Operational lifetimes of organic light-emitting diodes dominated by Förster

Similar documents
Supporting Information

Room temperature phosphorescence vs thermally activated delayed fluorescence in carbazole pyrimidine cored compounds

Dihedral Angle Control of Blue Thermally-

g, 2.5 mol%) were placed in a sealed tube and then N-methylpyrrolidone (NMP) (1.00 ml)

Highly Efficient Blue Electroluminescence Using Delayed- Fluorescence Emitters with Large Overlap Density between Luminescent and Ground States

Supplementary Figure 1. Potential energy, volume, and molecular distribution of the

Inverted Quantum-dot Light-Emitting Diode with Solution-Processed Aluminum-Zinc- Oxide as Cathode Buffer

SUPPLEMENTARY INFORMATION

Review Article Efficiency Control in Iridium Complex-Based Phosphorescent Light-Emitting Diodes

Durham Research Online

High-efficiency deep-blue organic light-emitting diodes based on a thermally activated delayed fluorescence emitter

Management of singlet and triplet excitons for efficient white organic light-emitting devices

Electroluminescence from Silicon and Germanium Nanostructures

Supporting Information

Supporting Information

Supplementary Materials for

Device performance and carrier dynamics in blue mixing host organic light-emitting devices

E L E C T R O P H O S P H O R E S C E N C E

Molecular orientation in small-molecule organic light-emitting diodes

Supplementary Materials for

Modeling Electronic and Excitonic Processes in OLED Devices

SUPPLEMENTARY INFORMATION

OLEDs and PLEDs Nele Schumacher Incoherent Lightsources - Prof. Thomas Jüstel

Temperature dependence of the triplet diffusion and quenching rates in films of an Ir ppy 3 -cored dendrimer

We are IntechOpen, the world s leading publisher of Open Access books Built by scientists, for scientists. International authors and editors

Near-infrared organic light-emitting diodes with very high external quantum efficiency and radiance

Design of organic TADF molecules. The role of E(S 1 -T 1 ): From fluorescence to TADF and beyond - towards the fourth generation OLED mechanism.

1 Controlled emission colors and singlet triplet. 2 energy gaps of dihydrophenazine-based thermally. 3 activated delayed fluorescence emitters

Supporting Information for: Enhancing the Performance of CdSe/CdS Dot-in- Rod Light Emitting Diodes via Surface Ligand.

High Fluorescence Rate as a Key for Stable Blue Organic Light-Emitting Diodes

On the Properties and Design of Organic Light-Emitting Devices

Supporting Information: Poly(dimethylsiloxane) Stamp Coated with a. Low-Surface-Energy, Diffusion-Blocking,

High-efficiency diphenylsulfon derivatives-based organic lightemitting. diode exhibiting thermally activated delayed fluorescence

Electronic Supplementary Information. Iridium(III) phosphors with bis(diphenylphorothioyl)amide ligand for

Color-Stable and Low-Roll-Off Fluorescent White Organic Light Emitting Diodes Based on Nondoped Ultrathin Emitters

Surface Plasmon Enhanced Light Emitting Devices

High-efficiency phosphorescent polymer light-emitting devices

A six-carbazole-decorated cyclophosphazene as a host with high triplet energy to realize highly efficient delayed-fluorescence OLEDs

Supplementary Materials

Control of the Singlet Triplet Energy Gap in a Thermally Activated Delayed Fluorescence Emitter by Using a Polar Host Matrix

SUPPORTING INFORMATION

Rational Design of a blue TADF Emitter Family using a Trifluoromethylphenyl Core

Electrical control of near-field energy transfer between. quantum dots and 2D semiconductors

Supplementary Figure 1 Torsion angle (α) dependences of HOMO and LUMO

The Role of Molecular Structure And Conformation in TADF

Supporting Information

Electronic Supplementary Information for

Excimers and exciplexes in organic electroluminescence *

熊本大学学術リポジトリ. Kumamoto University Repositor

Luminescence. Photoluminescence (PL) is luminescence that results from optically exciting a sample.

arxiv: v2 [physics.chem-ph] 8 Apr 2016

Spiro-Configured Bifluorenes: Highly Efficient Emitter for UV Organic Light-Emitting Device and Host Material for Red Electrophosphorescence

Effect of intermolecular interactions on charge and exciplex formation in high-performance organic semiconductors

