ORDERING INFORMATION # of Ports Pressure Type Option Device Name

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Freescale Semiconductor Integrated Silicon Pressure Sensor + On-Chip Signal Conditioned, Temperature Compensated and Calibrated The series piezoresistive transducers are state-of-the-art monolithic silicon pressure sensors designed for the appliance, consumer, health care and industrial market. The analog output can be read directly into the A/D input of Freescale microcontrollers. This transducer combines advanced micromachining techniques, thin-film metallization, and bipolar processing to provide an accurate, high level analog output signal that is proportional to the applied pressure. The axial port has been modified to accommodate industrial grade tubing. Features 2.5% Maximum Error over +10 C to +60 C with Auto Zero 5% Maximum Error over +10 C to +60 C without Auto Zero Durable Thermoplastic (PPS) Package Available in Surface Mount (SMT) or Through-Hole (DIP) Configurations Available with Standard Fluorosilicone Gel or Media Resistant Gel Pressure Rev 3, 1/2009 Series Integrated Pressure Sensor 0 to 6 kpa (0 to 0.87 psi) 0.2 to 4.8 V Output Application Examples Washing Machine Water Level Measurement (Reference AN1950) Ideally Suited for Microprocessor or Microcontroller-Based Systems Appliance Liquid Level and Pressure Measurement Respiratory Equipment ORDERING INFORMATION # of Ports Pressure Type Option Device Name Package Case Device Options No. None Single Dual Gauge Differential Absolute Surface Through- Marking Mount Hole Small Outline Package (Media Resistant Gel) (MPVZ4006 Series) MPVZ4006GW6U Rail 1735 MZ4006GW MPVZ4006GW7U Rail 1560 MZ4006GW MPVZ4006G6U Rail 482 MPVZ4006G MPVZ4006G6T1 Tape and 482 MPVZ4006G Reel MPVZ4006G7U Rail 482B MPVZ4006G Small Outline Package ( Series) GC6U Rail 482A G GC6T1 Tape and 482A G Reel GC7U Rail 482C G GP Tray 1369 GP DP Tray 1351 DP Freescale Semiconductor, Inc., 2006-2009. All rights reserved.

SURFACE MOUNT MPVZ4006GW6U CASE 1735-01 MPVZ4006G6U/T1 CASE 482-01 GC6U/C6T1 CASE 482A-01 DP CASE 1351-01 GP CASE 1369-01 THROUGH-HOLE J MPVZ4006GW7U CASE 1560-02 MPVZ4006G7U CASE 482B-03 GC7U CASE 482C-03 2 Freescale Semiconductor

Operating Characteristics Pressure Table 1. Operating Characteristics (V S = 5.0 Vdc, T A = 25 C unless otherwise noted, P1 > P2) Characteristic Symbol Min Typ Max Unit Pressure Range P OP 0 6.0 612 Supply Voltage (1) kpa mm H 2 O V S 4.75 5.0 5.25 Vdc Supply Current I S 10 madc Full Scale Span (2) V FSS 4.6 V Offset (3)(5) V off 0.152 0.265 0.378 V Sensitivity V/P 766 7.511 Accuracy (4)(5) (10 to 60 C) mv/kpa mv/mm H 2 O ±2.46 ±5.0 %V FSS with auto zero %V FSS without auto zero 1. Device is ratiometric within this specified excitation range. 2. Full Scale Span (V FSS ) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the minimum rated pressure. 3. Offset (V off ) is defined as the output voltage at the minimum rated pressure. 4. Accuracy (error budget) consists of the following: Linearity: Output deviation from a straight line relationship with pressure over the specified pressure range. Temperature Hysteresis: Output deviation at any temperature within the operating temperature range, after the temperature is cycled to and from the minimum or maximum operating temperature points, with zero differential pressure applied. Pressure Hysteresis: Output deviation at any pressure within the specified range, when this pressure is cycled to and from minimum or maximum rated pressure, at 25 C. Offset Stability: Output deviation, after 1000 temperature cycles, -30 to 100 C, and 1.5 million pressure cycles, with minimum rated pressure applied. TcSpan: Output deviation over the temperature range of 10 to 60 C, relative to 25 C. TcOffset: Output deviation with minimum pressure applied, over the temperature range of 10 to 60 C, relative to 25 C. 5. Auto Zero at Factory Installation: Due to the sensitivity of the, external mechanical stresses and mounting position can affect the zero pressure output reading. To obtain the 2.46% FSS accuracy, the device output must be autozeroed'' after installation. Autozeroing is defined as storing the zero pressure output reading and subtracting this from the device's output during normal operations. The specified accuracy assumes a maximum temperature change of ±5 C between autozero and measurement. Freescale Semiconductor 3

