From 180º stripe domains to more exotic patterns of polarization in ferroelectric nanostructures. A first principles view

Similar documents
Stability of a Ferroelectric Phase with Electrical Domains in Multilayers

Ferroelectric Tunnel Junctions: A Theoretical Approach

Scaling of structure and electrical properties in ultrathin epitaxial ferroelectric heterostructures

Electric displacement as the fundamental variable in electronic-structure calculations

arxiv: v1 [cond-mat.mtrl-sci] 22 Apr 2010

Curie-Weiss law in thin-film ferroelectrics

Mustafa Uludogan 1, Tahir Cagin, William A. Goddard, III Materials and Process Simulation Center, Caltech, Pasadena, CA 91125, U.S.A.

Polarization Control of Electron Tunneling into Ferroelectric Surfaces

Publication I. c 2010 American Physical Society. Reprinted with permission.

SUPPLEMENTARY MATERIAL

arxiv: v1 [cond-mat.mtrl-sci] 27 Aug 2012 Ferroelectricity in ultrathin film capacitors

Domain Structures in Epitaxial Ferroelectric Thin Films

PCCP PAPER. 1 Introduction TH Vladislav Borisov,* ab Sergey Ostanin b and Ingrid Mertig ab. View Article Online View Journal View Issue

Hermann Kohlstedt. Technical Faculty Nanoelectronics

Piezoelectric materials for MEMS applications Hiroshi Funakubo Tokyo Institute of Technology

Combining Ferroelectricity, Magnetism, and

Polarization Enhancement in Perovskite Superlattices by Oxygen. Octahedral Tilts

arxiv: v1 [cond-mat.mtrl-sci] 6 Sep 2011

Chapter 2 Domain Walls in Ferroelectric Materials 2.1 General Properties of Ferroelectrics

Ab initio study of ferroelectric domain walls in PbTiO 3

Introduction to solid state physics

G. Ravichandran Aeronautics & Mechanical Engineering Graduate Aeronautical Laboratories California Institute of Technology

The Siesta program for electronic structure simulations

Enhancement of Ferroelectric Polarization Stability by Interface Engineering

Ab initio study of ferroelectric domain walls in PbTiO 3

Ab initio study of ferroelectricity in BaTiO 3 nanowires

How to compute the Born effective charge tensor. Javier Junquera

Ferroelectric nanostructures for future high-density non-volatile memory applications - preparation methods, microstructure, and physical properties

Ferroelectric Phase Transition in Individual Single-Crystalline BaTiO 3 Nanowires

Strain-induced single-domain growth of epitaxial SrRuO 3 layers on SrTiO 3 : a high-temperature x-ray diffraction study

Screening mechanisms at polar oxide heterointerfaces

Ferroelectricity. Phase transition. Material properties. 4/12/2011 Physics 403 Spring

Electronic structure of barium titanate : an abinitio DFT study. Hong-Jian Feng, Fa-Min Liu

Nanoxide electronics

AN ABSTRACT OF THE DISSERTATION OF. Dennis L. Jackson for the degree of Doctor of Philosophy in Physics

Ferroelectricity. Phase transition. Material properties

Domain Nucleation And Relaxation Kinetics In Ferroelectric Thin Films. Ramesh

Electrostatic charging and redox effects in oxide heterostructures

Supplementary Information for Dimensionality-Driven. Insulator-Metal Transition in A-site Excess. Nonstoichiometric Perovskites

SUPPLEMENTARY INFORMATION

Chapter 134 : First-Principles Modeling of Ferroelectric Oxides Nanostructures

Epitaxial piezoelectric heterostructures for ultrasound micro-transducers

Dielectric permittivity of ultrathin PbTiO 3 nanowires from first principles

What so special about LaAlO3/SrTiO3 interface? Magnetism, Superconductivity and their coexistence at the interface

