Silicon Carbide Schottky Diode IDW3G12C5B Final Datasheet Rev. 2.1 217721 Industrial Power Control
IDW3G12C5B CoolSiC TM SiC Schottky Diode Features: 1 2 CASE Revolutionary semiconductor material Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness Qualified according to JEDEC 1) for target applications Pbfree lead plating; RoHS compliant 3 Benefits System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability RelatedLinks: www.infineon.com/sic Applications Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction Package pin definitions Pin 1 anode 1 Pin 2 and backside cathode Pin 3 anode 2 Key Performance and Package Parameters (leg/device) Type V DC I F Q C T j,max Marking Package IDW3G12C5B 12 V 15 / 3 A 77 / 154 nc 175 C D312B5 PGTO2473 1) JSTD2 and JESD22 Final Data Sheet 2 Rev. 2.1, 217721
IDW3G12C5B Table of Contents Description.... 2 Table of Contents... 3 Maximum ratings... 4 Thermal Resistances... 4 Electrical Characteristics... 5 Electrical Characteristics diagram... 6 Package Drawings... 9 Revision History... 1 Disclaimer.... 11 Final Data Sheet 3 Rev. 2.1, 217721
IDW3G12C5B Maximum ratings Parameter Symbol Value (leg/device) Unit Repetitive peak reverse voltage V RRM 12 V Continuous forward current for R th(jc,max) T C = 15 C, D=1 T C = 135 C, D=1 T C = 25 C, D=1 Surge nonrepetitive forward current, sine halfwave T C =25 C, t p =1ms T C =15 C, t p =1ms Nonrepetitive peak forward current T C = 25 C, t p =1 µs i²t value T C = 25 C, t p =1 ms T C = 15 C, t p =1 ms Diode dv/dt ruggedness V R =...96 V I F 15 / 3 2 / 4 44 / 87 I F,SM 12 / 24 115 / 23 I F,max 123 / 246 A i²dt 72 / 288 66 / 264 A A A²s dv/dt 8 V/ns Power dissipation for R th(jc,max) T C = 25 C P tot 166 / 332 W Operating and storage temperature T j ;T stg 55 175 C Soldering temperature, wavesoldering only allowed at leads 1.6mm (.63 in.) from case for 1 s Mounting torque M3 and M4 screws T sold 26 C M.7 Nm Thermal Resistances Parameter Characteristic Diode thermal resistance, junction case Thermal resistance, junction ambient Symbol Conditions Value (leg/device) min. typ. max. Unit R th(jc).7/.35.9/.5 K/W R th(ja) leaded 62 K/W Final Data Sheet 4 Rev. 2.1, 217721
IDW3G12C5B Electrical Characteristics Static Characteristic, at Tj=25 C, unless otherwise specified Parameter Symbol Conditions Value (leg/device) min. typ. max. DC blocking voltage V DC T j = 25 C 12 V Diode forward voltage V F I F = 15/3 A, T j =25 C 1.4 1.65 I F = 15/3 A, T j =15 C 1.7 2.3 V Reverse current I R V R =12 V, T j =25 C 9 / 17 124 / 248 V R =12 V, T j =15 C 44 / 88 64 / 128 µa Unit Dynamic Characteristics, at T j =25 C, unless otherwise specified Parameter Total capacitive charge Total Capacitance Symbol Conditions Q C C V R = 8V, T j =15 C & 25 C Q C V R C( V ) dv V R =1 V, f=1 MHz V R =4 V, f=1 MHz V R =8 V, f=1 MHz Value (leg/device) min. typ. max. Unit 77 / 154 nc 99 /198 7 / 14 55 / 111 pf Final Data Sheet 5 Rev. 2.1, 217721
I F [A] I F [A] P [W] I F [A] IDW3G12C5B Electrical Characteristics diagrams 18 16 16 14 D=.1 D=.3 14 12 D=.5 D=.7 12 1 8 6 4 1 8 6 4 D= 1. 2 2 25 5 75 1 125 15 175 T c [ C] Figure 1. Power dissipation per leg as function of case temperature, P tot =f(t C ), R th(jc),max 25 5 75 1 125 15 175 T c [ C] Figure 2. Diode forward current per leg as function of temperature, parameter: T j 175 C, R th(jc),max, D=duty cycle, V th, R diff @ T j =175 C 3 25 2 55 C 25 C 14 12 1 55 C 25 C 15 1 C 15 C 8 1 C 1 5 175 C 6 4 2 175 C 15 C.5 1 1.5 2 2.5 V F [V] Figure 3. Typical forward characteristics per leg, I F =f(v F ), t p = 1 µs, parameter: T j 1 2 3 4 5 6 V F [V] Figure 4. Typical forward characteristics in surge current per leg, I F =f(v F ), t p = 1 µs, parameter: T j Final Data Sheet 6 Rev. 2.1, 217721
C [pf] Z thjc [K/W] Q C [nc] I R [A] IDW3G12C5B 9 1.E4 8 7 6 5 1.E5 1.E6 4 3 2 1 1.E7 1.E8 175 C 15 C 1 C 25 C 55 C 1 4 7 1 di F /dt [A/µs] Figure 5. Typical capacitive charge per leg as function of current slope 1, Q C =f(di F /dt), T j =15 C 1) guaranteed by design. 1.E9 2 4 6 8 1 12 V R [V] Figure 6. Typical reverse characteristics per leg, I R =f(v R ), parameter: T j 14 12 1 1 8.1 D=.5 D=.2 D=.1 D=.5 D=.2 D=.1 6 4 2 Single Pulse.1 1E6 1E3 1E tp [s] Figure 7. Max. transient thermal impedance per leg, Z th,jc =f(t P ), parameter: D=t P /T 1 1 1 1 V R [V] Figure 8. Typical capacitance per leg as function of reverse voltage, C=f(V R ); T j =25 C; f=1 MHz Final Data Sheet 7 Rev. 2.1, 217721
E C [µj] IDW3G12C5B 5 45 4 35 3 25 2 15 1 5 2 4 6 8 1 12 V R [V] Figure 9. Typical capacitively stored energy as function of reverse voltage, per leg, E C =f(v R ) Final Data Sheet 8 Rev. 2.1, 217721
IDW3G12C5B Package Drawings Final Data Sheet 9 Rev. 2.1, 217721
IDW3G12C5B Revision History IIDW3G12C5B Revision: 217721, Rev. 2.1 Previous Revision: Revision Date Subjects (major changes since last version) 2. 21461 Final data sheet 2.1 Editorial Changes Disclaimer We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Final Data Sheet 1 Rev. 2.1, 217721
IDW3G12C5B Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 217. All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). Please note that this product is not qualified according to the AEC Q1 or AEC Q11 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. Final Data Sheet 11 Rev. 2.1, 217721