PNP Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary type: BCX4 (NPN) Pbfree (RoHS compliant) package Qualified according AEC Q Type Marking Pin Configuration Package BCX4 DKs = B = E = C SOT Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO V Collectorbase voltage V CBO Emitterbase voltage V EBO Collector current I C 8 ma Peak collector current, t p ms I CM A Base current I B ma Peak base current I BM Total power dissipation T S 79 C P tot mw Junction temperature T j C Storage temperature T stg 6... Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs K/W For calculation of R thja please refer to Application Note AN77 (Thermal Resistance Calculation) 4
Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage I C = ma, I B = Collectorbase breakdown voltage I C = µa, I E = Emitterbase breakdown voltage I E = µa, I C = Collectorbase cutoff current V CB = V, I E = V CB = V, I E =, T A = C V (BR)CEO V V (BR)CBO V (BR)EBO I CBO. µa Collectoremitter cutoff current V CE = V, T A = 8 C V CE = V, T A = C Emitterbase cutoff current V EB = 4 V, I C = DC current gain ) I C = µa, V CE = V I C = ma, V CE = V I C = ma, V CE = V Collectoremitter saturation voltage ) I C = ma, I B = ma Base emitter saturation voltage ) I C = ma, I B = ma AC Characteristics Transition frequency I C = ma, V CE = V, f = MHz Collectorbase capacitance V CB = V, f = MHz I CEO 7 I EBO na h FE 6 4 V CEsat.9 V V BEsat.4 f T MHz C cb pf Pulse test: t < µs; D < % 4
DC current gain h FE = ƒ(i C ) V CE = V Collectoremitter saturation voltage I C = ƒ(v CEsat ), h FE = BCX 4/BSS 6 EHP4 BCX 4/BSS 6 EHP4 ma h FE C C C C C C ma Baseemitter saturation voltage I C = ƒ(v BEsat ), h FE = 4 6 mv 8 Collector current I C = ƒ(v BE ) V CE = V V CE sat ma BCX 4/BSS 6 EHP4 ma BCX 4/BSS 6 EHP49 Ι C C C C T A = C C C V V BE sat V V BE 4
Collector cutoff current I CBO = ƒ(t A ) V CBO = V Transition frequency f T = ƒ(i C ) V CE = parameter in V, f = GHz na 4 BCX 4/BSS 6 EHP44 MHz BCX 4/BSS 6 EHP4 B max f T typ C Collectorbase capacitance C cb = ƒ(v CB ) Emitterbase capacitance C eb = ƒ(v EB ) T A ma Total power dissipation P tot = ƒ(t S ) pf 9 4 mw CCB(CEB) 7 6 Ptot 4 CEB CCB 4 8 6 V V CB (V EB 4 6 7 9 C T S 4 4
Total power dissipation P tot = ƒ(t S ) P P tot max tot DC BCX 4/BSS 6 t p = D T t p T EHP4 D =....... 6 4 s t p 4
Package SOT BCX4 Package Outline +. ).4..9 ±..9 B C.9.4 ±.. MIN. MAX. ±.. MAX....8 MAX..8.... ±. A. M BC. M A Foot Print ) Lead width can be.6 max. in dambar area.8.8..9..9 Marking Layout (Example) EH s Manufacturer, June Date code (YM) Pin BCW66 Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.9. 8..6 Pin.. 6 4
Edition 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 4