ULTRAFAST SPECTROSCOPY OF CHEMICALLY SYNTHESIZED SEMICONDUCTOR NANOPARTICLES

Similar documents
Multiple Exciton Generation in Quantum Dots. James Rogers Materials 265 Professor Ram Seshadri

Materials as particle in a box models: Synthesis & optical study of CdSe quantum dots

Semiconductor quantum dots

Prediction of a Shape-Induced Enhancement in the Hole Relaxation in Nanocrystals

Spectroscopy of. Semiconductors. Luminescence OXFORD IVAN PELANT. Academy ofsciences of the Czech Republic, Prague JAN VALENTA

The effect of Auger heating on intraband carrier relaxation in semiconductor quantum rods

Intraband emission of GaN quantum dots at λ =1.5 μm via resonant Raman scattering

Nanostructured Semiconductor Crystals -- Building Blocks for Solar Cells: Shapes, Syntheses, Surface Chemistry, Quantum Confinement Effects

2004 Debye Lecture 3 C. B. Murray. Semiconductor Nanocrystals Quantum Dots Part 1

High-density femtosecond transient absorption spectroscopy of semiconductor nanoparticles. A tool to investigate surface quality*

Excitation Dynamics in Quantum Dots. Oleg Prezhdo U. Washington, Seattle

in core-shell semiconductor nanocrystals

Size-Dependent Biexciton Quantum Yields and Carrier Dynamics of Quasi-

Auger Processes in Nanosize Semiconductor Crystals

Impact Ionization Can Explain Carrier Multiplication in PbSe Quantum Dots

Supporting Information for: Heavy-Metal-Free Fluorescent ZnTe/ZnSe Nanodumbbells

interband transitions in semiconductors M. Fox, Optical Properties of Solids, Oxford Master Series in Condensed Matter Physics

Survey on Laser Spectroscopic Techniques for Condensed Matter

Some properties of spherical and rod-shaped semiconductor and metal nanocrystals*

Femtosecond Spectroscopy of Carrier Relaxation Dynamics in Type II CdSe/CdTe Tetrapod Heteronanostructures

Luminescence basics. Slide # 1

Light Amplification Using Inverted Core/Shell Nanocrystals: Towards Lasing in the Single-Exciton Regime

Applications of Quantum Dots to Biosensing

what happens if we make materials smaller?

Luminescence Process

Spin Dynamics in Single GaAs Nanowires

SUPPLEMENTARY INFORMATION

Nanostructured Semiconductor Crystals Building Blocks for Solar Cells: Shapes, Syntheses, Surface Chemistry, Quantum Confinement Effects

More Efficient Solar Cells via Multi Exciton Generation

Optical Spectroscopy of Single-Walled Carbon Nanotubes

Multiple exciton generation in semiconductor nanocrystals: Toward efficient solar energy conversion

Nanoscience galore: hybrid and nanoscale photonics

CdTe, CdTe/CdS Core/Shell, and CdTe/CdS/ZnS Core/Shell/Shell Quantum Dots Study. A dissertation presented to. the faculty of

University of Louisville - Department of Chemistry, Louisville, KY; 2. University of Louisville Conn Center for renewable energy, Louisville, KY; 3

Fluorescence Spectroscopy

Optical Properties of Semiconductors. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

Charge Transfer from n-doped Nanocrystals: Mimicking Intermediate Events in Multielectron Photocatalysis

Electronic and Optoelectronic Properties of Semiconductor Structures

Solar Cell Materials and Device Characterization

Fabrication of Core/Shell. structured Nanoparticles

Highly Efficient Multiple Exciton Generation in Colloidal PbSe and PbS Quantum Dots

Electromagnetically Induced Transparency (EIT) via Spin Coherences in Semiconductor

Q. Shen 1,2) and T. Toyoda 1,2)

doi: /PhysRevLett

Energy relaxation in CdSe nanocrystals: the effects of morphology and film preparation

Time resolved optical spectroscopy methods for organic photovoltaics. Enrico Da Como. Department of Physics, University of Bath

Journal of Photochemistry and Photobiology A: Chemistry 142 (2001)

Optical Properties of Solid from DFT

Light Amplification in the Single-Exciton Regime Using Exciton-Exciton Repulsion in Type-II Nanocrystal Quantum Dots

Tianle Guo, 1 Siddharth Sampat, 1 Kehao Zhang, 2 Joshua A. Robinson, 2 Sara M. Rupich, 3 Yves J. Chabal, 3 Yuri N. Gartstein, 1 and Anton V.