Supporting Information for. Near infrared-to-blue photon upconversion by exploiting direct. S-T absorption of a molecular sensitizer

single-molecule fluorescence resonance energy transfer

Electronic Supplementary Information

SUPPLEMENTARY INFORMATION

Triplet state diffusion in organometallic and organic semiconductors

Xinwen Zhang, 1 Zhaoxin Wu, 1 Dongdong Wang, 2 Dawei Wang, 1 Xun Hou 1

Electrically Driven White Light Emission from Intrinsic Metal. Organic Framework

Interaction mechanism for energy transfer from Ce to Tb ions in silica

Supporting information

Efficient Hybrid White Organic Light-Emitting Diodes for. Application of Triplet Harvesting with Simple Structure

COMMUNICATION. By Jinsong Huang, Taiki Watanabe, Kazunori Ueno, and Yang Yang* DOI: /adma

Supporting Information. Molecular Selectivity of. Graphene-Enhanced Raman Scattering

Photophysics and redox properties of aza-bodipy dyes with electronwithdrawing

Cyclometallated platinum(ii) complexes of 1,3-di(2-pyridyl)benzenes for solution-processable WOLEDs exploiting monomer and excimer phosphorescence

4. CV curve of GQD on platinum electrode S9

The efficient green emitting iridium(iii) complexes and phosphorescent organic light emitting diode characteristics

Fluorescence (Notes 16)

Syntheses and Physical Properties of Carbazole- Phthalonitrile-Hybridized Light-Emitting Materials

Semiconductor quantum dots

Supplementary Figures

Electrophosphorescence for Solid- State Lighting

Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides.

Electronic supplementary information

Highly Efficient and Anomalous Charge Transfer in van der Waals Trilayer Semiconductors

Engineering Challenges in Quantum Dot Displays

Stable and Efficient Sky-blue Organic Light Emitting Diodes Employing a Tetradentate Platinum Complex

Organic semiconductor heterointerfaces containing bathocuproine

ANTIMONY ENHANCED HOMOGENEOUS NITROGEN INCORPORATION INTO GaInNAs FILMS GROWN BY ATOMIC HYDROGEN-ASSISTED MOLECULAR BEAM EPITAXY

Device Engineering and Degradation Mechanism Study of All- Phosphorescent White Organic Light-Emitting Diodes

How does a polymer LED OPERATE?

Basic Photoexcitation and Modulation Spectroscopy

Chapter 6 Photoluminescence Spectroscopy

Enhancement of Light Outcoupling Efficiency in OLEDs

Supplementary information for the paper

Supplementary Information. Light Manipulation for Organic Optoelectronics Using Bio-inspired Moth's Eye. Nanostructures

Highly efficient organic light-emitting devices beyond theoretical prediction under high current density

Organic Solar Cells. All Organic solar cell. Dye-sensitized solar cell. Dye. τ inj. τ c. τ r surface states D*/D + V o I 3 D/D.

Supporting Information

Implementation of 3D model for generation of simulated EQE spectra

SUPPLEMENTARY INFORMATION

Novel OLEDs from Emissive Photopatterned Polymer Brushes

Electronic Supplementary Information. Highly Efficient Deep-Blue Emitting Organic Light Emitting Diode Based on the

Supplementary Information

Biologically Inspired Organic Light-Emitting Diodes

Nanoscience galore: hybrid and nanoscale photonics

Physical Chemistry Lab II CHEM 4644 Spring 2011 Final Exam 5 questions at 3 points each equals 15 total points possible.

Photonics applications II. Ion-doped ChGs

Transcription:

Operational lifetimes of organic light-emitting diodes dominated by Förster resonance energy transfer Hirohiko Fukagawa *, Takahisa Shimizu, Yukiko Iwasaki, and Toshihiro Yamamoto Japan Broadcasting Corporation (NHK), Science & Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan * Email: fukagawa.h-fe@nhk.or.jp, TEL: +81-3-5494-3254/FAX: +81-3-5494-3297 Contents Supplementary Section 1: Photoluminescence measurement data of 2c-Ph and Cz-Ph-TRZ. Supplementary Section 2: Thermal behaviour, energy diagram, determination of the optimal dopant concentration Supplementary Section 3: Comparison of device characteristics between PHOLEDs and host-only devices. Supplementary Section 4: Summary of PHOLED characteristics using PIC-TRZ2, DIC-TRZ and DIC-TRZ-Ph Supplementary Section 5: The accuracy of the lifetime values (LT50s). Supplementary Section 6: PHOLED characteristics using Cz-Ph-TRZ as host. Supplementary Section 7: Photophysical properties. Supplementary Section 8: Calculation of the maximum molecular radius Supplementary Section 9: Host-dependent lifetime (LT80) versus kfret. Supplementary Section 10: The device characteristics of PHOLEDs using TPyQB and PtN7N. 1

