OptiMOS -5 Power-Transistor Product Summary V DS 8 V R DS(on).2 m Features N-channel - Enhancement mode AEC qualified I D 3 A H-PSOF-8- Tab MSL up to 26 C peak reflow 75 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) % Avalanche tested 8 8 Tab Type Package Marking IAUT3N8S5N2 P/G-HSOF-8-5N82 Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C =25 C, V GS =V ) 3 A T C = C, V GS = V 2) 3 Pulsed drain current 2) I D,pulse T C =25 C 2 Avalanche energy, single pulse 2) E AS I D =5 A 87 mj Avalanche current, single pulse I AS - 3 A Gate source voltage V GS - ±2 V Power dissipation P tot T C =25 C 375 W Operating and storage temperature T j, T stg - -55... +75 C IEC climatic category; DIN IEC 68- - - 55/75/56 Rev.. page 26--29
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics 2) Thermal resistance, junction - case R thjc - - -.4 K/W Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage 2) V (BR)DSS V GS = V, I D = ma 8 - - V Gate threshold voltage V GS(th) V DS =V GS, I D =275 µa 2.2 3 3.8 Zero gate voltage drain current 2) I DSS V DS =8 V, V GS = V, T j =25 C -. µa V DS =5 V, V GS = V, T j =85 C 2) - 2 Gate-source leakage current I GSS V GS =2 V, V DS = V - - na Drain-source on-state resistance R DS(on) V GS =6 V, I D =75 A -.3.7 mω V GS = V, I D = A -..2
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics 2) Input capacitance C iss - 25 625 pf Output capacitance C oss V GS = V, V DS =4 V, f = MHz - 2 26 Reverse transfer capacitance C rss - 86 3 Turn-on delay time t d(on) - 3 - ns Rise time t r V DD =4 V, V GS = V, - 9 - Turn-off delay time t d(off) I D = A, R G =3.5-69 - Fall time t f - 55 - Gate Charge Characteristics 2) Gate to source charge Q gs - 56 73 nc Gate to drain charge Q gd V DD =4 V, I D = A, - 37 56 Gate charge total Q g V GS = to V - 78 23 Gate plateau voltage V plateau - 4.5 - V Reverse Diode Diode continous forward current 2) I S T C =25 C - - 3 A Diode pulse current 2) I S,pulse - - 2 Diode forward voltage V SD V GS = V, I F = A, T j =25 C -.9.2 V Reverse recovery time 2) t rr V R =4 V, I F =5A, - 86 - ns Reverse recovery charge 2) Q rr di F /dt = A/µs - 77 - nc ) Current is limited by bondwire; with an R thjc =.4 K/W the chip is able to carry 4A at 25 C. 2) Defined by design. Not subject to production test. Rev.. page 3 26--29
Power dissipation 2 Drain current P tot = f(t C ); V GS 6 V I D = f(t C ); V GS 6 V 4 35 3 3 25 P tot [W] 2 2 5 5 5 5 2 5 5 2 T C [ C] T C [ C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(v DS ); T C = 25 C; D = Z thjc = f(t p ) parameter: t p parameter: D =t p /T µs µs.5 - µs ms Z thjc [K/W]..5-2. single pulse. V DS [V] -3-6 -5-4 -3-2 - t p [s] Rev.. page 4 26--29
5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(v DS ); T j = 25 C R DS(on) = (I D ); T j = 25 C parameter: V GS parameter: V GS 2 V 6.5 V 4 4.5 V 5 V 3.5 3 8 6 V 6 5.5 V R DS(on) [m ] 2.5 2 4 2 5 V 4.5 V.5 5.5 V 6 V 6.5 V V 2 3 4 5 6 7.5 2 3 V DS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(v GS ); V DS = 6V R DS(on) = f(t j ); I D = A; V GS = V parameter: T j 2-55 C 25 C 75 C 2..9 8.7 6 R DS(on) [m ].5.3 4..9 2.7 2 4 6 8 V GS [V].5-6 -2 2 6 4 8 T j [ C] Rev.. page 5 26--29
9 Typ. gate threshold voltage Typ. capacitances V GS(th) = f(t j ); V GS = V DS C = f(v DS ); V GS = V; f = MHz parameter: I D 4 5 3.5 Ciss 4 3 275 µa V GS(th) [V] 2.5 275 µa C [pf] 3 Coss 2 2 Crss.5-6 -2 2 6 4 8 T j [ C] 2 4 6 8 V DS [V] Typical forward diode characteristicis 2 Typ. avalanche characteristics IF = f(v SD ) I AS = f(t AV ) parameter: T j 4 parameter: T j(start) 3 25 C I F [A] 2 I AV [A] C 5 C 75 C 25 C.2.4.6.8.2.4 V SD [V] t AV [µs] Rev.. page 6 26--29
3 Typical avalanche energy 4 Drain-source breakdown voltage E AS = f(t j ) V BR(DSS) = f(t j ); I D_typ = ma parameter: I D 2 87 86 6 85 75 A 84 E AS [mj] 2 8 5 A V BR(DSS) [V] 83 82 8 8 79 4 3 A 78 77 25 75 25 75 T j [ C] 76-6 -2 2 6 4 8 T j [ C] 5 Typ. gate charge 6 Gate charge waveforms V GS = f(q gate ); I D = 3 A pulsed parameter: V DD 9 6 V V GS 8 7 4 V 64 V Q g 6 V GS [V] 5 4 3 2 Q gate Q gs Q gd 4 8 2 6 Q gate [nc] Rev.. page 7 26--29
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Revision History Version Version. Date 29.2.26 Changes Final Data Sheet Rev.. page 9 26--29