Maximum Ratings Table 2. Maximum Ratings (1) Parametrics Symbol Value Units Maximum Pressure (P1 > P2) P max 24 kpa Storage Temperature T stg -30 to +100 C Operating Temperature T A +10 to +60 C 1. Exposure beyond the specified limits may cause permanent damage or degradation to the device. V S 2 Sensing Element Thin Film Temperature Compensation and Gain Stage #1 Gain Stage #2 and Ground Reference Shift Circuitry 4 V out GND 3 Pins 1, 5, 6, 7, and 8 are NO CONNECTS for small outline package device Figure 1. Fully Integrated Pressure Sensor Schematic 4 Freescale Semiconductor

On-Chip Temperature Compensation and Calibration Pressure The performance over temperature is achieved by integrating the shear-stress strain gauge, temperature compensation, calibration and signal conditioning circuitry onto a single monolithic chip. Figure 2 illustrates the Differential or Gauge configuration in the basic chip carrier (Case 482). A gel die coat isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the silicon diaphragm. The /MPVZ4006 series sensor operating characteristics are based on use of dry air as pressure media. Media, other than dry air, may have adverse effects on sensor performance and long-term reliability. Internal reliability and qualification test for dry air, and other media, are available from the factory. Contact the factory for information regarding media tolerance in your application. Figure 3 shows the recommended decoupling circuit for interfacing the output of the integrated sensor to the A/D input of a microprocessor or microcontroller. Proper decoupling of the power supply is recommended. Figure 4 and Figure 5 shows the sensor output signal relative to pressure input. Typical, minimum and maximum output curves are shown for operation over a temperature range of 10 C to 60 C using the decoupling circuit shown in Figure 3. The output will saturate outside of the specified pressure range. Fluorosilicone Gel Die Coat Die Stainless Steel Cap +5 V Wire Bond P1 Thermoplastic Case Vs Vout OUTPUT Lead Frame 1.0 μf IPS 0.01 μf GND 470 pf Differential Sensing Element P2 Die Bond Figure 2. Cross Sectional Diagram SOP (not to scale) Figure 3. Recommended Power Supply Decoupling and Output Filtering Recommendations (For additional output filtering, please refer to Application Note AN1646.) 5.0 4.5 4.0 3.5 Transfer Function (kpa): V out = V S *[(0.1533*P) + 0.053] ± 5.0% V FSS V S = 5.0 Vdc TEMP = 10 to 60 C 5.0 4.5 4.0 3.5 Transfer Function (kpa): V out = V S *[(0.1533*P) + 0.053] ± 2.46% V FSS V S = 5.0 Vdc TEMP = 10 to 60 C 3.0 3.0 Output (V) 2.5 2.0 1.5 1.0 MAX MIN TYPICAL Output (V) 2.5 2.0 1.5 1.0 MAX MIN TYPICAL 0.5 0.5 0 0 2.0 Differential Pressure (kpa) 4.0 6.0 Figure 4. Output versus Pressure Differential at ±5.0% V FSS (without auto zero, Note 5 in Operating Characteristics) 0 0 2.0 Differential Pressure (kpa) 4.0 6.0 Figure 5. Output versus Pressure Differential at ±2.46% V FSS (with auto zero, Note 5 in Operating Characteristics) Freescale Semiconductor 5

PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE Freescale designates the two sides of the pressure sensor as the Pressure (P1) side and the Vacuum (P2) side. The Pressure (P1) side is the side containing a gel die coat which isolates the die from the environment. The pressure sensor is Table 3. Pressure (P1)/Vacuum (P2) Side Identification Table designed to operate with positive differential pressure applied, P1 > P2. The Pressure (P1) side may be identified by using the table below: Part Number Case Type Pressure (P1) Side Identifier MPVZ4006GW6U 1735-01 Vertical Port Attached MPVZ4006GW7U 1560-02 Vertical Port Attached MPVZ4006G6U/T1 482-01 Stainless Steel Cap MPVZ4006G7U 482B-03 Stainless Steel Cap GC6U/T1 482A Vertical Port Attached GC7U 482C-03 Vertical Port Attached GP 1369-01 Side with Port Attached DP 1351-01 Side with Part Marking MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the surface mount packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct footprint, the packages will self align when subjected to a solder reflow process. It is always recommended to design boards with a solder mask layer to avoid bridging and shorting between solder pads. 0.660 16.76 0.100 TYP 2.54 0.060 TYP 8X 1.52 0.300 7.62 0.100 TYP 8X 2.54 inch mm Figure 6. SOP Footprint (Case 482) 6 Freescale Semiconductor

CASE 1351-01 ISSUE A Freescale Semiconductor 7

CASE 1351-01 ISSUE A 8 Freescale Semiconductor

CASE 1369-01 ISSUE B Freescale Semiconductor 9

CASE 1369-01 ISSUE B 10 Freescale Semiconductor

PACKAGE DIMENSIONS Pressure -A- -B- 5 8 4 1 G D 8 PL 0.25 (0.010) M T B S A S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006). 5. ALL VERTICAL SURFACES 5 TYPICAL DRAFT. J K S N M C PIN 1 IDENTIFIER H -T- SEATING PLANE INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.415 0.425 10.54 10.79 B 0.415 0.425 10.54 10.79 C 0.212 0.230 5.38 5.84 D 0.038 0.042 0.96 1.07 G 0.100 BSC 2.54 BSC H 0.002 0.010 0.05 0.25 J 0.009 0.011 0.23 0.28 K 0.061 0.071 1.55 1.80 M 0 7 0 7 N 0.405 0.415 10.29 10.54 S 0.709 0.725 18.01 18.41 CASE 482-01 ISSUE O -A- -B- 5 8 J -T- S N 4 1 G C M D 8 PL 0.25 (0.010) M T B S A S PIN 1 IDENTIFIER DETAIL X K DETAIL X SEATING PLANE NOTES: 1. 2. 3. 4. 5. 6. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. MAXIMUM MOLD PROTRUSION 0.15 (0.006). ALL VERTICAL SURFACES 5 TYPICAL DRAFT. DIMENSION S TO CENTER OF LEAD WHEN FORMED PARALLEL. DIM A B C D G J K M N S INCHES MILLIMETERS MIN MAX MIN MAX 0.415 0.425 10.54 10.79 0.415 0.425 10.54 10.79 0.210 0.220 5.33 5.59 0.026 0.034 0.66 0.864 0.100 BSC 2.54 BSC 0.009 0.100 0 0.405 0.540 0.011 0.120 15 0.415 0.560 0.23 2.54 0 10.29 13.72 0.28 3.05 15 10.54 14.22 CASE 482B-03 ISSUE B Freescale Semiconductor 11

PACKAGE DIMENSIONS N B J 5 8 A S V 4 1 G C D 8 PL 0.25 (0.010) M T B S A S W H T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006). 5. ALL VERTICAL SURFACES 5 TYPICAL DRAFT. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.415 0.425 10.54 10.79 B 0.415 0.425 10.54 10.79 C 0.500 0.520 12.70 13.21 D 0.038 0.042 0.96 1.07 G 0.100 BSC 2.54 BSC H 0.002 0.010 0.05 0.25 J 0.009 0.011 0.23 0.28 K 0.061 0.071 1.55 1.80 M 0 7 0 7 N 0.444 0.448 11.28 11.38 S 0.709 0.725 18.01 18.41 V 0.245 0.255 6.22 6.48 W 0.115 0.125 2.92 3.17 K M PIN 1 IDENTIFIER SEATING PLANE CASE 482A-01 ISSUE A 12 Freescale Semiconductor

