Transient grating measurements of spin diffusion. Joe Orenstein UC Berkeley and Lawrence Berkeley National Lab

Similar documents
Persistent spin helix in spin-orbit coupled system. Joe Orenstein UC Berkeley and Lawrence Berkeley National Lab

arxiv:cond-mat/ v1 [cond-mat.mes-hall] 1 Dec 2005

Nature, Vol 458, 2009 Leon Camenzind FMM University of Basel,

Anisotropic spin splitting in InGaAs wire structures

All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes.

Datta-Das type spin-field effect transistor in non-ballistic regime

Physics of Semiconductors

Decay of spin polarized hot carrier current in a quasi. one-dimensional spin valve structure arxiv:cond-mat/ v1 [cond-mat.mes-hall] 10 Oct 2003

Recent developments in spintronic

Spin Transport in III-V Semiconductor Structures

SUPPLEMENTARY INFORMATION

Spin relaxation of conduction electrons Jaroslav Fabian (Institute for Theoretical Physics, Uni. Regensburg)

Christian Scheller Physical Review Letters PRL 100, (2008)

Spin-orbit Effects in Semiconductor Spintronics. Laurens Molenkamp Physikalisches Institut (EP3) University of Würzburg

Supplementary Figures

Nuclear spin spectroscopy for semiconductor hetero and nano structures

Coupled spin-charge drift-diffusion approach for a two-dimensional electron gas with Rashba spin-orbit coupling

Lecture I. Spin Orbitronics

Non-traditional methods of material properties and defect parameters measurement

Electron spins in nonmagnetic semiconductors

arxiv: v1 [cond-mat.mes-hall] 20 Sep 2013

Tunable spin Hall effect by Stern-Gerlach diffraction

Expecting the unexpected in the spin Hall effect: from fundamental to practical

Electronic and Optoelectronic Properties of Semiconductor Structures

Saroj P. Dash. Chalmers University of Technology. Göteborg, Sweden. Microtechnology and Nanoscience-MC2

High-Speed Quadratic Electrooptic Nonlinearity in dc-biased InP

Coherence control of electron spin currents in semiconductors

Chapter 3 Properties of Nanostructures

Electromagnetically Induced Transparency (EIT) via Spin Coherences in Semiconductor

SUPPLEMENTARY INFORMATION

Semiclassical formulation

Overview of Spintronics and Its place in the Semiconductor Industry Roadmap

Nanoscience, MCC026 2nd quarter, fall Quantum Transport, Lecture 1/2. Tomas Löfwander Applied Quantum Physics Lab

.O. Demokritov niversität Münster, Germany

What is Quantum Transport?

Correlated 2D Electron Aspects of the Quantum Hall Effect

arxiv: v2 [cond-mat.mes-hall] 14 Jul 2009

Cavity decay rate in presence of a Slow-Light medium

arxiv: v1 [cond-mat.mes-hall] 19 Dec 2008

Manipulation of Persistent Spin Helix States by Weak External Magnetic Fields

Lecture 14 Dispersion engineering part 1 - Introduction. EECS Winter 2006 Nanophotonics and Nano-scale Fabrication P.C.Ku

Electrical spin-injection into semiconductors

Correlated 2D Electron Aspects of the Quantum Hall Effect

Introduction to Spintronics and Spin Caloritronics. Tamara Nunner Freie Universität Berlin

Multidimensional femtosecond coherence spectroscopy for study of the carrier dynamics in photonics materials

Observation of electric current induced by optically injected spin current

Optically induced Hall effect in semiconductors

Optical Spectroscopy of Advanced Materials

Laser Diodes. Revised: 3/14/14 14: , Henry Zmuda Set 6a Laser Diodes 1

Transverse spin-orbit force in the spin Hall effect in ballistic semiconductor wires

Effects of Quantum-Well Inversion Asymmetry on Electron- Nuclear Spin Coupling in the Fractional Quantum Hall Regime

Mean field theories of quantum spin glasses

Experimental discovery of the spin-hall effect in Rashba spin-orbit coupled semiconductor systems

Carbon based Nanoscale Electronics

Narrow-Gap Semiconductors, Spin Splitting With no Magnetic Field and more.. Giti Khodaparast Department of Physics Virginia Tech

Time Resolved Faraday Rotation Measurements of Spin Polarized Currents in Quantum Wells