Nanoxide electronics

A First Principles Study on Oxide Interfaces

Classification of Dielectrics & Applications

Roger Johnson Structure and Dynamics: Displacive phase transition Lecture 9

Applications of Structure Optimization and Forces in the LAPW Method

Colossal electroresistance in metal/ferroelectric/semiconductor. tunnel diodes for resistive switching memories

Ferroelectricity in artificial bicolor oxide superlattices**

Stability of the polydomain state in epitaxial ferroelectric PbTiO3 films

Effect of interfacial dislocations on ferroelectric phase stability and domain morphology in a thin film a phase-field model

Studies of Perovskite Materials for High Performance Piezoelectrics and Non- Volatile Memory

Strain Tuning of Ferroelectric Thin Films

Introduction to Density Functional Theory with Applications to Graphene Branislav K. Nikolić

Towards ferroelectrically-controlled magnetism: Magnetoelectric effect in Fe/BaTiO 3 multilayers

Holcomb Group Capabilities

Ferroelectricity and Antiferroelectricity in Elemental Group-V Monolayer Materials

Fabrication and Characterization of Ferroelectric Nanomesas: A Scanning Probe Approach

Smart elastomers a touch of robotics

Theory of structural response to macroscopic electric fields in ferroelectric systems

Ab initio study of Mn doped BN nanosheets Tudor Luca Mitran

Control of periodic ferroelastic domains in ferroelectric Pb1-xSrxTiO3 thin films for nanoscaled

Ferroelectric materials contain one or more polar axes along which a spontaneous

in this web service Cambridge University Press

Structural dynamics of PZT thin films at the nanoscale

Atomic orbitals of finite range as basis sets. Javier Junquera

Density Functional Theory (DFT) modelling of C60 and

Supplementary Material for

Tunneling electroresistance effect in ferroelectric tunnel junctions at the

arxiv: v1 [cond-mat.mtrl-sci] 23 Oct 2013

Magnetic tunnel junctions based on ferroelectric Hf 0.5Zr 0.5O 2 tunnel barriers

University of Munich, Theresienstr. 41, Munich, Germany and b Department of Physics, University of California,

Potentials, periodicity

Engineering of Self-Assembled Domain Architectures with Ultra-high Piezoelectric Response in Epitaxial Ferroelectric Films**

Depth profile study of ferroelectric PbZr 0.2 Ti 0.8 O 3 films

PHASE-FIELD SIMULATION OF DOMAIN STRUCTURE EVOLUTION IN FERROELECTRIC THIN FILMS

This is an electronic reprint of the original article. This reprint may differ from the original in pagination and typographic detail.

I. B. Misirlioglu*, M. Yildiz. Faculty of Engineering and Natural Sciences, Sabanci University, Tuzla/Orhanli, Istanbul, Turkey.

Effect of substrate-induced strains on the spontaneous polarization of epitaxial BiFeO 3 thin films

Ferroelectricity in Strain-Free SrTiO 3 Thin Films

1. Chapter 1: Introduction

Supporting Information for PbTiO 3

File Name: Supplementary Information Description: Supplementary Figures, Supplementary Table, Supplementary Notes and Supplementary References.

6. Computational Design of Energy-related Materials

Geometric frustration in compositionally modulated ferroelectrics

arxiv:cond-mat/ v1 [cond-mat.stat-mech] 27 Sep 2006

Effects of substrate on the dielectric and tunable properties of epitaxial SrTiO 3 thin films

Supporting Information

Materials and Devices in Electrical Engineering

The Pennsylvania State University. The Graduate School. College of Earth and Mineral Sciences PHASE TRANSITIONS IN EPITAXIAL RHOMBOHEDRAL

Supporting Information: Selective Electrochemical Generation of. Hydrogen Peroxide from Water Oxidation

Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect

The Pennsylvania State University. The Graduate School. Materials Science and Engineering FILMS FOR LEAD FREE DIELECTRIC APPLICATIONS.

