Product Family Data Sheet Rev. 1.1 216.4.21 1# High Voltage LED Series Chip on Board LC6D High efficacy COB LED package well-suited for use in spotlight applications Features & Benefits Chip on Board (COB) solution makes it easy to design in Simple assembly reduces manufacturing cost Low thermal resistance InGaN/GaN MQW LED with long time reliability Applications Spotlight / Downlight LED Retrofit Bulbs Outdoor Illumination
2 Table of Contents 1. Characteristics ----------------------- 3 2. Product Code Information ----------------------- 5 3. Typical Characteristics Graphs ----------------------- 9 4. Outline Drawing & Dimension ----------------------- 12 5. Reliability Test Items & Conditions ----------------------- 13 6. Label Structure ----------------------- 14 7. Packing Structure ----------------------- 15 8. Precautions in Handling & Use ----------------------- 17
3 1. Characteristics a) Absolute Maximum Rating Item Symbol Rating Unit Condition Ambient / Operating Temperature T a -4 ~ +15 ºC - Storage Temperature T stg -4 ~ +12 ºC - LED Junction Temperature T J 14 ºC - Case Temperature Tc 15 ºC Forward Current I F 32 ma - Power Dissipation P D 17.2 W - ESD (HBM) - ±2 kv - ESD (MM) - ±.5 kv - b) Electro-optical Characteristics (I F = 18 ma, T J = 85 ºC) Item Unit Rank Min. Typ. Max. Forward Voltage (V F) V 31.8 34.6 37.5 Color Rendering Index (R a) - 5 8 - - 7 9 Thermal Resistance (junction to chip point) ºC/W - 2.4 - Beam Angle º - 115 - Nominal Power W 6.4 Notes: 1) The COB is tested in pulsed condition at rated test current (1 ms pulse width) and rated temperature (T J = T C = T a = 85 C) 2) Samsung maintains measurement tolerance of: forward voltage = ±5 %, CRI = ±1 3) Refer to the derating curve, 3. Typical Characteristics Graph designed within the range.
4 c) Luminous Flux Characteristics (I F = 18 ma) CRI (R a) Min. Nominal CCT (K) Flux Rank Flux @ T J = 85 C (lm) Min. Typ. Max. 27 E9 791 832 - D1 832 874-3 F3 831 875 - D1 875 919-35 F5 857 92 - D1 92 947-8 4 F8 877 923 - D1 923 969-5 F8 882 928 - D1 928 975-57 F8 882 928 - D1 928 975-65 F8 872 918 - D1 918 964 - CRI (R a) Min. Nominal CCT (K) Flux Rank Flux @ T J = 85 C (lm) Min. Typ. Max. 27 D7 673 79 - D1 79 744-9 3 35 E9 76 743 - D1 743 78 - E 73 768 - D1 768 87-4 E4 745 784 - D1 784 824 - Notes: 1) The COB is tested in pulsed operating condition at rated test current (1 ms pulse width) and rated temperature (T j = T c = 85 C). 2) Samsung maintains measurement tolerance of: Luminous flux = ±7 %, CRI = ±1
5 2. Product Code Information 1 2 3 4 5 6 7 8 9 1 11 12 13 14 15 16 17 18 S P H W H A H D N B 2 5 Y Z W 3 E 9 Digit PKG Information Code Specification 1 2 3 Samsung Package High Power SPH 4 5 Color WH Warm White 6 Product Version A 7 8 Form Factor HD COB 9 Lens Type N No lens 1 Internal Code B LC6D 11 Chip Type 2 12 CRI & Sorting Temperature 5 Min. 8 (85 ) 7 Min. 9 (85 ) 13 14 Forward Voltage (V) 31.8~37.5 15 CCT (K) W V U T R Q P 27K 3K 35K 4K 5K 57K 65K 16 MacAdam Step 17 18 Luminous Flux (Lm) 2 MacAdam 2-step 3 MacAdam 3-step D7 Min. 67 E Min. 7 E4 Min. 74 E9 Min. 79 F3 Min. 83 F5 Min. 85 F7 Min. 87 F8 Min. 88 D1 Add Rank