PACKAGE DIMENSIONS Pressure CASE 1560-02 ISSUE C Freescale Semiconductor 13

PACKAGE DIMENSIONS CASE 1560-02 ISSUE C 14 Freescale Semiconductor

PACKAGE DIMENSIONS Pressure CASE 1560-02 ISSUE C Freescale Semiconductor 15

PACKAGE DIMENSIONS CASE 1735-01 ISSUE A 16 Freescale Semiconductor

PACKAGE DIMENSIONS Pressure CASE 1735-01 ISSUE A Freescale Semiconductor 17

PACKAGE DIMENSIONS CASE 1735-01 ISSUE A 18 Freescale Semiconductor

PACKAGE DIMENSIONS N B 5 8 A S 4 1 V G C D 8 PL 0.25 (0.010) M T B S A S PIN 1 IDENTIFIER DETAIL X W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006). 5. ALL VERTICAL SURFACES 5 TYPICAL DRAFT. 6. DIMENSION S TO CENTER OF LEAD WHEN FORMED PARALLEL. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.415 0.425 10.54 10.79 B 0.415 0.425 10.54 10.79 C 0.500 0.520 12.70 13.21 D 0.026 0.034 0.66 0.864 G 0.100 BSC 2.54 BSC J 0.009 0.011 0.23 0.28 K 0.100 0.120 2.54 3.05 M 0 15 0 15 N 0.444 0.448 11.28 11.38 S 0.540 0.560 13.72 14.22 V 0.245 0.255 6.22 6.48 W 0.115 0.125 2.92 3.17 J M DETAIL X K T SEATING PLANE CASE 482C-03 ISSUE A Freescale Semiconductor 19

PACKAGE DIMENSIONS 2 PLACES 4 TIPS 0.006 (0.15) C A B A E 5 4 e e/2 GAGE PLANE D.014 (0.35) θ L DETAIL G A1 F B 8 E1 1 8X b 0.004 (0.1) M C A B STYLE 1: PIN 1. GND 2. +Vout 3. Vs 4. -Vout 5. N/C 6. N/C 7. N/C 8. N/C STYLE 2: PIN 1. N/C 2. Vs 3. GND 4. Vout 5. N/C 6. N/C 7. N/C 8. N/C NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006 (0.152) PER SIDE. 4. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.008 (0.203) MAXIMUM. P N 8X DETAIL G A 0.004 (0.1) C SEATING PLANE M T K DIM A A1 b D E E1 e F K L M N P T θ INCHES MILLIMETERS MIN MAX MIN MAX 0.370 0.390 9.39 9.91 0.002 0.010 0.05 0.25 0.038 0.042 0.96 1.07 0.465 0.485 11.81 12.32 0.680 0.700 17.27 17.78 0.465 0.485 11.81 12.32 0.100 BSC 2.54 BSC 0.240 0.260 6.10 6.60 0.115 0.135 2.92 3.43 0.040 0.060 1.02 1.52 0.270 0.290 6.86 7.37 0.160 0.180 4.06 4.57 0.009 0.011 0.23 0.28 0.110 0.130 2.79 3.30 0 7 0 7 CASE 1351-01 ISSUE O 20 Freescale Semiconductor

PACKAGE DIMENSIONS Pressure 2 PLACES 4 TIPS 0.008 (0.20) C A B A E 5 4 e e/2 GAGE PLANE D.014 (0.35) θ L DETAIL G A1 F B 8 E1 1 8X b 0.004 (0.1) M C A B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006 (0.152) PER SIDE. 4. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.008 (0.203) MAXIMUM. P T N DETAIL G 8X A 0.004 (0.1) C SEATING PLANE M K INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.300 0.330 7.11 7.62 A1 0.002 0.010 0.05 0.25 b 0.038 0.042 0.96 1.07 D 0.465 0.485 11.81 12.32 E 0.717 BSC 18.21 BSC E1 0.465 0.485 11.81 12.32 e 0.100 BSC 2.54 BSC F 0.245 0.255 6.22 6.47 K 0.120 0.130 3.05 3.30 L 0.061 0.071 1.55 1.80 M 0.270 0.290 6.86 7.36 N 0.080 0.090 2.03 2.28 P 0.009 0.011 0.23 0.28 T 0.115 0.125 2.92 3.17 θ 0 7 0 7 CASE 1369-01 ISSUE O Freescale Semiconductor 21

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