GTQ TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTQ High Power Switching Applications Motor Control Applications Unit: mm Third-generation IGBT Enhancement mode type High speed: tf =.2 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 2 C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 2 V Gate-emitter voltage V GES ±2 V Collector current DC I C ms I CP 2 A Emitter-collector forward current DC I F ms I FM 2 A JEDEC JEITA Collector power dissipation (Tc = 2 C) P C W Junction temperature T j C TOSHIBA Weight:.6 g (typ.) 2-6CC Storage temperature range T stg to C Equivalent Circuit Collector Gate Emitter Marking TOSHIBA GTQ Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2-7-6
GTQ Electrical Characteristics (Ta = 2 C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ±2 V, V CE = ± na Collector cut-off current I CES V CE = 2 V, V GE =. ma Gate-emitter cut-off voltage V GE (OFF) I C = ma, V CE = V. 7. V Collector-emitter saturation voltage V CE (sat) I C = A, V GE = V 2. 2.7 V Input capacitance C ies V CE = V, V GE =, f = MHz 6 pf Switching time Rise time t r.7 Turn-on time t on Inductive load. V CC = 6 V, I C = A Fall time t f V GG = ± V, R G = 7 Ω (Note).6.2 Turn-off time t off. µs Peak forward voltage V F I F = A, V GE =. V Reverse recovery time t rr I F = A, di/dt = 2 A/µs ns Thermal resistance (IGBT) R th (j-c).9 C/W Thermal resistance (diode) R th (j-c).79 C/W Note: Switching time measurement circuit and input/output waveforms R G V GE 9% % V GE I C L V CC I C 9% 9% R G V CE V CE % % % % t d (off) t d (on) t r t f t off t on 2 2-7-6
GTQ I C V CE V CE V GE 2 2 6 2 Tc = 2 C 2 2 VGE = V 6 2 Tc = C IC = A 2 2 2 6 2 Collector-emitter voltage V CE (V) V CE V GE V CE V GE 2 2 6 2 Tc = 2 C IC = A 2 6 2 Tc = 2 C IC = A 2 ) 2 6 2 2 6 2 I C V GE V CE (sat) Tc 2 6 2 VCE = V 2 Tc = 2 C Collector-emitter saturation voltage VCE (sat) (V) 2 VGE = V 2 IC = A 2 6 2 6 2 2 6 Case temperature Tc ( C) 2-7-6
GTQ Switching Time t on, t r R G Switching Time t on, t r I C. Switching time ton, tr (µs).... ton tr VCC = 6 V VGG = ± V IC = A Switching time ton, tr (µs)... ton tr VCC = 6 V VGG = ± V RG = 7 Ω.. 2 6 2 Gate resistance R G (Ω) Collector current I C (A) Switching time toff, tf (µs).... Switching Time t off, t f R G VCC = 6 V VGG = ± V IC = A toff tf Switching time toff, tf (µs).. Switching Time t off, t f I C VCC = 6 V VGG = ± V RG = 7 Ω toff tf. Gate resistance R G (Ω). 2 6 2 Collector current I C (A) Switching loss Eon, Eoff (mj).. Switching Loss E on, E off R G VCC = 6 V VGG = ± V IC = A Eon Eoff Switching loss Eon, Eoff (mj)... Switching Loss E on, E off I C VCC = 6 V VGG = ± V RG = 7 Ω Eon Eoff. Gate resistance R G (Ω). 2 6 2 Collector current I C (A) 2-7-6
GTQ Capacitance C (pf) C V CE Cies Coes Cres VGE = f = MHz Tc = 2 C.. 6 2 V CE, V GE Q G 2 RL = 6 Ω Tc = 2 C 6 2 6 VCE = 2 V 2 6 Gate-emitter voltage VGE (V) Collector-emitter voltage V CE (V) Gate charge Q G (nc) 2 I F V F t rr, I rr I F Forward current IF (A) 6 2 2 Tc= 2 C Common collector VGE = 2 Reverse recovery current Irr (A) ) trr Irr Common collector di/dt = 2 A/µs VGE = 2 6 2 Reverse recovery time trr (ns) Forward voltage V F (V) Forward current I F (A) Safe Operating Area Reverse Bias SOA IC max (pulsed)* IC max (continuous)... DC operation *: Single nonrepetitive pulse Tc = 2 C Curves must be derated linearly with increase in temperature. µs* ms* ms* µs*... Tj 2 C VGE = ± V RG = Ω Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) 2-7-6
GTQ Transient thermal impedance rth (t) ( C/W) 2 2 r th (t) t w Tc = 2 C Diode stage IGBT stage 2 2 Pulse width t w (s) 6 2-7-6
GTQ RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. 69EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2-7-6