Supplementary Section 1 Fig. S1 (a) Transient PL curve of the 6 wt%-host-material:ad Cz [S1] films. (b) Fluorescence and phosphorescence spectra of 6 wt%-host-material:ad Cz films. Red and blue lines represent fluorescence spectra at 77 K and phosphorescence spectra at 77 K, respectively. The black dotted line represents the supporting line used to determine S 1 and T 1 energy. (c) HOMO/LUMO molecular orbital distribution obtained from the Gaussian09 program with B3LYP/6-31G(d,p) basis sets. As can be seen in Fig. S1(a), a clear delayed fluorescence is observed from 2c-Ph, whereas Cz-Ph-TRZ does not show a clear delayed fluorescence. That s because, the EST of Cz-Ph-TRZ is relatively large as compared to other TADF materials such as 2a, 2b, 2c and 2c-Ph [see Fig. S1(b) and Table 1 in the manuscript]. The orbital overlap between HOMO and LUMO in Cz-Ph-TRZ is also relatively large as compared to other TADF materials as shown in Fig. S1(c). 2

Supplementary Section 2 2-1 Thermal behaviour and energy diagram Fig. S2 (a) Differential scanning calorimetry of 2a, 2c and Cz-Ph-TRZ. (b) Chemical structures of the materials used in this study. (c) Energy level diagram of phosphorescent organic light-emitting diodes (PHOLEDs). The HOMO level was estimated from spectroscopic measurements of photoemission in air (AC-3, Rikenkeiki). The LUMO level was estimated by subtracting the optical band gap (Eg) from the HOMO level. The optical band gap was estimated using the cut-off wavelength of the absorption peak. The HOMO/LUMO values of hosts estimated by using Gaussian 09 program are also shown for reference. 3

2-2 Determination of the optimal dopant concentration Table S2: Summary of PHOLED characteristics with different dopant concentrations. Host Dopant concentration (wt%) Dopant concentration (mol%) EQE (%) [@J = 1] Estimated LT50 (h) 2a 1 1.58 18.9 1,200 2a 3 4.69 19.5 1,260 2a 6 9.23 17 1,260 2b 1 1.15 20.4 8,600 2b 3 3.44 20 11,000 2b 6 6.87 18.7 9,500 EQE: external quantum efficiency LT50: the time for the luminance to decay to 50% of the initial luminance of 1,000 cd m 2 The optimal dopant concentration was carefully determined by fabricating PHOLEDs with different dopant concentrations as shown in Table S2. The table shows that the optimal dopant concentration in the PHOLEDs in the s-czs host family was 3 wt%. Therefore, in these experiments, we fabricated PHOLEDs with a dopant concentration of 3 wt%. As the molecular weight strongly depends on the host material, the mol% of the dopant in the emitting layer also depends on the host material. This causes the observed difference in the average distance of the guest [S2]. However, Table S2 shows that differences in mol% have little influence on the operational stability. 4

Supplementary Section 3 Comparison of device characteristics between PHOLEDs and host-only devices. Fig. S3 (a) (b) Schematic of the device configuration. (c) External quantum efficiency current density curves of OLEDs. (d) Luminance time characteristics of an optimized device under a constant dc current density of approximately 1 ma cm 2. To evaluate the stability of TADF host on its own, we measured the stability of the hostonly device as shown in Fig. S3d. The configurations of host-only devices are almost the same as those of PHOLEDs, except for the existence of the dopant. As the efficiency of host-only devices is much lower than that of PHOLEDs, the stability was compared by setting the current density to approximately 1 ma cm 2, which corresponds to the current density in a PHOLED at approximately L0 = 1,000 cd m 2. Supplementary Section 4 5

Summary of PHOLED characteristics using PIC-TRZ2, DIC-TRZ and DIC-TRZ-Ph as the hosts. Figure S4-1 (a) Luminance (left, filled symbols) and current density (right, open symbols) voltage characteristics of PHOLEDs. (b) EQE current density curves of PHOLEDs. Inset: EL spectrum of PHOLEDs. (c) Luminance time characteristics for devices under a constant dc current with an initial luminance of 1,000 cd m 2. Fig. S4-2: Fluorescence and phosphorescence spectra of 6 wt%-tadf-material:ad Cz films. Red and blue lines represent fluorescence spectra at 77 K and phosphorescence spectra at 77 K, respectively. The black dotted line represents the supporting line used to determine S 1 and T 1 energy. 6

