Supporting Information High Efficiency Inverted Planar Perovskite Solar Cells with Solution-Processed NiOx Hole Contact Xuewen Yin, Zhibo Yao, Qiang Luo, Xuezeng Dai, Yu Zhou, Ye Zhang, Yangying Zhou, Songping Luo, Jianbao Li,, Ning Wang,*, and Hong Lin*, State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China State Key Laboratory of Marine Resource Utilization in South China Sea, Materials and Chemical Engineering Institute, Hainan University, Haikou 570228, P. R. China *Corresponding E-mail: hong-lin@mail.tsinghua.edu.cn; wangninguestc@gmail.com S-1
Figure S1. Cross-sectional SEM images of the devices with different concentration perovskite precursors (1.25 M (a), 1.35 M (b), 1.45 M (c) and1.50 M (d), respectively.) (Blue vertical lines represent thicknesses of perovskite layers) S-2
Figure S2. The charge-transfer resistance obtained by EIS in figure 5b (Rct) as thickness of perovskite. S-3
Figure S3. Cross-sectional SEM images of NiOx films fabricated by spin-coating different times on FTO: 1 time (a), 2 times (b), 3 times (c) and 4 times (d), respectively. (Blue vertical lines represent thicknesses of NiOx films) Figure S4. SEM images of NiOx films fabricated by spin-coating different times on FTO: 1 time (a), 2 times (b), 3 times (c) and 4 times (d), respectively. S-4
Figure S5. Normalized PL spectra of the devices with different NiOx precursor spincoating times S-5
Figure S6. Jsc (a), Voc (b), FF (c) and PCE(d) distributions as the concentration of PCBM. S-6
Figure S7. XRD pattern of solar cell stored in air for 1500 h. S-7
Figure S8. Secondary electron image and Auger analysis of solar cell stored in air for 1500 h. S-8
Figure S9. Cross-sectional SEM and element of I mapping for fresh solar cell (a, b) and solar cell stored in air for 1500h (c, d) S-9
Table S1. The dynamic decay time parameter of the devices with different concentration perovskite precursors Decay τ1(ns) τ2(ns) 1.25 M 2.40 30.35 1.35 M 3.63 36.79 1.45 M 3.67 37.75 1.50 M 3.47 40.41 Table S2. The dynamic decay time parameter of the devices with spin-coating different times NiOx precursor Decay τ1(ns) τ2(ns) perovskite 2.16 41.35 1 time 1.61 37.12 2 times 1.82 32.85 3 times 1.94 34.98 4 times 1.92 40.37 S-10
Table S3 Summary on the performances and preparation methods of NiOx-based organic-inorganic hybrid perovskite solar cells and our devices are also included for comparison. The word non means the parameter was not presented in the paper. Device configuration Voc (V) Jsc (ma/cm 2 ) S-11 FF (%) PCE (%) Area (cm 2 ) Method/temperature Referen ce ITO/PLD-NiO/ CH3NH3PbI3/PCBM/LiF/Al 1.06 20.2 81.3 17.3 Non PLD/200 C 1 ITO/ALD-NiO/ CH3NH3PbI3/PCBM/Ag 1.04 21.87 72 16.40 0.14 ALD/300 C 2 ITO/Cu:NiO/ CH3NH3PbI3/Bis-C60/C60/Ag 1.05 21.60 77 17.8 0.0314 Combustion/150 C 3 ITO/ Cu:NiO / MA0.7FA0.3Pb(I0.1Br0.9)3 /PC61BM:C60(1:1)/Bis-C60/Ag 1.10 20.21 78 17.34 Non Spin-coating/550 C 4 ITO/NiOx/ CH3NH3PbI3 /PCBM/ Ag 1.07 20.58 74.8 16.47 0.07 Spin-coating/130 C 5 FTO/NiMgLiO/ CH3NH3PbI3/PCBM/Ti(Nb)Ox/Ag 1.072 20.62 74.8 16.2 1.02 Spray pyrolysis/500 C 6 FTO/NiO/DEA/ CH3NH3PbI3 xclx /PCBM/PN4N/Ag 0.95 20.90 80 15.90 Non Spin-coating/500 C 7 FTO/ NiOx / CH3NH3PbI3/PCBM /Ag 0.988 20.51 77.51 15.71 0.06 Spin-coating/350 C This Work FTO/NiO/ CH3NH3PbI3/PCBM/Ag 1.08 14.13 58 8.73 Non FTO/Cu:NiO/ CH3NH3PbI3/PCBM/Ag 1.11 18.75 72 15.40 Non Spin-coating/550 C 8 FTO/NiOx/ CH3NH3PbI3/PCBM/Ag 1.09 17.93 73.8 14.42 0.07 Spin-coating/500 C 9 FTO/NiO/NiO (np)/ CH3NH3PbI3/PCBM/BCP/Al 1.01 22.1 61.6 13.7 Non Sputtering 10 FTO/NiO/Meso-Al2O3/ CH3NH3PbI3/PCBM/BCP/Ag 1.04 18.0 72 13.5 0.09 Spray pyrolysis/ 500 C 11 glass/au:niox (e-beam evaporator)/ E-beam 1.02 13.04 77 10.24 Non CH3NH3PbI3/C60 /BCP/Al evaporator/500 C 12 ITO/NiOx/ CH3NH3PbI3/PCBM/Ag 1.02 20.0 63 12.7 0.14 Spin-coating/300 C 13
ITO/ NiO/meso-NiO/ CH3NH3PbI3/BCP/Al 0.96 19.8 61 11.6 Non Sputtering + spin coating/ 400 C 14 FTO/ NiO NCs/ CH3NH3PbI3 xclx /PCBM (1.5 wt% PS)/Al 1.07 15.62 64 10.68 Non Spin-coating/500 C 15 FTO/NiO/ CH3NH3PbI3/PCBM/Ag 1.10 15.17 59 9.84 Non Sputtering/ No heated 16 ITO/NiO/meso-NiO/ CH3NH3PbI3/BCP/Al 1.04 13.24 69 9.51 0.06 Spin-coating/400 C 17 FTO/NiO NCs/CH3NH3PbI3/PCBM/Au 0.882 16.27 63.5 9.11 Non Spin-coating/500 C 18 ITO/NiO/ CH3NH3PbI3 xclx /PCBM/BCP/Al 0.92 12.43 68 7.8 0.06 Spun-cast/ 300 C 19 ITO/NiO/ CH3NH3PbI3/PCBM/Al 1.05 15.4 48 7.6 0.0725 Spin-coating/350 C 20 FTO/NiO /CH3NH3PbI3 xclx /PCBM/Ag 0.786 14.2 65 7.26 0.07 Electrodeposited/ 350 C 21 FTO/ NiOx/ CH3NH3PbI3 xclx /PCBM/Au 0.798 18.23 47 6.4 Non Spin-coating/340 C 22 S-12
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