BDP97_BDP99_BDP95 Silicon NPN Transistors For AF driver and output stages High collector current High current gain Low collectoremitter saturation voltage Complementary types: BDP98, BDP95, BDP95 (PNP) Pbfree (RoHS compliant) package Qualified according AEC Q Type Marking Pin Configuration Package BDP97 BDP99 BDP97 =B BDP99 =B =C =C =E =E =C =C SOT SOT BDP95 BDP95 =B =C =E =C SOT 5
BDP97_BDP99_BDP95 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO V BDP97 BDP99 BDP95 5 6 Collectorbase voltage V CBO BDP97 BDP99 BDP95 5 6 Emitterbase voltage V EBO 5 Collector current I C A Peak collector current, t p ms I CM 5 Base current I B ma Peak base current, t p ms I BM 5 Total power dissipation P tot 5 W T S C Junction temperature T j 5 C Storage temperature T stg 65... 5 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs K/W 5
BDP97_BDP99_BDP95 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage I C = ma, I B =, BDP97 I C = ma, I B =, BDP99 I C = ma, I B =, BDP95 V (BR)CEO V 5 6 Collectorbase breakdown voltage V (BR)CBO I C = µa, I E =, BDP97 5 I C = µa, I E =, BDP99 6 I C =, I E = µa, BDP95 Emitterbase breakdown voltage I E = µa, I C = Collectorbase cutoff current V CB = 5 V, I E = V CB = 5 V, I E =, T A = 5 C Emitterbase cutoff current V EB = V, I C = DC current gain ) I C = ma, V CE = 5 V I C = 5 ma, V CE = V I C = A, V CE = V, BDP97, BDP99 I C = A, V CE = V, BDP95 Collectoremitter saturation voltage ) I C = A, I B =. A Base emitter saturation voltage ) I C = A, I B =. A AC Characteristics Transition frequency I C = 5 ma, V CE = V, f = MHz Collectorbase capacitance V CB = V, f = MHz V (BR)EBO 5 I CBO µa. I EBO na h FE 5 5 5 75 V CEsat.5 V V BEsat. f T MHz C cb 5 pf For calculation of R thja please refer to Application Note AN77 (Thermal Resistance Calculation) Pulse test: t < µs; D < % 5
BDP97_BDP99_BDP95 DC current gain h FE = ƒ(i C ) V CE = V Collectoremitter saturation voltage I C = ƒ(v CEsat ), h FE = C ma 5 C 55 C hfe IC C 5 C 5 C ma Baseemitter saturation voltage I C = (V BEsat ), h FE = I C.... V.6 V CEsat Collector current I C = ƒ(v BE ) V CE = V ma ma IC 5 C 5 C C IC 5 C 5 C C...6.8 V. V BEsat...6.8 V. V BE 5
BDP97_BDP99_BDP95 Collector cutoff current I CBO = ƒ(t A ) V CB = 5 V Collectorbase capacitance C cb = ƒ(v CB ) Emitterbase capacitance C eb = ƒ(v EB ) 5 na 5 pf ICB max CCB(CEB) 5 5 typ 5 CEB 6 8 C 5 T A Total power dissipation P tot = ƒ(t S ) 5 CCB 8 6 V V CB (V EB Permissible Pulse Load R thjs = ƒ(t p ) 5.5 W.5 Ptot.5 RthJS.5.5.5 D =,5,,,5,,,5 5 5 6 75 9 5 C 5 t s 6 5 s t p 5 5
BDP97_BDP99_BDP95 Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D =.5...5...5 6 5 s t p 6 5
Package SOT BDP97_BDP99_BDP95 Package Outline A 6.5 ±. ±.. MAX..6±. 7±. 5 MAX..5 ±. B Foot Print.7 ±..5 M A.6..5.5 MIN..5 M.8... B ±...8. Marking Layout (Example).. Manufacturer 5, CW Date code (YYWW) BCP56 Type code Pin Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 8. MAX. 7.55 Pin 6.8.75 7 5
BDP97_BDP99_BDP95 Edition 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 5