Features Logic Level Input Input Protection (ESD) =Thermal shutdown with latch Overload protection Short circuit protection Overvoltage protection Current limitation Status feedback with external input resistor Analog driving possible AEC qualified Green product (RoHS compliant) Product Summary Drain source voltage V DS 6 V Onstate resistance R DS(on) 1 mω Current limit I D(lim) 7 A Nominal load current I D(ISO) 3.5 A Clamping energy E AS 1 mj Application All kinds of resistive, inductive and capacitive loads in switching or linear applications μc compatible power switch for 12 V and 24 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS chip on chip technology. Providing embedded protection functions. V bb + LOAD M 1 IN dv/dt limitation Current limitation Overvoltage protection Drain 2 ESD Overload protection Overprotection temperature Short Short circuit circuit protection Source 3 HITFET Datasheet 1 Rev. 1.4, 212711
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol Value Unit Drain source voltage V DS 6 V Drain source voltage for short circuit protection V DS(SC) 32 Continuous input current 1) I IN ma.2v V IN 1V V IN <.2V or V IN > 1V no limit I IN 2 Operating temperature T j 4... +15 C Storage temperature T stg 55... +15 Power dissipation P tot 5 W T C = 25 C Unclamped single pulse inductive energy E AS 1 mj I D(ISO) = 3.5 A Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 315.7 and EOS/ESD assn. standard S5.1 1993 V ESD 3 V Load dump protection V 2) LoadDump = V A + V S V IN =low or high; V A =13.5 V t d = 4 ms, R I = 2 Ω, I D =,5*3.5A t d = 4 ms, R I = 2 Ω, I D = 3.5A V LD 75 7 Thermal resistance junction case: R thjc 2.5 K/W junction ambient: R thja 75 SMD version, device on PCB: 3) R thja 45 1In case of thermal shutdown a minimum sensor holding current of 5 μa has to be guaranteed (see also page 3). 2 VLoaddump is setup without the DUT connected to the generator per ISO 76371 and DIN 4839 3 Device on 5mm*5mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 7μm thick) copper area for Drain connection. PCB mounted vertical without blown air. Datasheet 2 Rev. 1.4, 212711
Electrical Characteristics Parameter Symbol Values Unit at T j =25 C, unless otherwise specified min. typ. max. Characteristics Drain source clamp voltage V DS(AZ) 6 73 V T j = 4...+ 15 C, I D = 1 ma Off state drain current I DSS 5 μa V DS = 32 V, T j = 4...+15 C, V IN = V Input threshold voltage V IN(th) 1.3 1.7 2.2 V I D =.7 ma Input current normal operation, I D <I D(lim) : IIN(1) 3 6 μa V IN = 1 V Input current current limitation mode, I D =I D(lim) : I IN(2) 12 3 V IN = 1 V Input current after thermal shutdown, I D = A: I IN(3) 8 22 4 V IN = 1 V Input holding current after thermal shutdown 1) I IN(H) T j = 25 C T j = 15 C 5 3 Onstate resistance R DS(on) mω V IN = 5 V, I D = 3.5 A, T j = 25 C V IN = 5 V, I D = 3.5 A, T j = 15 C 9 18 12 24 Onstate resistance R DS(on) V IN = 1 V, I D = 3.5 A, T j = 25 C V IN = 1 V, I D = 3.5 A, T j = 15 C 8 16 1 2 Nominal load current (ISO 1483) V IN = 1 V, V DS =.5 V, T C = 85 C I D(ISO) 3.5 A 1If the input current is limited by external components, low drain currents can flow and heat the device. Auto restart behaviour can occur. Datasheet 3 Rev. 1.4, 212711