Lecture 6: Individual nanoparticles, nanocrystals and quantum dots

Optically-Pumped Ge-on-Si Gain Media: Lasing and Broader Impact

Dynamics of Intraband and Interband Auger Processes in Colloidal Core Shell Quantum Dots

INVESTIGATIONS OF Mn, Fe, Ni AND Pb DOPED

Scienza e Tecnologia dei Materiali Ceramici. Modulo 2: Materiali Nanostrutturati

Supporting Information. Polaron Self-localization in White-light. Emitting Hybrid Perovskites

Chapter 3 Properties of Nanostructures

CH676 Physical Chemistry: Principles and Applications. CH676 Physical Chemistry: Principles and Applications

Resonantly Excited Time-Resolved Photoluminescence Study of Self-Organized InGaAs/GaAs Quantum Dots

OPTICAL PROPERTIES AND SPECTROSCOPY OF NANOAAATERIALS. Jin Zhong Zhang. World Scientific TECHNISCHE INFORMATIONSBIBLIOTHEK

Supporting Information. A Facile Methodology for Engineering the Morphology of CsPbX 3 Perovskite Nanocrystals under Ambient Condition

Fabrication / Synthesis Techniques

Supporting Information

Light Interaction with Small Structures

THE DEVELOPMENT OF SIMULATION MODEL OF CARRIER INJECTION IN QUANTUM DOT LASER SYSTEM

III-V nanostructured materials synthesized by MBE droplet epitaxy

Optical Characterization of Solids

Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures

Role of Surface Chemistry on Charge Carrier Transport in Quantum Dot Solids

Bright and dark exciton transfer in quantum dot arrays Anna Rodina

Part II. X-ray Absorption Spectroscopy (XAS)

Lifetime and polarization of the radiative decay of excitons, biexcitons, and trions in CdSe nanocrystal quantum dots

(002)(110) (004)(220) (222) (112) (211) (202) (200) * * 2θ (degree)

Title: Colloidal Quantum Dots Intraband Photodetectors

Characterization of chemically synthesized CdS nanoparticles

Electrically Driven Polariton Devices

Supporting Information

Deterministic Coherent Writing and Control of the Dark Exciton Spin using Short Single Optical Pulses

Intensity / a.u. 2 theta / deg. MAPbI 3. 1:1 MaPbI 3-x. Cl x 3:1. Supplementary figures

THz Spectroscopy of Nanoscale Materials

LUMINESCENCE SPECTRA OF QUANTUM-SIZED CdS AND PbI 2 PARTICLES IN STATIC ELECTRIC FIELD

Transition from Molecular Vibrations to Phonons in Atomically Precise Cadmium Selenide Quantum Dots

Infrared Fluorescence of Lead Selenide Colloidal Quantum Dots

IOP Conference Series: Materials Science and Engineering. Related content OPEN ACCESS

Supplementary Materials

Electron spins in nonmagnetic semiconductors

Electron Relaxation in Colloidal InP Quantum Dots with Photogenerated Excitons or Chemically Injected Electrons

Quantum Dots in Frogs

All optical quantum computation by engineering semiconductor. macroatoms. Irene D Amico. Dept. of Physics, University of York

GeSi Quantum Dot Superlattices

Electroluminescence from Silicon and Germanium Nanostructures

SUPPLEMENTARY INFORMATION

Quantum Dots The Pennsylvania State University Quantum Dots 1

Columbia University in the City of New York

arxiv:cond-mat/ v1 [cond-mat.mes-hall] 17 Sep 1997

TRANSIENT PUMP PROBE ABSORPTION SPECTROSCOPY OF SEMICONDUCTOR NANOTETRAPODS

Summary lecture VI. with the reduced mass and the dielectric background constant

Three-Dimensional Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical. Interconnects

Nanoscale optical circuits: controlling light using localized surface plasmon resonances

Vibronic quantum dynamics of exciton relaxation/trapping in molecular aggregates

Transcription:

Summerschool on SEMICONDUCTOR QUANTUM DOTS: PHYSICS AND DEVICES Monte Verità, Ascona, Switzerland Sunday September 5, to Friday September 10, 2004 ULTRAFAST SPECTROSCOPY OF CHEMICALLY SYNTHESIZED SEMICONDUCTOR NANOPARTICLES M. CHERGUI Lab. of Ultrafast Spectroscopy EPF-Lausanne, SB/ISIC CH-1015 Lausanne Switzerland

Engineerable Optical Properties: CdSe Nanodots size: 2.3 nm λ = 470 nm size: 5.5 nm λ = 620 nm *Murray, C.B.; Norris, D.J.; M. Bawendi, M.G. J. Am. Chem. Soc. 1993, 115, 8706 *Bawendi, M. G. et al. J. Phys. Chem. B 1997, 101, 9463. *Hines, M.A.; Guyot-Sionnest, P. J. Phys. Chem. B. 1996, 100, 468.

Some potential applications Biological tags for imaging (Alivisatos et al) Electroluminescence from monolayers of CdSe NCs in organic devices (Coe et al, Nature 2002) Optically pumped CdSe NC s lasers (Eisler et al, APL 2002) Microring lasing (Malko et al, APL 2002) Single CdS nanowire electrically driven lasers (Duan et al, Nature 2002) Solar Energy research Quantum computing and information

Chemical Synthesis of QDs Inexpensive preparation, produces large quantities Chemical flexibility: II-VI, III-V, IV-VI elements (CdSe, CdS, CdTe, PbS, InP, PbSe, ) Control of Size: Monodisperse (size distribution 5%) Control of shape: Dots, Rods, Tetrapods, Rice grains, Cubes, etc High luminescence quantum yield up to 80% Functionalizeable surfaces for various applications Doping, immobilization in polymer matrices Self assembly in 2D and 3D-superlattices with controlled inter-particle spacing.

Control of Size: Monodisperse (size distribution 4%) 20 nm 50 nm CdSe nanodots

Chemical Synthesis: Control of Shape and Lattice structure Hexagonal lattice (Wurzite) Hexagons rod dot Cubic lattice (Zinc blende) Nucleation & growth in W form Nucleation in ZB & growth in W Nucleation & growth in ZB form Tetrahedra Tetrapods Cubes

Control of Shape: Dots, nanorods, tetrapods, etc CdSe Nanorods PbSe Nanocubes

Li & Wang, Nanoletters (2003) Control of lattice structure Hybrid ZB-W CdSe nanorods

Chemical synthesis of CdSe Nanoparticles Thermodynamic control: Zinc blende is the most stable form at lower temperature, Wurtzite is more stable in high temperature Kinetic control: Some polar facets are more stable in the presence of polar surfactant Factors which affect the shape of the nanocrystals: 1- Temperature 2- type of surfactant, and its concerntration 3- monomer concentrations Se powder is dissolved in TOP injected rapidly to a hot solution of CdO dissolved in surfactant or a mixture of surfactant such as TOPO, HPA, TDPA or ODPA at 300 C After size selective precipitation, the obtained particles dissolved in Hexane Murray, C. B.; Norris, D. J., Bawendi, M.G., JACS 1993; Xiaogang, P.; Manna, L.; Weidong Yang,Wickham, J.; Scher, E.; Kadavanich, A.; Alivisatos, A. P.,

Optical Properties EFFECTS OF QUANTUM CONFINEMENT: - Tunability of band gap - Discretization of energy levels size - Enhanced oscillator strengths E conduction conduction valence valence Ekimov et al, JOSA B (1993); Efros & Rosen, Ann. Rev. Mat. Sc. (2000)

Tonti et al, NanoLetters (submitted)

Emitted vs Scattered Light

Power dependence of total luminescence No changes in ns decay times over this power range! Son et al, PRL 2004

Summary Continuum due to absorption Continuum not due to ionization, or barrier (due to ligands) for electron escape too high. Intraband relaxation too fast (< 1ps) to allow for other channels Electron acceptors: Quenching of luminescence occurs at band edge states. High power excitation does not change lifetimes in nsec range. However, total yield of luminescence levels off. Dot dependence of luminescence yield for high powers suggests an Auger ionization channel. Luminescence quantum yield does not follow lifetime changes, i.e. sub-ensemble of dots that fluoresce.