Patrick E. Hopkins Assistant Professor Dept. Mech. & Aero. Eng.

Supporting Information. Designing a Lower Band Gap Bulk Ferroelectric Material with a Sizable. Polarization at Room Temperature

Size Effects in Ferroelectrics (and some reference to ferroics in general) Marty Gregg Queen s University Belfast

arxiv:cond-mat/ v1 [cond-mat.dis-nn] 19 Mar 2002

A new era in surface diffraction pulsed laser deposition of complex metal oxide thin films

Transcription:

From 180º stripe domains to more exotic patterns of polarization in ferroelectric nanostructures. A first principles view Pablo Aguado-Puente Javier Junquera

Ferroelectricity: Basic definitions Existence of two or more states with a non-zero polarization in the absence of an electric field Can be shifted from one to another of these states by the application of an electric field Hysteresis loop Double well energy Soft-mode

Technological applications: ABO 3 perovskites oxides as multifunctional materials O. Auciello et al., Physics Today July 1998, 22-27

Many applications depend on the stability of films with a switchable polarization along the film normal NV-FRAM perovskite oxide (PZT,BST) 28 Gbit/cm 2 Line width < 20nm metal (SrTiO 3 -Nb, SrRuO 3,Pt) 100 nm is there a fundamental limit?

Ferroelectricity is a collective effect with delicate balance between short and long range interactions Both interactions strongly affected in small particles and thin films Finite size effect: a subtle problem

Fundamental motivation: what s the most stable phase for epitaxial ferroelectric ultrathin films? Long time question. Hot field. Karasawa (PTO) Li et al. (PZT) Marayuma (PZT) Bune et al. (PVDF) Tybell (PZT) Ghosez and Rabe (PTO) Pertsev (PTO) Streiffer (PTO) Junquera and Ghosez (BTO) Streiffer (PTO) 1 0 8 6 4 2 (nm) 1 0 0 1 0 Courtesy of H. Kohlstedt 1 1 9 7 0 1 9 7 5 1 9 8 0 1 9 8 5 1 9 9 0 1 9 9 5 2 0 0 0 0 1 9 9 6 1 9 9 7 1 9 9 8 1 9 9 9 2 0 0 0 2 0 0 1 2 0 0 2 2 0 0 3 Thickness Limit (nm) Batra and Silverman (TGS) Sayer (PZT) J. Scott (PZT) Symetrix (PZT) Li (BTO) Yanase (PZT) Yoneda (BTO) Y e a r o f P u b lic a tio n PTO: PbTiO 3 PZT: Pb(Zr,Ti)O 3 BTO: BaTiO 3 TGS: tryglycine sulphate PVDF: Ferroelectric polymer? Ph. Ghosez and J. Junquera, First-Principles Modeling of Ferroelectric Oxide Nanostructures, Handbook of Theoretical and Computational Nanotechnology, Vol. 9, Chap. 13, 623-728 (2006) (http://xxx.lanl.gov/pdf/cond-mat/0605299) and references therein.

Many effects might alter the delicate balance between long and short range forces Surface Chemistry Defects (vacancies, misfit dislocations ) Finite conductivity Mechanical Electrostatic Experimental measurements, global result

Experimentally: small changes in boundary conditions, great changes in ground state a d d PbTiO 3 SrTiO 3 (insulator) D. D. Fong et al. (2004) S. K. Streiffer et al. (2002) PbTiO 3 Nb-SrTiO 3 (metal) C. Lichtensteiger et al. (2005) A. T. J. van Helvoort et al. (2005) d PbTiO 3 SrTiO 3 (insulator) SrRuO 3 PbZr 0.2 Ti 0.8 O 3 SrRuO 3 SrTiO 3 D. D. Fong et al. (2005) V. Nagarajan et al. (2006)

First-principles calculations allow to isolate their respective influence Surface Chemistry Defects (vacancies, misfit dislocations ) Finite conductivity Mechanical Electrostatic