Table S4: Summary of the characteristics of PHOLEDs with different film thicknesses. Host Thickness of EML (nm) Thickness of TPBi (nm) Dopant concentration (wt%) EQE (%) [J = 1] Estimated LT50 (h) DIC-TRZ 25 35 1 21.9 11,000 DIC-TRZ 35 25 1 21.8 14,000 PIC-TRZ2 25 35 1 22.1 8,200 PIC-TRZ2 35 25 1 22 10,500 The device configuration was ITO/Clevios HIL 1.5 (30 nm)/α-npd (20 nm)/4dbtp3q (10 nm)/host:ir(mppy)3 (25 or 35 nm)/tpbi (25 or 35 nm)/lif/al. As the PHOLED with a thicker EML (35 nm) exhibited a longer LT50, we set the thickness of the EML to be 35 nm in the PHOLEDs using the host family comprising ICz. The dopant concentration was set to be 1 wt% in accordance with a previous report. [Ref. 20 in the manuscript] The J V characteristics of PHOLEDs using the host family comprising ICz, in which the thickness of the EML is 35 nm and the thickness of the TPBi is 25 nm, are more dependent on the host than those of PHOLEDs using the host family comprising s-czs (see Fig. S4-1a and Fig. 1c). This difference was caused by differences in the carrier transportability of the hosts. When we compare the device characteristics of these PHOLEDs, the operational lifetime of these PHOLEDs can be affected by differences in the carrier balance compared with the PHOLEDs using the host family comprising s-czs. However, we used all the data for analysis as we needed as much data as possible to systematically understand the characteristics of host-dependent PHOLEDs. The fluorescence and phosphorescence spectrum of DIC-TRZ and DIC-TRZ-Ph are also shown in Fig. S4-2. 7

Supplementary Section 5 The accuracy of the lifetime values (LT50s). Fig. S5: Luminance time characteristics for PHOLEDs using 2c as a host under a constant dc current with an initial luminance of 1,000 cd m 2. (a) PHOLED fabricated on April 01, 2016. (b) PHOLED fabricated on April 19, 2016. (c) Comparison of the two PHOLEDs. Almost all PHOLEDs are fabricated at least twice on different days, and the accuracy of the LT50 is checked. As shown in Fig. S5, the variation in estimated LT50 is quite small even in the most long-lived PHOLED using 2c as a host. Thus, the accuracy of the estimated LT50 is extremely high. 8

Supplementary Section 6 Summary of PHOLED characteristics using Cz-Ph-TRZ, CBP as the hosts. Figure S6-1 (a) Luminance (left, filled symbols) and current density (right, open symbols) voltage characteristics of PHOLEDs. (b) EQE current density curves of PHOLEDs. Inset: EL spectrum of PHOLEDs. (c) Luminance time characteristics for devices under a constant dc current with an initial luminance of 1,000 cd m 2. The operational lifetimes of the PHOLEDs using Cz-Ph-TRZ and 2c are compared with the operational lifetime of the PHOLED using CBP, which is conventional host material consists of carbazoles. We see from Fig. S6-1(c) that the operational stabilities of PHOLEDs using CBP and Cz-Ph-TRZ are almost the same, though Cz-Ph-TRZ consists of a carbazole and a triazine. The LT50 of the PHOLED, in which the triplet upconversion in host is impossible, are about 500 hours in this device configuration, where the dopant concentration is low. On the other hand, the LT50 of the PHOLED using 2c is about 20,000 hours. Similar results have been reported by several groups (see Ref. 17, 19, 20 in the manuscript). 9

Supplementary Section 7 Photophysical properties. Figure S7: Absorption spectrum of Ir(mppy) 3 in tetrahydrofuran solution (2 10 5 M) (broken line) and PL spectra of 6 wt%-tadf-host:ad Cz film. The spectral overlap integral was calculated from this Figure. Photophysical properties of the host that are related to kfret such as PL and PL were measured in a 6-wt%-TADF-host:Ad Cz film. Although both prompt and delayed 10

components were observed, we used the values related to the prompt components in the analysis. This is because the fluorescence process from S1 to S0 in a TADF host determines kfret. Since the following two energy transfer processes are FRET, the Förster radius (R0) in Table 1 was obtained from PL and the spectral overlap shown in Fig. S6. S1 (host) -> 1 MLCT (S1, dopant) S1 (host) -> 3 MLCT (T1, dopant). 11

