltage - -.85 V r T Slope resistance - -.27 mω (dv/dt) cr Critical rate of rise of off-state voltage - - V D = 8% V DRM, linear ramp, Gate o/c V/µs I DRM Peak off-state current - - 7 Rated V DRM ma I RRM Peak reverse current - - 7 Rated V RRM ma V GT Gate trigger voltage - - 3. T vj = 25 C, V D = 1 V, I T = 3 A V I GT Gate trigger current - - 3 ma I H Holding current - - T vj = 25 C ma t gd Gate controlled turn-on delay time -.6 1.5 t gt Turn-on time - 1.2 2.5 I FG = 2 A, t r =.5 µs, V D = 67%V DRM, I TM = 2 A, di/dt = 1 A/µs, T vj = 25 C Q rr Recovered Charge - 22 - µc Q ra Recovered Charge, 5% chord - 16 19 I TM = A, t p = 1 ms, di/dt = 1A/µs, µc I rm Reverse recovery current - 12 - V R = 5 V A t rr Reverse recovery time, 5% chord - 25 - µs t q Turn-off time - 2 - - 3 - I TM = A, t p = 1 ms, di/dt = 1 A/µs, V R = 5 V, V DR = 8%V DRM, dv DR/dt = 2 V/µs I TM = A, t p = 1 ms, di/dt = 1 A/µs, V R = 5 V, V DR = 8%V DRM, dv DR/dt = 2 V/µs R thjw Thermal resistance, junction to water - -.9 Single Thyristor K/W F 1 Mounting force (to heatsink) 4.25-5.75 Nm F 2 Mounting force (to terminals) 1.2-13.8 2) Nm W t Weight - 1.5 - kg µs µs Diode Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS V FM Maximum peak forward voltage - - 1.9 I TM = 17 A V V T Threshold voltage - -.72 V r T Slope resistance - -.143 mω I RRM Peak reverse current - - 5 Rated V RRM ma Q rr Recovered Charge - 22 - µc Q ra Recovered Charge, 5% chord - 18 225 I TM = A, t p = 1ms, di/dt = 1 A/µs, µc I rm Reverse recovery current - 145 - V R = 5 V A t rr Reverse recovery time, 5% chord - 25 - µs Notes: 1) Unless otherwise indicated T vj=125 C. 2) Screws must be lubricated Data Sheet. Types M##7-12io1W and M##7-18io1W Page 2 of 12 January, 25
Notes on Ratings and Characteristics 1. Voltage Grade Table Voltage Grade V DRM V DSM V RRM V RSM V D V R V V DC V 12 12 13 82 14 14 15 93 16 16 17 14 18 18 19 115 2. Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3. De-rating Factor A blocking voltage de-rating factor of.13%/ C is applicable to this device for T vj below 25 C. 4. Repetitive dv/dt Standard dv/dt is V/µs. 5. Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6. Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 3A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 15A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7. Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 3V is assumed. This gate drive must be applied when using the full di/dt capability of the device. I GM 4A/µs I G t p1 The magnitude of I GM should be between five and ten times I GT, which is shown on page 2. Its duration (t p1 ) should be 2µs or sufficient to allow the anode current to reach ten times I L, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The back-porch current I G should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times I GT. Data Sheet. Types M##7-12io1W and M##7-18io1W Page 3 of 12 January, 25