Mesoscopic Spin Hall Effect in Multiprobe Semiconductor Bridges

Probing Wigner Crystals in the 2DEG using Microwaves

Influence of dephasing on the quantum Hall effect and the spin Hall effect

Interference of magnetointersubband and phonon-induced resistance oscillations in single GaAs quantum wells with two populated subbands

Electrical transport near a pair-breaking superconductor-metal quantum phase transition

NONLOCAL TRANSPORT IN GRAPHENE: VALLEY CURRENTS, HYDRODYNAMICS AND ELECTRON VISCOSITY

Quantum transport in nanoscale solids

arxiv:cond-mat/ v1 [cond-mat.other] 5 Jun 2004

wire z axis Under these assumptions, if we model the electrons by plane waves in the z direction we get n E, n, 1,2,

Investigation of Optical Nonlinearities and Carrier Dynamics in In-Rich InGaN Alloys

5.74 Introductory Quantum Mechanics II

Quantum Transport in Ballistic Cavities Subject to a Strictly Parallel Magnetic Field

Spin transverse force on spin current in an electric field

Coupling of heat and spin currents at the nanoscale in cuprates and metallic multilayers

SEMICONDUCTOR SPINTRONICS FOR QUANTUM COMPUTATION

Electrical Transport. Ref. Ihn Ch. 10 YC, Ch 5; BW, Chs 4 & 8

Fe 1-x Co x Si, a Silicon Based Magnetic Semiconductor

Fabrication and Measurement of Spin Devices. Purdue Birck Presentation

Mesoscopic Spintronics

Mesoscopic physics: normal metals, ferromagnets, and magnetic semiconductors

Citation for published version (APA): Filip, A. T. (2002). Spin polarized electron transport in mesoscopic hybrid devices s.n.

Electrically Driven Polariton Devices

Vortices and superfluidity

S. Blair February 15,

Ultrasensitive Atomic Magnetometers

Title: Ultrafast photocurrent measurement of the escape time of electrons and holes from

Physics 2, 50 (2009) Spintronics without magnetism. David Awschalom Department of Physics, University of California, Santa Barbara, CA 93106, USA

Microcavity Exciton-Polariton

Supported by NSF and ARL

ac ballistic transport in a two-dimensional electron gas measured in GaAs/ AlGaAs heterostructures

Out-of-equilibrium electron dynamics in photoexcited topological insulators studied by TR-ARPES

Spin orbit interaction induced spin-separation in platinum nanostructures

Influence of hyperfine interaction on optical orientation in self-assembled InAs/GaAs quantum dots

X-ray Photon Correlation Spectroscopy (XPCS) at Synchrotron and FEL sources

Introduction to Theory of Mesoscopic Systems

Ch/ChE 140a Problem Set #3 2007/2008 SHOW ALL OF YOUR WORK! (190 Points Total) Due Thursday, February 28 th, 2008

Limitations in the Tunability of the Spin Resonance of 2D Electrons in Si by an Electric Current

ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS

Lecture 3 Semiconductor Physics (II) Carrier Transport

arxiv:cond-mat/ v1 [cond-mat.mes-hall] 14 Jan 1999

MANY-BODY CONTRIBUTIONS TO SPIN RELAXATION IN SEMICONDUCTORS

Minimal Update of Solid State Physics

arxiv:cond-mat/ v1 [cond-mat.mes-hall] 26 Sep 2001

Supporting Materials

Transcription:

Transient grating measurements of spin diffusion Joe Orenstein UC Berkeley and Lawrence Berkeley National Lab

LBNL, UC Berkeley and UCSB collaboration Chris Weber, Nuh Gedik, Joel Moore, JO UC Berkeley and LBNL Jason Stephens and David Awschalom Center for Spintronics and Quantum Computation UCSB

Outline Spin diffusion in the presence of Rashba interaction Measuring spin diffusion optically: transient spin grating Experimental results in n-gaas QW: observation of spin Coulomb drag Anomalous wavevector dependent spin relaxation

Interest in spin transport Datta-Das transistor Datta, S. & Das, B. Applied Physics Letters 56, 665-7 (1990). S B eff ( k ) k One-dimensional spin transport Burkov, A., Nunez, A., & MacDonald, A. Cond-mat 0311328 (2003) perfect correlation of precession with spatial motion Spin-packet drift Kikkawa, J. M. & Awschalom, D. D. Nature 397, 139-41 (1999). Δx (μm)

Interest in spin transport Spin-Hall effect Kato, Y. K., Myers, R. C., Gossard, A. C. & Awschalom, D. D. Science 306, 1910-13 (2004). Wunderlich, J., Kaestner, B., Sinova, J. & Jungwirth, T. Physical Review Letters 94, 047204/1-4 (2005).