Strain imposed by the substrate affects the properties of ferroelectric materials a o a misfit strain u m = (a-a o )/a o Typical picture: Compressive strain tetragonal c Tensile strain orthorrombic aa BaTiO 3 /SrTiO 3 Yoneda et al., J. Appl. Phys. 83, 2458 (1998) K. J. Choi et al., Science 306, 1005 (2004)

Mechanisms for screening of the polarization charge Vacuum no screening + + + P - - - E d = - 4 π P Screening by free charges (electrodes or adsorbates) electrode Formation of domains (no net charge at surface) electrode or substrate E d P electrode electrode or substrate

Imperfect screening by real metallic electrodes produces a depolarizing field Vacuum no screening Real electrodes imperfect screening Ideal electrodes perfect screening + + + P - - - - - + + + P - - - + + - - - + + + P - - - + + + E d = - 4 π P E d = - 4 π α P E d = 0 Depolarizing field E d : E d = -2 V / d V = 4 πσ pol λ eff σ pol = P n E d = - 4 π.[ 2. λ eff / d ] P depends on: α - the metal and interface chemistry: screening length λ eff - the ferroelectric: the spontaneous polarization P - the film thickness. d

Simulations of ferroelectric nanocapacitors from first-principles Thickness: m number of BTO cells Polarization control: ξ percentage bulk soft mode J. Junquera and Ph. Ghosez, Nature 422, 506 (2003) ξ=0 ξ=1

Existence of a critical thickness in monodomain films DFT versus model results E = U - E d.p Minima below bulk (ξ = 1) P s deduced from ξ min Behavior can be explained by electrostatic effects. The chemistry of the interface buried in λ eff.

Twofold effect of the depolarizing field in monodomain films E d = - 4 π α P E = U - E d P Below the critical thickness: suppression of the ferroelectricity Above the critical thickness: reduction of spontaneous polarization J. Junquera and Ph. Ghosez, Nature 422, 506 (2003) Y. S. Kim et al., Appl. Phys. Lett. 86, 102907 (2005)

Many DFT first-principles computations on size effects in ferroelectric ultrathin films

Many DFT first-principles computations on size effects in ferroelectric ultrathin films

Be careful with the functional used GGA overestimates tetragonality and doublewell depth in bulk PbTiO 3 responsible for the absence of critical thickness in PbTiO 3 nanocapacitors? Y. Umeno et al., Phys. Rev. B 74 060101 (2006)

Until today, monodomain studies, goal of this work: ab initio multidomain simulations real electrode bulk Uniform reduction of the polarization E d P real electrode P real electrode Break down into domains Present work real electrode Full first-principles simulation using Explicitly included electrodes.

Building the cell: the paraelectric unit cell Building the reference cell following the scheme of Junquera and Ghosez (2003). Short-circuit boundary conditions Sr Ru Mirror symmetry plane [001] SrRuO 3 BaTiO 3 SrRuO 3 SrTiO 3 m = 2 unit cells O Ti Ba [100] a = a SrTiO3 N at = 40 atoms

Building the cell: replicating the paraelectric structure N x repetitions in [100] direction. The energies of these cells as references. N at = N x 40 atoms

Building the cell: inducing a polarization by hand Chosing a domain wall. Inducing a polarization by hand in the FE layer displacing the atoms a percentage of the bulk soft mode. Twinning on both BaO (Ba-centered) TiO2 (Ti-centered) N at = N x 40 atoms

Relaxing all the atomic coordinates, both in the ferroelectric layer and the electrodes Forces smaller than 0.01 ev/å No constraints impossed on the atomic positions

Polydomain phases more stable than paraelectric structure for 2 < N x < 8 2-unit-cells thick BaTiO 3 layer Polar domains stabilized below critical thickness for the monodomain configuration

Polydomain phases more stable than paraelectric structure for 2 < N x < 8 2-unit-cells thick BaTiO 3 layer Polar domains stabilized below critical thickness for the monodomain configuration As 180º domains in bulk, Ba centered domain wall preferred