6 a) Binning Structure (I F = 18 ma, T J = 85 ºC) CRI (R a) Min. Nominal CCT (K) Product Code V F Rank Color Rank Chrom. Bin Flux Rank Flux Range (Φ v, lm) 27 SPHWHAHDNB25W2E9 W2 W2 SPHWHAHDNB25W3E9 W3 W3 SPHWHAHDNB25W2D1 W2 W2 SPHWHAHDNB25W3D1 W3 W3 E9 791 ~ D1 832 ~ 3 SPHWHAHDNB25V2F3 V2 V2 SPHWHAHDNB25V3F3 V3 V3 SPHWHAHDNB25V2D1 V2 V2 SPHWHAHDNB25V3D1 V3 V3 F3 831 ~ D1 875 ~ 8 35 SPHWHAHDNB25U2F5 U2 U2 SPHWHAHDNB25U3F5 U3 U3 SPHWHAHDNB25U2D1 U2 U2 SPHWHAHDNB25U3D1 U3 U3 F5 857 ~ D1 92 ~ 4 SPHWHAHDNB25T2F8 T2 T2 SPHWHAHDNB25T3F8 T3 T3 SPHWHAHDNB25T2D1 T2 T2 SPHWHAHDNB25T3D1 T3 T3 F8 877 ~ D1 923 ~ 5 SPHWHAHDNB25R3F8 R2 R2 F8 882 ~ SPHWHAHDNB25R3F8 R3 R3 D1 928 ~ 57 SPHWHAHDNB25Q3F8 Q2 Q2 F8 882 ~ SPHWHAHDNB25Q3F8 Q3 Q3 D1 928 ~ 65 SPHWHAHDNB25P3F7 P2 P2 F7 872 ~ SPHWHAHDNB25P3F7 P3 P3 D1 918 ~
7 CRI (R a) Min. Nominal CCT (K) Product Code V F Rank Color Rank Chrom. Bin Flux Rank Flux Range (Φ v, lm) SPHWHAHDNB27W2D7 W2 W2 D7 673 ~ SPHWHAHDNB27W3D7 W3 W3 27 SPHWHAHDNB27W2D1 W2 W2 D1 79 ~ SPHWHAHDNB27W3D1 W3 W3 SPHWHAHDNB27V2E9 V2 V2 E9 76 ~ SPHWHAHDNB27V3E9 V3 V3 3 SPHWHAHDNB27V2D1 V2 V2 D1 743 ~ SPHWHAHDNB27V3D1 V3 V3 9 SPHWHAHDNB27U2E U2 U2 E 73 ~ SPHWHAHDNB27U3E U3 U3 35 SPHWHAHDNB27U2D1 U2 U2 D1 768 ~ SPHWHAHDNB27U3D1 U3 U3 SPHWHAHDNB27T2E4 T2 T2 E4 745 ~ SPHWHAHDNB27T3E4 T3 T3 4 SPHWHAHDNB27T2D1 T2 T2 D1 784 ~ SPHWHAHDNB27T3D1 T3 T3
8 b) Chromaticity Region & Coordinates (I F = 18 ma, T J = 85 ºC) θ CIE x,y MacAdam Ellipse (W2, W3) MacAdam Ellipse (V2, V3) Step CIE x CIE y θ a b Step CIE x CIE y θ a b 2-step.4578.411 53.7.54.28 2-step.4338.43 53.22.56.27 3-step.4578.411 53.7.81.42 3-step.4338.43 53.22.83.41 MacAdam Ellipse (U2, U3) MacAdam Ellipse (T2, T3) Step CIE x CIE y θ a b Step CIE x CIE y θ a b 2-step.473.3917 54..62.28 2-step.3818.3797 53.72.63.27 3-step.473.3917 54..93.41 3-step.3818.3797 53.72.94.4 MacAdam Ellipse (R3) MacAdam Ellipse (Q3) Step CIE x CIE y θ a b Step CIE x CIE y θ a b 3-step.3447.3553 59.62.82.35 3-step.3287.3417 59.95.75.32 MacAdam Ellipse (P3) Step CIE x CIE y θ a b 3-step.3123.3282 58.57.67.29 Note: Samsung maintains measurement tolerance of: Cx, Cy = ±.5
9 3. Typical Characteristics Graphs b) Beam Angle Characteristics (I F = 18 ma, T J = 85 ºC) CCT: 27 K (8 CRI) CCT: 3 K (8 CRI) Relative Intensity vs. Wavelength Relative Intensity vs. Wavelength Relative Emission Intensity(%) 1 8 6 4 2 4 5 6 7 8 Wavelength Relative Emission Intensity(%) 1 8 6 4 2 4 5 6 7 8 Wavelength(nm) CCT: 35 K (8 CRI) CCT: 4 K (8 CRI) Relative Intensity vs. Wavelength Relative Intensity vs. Wavelength Relative Emission Intensity(%) 1 8 6 4 2 4 5 6 7 8 Wavelength Relative Emission Intensity(%) 1 8 6 4 2 4 5 6 7 8 Wavelength CCT: 5 K (8 CRI) CCT: 57 K (8 CRI) Relative Intensity vs. Wavelength Relative Intensity vs. Wavelength Relative Emission Intensity(%) 1 8 6 4 2 4 5 6 7 8 Wavelength Relative Emission Intensity(%) 1 8 6 4 2 4 5 6 7 8 Wavelength