8. Computer Modelling Parameters 8.1 Thyristor Dissipation Calculations I AV 2 VT + VT + = 2 2 ff 4 ff r T 2 r T W AV and: W AV T = R T = T th j max T K Where V T =.85 V, r T =.27 mω for the thyristor and V T =.72 V, r T =.143 mω for the diode. R th = Supplementary thermal impedance, see table below and ff = Form factor, see table below. Supplementary Thermal Impedance Conduction Angle 3 6 9 12 18 27 d.c. Square wave.976.955.942.933.92.97.9 Sine wave.95.933.924.917.92 Form Factors Conduction Angle 3 6 9 12 18 27 d.c. Square wave 3.464 2.449 2 1.732 1.414 1.149 1 Sine wave 3.98 2.778 2.22 1.879 1.57 8.2 Calculating thyristor V T using ABCD Coefficients The on-state characteristic I T vs. V T, on page 6 is represented in two ways; (i) the well established V T and r T tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V T in terms of I T given below: V T = A + B ln ( IT ) + C IT + D IT The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V T agree with the true device characteristic over a current range, which is limited to that plotted. 25 C Coefficients 125 C Coefficients A.786338 A -.99137717 B 9.92962 1-3 B.198738 C 1.9474 1-4 C 4.23812 1-4 D 7.49213 1-3 D -.145375 Data Sheet. Types M##7-12io1W and M##7-18io1W Page 4 of 12 January, 25
8.3 D.C. Thermal Impedance Calculation p = n t = p= 1 Where p = 1 to n n = number of terms in the series and t = Duration of heating pulse in seconds. r t = Thermal resistance at time t. r p = Amplitude of p th term. = Time Constant of r th term). τ p r r p 1 e t τ p The coefficients for this device are shown in the tables below: D.C. Term 1 2 3 4 5 r p.7972 3.6431 1-3 4.87795 1-3 1.91134 1-3 2.1646 1-3 τ p 4.46119.71394.6312 5.774 1-3 6.7258 1-3 9. Reverse recovery ratings (i) Q ra is based on 5% I RM chord as shown in Fig. 1 Fig. 1 (ii) Q rr is based on a 15 µs integration time i.e. (iii) K Factor = t t 1 2 Q rr = 15µ s i rr. dt Data Sheet. Types M##7-12io1W and M##7-18io1W Page 5 of 12 January, 25
Thyristor Curves Figure 1 On-state characteristics of Limit device Figure 2 Transient thermal impedance.1 Single Thyristor T j = 25 C T j = 125 C.1 Instantaneous On-state current - I TM (A) Thermal impedance (K/W).1.1.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state voltage - V TM (V).1.1.1.1.1.1 1 1 Time (s) Figure 3 Gate characteristics Trigger limits Figure 4 Gate characteristics Power curves 8 T j =25 C 35 T j =25 C 7 3 6 Max V G dc 25 Max V G dc Gate Trigger Voltage - V GT (V) 5 4 3 I GT, V GT Gate Trigger Voltage - V GT (V) 2 15 P G Max 3W dc 2 125 C 25 C -1 C -4 C 1 1 I GD, V GD Min V G dc 5 P G 4W dc Min V G dc.2.4.6.8 1 Gate Trigger Current - I GT (A) 2 4 6 8 1 Gate Trigger Current - I GT (A) Data Sheet. Types M##7-12io1W and M##7-18io1W Page 6 of 12 January, 25
Figure 5 Total recovered charge, Q rr Figure 6 Recovered charge, Q ra (5% chord) 2A 15A Recovered charge - Q rr (µc) A 5A Recovered charge - Q ra, 5% chord (µc) 2A 15A A 5A 1 1 1 1 Figure 7 Peak reverse recovery current, I rm. 2A 15A A 5A Figure 8 Maximum recovery time, t rr (5% chord) Reverse recovery current - I rm (A) Reverse recovery time (5% chord) - t rr (µs) 1 2A 15A A 5A. 1 1 1 1 1 Data Sheet. Types M##7-12io1W and M##7-18io1W Page 7 of 12 January, 25
