ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier

Similar documents
BJT Biasing Cont. & Small Signal Model

BJT Biasing Cont. & Small Signal Model

Chapter 5. BJT AC Analysis

EE105 Fall 2014 Microelectronic Devices and Circuits

Tutorial #4: Bias Point Analysis in Multisim

ESE319 Introduction to Microelectronics. BJT Biasing Cont.

CHAPTER.4: Transistor at low frequencies

ESE319 Introduction to Microelectronics. Output Stages

Class AB Output Stage

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )

The Common-Emitter Amplifier

Chapter 2 - DC Biasing - BJTs

Chapter 2. - DC Biasing - BJTs

EE 321 Analog Electronics, Fall 2013 Homework #8 solution

Quick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1

Biasing the CE Amplifier

Operational Amplifiers

Section 1: Common Emitter CE Amplifier Design

ESE319 Introduction to Microelectronics Bode Plot Review High Frequency BJT Model

Chapter 13 Small-Signal Modeling and Linear Amplification

The BJT Differential Amplifier. Basic Circuit. DC Solution

CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE

Bipolar Junction Transistor (BJT) - Introduction

CE/CS Amplifier Response at High Frequencies

Whereas the diode was a 1-junction device, the transistor contains two junctions. This leads to two possibilities:

Engineering 1620 Spring 2011 Answers to Homework # 4 Biasing and Small Signal Properties

(Refer Slide Time: 1:49)

(Refer Slide Time: 1:41)

Homework Assignment 08

R 2, R 3, and R 4 are in parallel, R T = R 1 + (R 2 //R 3 //R 4 ) + R 5. C-C Tsai

55:041 Electronic Circuits The University of Iowa Fall Final Exam

Chapter 9 Frequency Response. PART C: High Frequency Response

UNIVERSITY F P RTLAND Sch l f Engineering

Electronics II. Midterm #1

Mod. Sim. Dyn. Sys. Amplifiers page 1

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)

Mod. Sim. Dyn. Sys. Amplifiers page 1

As light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR

Transistor Characteristics and A simple BJT Current Mirror

Refinements to Incremental Transistor Model

Assignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.

SOME USEFUL NETWORK THEOREMS

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

figure shows a pnp transistor biased to operate in the active mode

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution

EE-201 Review Exam I. 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) -2V (4) 1V (5) -1V (6) None of above

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Figure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009

ECE 304: Design Issues for Voltage Follower as Output Stage S&S Chapter 14, pp

Core Technology Group Application Note 3 AN-3

University of Pennsylvania Department of Electrical and Systems Engineering ESE 319 Microelectronic Circuits. Final Exam 10Dec08 SOLUTIONS

FYSE400 ANALOG ELECTRONICS

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION

Lecture 37: Frequency response. Context

I. Frequency Response of Voltage Amplifiers

Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER

Sinusoidal Response of RLC Circuits

Biasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION

Experiment 9 Equivalent Circuits

Delta & Y Configurations, Principles of Superposition, Resistor Voltage Divider Designs

ECE137B Final Exam. Wednesday 6/8/2016, 7:30-10:30PM.

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits

UNIT 4 DC EQUIVALENT CIRCUIT AND NETWORK THEOREMS

General Purpose Transistors

ACADAMIC CHAPTER OF SWECHA September- 2010

EE105 Fall 2015 Microelectronic Devices and Circuits Frequency Response. Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)

PHYSICS 171 UNIVERSITY PHYSICS LAB II. Experiment 6. Transient Response of An RC Circuit

Single Phase Parallel AC Circuits

Homework Assignment 09

The current source. The Active Current Source

Electronics II. Midterm II

ESE319 Introduction to Microelectronics. Feedback Basics

Circle the one best answer for each question. Five points per question.

University of Illinois at Chicago Spring ECE 412 Introduction to Filter Synthesis Homework #4 Solutions

D C Circuit Analysis and Network Theorems:

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.

Lecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics. Lena Peterson

55:041 Electronic Circuits The University of Iowa Fall Exam 2

ENGR-4300 Spring 2009 Test 2. Name: SOLUTION. Section: 1(MR 8:00) 2(TF 2:00) 3(MR 6:00) (circle one) Question I (20 points): Question II (20 points):

Chapter 10 AC Analysis Using Phasors

Simple Resistive Circuits

E1.1 Analysis of Circuits ( ) Revision Lecture 1 1 / 13

3-TERMINAL 0.1A NEGATIVE VOLTAGE REGULATOR

Electronic Circuits Summary

resistance in the circuit. When voltage and current values are known, apply Ohm s law to determine circuit resistance. R = E/I ( )

Microelectronic Circuit Design 4th Edition Errata - Updated 4/4/14

Operational Amplifier (Op-Amp) Operational Amplifiers. OP-Amp: Components. Internal Design of LM741

EE 330. Lecture 35. Parasitic Capacitances in MOS Devices

Prepare for this experiment!