1 CCT: 65 K (8 CRI) Relative Emission Intensity(%) Relative Intensity vs. Wavelength 1 8 6 4 2 4 5 6 7 8 Wavelength b) Forward Current Characteristics (T J = 85 ºC) Relative luminous Flux vs. Forward Current Forward Voltage vs. Forward Current Relative Luminous Flux(%) 4 3 2 1.1.2.3.4.5 Forward Current(A) Forward Voltage(V) 45 4 35 3.1.2.3.4.5 Forward Current(A) C) Temperature Characteristics (I F = 18mA) Relative Luminous Flux vs. Temperature Forward Voltage vs. Temperature Relative Luminous Flux(%) 15 1 95 9 85 8 2 4 6 8 1 Forward Voltage(V) 36.5 36. 35.5 35. 34.5 34. 33.5 33. 2 4 6 8 1 Tc( ) Tc( )
11 d) Color Shift Characteristics (TJ = 85 ºC, CRI 8+) CIE x, CIE y vs. Forward Current CIEx, CIEy vs. Temperature CIE x, CIE y -.1 -.2 -.3 CIE x -.4 CIE y -.5..1.2.3.4.5 Forward Current(A) CIE x, CIE y -.1 -.2 -.3 ΔCIE x -.4 ΔCIE y -.5 2 4 6 8 1 Tc( ) e) Beam Angle Characteristics (I F = 18 ma, T J = 85 ºC) Relative Luminous Intensity 1.2 1.8.6.4.2-1 -8-6 -4-2 2 4 6 8 1 Angle( )
12 4. Outline Drawing & Dimension Tc 1. Unit: mm 2. Tolerance: ±.3 mm Item Dimension Tolerance Unit Length 13.5 ±.15 mm Width 13.5 ±.15 mm Height 1.5 ±.2 mm Light Emitting Surface (LES) Diameter 14.5 ±.15 mm Note: Denoted product information above is only an example ( LC6D, CRI8+, 3K )
13 5. Reliability Test Items & Conditions a) Test Items Test Item Test Condition Test Hour / Cycle High Temperature Humidity Life Test High Temperature Life Test Low Temperature Life Test 6 ºC, 9 % RH,, DC Derating, I F 1 h 85 ºC, DC Derating, I F 1 h -4 ºC, DC, I F = 32 ma 1 h Pulsed Operating Life Test 55, Pulse width 1 μs, duty cycle 3 % 1 h High Temperature Storage Low Temperature Storage Temperature Humidity Storage 12 ºC 1 h -4 ºC 1 h 6 ºC, 9% RH 1h Temperature Cycle On/Off Test ESD (HBM) -4 ºC / 85 ºC each 2 min, 3 min transfer power on/off each 5 min, DC Derating, I F = max R 1: 1 MΩ R 2: 1.5 kω C: 1 pf V: ±2 kv 1 cycles 5 times ESD (MM) R 1: 1 MΩ R 2: kω C: 2 pf V: ±.2 kv 5 times Vibration Test 2 ~ 8 Hz (displacement:.6 inch, max. 2 g) 8 ~ 2 khz (max. 2 g) min. frequency max. frequency 4 min transfer 4 times Mechanical Shock Test 15 g,.5 ms each of the 6 surfaces (3 axis x 2 sides) 5 times Sulfur Resistance 25 C, 75%, H2S 15 ppm 54h b) Criteria for Judging the Damage Item Symbol Test Condition (T c = 25 ºC) Min. Limit Max. Forward Voltage V F I F = 18 ma L.S.L. *.9 U.S.L. * 1.1 Luminous Flux Φ v I F = 18 ma L.S.L *.7 U.S.L * 1.3
14 6. Label Structure a) Label Structure abcdef W3E9 SPHWHAHDNB25W3E9 W3E9 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII G4AZC41 / 11 / xxxx pcs IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Lot Number Bin Code Product Code Note: Denoted bin code and product code above is only an example (see description on page 5) Bin Code: ab: Forward Voltage bin (refer to page 11) cd: Chromaticity bin (refer to page 9-1) ef: Luminous Flux bin (refer to page 6) b) Lot Number The lot number is composed of the following characters: W3E9 SPHWHAHDNB25W3E9 W3E9 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 123456789/1abc/ xxxx pcs IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 1 3456789 / 1abc / xxxx pcs 1 2 3 4 : Production site (S: Giheung, Korea, G: Tianjin, China) : 4 (LED) : Product state (A: Normal, B: Bulk, C: First Production, R: Reproduction, S: Sample) : Year (Z: 215, A: 216, B: 217 ) 5 : Month (1~9, A, B, C) 6789 : Day (1~9, A, B~V) abc : Product serial number (1 ~ 999)