Figure 9 On-state current vs. Power dissipation Sine wave Figure 1 On-state current vs. Heatsink temperature Sine wave 12 3 18 6 9 12 14 12 Maximum forward dissipation (W) 8 6 4 Maximum permissable heatsink temperature ( C) 8 6 4 2 2 3 6 9 12 18 2 4 6 8 Mean forward current (A) (Whole cycle averaged) Figure 11 On-state current vs. Power dissipation Square wave 2 4 6 8 Mean forward current (A) (Whole cycle averaged) Figure 12 On-state current vs. Heatsink temperature Square wave 12 14 12 Maximum forward dissipation (W) 8 6 4 d.c. 27 18 12 9 6 3 Maximum permissible heatsink temperature ( C) 8 6 4 2 2 3 6 9 12 18 27 d.c. 2 4 6 8 Mean Forward Current (Amps) (Whole Cycle Averaged) 2 4 6 8 Mean Forward Current (Amps) (Whole Cycle Averaged) Data Sheet. Types M##7-12io1W and M##7-18io1W Page 8 of 12 January, 25
Figure 13 Maximum surge and I 2 t Ratings Gate may temporarily lose control of conduction angle I 2 t: V RRM 1V 1.E+7 I 2 t: 6% V RRM Total peak half sine surge current (A) I TSM : V RRM 1V I TSM : 6% V RRM 1.E+6 Maximum I 2 t (A 2 s) T j (initial) = 125 C 1 3 5 1 1 5 1 5 Duration of surge (ms) Duration of surge (cycles @ 5Hz) 1.E+5 Figure 14 Average on-state current and Power loss Vs. Inlet water temperature Maximum average on-state current, I T(AV)M (A) Average Current Power Loss Total Power Loss (W) 1 2 3 4 5 6 7 8 9 Inlet water temperature, T water ( C) Data Sheet. Types M##7-12io1W and M##7-18io1W Page 9 of 12 January, 25
Diode Curves Figure 15 Total recovered charge, Q rr Figure 16 Recovered charge, Q ra (5% chord) 2A 15A Recovered charge - Q rr (µc) A 5A Recovered charge - Q ra, 5% chord (µc) 2A 15A A 5A 1 1 1 1 Figure 17 Peak reverse recovery current, I rm Figure 18 Maximum recovery time, t rr (5% chord) Reverse recovery current - I rm (A) 2A 15A A 5A Reverse recovery time (5% chord) - t rr (µs) 1 2A 15A A 5A 1 1 1 1 1 Data Sheet. Types M##7-12io1W and M##7-18io1W Page 1 of 12 January, 25
Figure 19 Instantaneous forward voltage V F 125 C Instantaneous forward current - I FM (A) 125 C.5 1 1.5 2 2.5 Maximum instantaneous forward voltage - V FM (V) Data Sheet. Types M##7-12io1W and M##7-18io1W Page 11 of 12 January, 25
Outline Drawing & Ordering Information 3 6 7 1 5 4 2 MCC 3 1 5 4 2 MCD 3 6 7 1 2 MDC 37 6 1 5 4 2 MCA 3 6 7 1 4 5 2 MCK 3 1 5 4 2 MCDA 15A113 3 7 6 1 2 MDCA ORDERING INFORMATION (Please quote 11 digit code as below) M ## / ### 7 io 1 W Fixed Type Code Configuration code CC, CD, DC, CA, CK, CDA, DCA Average Current Rating Voltage code V DRM/ 12-18 i = Critical dv/dt V/µs o = Typical turn-off time Order code: MCD7-14io1W MCD configuration, 14V V DRM, V RRM, water cooled base Fixed Version Code Water cooled base IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 626 53- Fax: +49 626 53-627 E-mail: marcom@ixys.de IXYS Corporation 354 Bassett Street Santa Clara CA 9554 USA Tel: +1 (48) 982 7 Fax: +1 (48) 496 67 E-mail: sales@ixys.net IXYS www.ixys.com WESTCODE An IXYS Company www.westcode.com Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 ()1249 444524 Fax: +44 ()1249 659448 E-mail: WSL.sales@westcode,com Westcode Semiconductors Inc 327 Cherry Avenue Long Beach CA 987 USA Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182 E-mail: WSI.sales@westcode.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH. In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. IXYS Semiconductor GmbH. Data Sheet. Types M##7-12io1W and M##7-18io1W Page 12 of 12 January, 25