Supplementary Section 8 Calculation of the maximum molecular radius (Rmax) of each molecule. Fig. S8: Optimized molecular structure of 2a and the coordinates of each atom. The distance between each atom and the original point was calculated using the Pythagorean theorem. 12

Table S8: Summary of the estimated maximum molecular radius (R max) of each molecule. Molecule Rmax (nm) 2a 1.51 2b 1.31 2c 1.22 2c-Ph 1.42 PIC-TRZ2 1.02 DIC-TRZ 0.93 DIC-TRZ-Ph 1.29 Ir(mppy)3 0.77 PtN7N 0.93 The distance between the centre of mass and the farthest hydrogen atom was calculated in the optimized structure, and the van der Waals' radius of the hydrogen atom was added to it. The coordinates of the optimized structure were obtained from the Gaussian09 program with B3LYP/6-31G(d,p) basis sets. One example of the results we calculated is shown in Fig. S8; the distance between the centre of mass and the farthest hydrogen was calculated in 2a. As the original point of the coordinates corresponds to the centre of mass in this calculation, the distance between the centre of mass and the farthest hydrogen atom can be calculated as shown in Fig. S8. 13

Supplementary Section 9 Host-dependent lifetime (LT80) versus kfret. Fig. S9. Host-dependent lifetime (LT80) versus kfret. 14

Supplementary Section 10 The device characteristics of PHOLEDs using TPyQB as the electron transporting layer (ETL) (Fig. S10-1 a, b and c) and PtN7N as the emitter dopant (Fig. S10-1 d, e and f). Fig. S10-1. The device characteristics of PHOLEDs using TPyQB as the ETL (Fig. S10-1 a, b and c) and PtN7N as the emitter dopant (Fig. S10-1 d, e and f). The device configuration was ITO/Clevios HIL 1.5 (30 nm)/α-npd (20 nm)/4dbtp3q (10 nm)/host:dopant (3 wt%, 25 nm)/etl (35 nm)/lif (1 nm)/al (100 nm) (see also Table S10). 15

Fig. S10-2. Absorption spectrum of PtN7N in tetrahydrofuran solution (2 10 5 M) (broken line) and PL spectra of 6 wt%-tadf-host:ad Cz film. Table S10: Summary of the configurations of PHOLEDs, PHOLED performances, parameters related to k FRET and the calculated k FRET. The spectral overlap is shown in Fig. S10-2. Host Dopant ETL PHOLED performances R0 (nm) EQE* LT50 (%) (hours) kfret (10 8 s 1 ) 2a Ir(mppy)3 TPyQB 14.3 265-4.42 2b Ir(mppy)3 TPyQB 16.7 1,700-6.68 2c Ir(mppy)3 TPyQB 17.9 3,000-10.0 2a PtN7N TPBi 11.8 270 2.43 1.5 2b PtN7N TPBi 12.3 1,500 2.41 2.2 2c PtN7N TPBi 15.2 3,000 2.43 3.1 *Measured at 1 ma cm 2 (corresponds to luminance of approximately 1,000 cd m 2 ). Estimated lifetime. The accuracy of the value is relatively high (see Supplementary Section 5) R 0: Estimated critical distance for the concentration quenching (Förster radius). k FRET: Estimated Förster transfer rate from host to Ir(mppy) 3. The data used for analysing the lifetime with respect to kfret is also shown (Table S10). The shorter lifetime of TPyQB-based PHOLEDs compared to TPBi-based PHOLEDs may be because of the poor stability of TPyQB [Ref. 25 in the manuscript]. 16

Reference S1. Fukagawa, H., Watanabe, K., Tsuzuki, T., Tokito, S. Highly efficient, deep-blue phosphorescent organic light emitting diodes with a double-emitting layer structure. Appl. Phys. Lett. 93, 133312 (2008). S2. Kawamura, Y., Brooks, J., Brown, J. J., Sasabe, H., Adachi, C. Intermolecular Interaction and a Concentration-Quenching Mechanism of Phosphorescent Ir(III) Complexes in a Solid Film. Phys. Rev. Lett. 96, 017404 (2006). 17