Electrical Characteristics Parameter Symbol Values Unit at T j =25 C, unless otherwise specified min. typ. max. Characteristics Initial peak short circuit current limit V IN = 1 V, V DS = 12 V Current limit 1) V IN = 1 V, V DS = 12 V, t m = 35 μs, T j = 4...+15 C I D(SCp) 25 A I D(lim) 7 1 15 Dynamic Characteristics Turnon time V IN to 9% I D : R L = 4.7 Ω, V IN = to 1 V, V bb = 12 V Turnoff time V IN to 1% I D : R L = 4.7 Ω, V IN = 1 to V, V bb = 12 V Slew rate on 7 to 5% V bb : R L = 4.7 Ω, V IN = to 1 V, V bb = 12 V Slew rate off 5 to 7% V bb : R L = 4.7 Ω, V IN = 1 to V, V bb = 12 V t on 4 7 μs t off 7 15 dv DS /dt on 1 3 V/μs dv DS /dt off 1 3 Protection Functions 2) Thermal overload trip temperature T jt 15 165 C Unclamped single pulse inductive energy E AS mj I D = 3.5 A, T j = 25 C, V bb = 32 V I D = 3.5 A, T j = 15 C, V bb = 32 V 1 225 Inverse Diode Inverse diode forward voltage I F = 5*3.5A, t m = 3 μs, V IN = V V SD 1 V 1Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 5 μs. 2 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Datasheet 4 Rev. 1.4, 212711
Block Diagramm Terms Inductive and overvoltage output clamp R L V Z D I IN 1 IN HITFET D 2 I D VDS V bb S V IN S 3 HITFET Input circuit (ESD protection) Short circuit behaviour V IN IN I D(SCp) ESDZD I I D I D(Lim) Source ESD zener diodes are not designed for DC current > 2 ma @ V IN >1V. t tm t 1 t 2 t : Turn on into a short circuit t m : Measurementpoint for I D(lim) t 1 : Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t 2 : Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Datasheet 5 Rev. 1.4, 212711
Maximum allowable power dissipation P tot = f(t c ) Onstate resistance R ON = f(t j ); I D =3.5A; V IN =1V 55 W BTS 117 2 Ω 45 Ptot 4 35 RDS(on) 15 125 max. 3 25 2 15 1 5 1 75 5 25 typ. 2 4 6 8 1 12 C 16 15 Onstate resistance R ON = f(t j ); I D = 3.5A; V IN =5V 5 25 25 5 75 1 C 15 T j Typ. input threshold voltage V IN(th) = f(t j ); I D =.7mA; V DS =12V 25 Ω 2. V 2 1.6 RDS(on) 175 15 max. VIN(th) 1.4 1.2 125 1. 1 75 typ..8.6 5.4 25.2 5 25 25 5 75 1 C 15 T j. 5 25 25 5 75 1 C 15 T j Datasheet 6 Rev. 1.4, 212711
Typ. transfer characteristics I D = f(v IN ); V DS =12V; T j =25 C Typ. output characteristic I D = f(v DS ); T j =25 C 1 A Parameter: V IN 1 A 1V 6V 5V 4V ID 6 ID 6 4 4 Vin=3V 2 2 1 2 3 4 5 6 V 8 1 2 3 4 V 6 Transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T 1 1 V IN V DS K/W RthJC 1 D=.5.2.1 1 1.5.2 1.1.5 2 1 7 1 6 1 5 1 4 1 3 1 2 1 1 1 s t P 1 2 Datasheet 7 Rev. 1.4, 212711
Application examples: Status signal of thermal shutdown by monitoring input current R St μc V IN IN D HITFET S V bb V IN Δ V thermal shutdown ΔV = R ST *I IN(3) Datasheet 8 Rev. 1.4, 212711
Package Outlines 1 Package Outlines 1 ±.2 9.9 ±.2 8.5 1) 3.7.15 ±.2 2.8 A B 1.27±.1 4.4 17±.3 15.65±.3 1) 12.95...3.5 2.4 9.25 ±.2 C 4.55 ±.2 13.5 ±.5 1)...15 3x.75 ±.1 2.4 1.5 2x 2.54.25 M A B C Typical All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3.5 ±.1 Figure 1 PGTO2231 To meet the worldwide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHSCompliant (i.e Pbfree finish on leads and suitable for Pbfree soldering according to IPC/JEDEC JSTD2). You can find all of our packages, sorts of packing and others in our Infineon Internet Page Products : http://www.infineon.com/products. Dimensions in mm Datasheet 9 Rev. 1.4, 212711
Revision History 2 Revision History Version Date Changes Rev. 1.4 212711 released through hole automotive green Datasheet Package drawing update, removed staggered package added through hole version in green package Rev. 1.3 28121 Package drawing update Rev. 1.2 28811 Package information updated, removed through hole version Rev. 1.1 28222 Package parameter (humidity and climatic) removed in Maximum ratings AEC icon and RoHS icon added Green product and AEC qualified added to feature list added Protection footnote on Page 4 and changed front page general description Package infromation updated to green Green explanation added Rev. 1. 2519 released production version Datasheet 1 Rev. 1.4, 212711
Edition 212711 Published by Infineon Technologies AG 81726 Munich, Germany Infineon Technologies AG 212. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.