Virtually no measurements of spin diffusion coefficients in doped semiconductors

Spin vs. charge currents Charge Spin j c = qv v j s = σ v z j s = σ v v z v

Spin diffusion and relaxation Spin diffusion can be defined when: τ s τ coll Usually modeled by diffusion eq. with loss term: 2 sz sz Ds sz + = t τ Decay rate of a fluctuation with wavevector q: s γ 2 q s s = Dq + 1/ τ This ignores spin-spatial correlations embodied in DP spin relaxation!

D yakonov-perel relaxation and spin-spatial correlations Δ S S =Ω int τ S B int ( k) Each scattering event changes precession axis of spin Interrupted precession about effective field Analogous to motional narrowing 2 DP regime: Ωintτ 1 = Ωintτ τ 1 s

Perfect spin-spatial correlation in 1D z Ω int V Drift L = Ω 2π vf int x Relaxation of S z and S x are now coupled for nonzero q q c =Ω int /v F is crossover wavevector

Dispersion of coupled S z and S x relaxation modes Spin fluctuation with wavevector Ω int /v F has infinite lifetime!

Anomalous relaxation in 2-dimensions γ q τ s 10 8 6 4 2 Γ + Dq 2 Γ Freitsov Burkov, Nunez, MacDonald Relaxation rate predicted to slow at critical wavevector, but not to zero. 0 0 1 2 3 4 5 6 qv F /Ω SO

Transient spin gratings Ideal for measurement of wavevector dependence of spin relaxation rate Interference of two orthogonally polarized beams. Creates a helicity wave which generates a spin density wave. Cameron et al., Phys. Rev. Lett. 76, 4793 (1996)

Probing diffusion and relaxation: the transient grating technique Pump beams Probe beam transmitted Amplitude of diffracted beam diffracted Time delay

Probing diffusion and relaxation: the transient grating technique Pump beams Probe beam transmitted Amplitude of diffracted beam diffracted Time delay

Probing diffusion and relaxation: the transient grating technique Pump beams Probe beam transmitted Amplitude of diffracted beam diffracted Time delay

Technical innovations Phase mask array for rapid variation of q Phase-modulated heterodyne detection of diffracted wave N.Gedik and J. Orenstein, Optics Letters, 29, 2109 (2004).

Phase mask array

Heterodyne detection of the spin grating

Heterodyne detection of the spin grating Oscillating cover slip provides rapid scan of relative phase

Demonstration of coherent heterodyne detection

Quantum well samples 10-layer, modulationdoped quantum well Al 0.3 Ga 0.7 As GaAs (12nm) + + + + n [10 11 cm -2 ] T F [K] μ [cm 2 /Vs] 7.8 400 230,000 4.3 220 93,000 1.9 100 70,000 Si in barrier layer

Grating decay for different wavevectors at room temperature Spin polarization 1 14 μm 4.8 μm 3.5 μm 2.5 μm n [10 11 cm -2 ] 7.8 4.3 1.9 0.1 0 20 40 60 80 Time [ps]

Grating decay rate proportional to q 2 Dispersion shows no evidence of of spinspatial correlations at room temperature 0.12 0.10 0.08 D s =120 cm 2 /s γ (ps -1 ) 0.06 0.04 0.02 0.00 0 1 2 3 4 5 6 7 q 2 (x 10 8 cm -2 )

Grating decay rate vs. T (for different grating wavelengths) 10 0 γ (ps -1 ) 10-1 2.5 μ 3.5 μ 4.8 μ 14 μ 10-2 0 100 200 300 T (K)

Ballistic/diffusive crossover γ q 5 K q 295 K γ 2 q q

Ballistic regime: S z oscillates at low T At low T, the mean-free-path becomes comparable to the grating period 0.6 Spin polarization 0.4 0.2 0.0 0 10 20 30 Time [ps]

T-dependence of ballistic oscillations From fit of theory (JEM) to data we obtain D s in the ballistic regime as well 5 K 13 K 29 K 1.8 μm 1.5 μm 1.5 μm TG (a.u.) 51 K 67 K 91 K 1.0 μm 0.7 μm 0.5 μm 0 5 10 0 5 10 0 5 10 Time (ps)

Spin diffusion coefficient 3 D s (1000 cm 2 /s) 2 1 n-gaas QW n=7.8 10 11 cm -2 0 0 50 100 150 200 250 300 T (K)

