N-Channel and P-Channel,2V,Small signal MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D1 G2 S2 MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A).3@ V GS =4.V N-Channel 2 5@ V GS =2.5V @ V GS =1.8V.9@ V GS =-4.5V P-Channel 1.2@ V GS =-2.5V -2 1.5@ V GS =-1.8V -.8 6 5 4 1 2 3 S1 G1 D2 N-Channel Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V DS 2 V Gate-Source Voltage V GS ±8 V Drain Current Total Power Dissipation Continuous I D A Pulsed I D 3. A T A =25 P D 17 mw T A =125 P D 155 mw Rev.6.1 1 www.prisemi.com
Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =25μA,V GS =V 2 - V Zero Gate Voltage Drain Current I DSS V DS =2V,V GS =V - - 1 μa Gate-Body Leakage Current I GSS V DS =V,V GS =±8V - - ±1 μa Gate Threshold Voltage V GS(th) V DS =V GS, I D =25μA.5 1.1 V V GS =4.V, I D =3mA -.3.5 Ω Static Drain-Source On-Resistance R DS(ON) V GS =2.5V, I D =2mA - 5.7 Ω V GS =1.8V, I D =15mA.9 Ω DYNAMIC PARAMETERS Input Capacitance C ISS - 135 pf Output Capacitance C DSS V GS =V, V DS =16V, f=1mhz - 23 pf Reverse Transfer Capacitance C RSS - 18 pf SWITCHING PARAMETERS Turn-On Delay Time t d(on) V DS =1V, V GS =4.5V, - 15 ns Turn-Off Delay Time t d(off) R G =1Ω, I D =A - 55 ns P-Channel Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V DS -2 V Gate-Source Voltage V GS ±8 V Drain Current Continuous I D -.8 A Pulsed I D -3 A Total Power Dissipation T A =25 P D 25 mw T A =125 P D 2 mw Rev.6.1 2 www.prisemi.com
Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =-25μA,V GS =V -2 - - V Zero Gate Voltage Drain Current I DSS V DS =2V,V GS =V - - -1 μa Gate-Body Leakage Current I GSS V DS =V,V GS =±1V - - ±1 ua Gate Threshold Voltage V GS(th) V DS =V GS, I D =-25μA -.5-1.1 V V GS =-4.5V, I D =-2mA -.9 1.2 Ω Static Drain-Source On-Resistance R DS(ON) V GS =-2.5V, I D =-1mA - 1.2 1.5 Ω V GS =-1.8V, I D =-1mA 1.5 2.2 Ω Forward Tran conductance g FS V GS =5V, I D =5mA, T A =125 6.5 S DYNAMIC PARAMETERS Input Capacitance C ISS - 2 pf Output Capacitance C DSS V GS =V, V DS =-6V, f=2kmhz - 8 pf Reverse Transfer Capacitance C RSS - 15 pf SWITCHING PARAMETERS Turn-On Delay Time t d(on) V DD =-6V, V GS =-4.5V, - 17 ns Turn-Off Delay Time t d(off) R L =6Ω, R G =6Ω, I D =-1A - 65 ns N-Channel Typical Characteristics 1 1 8 V GS =2.5V 8 T=25 C 6 4 V GS =2.V 6 4 T=55 C T=125 C 2 V GS =1.5V 2.5 1. 1.5 2. 2.5 3. 3.5 4. Fig 1. Output Characteristics.5 1. 1.5 2. 2.5 3. V GS Gate to Source Voltage (V) Fig 2. Transfer Characteristics Rev.6.1 3 www.prisemi.com
8 rds(on) On-Resistance (Ω).5.3.1 V GS =1.8V V GS =2.5V V GS =4.5V C Capacitance (pf) 6 4 2 C iss C Oss 2 4 6 8 1 I D Drain Current (A) Fig 3. On-Resistance vs. Drain Current C Rss 4 8 12 16 2 Fig 4. Capacitance P-Channel Typical Characteristics 1. 1..8 V GS =2.5V.8 T=25 C V GS =2.V T=55 C T=125 C V GS =1.5V.5 1. 1.5 2. 2.5 3. 3.5 4. Fig 1. Output Characteristics.5 1. 1.5 2. 2.5 3. V GS Gate to Source Voltage (V) Fig 2. Transfer Characteristics Rev.6.1 4 www.prisemi.com
V GS =-4.5V 8 RDS(on) Drain-to-Source Resistance(Ω).5.3.1 T J =125 T J =25 T J =-55 C Capacitance (pf) 6 4 2 C iss C Oss I D Drain Current (A) Fig 3. On-Resistance vs. Drain Current C Rss 4 8 12 16 2 Fig 4. Capacitance Product dimension (SOT-363) A (6) C B (1) D E H F G Rev.6.1 5 www.prisemi.com
Dim Millimeters Inches MIN MAX MIN MAX A 2. 2.2 79 87 B 1.15 1.35 45 53 C 2.15 2.45 85 96 D 5BSC 26BSC E.15.35 6 14 F.9 1.1 35 43 G.1 4 H 8.15 3 6 Rev.6.1 6 www.prisemi.com
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