15 7. Packing Structure Max. quantity Dimension(mm) Packing material in pcs of COB Length Width Height Tolerance Tray 3 16 18 1 1. Aluminum Bag 6(2 trays) 21 241 1 Inner Box 24 23 84 26 2 Outer Box 24 476 445 272 5 a) Packing Structure Label Label
16 b) Tray 1 Cover 2 Body c) Aluminum Vinyl Packing Bag
17 8. Precautions in Handling & Use 1) This device should not be used in any type of fluid such as water, oil, organic solvent, etc. When cleaning is required, IPA is recommended as the cleaning agent. Some solvent-based cleaning agent may damage the silicone resins used in the device. 2) LEDs must be stored in a clean environment. If the LEDs are to be stored for three months or more after being shipped from Samsung, they should be packed with a nitrogen-filled container (shelf life of sealed bags is 12 months at temperature ~4 ºC, ~9 % RH). 3) After storage bag is opened, device subjected to soldering, solder reflow, or other high temperature processes must be: a. Mounted within 672 hours (28 days) at an assembly line with a condition of no more than 3 ºC / 6 % RH, or b. Stored at <1 % RH 4) Repack unused products with anti-moisture packing, fold to close any opening and then store in a dry place. 5) Devices require baking before mounting, if humidity card reading is >6 % at 23 ± 5 ºC. 6) Devices must be baked for 1 hour at 6 ± 5 ºC, if baking is required. 7) The LEDs are sensitive to the static electricity and surge current. It is recommended to use a wrist band or antielectrostatic glove when handling the LEDs. If voltage exceeding the absolute maximum rating is applied to LEDs, it may cause damage or even destruction to LED devices. Damaged LEDs may show some unusual characteristics such as increase in leakage current, lowered turn-on voltage, or abnormal lighting of LEDs at low current. 8) VOCs (Volatile Organic Compounds) can be generated from adhesives, flux, hardener or organic additives used in luminaires (fixtures). Transparent LED silicone encapsulant is permeable to those chemicals and they may lead to a discoloration of encapsulant when they exposed to heat or light. This phenomenon can cause a significant loss of light emitted (output) from the luminaires. In order to prevent these problems, we recommend users to know the physical properties of materials used in luminaires and they must be carefully selected. 9) The resin area is very sensitive, please do not handle, press, touch, rub, clean, or pick by with tweezers on it. Instead, please pick at the handling area as indicated below.
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