Thebandedgestructure The eight-fold degeneracy of the lowest excited state (1S e,1s 3/2 ) in spherical dots, lifted by: 1- The particle shape 2- The crystal field of the hexagonal lattice 3- electron-hole exchange interaction Electron: s=1/2 (m s =±1/2) Hole: F=L+J Excitons: N=F+s (N m = ±2, ±1, 0) N, N m > Nirmal et al, PRL (1995); Efros et al, PR B (1996)

One colour Pump-Probe transient absorption measurements λ pump = 595 nm, 570 nm (far red edge of the first absorption band) Dot radius ~ 2 nm t = 50 fsec (55 mev spectral width)

I (arb. units) TA pump-probe I 1 595nm 577nm Anisotropy 0.40 0.35 0.30 0.25 0.20 0.15 rt () = I I I + 2I Anisotropy Anisotropy 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 1 10 100 time (ps) 595nm 577nm 0.10 0 50 100 150-200 -100 0 100 200 300 400 500 600 delay (fs) time (ps) 0.05 0.00 0 100 200 300 400 500 600 delay (fs) Signal mainly due to bleaching 210 cm -1 (165 fs) oscillation: LO mode of CdSe (Mittleman et al, PRB (1994)) Oscillations due to Impulsive Raman scattering and/or Excited state absorption contributions Damping time of coherences 1 ps Anisotropy decays in < 1 oscillation and stabilises at finite level

Summary Damping of oscillations due to multimode character of LO phonon (uncertainty ω introduces different frequencies) Damping of anisotropy due to changes in e.s. wavefunction in < 1 oscillation. At higher energy state mixing more dramatic, i.e. bigger loss of anisotropy. Thus interstate relaxation at band egde is very fast (< 160 fs). Implies that vibrational coherences are in the e.s.

Multiexcitonic effects In bulk, if ρ excitons > 1 exciton/excitonic volume metallic e-h plasma and reduced Coulomb interaction (e.g. SC-to-metal phase transition in Si, Johnson et al, PRL 2003) In QD s high confinement and several excitons are squeezed. Multiparticle interaction due to wf overlap Auger relaxation processes (Klimov et al, Zunger et al)

Multiexciton formation

1Pe 1Se 1S h 1P h Surface trap hole state (STS) Single exciton (i) Ground State Biexciton (ii) Negative Trion (iii) 1Pe 1Se STS STS 1S h 1P h Excited biexciton (iv) Charged biexciton (v) Triexciton (vi) Charged triexciton (vii) Tetraexciton (viii) Woggon et al, Phys. Rev. B (2003); Zunger et al, Phys. Rev. B (2000)

High power excitation: >1 exciton/dot High time resolution: Auger processes shorten the lifetime of Multiexcitons Power dependence studies Ultrafast time resolved photoluminescence

τ 20 ps τ 5 ps τ 10 ps τ 10 ps Wang et al, PRL 2003

Experimental set-up: Broad Band Femtosecond Photoluminescence up-conversion set-up or 500-700 nm (OPA) Wavelength range: 480 to 730 nm Time resolution: ~ 70 fs

Time-resolved luminescence of CdSe NDs of 3 nm diameter

Power dependence of Photoluminescence at t = 1ps Typically: 1-15 e-h pairs/dot 1.2 Normalized Intensity 1.0 0.8 0.6 0.4 0.2 0.0 0.32 mj/cm 2 3.2 mj/cm 2 6.4 mj/cm 2 16 mj/cm 2 steady fluorescence 2.0 2.2 2.4 Energy (ev) 2.6 2.8

Spectral decomposition 1Pe 1Se Neutral Biexciton 12-50 psec 5psec 1S h 1P h Single exciton ~25nsec Triexciton 3-5 psec Charged biexciton Bonati et al, PR B (submitted)

Summary Observation of : - neutral Biexcitons: E 25 mev, τ~ a 3 - Charged biexciton: E 130 mev, τ ~ a 3 - Neutral triexciton: E 70-150 mev for decreasing a - Exciton and trion: Almost overlapping Lifetimes and energies in agreement with Zunger and co-workers PRL 2003, PR B 2001

Acknowledgments Camilla Bonati Awos Al Salman Mona Mohamed Andreas Tortschanoff Dino Tonti Frank van Mourik of the