Polydomain phases more stable than paraelectric structure for 2 < N x < 8 2-unit-cells thick BaTiO 3 layer Polar domains stabilized below critical thickness for the monodomain configuration As 180º domains in bulk, Ba centered domain wall preferred No energy difference between N x = 4 and N x = 6 Both of them might be equally present in an sample (α and β phases in PbTiO 3 /SrTiO 3 interfaces?) D. D. Fong et al., Science 304, 1650 (2004)

Polydomain phases adopt the form of a domain of closure, common in ferromagnets N x = 4 BaO domain walls N x = 4 BaO domain walls Ferromagnetic domains C. Kittel (1971)

Polydomain phases adopt the form of a domain of closure, common in ferromagnets N x =4 BaO wall 2-unit-cells thick BaTiO 3 layer N x =6 BaO wall TiO 2 wall TiO 2 wall

SrO layer at the interface behaves more like SrTiO 3 than SrRuO 3 highly polarizable Projected Density of States in the reference paraelectric structure

Resulting phases show in-plane displacements and small polarization N x = 4 BaO domain walls Small polarization inside the domains About 1/10 of bulk soft-mode polarization

In-plane displacements are essential to stabilize the domains In-plane displacements: ON In-plane displacements: OFF When in-plane coordinates are fixed, structure goes back to the paraelectric phase

Relevant energy differences very small in the ultrathin m = 2 capacitors N x = 4

Relevant energy differences increase with thickness Monodomain N x = 4 Ti-centered domains Ba-centered domains

Transition from vortices to standard 180º domains. 4-unit-cell thick layer, great increase in polarization

In-plane displacements, essential to stabilize domains Monodomain In-plane constraint N x = 4 Ti-centered domains Ba-centered domains

Changing the electrode, the ground state of PbTiO 3 changes from monodomain to polydomain Lichtensteiger, et al. Lichtensteiger, Triscone, Junquera, Ghosez.

Analysis of the electrostatic potential: large field in x at the interface, residual depolarizing field in z Pinning of charged defects at interface? role on fatigue? Two unit cells thick of BaTiO 3

Conclusions Polydomain phases in ultrathin FE films are stabilized below critical thickness in monodomain configurations. The chemical interaction through the interface is an essential factor since it affects the in-plane mobility of the atoms. Closure domains in FE capacitors are predicted (recently detected expt. in FE ultrathin films by Scott). Slides available at: http://personales.unican.es/junqueraj Contact: pablo.aguado@unican.es javier.junquera@unican.es

More information

Method: Computational details First-principles calculations within Kohn-Sham Density Functional Theory (DFT) http://www.uam.es/siesta J. M. Soler et al., J. Phys. Condens. Matter 14, 2745 (2002) : Numerical Atomic Orbital DFT code. Exchange-correlation functional : LDA, fit to Ceperley-Alder data Norm conserving pseudopotentials: Ti, Sr, Ba, Ru: semicore in valence Basis set: NAO: valence: Double-ζ + Polarization ; semicore: Single-ζ Real-space grid cutoff : 400 Ry k-point grid : equivalent to 12x12x12 for simple cubic perovskite Supercell geometry

Ferroelectric layer: fundamental parameters of the simulations FE layer: N x repetitions in [100] direction and m cells in [001] direction m = layer thickness N x = domain period N x from 2 to 8 cells m from 2 to 4 cells FE layer made of BaTiO 3. Domain wall in BaO and TiO 2

Very small energy differences, very accurate simulations needed m=2, N x = 4 BaO domain walls Structure Paraelectric Multidomain Total Energy (ev) -138326.083054-138326.084463 (E-Epara)/Nx = -0.00035 ev

Analysis of the electrostatic potential: huge field in x at the interface, residual depolarizing field in z Four unit cells thick of BaTiO 3