BC87UPN NPN Silicon AF Transistor Array For AF stages and driver applications High current gain Low collectoremitter saturation voltage 4 6 Two (galvanic) internal isolated NPN/PNP transistors in one package Pbfree (RoHS compliant) package Qualified according AEC Q Tape loading orientation C B E 6 4 Top View 6 4 Marking on SC74 package (for example Ws) corresponds to pin of device TR TR Ws Position in tape: pin opposite of feed hole side E B C EHA777 Direction of Unreeling SC74_Tape Type Marking Pin Configuration Package BC87UPN Bs =E =B =C 4=E =B 6=C SC74 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO 4 V Collectorbase voltage V CBO Emitterbase voltage V EBO Collector current I C ma Peak collector current, t p ms I CM Base current I B Peak base current I BM Total power dissipation P tot mw T S C Junction temperature T j C Storage temperature T stg 6... 9
BC87UPN Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs K/W Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO 4 V I C = ma, I B = Collectorbase breakdown voltage V (BR)CBO I C = µa, I E = Emitterbase breakdown voltage I E = µa, I C = V (BR)EBO Collectorbase cutoff current V CB = V, I E = V CB = V, I E =, T A = C Emitterbase cutoff current V EB = 4 V, I C = DC current gain ) I C = ma, V CE = V I C = ma, V CE = V Collectoremitter saturation voltage ) I C = ma, I B = ma Base emitter saturation voltage ) I C = ma, I B = ma I CBO µa. I EBO na h FE 6 4 V CEsat.7 V V BEsat. AC Characteristics Transition frequency I C = ma, V CE = V, f = MHz Collectorbase capacitance f = MHz, V BE = V Emitterbase capacitance V EB =. V, f = MHz f T 7 MHz C cb 6 pf C eb 6 For calculation of R thja please refer to Application Note AN77 (Thermal Resistance Calculation) Pulse test: t < µs; D < % 9
BC87UPN DC current gain h FE = ƒ(i C ) V CE = V Collectoremitter saturation voltage I C = ƒ(v CEsat ), h FE = BC 87/88 EHP Ι C ma C C C hfe C 8 C 6 C C 4 C 4 A I C..4.6 V.8 V CEsat Baseemitter saturation voltage I C = ƒ(v BEsat ), h FE = Collector cutoff current I CBO = ƒ(t A ) V CBO = V BC 87/88 EHP BC 87/88 EHP Ι C ma C C C na Ι CBO 4 max typ... V 4. C V BEsat T A 9
BC87UPN Transition frequency f T = ƒ(i C ) V CE = parameter in V, f = GHz Collectorbase capacitance C cb = ƒ(v CB ) Emitterbase capacitance C eb = ƒ(v EB ) f T MHz BC 87/88 EHP8 6 pf CCB/CEB 4 4 CEB ma Total power dissipation P tot = ƒ(t S ) Ι C CCB 4 6 8 4 6 V V CB /V EB Permissible Pulse Load R thjs = ƒ(t p ) 4 mw K/W Ptot RthJS D=....... 4 6 8 C T S 6 4 s t p 4 9
BC87UPN Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D=....... 6 4 s t p 9
Package SC74 BC87UPN Package Outline.9 ±. (.) B (.) +...6. MAX. Pin marking 6 4 +....9.9. M B 6x ±. ±... MAX.. M A MAX.. MAX..6 A ±. Foot Print..9.9.9 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer, June Date code (Year/Month) Pin marking Laser marking BCW66H Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel For symmetric types no defined Pin orientation in reel. 4..7 8 Pin marking.. 6 9
BC87UPN Edition 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 9