POLYTECHNIC UNIVERSITY Electrical Engineering Department. EE SOPHOMORE LABORATORY Experiment 2 DC circuits and network theorems

MICROELECTRONIC CIRCUIT DESIGN Second Edition

Examination paper for TFY4185 Measurement Technique/ Måleteknikk

CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130

Lecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen

ECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION


Lecture 7: Transistors and Amplifiers

Chapter 10: Sinusoidal Steady-State Analysis

Transcription:

Common Emitter BJT Amplifier 1

Adding a signal source to the single power supply bias amplifier R C R 1 R C V CC V CC V B R E R 2 R E Desired effect addition of bias and signal sources Starting point - single dc source 2

Wrong Way to Combine Sources <> 0 0 Source with low output impedance upsets bias. Thevenin equivalent at base: 3

Wrong Way - Continued R S V B V th To analyze, 1. Isolate base circuit, 2. Use superposition, 3. Find Thevenin equivalent for the base bias source, V B : V th R th ' 50 20000 50 V B 5 2000 V B R S 50 20000 50 20000 50 The signal source effectively shorts out the bias source! ( 0) The signal source v S is essentially is unaffected by the bias source V B. (Why? What is its Thevenin equivalent?) 4

ESE319 Introduction to Microelectronics The Right Way Use a Blocking Capacitor i Cb v Cb + - C b 0 r bg For convenience lets continue to use the base bias Thevenin equiv. 1. Capacitor C b is an OPEN at dc and R S does not affect the bias! 2. C b charges to the dc bias source, V B, to satisfy Kirchoff's voltage law. 3. The dc bias is in series with the signal source, i.e. DESIGN GOAL: for f f min1, set the value of C b so that its ac voltage drop v Cb is negligible at and above the low frequency cutoff at say f min1. v S V B 5

Using superposition, for small-signal let V B 0. ESE319 Introduction to Microelectronics Blocking Capacitor Selection i b i c apply i b evaluate i e <> i b i e i c 0 r bg r bg v bg i b i e i b i b Use the small signal equivalent circuit and superposition to estimate the input resistance of the transistor. v bg i b r i e R E i b r i b 1 R E r bg v bg i b r 1 R E R E 6

Capacitor Selection- continued The signal source sees the 20 kω bias source resistance in parallel with. So the signal source equivalent circuit is: i Cb r bg 0 R E 400 k Therefore: v Cb + - C b 0 r BG 400 420 20 20 k r bg R E The capacitor voltage drop is: v Cb 1 i j C Cb b Where the capacitor current is: i Cb R S r bg 1 j C b i Cb 1 j C b > v Cb j C b 1 Goal: C b 1 7

i Cb v Cb + - ESE319 Introduction to Microelectronics Capacitor Selection - continued C b 1 v Cb or f RB C j C b 1 b 2 C b CONSERVATIVE DESIGN GOAL: Choose C b for negligible voltage drop at v Cb for f f min1, i.e. OR v Cb j C b 1 for f f min1 v Cb 2 f min1c b C b 2 f min1 DESIGN GOAL: Choose C b so that f RB C b 0.1 f min1, i.e. 1 f Cb 0.1 f 2 C b R min1 C b B 2 f min1 8

Capacitor Selection - continued C b 2 f min1 C b min 2 f min1 Select the LOWEST frequency of interest. This sets the lower bound on C b. Using f min1 20 Hz frequency for our example circuit: 2 f min1 2 20 6.28 20125.6 sec 1 C b min 125.6 20 3 6 0.25 4 F ANY capacitor larger than 4 do the job! F will also 9

Common Emitter Unity Gain Amplifier Cb 5 uf Cb 5 uf Equivalent circuits How can we achieve reasonable gain with this circuit? Solution: Split R E and use capacitor bypassing.

Cb 5 uf 0 ESE319 Introduction to Microelectronics + v RE1 - + v ZE2 - Bypass for Gain Procedure: 1. Split the emitter resistor in two. Later, we will show that the voltage gain will be close i e Z E2 R E2 1 j C byp to -R C /R E1. 2. Bypass R E2 with a capacitor C byp that looks like a near short circuit at some suitable low frequency (f min2 f min1 ). i.e. v ZE2 << v RE1 for f f min2 ) v RE1 i e R E1 & v ZE2 i e Z E2 11

Bypass for Gain - continued Rb 20 k Ohm + v RE1 - + Rb 20 k Ohm v ZE2-0 0 Small signal circuit Desired circuit for f f min2 i.e. CONSERVATIVE DESIGN GOAL: Choose C byp s.t. v ZE2 << v RE1 for f f min2 12

Rs Rb b c Need to develop a design equation for C byp s.t. DESIGN GOAL: v ZE2 << v RE1 i b e i c i e + v RE1 + - v ZE2 i e 1 i b - 0 r e R E1 v RE1 i e R E1 & v ZE2 i e Z E2 where Z E2 v ZE2 V RE1 Z E2i e R E1 i e C byp R E2 R E1 1 2 f min2 R E2 C byp 2 f min2 R E1 R E2 j C byp R E2 1 R E2 / R E1 j C byp R E2 1 1 j 2 f min2 C byp R E2 1 R E2 R E1 1 2 f min2 R E1 13

C b 2 f min1 In Lab 2 Choose C b s.t. 1 2 f min1 C b R in r bg f min1 Hz C b 1 1 2 f min1 20 C byp 2 f min2 R E1 Choose C byp s.t. C byp f min2 0Hz 1 R E 2 f min2 C byp 2 1 2 f min2 R E /2 1 0 R E 14

C byp ESE319 Introduction to Microelectronics 2 f min R E1 2 x 20 x 00 F 79.6 F You may choose C byp 0 F Final Design Cb 5 uf 15

Gain Calculation in Passband Simple gain calculation: + - vout i b R s r 1 R E1 1 R E1 v out R C i c R C i b 0 Passband model v out R C v 1 R s E1 A v v out R C R E1 4 16

Multisim Simulation 20 Hz Gain I khz Gain 17

What if R E is Fully Bypassed? A v v out R C R E 0? 18

What if R E is Fully Bypassed? Cb 5 uf vout i b R s r 1 R E v out R C i c R C i b 0 R S r I C 1 ma g m I C /V T 0.04 S r / g m 2.5k 0 v out R C R S r R C r. R C / g m g m R C A v v out g m R C 160 19