If scattering processes determining spin and charge conductivities are the same D = fd s c0 where f χ χ 0 s σ c, and Dc 0 2 e χ0 D c 0 = μe B F μ kt e e for T << T F for T >> T F

Comparison of spin and charge diffusion coefficients 6 D (1000 cm 2 /s) 5 4 3 2 1 D s /D c 0.4 0.2 0.0 0 100 200 T (K) 0 0 50 100 150 200 250 300 T (K)

Comparison of spin and charge diffusion coefficients 6000 1500 7.8 E11 cm -2 4.3 E11 1.9 E11 600 D (cm 2 /s) 4000 2000 D (cm 2 /s) 1000 500 D (cm 2 /s) 400 200 0 0 100 200 300 T (K) 0 0 100 200 300 T (K) 0 0 100 200 300 T (K)

Spin Coulomb drag (D Amico &Vignale) e-e collisions affect spin current, not charge current J spin J c J spin e-e collisions conserve total momentum, but exchange momentum between spin up and spin down populations.

Drag leads to different D s for spin and charge n + n D = σ / χ c c c n n χ 0 Dc 0 Ds = 1+ χ ρ ρ s spin Drag resistance

Spin drag resistance is large for high mobility 2DEG s ρ (kω) 1.5 1.0 0.5 ρ (scd theory) ρ c (measured) I. D Amico and G. Vignale, Phys. Rev. B 68, 45307 (2001) ρ depends only on n, T 0.0 0 100 200 300 T (K)

Testing the D Amico Vignale prediction D = χ D 0 s c0 χs 1 1+ ρ ρ D D c0 s χ 0 or s = + χ ( 1 ρ ρ ) Zero-free parameter theory Directly from experiment

Direct comparison with theory 8 6 χ s > χ 0 D c 0 / D S 4 2 0 0 1 2 3 4 5 ρ / ρ 7.8 E11 cm -2 4.3 E11 1.9 E11 7.8 E11 (disordered)

Comparison of diffusion coefficients: no free parameters! 6000 1500 7.8 E11 cm -2 4.3 E11 1.9 E11 600 D (cm 2 /s) 4000 2000 D (cm 2 /s) 1000 500 D (cm 2 /s) 400 200 0 0 100 200 300 T (K) D s 0 0 100 200 300 T (K) = χ 0 c0 χ 1 + ρ / ρ s D 0 0 100 200 300 T (K)

Advantage of spin Coulomb drag: how far can spin packet drift in E- field before spreading? L D n n w L w D = eew D c εf Ds Enhancment due to spin Coulomb drag

L SO = 1.5 μm, independent of n, T 1.5 1.0 L = Dτ S s s 0.5 0.0 1.5 7.8 E11 cm -2 Spin relaxation rate (q=0) Diffusion coefficient L s (μ) 1.0 0.5 0.0 1.5 1.0 4.3 E11 γ (ps -1 ) 10-1 10-2 D (cm 2 /s) 10 3 10 2 0.5 1.9 E11 0.0 0 100 200 300 T (K) 0 100 200 300 T (K) 0 100 200 300 T (K)

L SO as a function of n,t L S = D γ S S 10-1 10 3 L s (μ) γ (ps -1 ) 10-2 D (cm 2 /s) 10 2 0 100 200 300 T (K) 0 100 200 300 T (K) 0 100 200 300 T (K)

Disordered quantum well samples Quantum wells with varying fraction of dopant in the well Al 0.3 Ga 0.7 As GaAs + + + + + + n [10 11 cm -2 ] T F [K] μ [cm 2 /Vs] 7.8 400 230,000 4.3 220 93,000 1.9 100 70,000 7.8 400 3,000

Disordered sample at 295 K 0.15 0.10 γ (ps -1 ) 0.05 0.00 0 2 4 6 8 10 q 2 (10 8 cm -2 )

Ballistic/diffusive crossover γ q 5 K q 295 K γ 2 q q

Anomalous q-dependence at low T 0.15 0.10 γ (ps -1 ) 0.05 0.00 0 2 4 6 8 10 q 2 (10 8 cm -2 )

2D dispersion in presence of spin-orbit, but with adjustable parameter: D Ω τ v 2 2 s SO s F

Conclusions Heterodyne transient grating technique successfully probes spin transport in ps time regime spin Coulomb drag observed Anomalous (non-diffusive) relaxation at low T