PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (NPN) Pbfree (RoHS compliant) package Qualified according AEC Q Type Marking Pin Configuration Package BCW6A BCW6B BCW6C BCW6D BCX7G BCX7H BCX7J BCX7K BAs BBs BCs BDs BGs BHs BJs BKs =B =B =B =B =B =B =B =B =E =E =E =E =E =E =E =E SOT SOT SOT SOT SOT SOT SOT SOT 79
Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO V BCW6... BCX7... 4 Collectorbase voltage V CBO BCW6... BCX7... 4 Emitterbase voltage V EBO Collector current I C Peak collector current, t p ms I CM Peak base current I BM Total power dissipation T S 7 C P tot mw Junction temperature T j Storage temperature T stg 6... C Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 4 K/W For calculation of R thja please refer to Application Note AN77 (Thermal Resistance Calculation) 79
Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V I C =, I B =, BCW6... I C =, I B =, BCX7... 4 Collectorbase breakdown voltage V (BR)CBO I C = µa, I E =, BCW6... I C = µa, I E =, BCX7... 4 Emitterbase breakdown voltage I E = µa, I C = Collectorbase cutoff current V CB = V, I E = V CB = 4 V, I E = V CB = V, I E =, T A = C, BCW6... V CB = 4 V, I E =, T A = C, BCX7... V (BR)EBO I CBO.. µa Emitterbase cutoff current V EB = 4 V, I C = DC current gain ) I C = µa, V CE = V, h FE grp. A/G I C = µa, V CE = V, h FE grp. B/H I C = µa, V CE = V, h FE grp. C/J I C = µa, V CE = V, h FE grp. D/K I C =, V CE = V, h FE grp. A/G I C =, V CE = V, h FE grp. B/H I C =, V CE = V, h FE grp. C/J I C =, V CE = V, h FE grp. D/K I C =, V CE = V, h FE grp. A/G I C =, V CE = V, h FE grp. B/H I C =, V CE = V, h FE grp. C/J I C =, V CE = V, h FE grp. D/K I EBO na h FE 4 8 8 6 8 4 46 7 46 6 79
DC Electrical Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Collectoremitter saturation voltage ) I C =, I B =. I C =, I B =. Base emitter saturation voltage ) I C =, I B =. I C =, I B =. Baseemitter voltage ) I C = µa, V CE = V I C =, V CE = V I C =, V CE = V Pulse test: t < µs; D < % V CEsat V BEsat V BE(ON) V.....7.8.8....6.7.78 4 79
AC Characteristics Transition frequency I C =, V CE = V, f = MHz Collectorbase capacitance V CB = V, f = MHz Emitterbase capacitance V EB =. V, f = MHz Shortcircuit input impedance I C =, V CE = V, f = khz, h FE grp. A/B I C =, V CE = V, f = khz, h FE grp. B/H I C =, V CE = V, f = khz, h FE grp. C/J I C =, V CE = V, f = khz, h FE grp. D/K f T MHz C cb. pf C eb 8 h e kω.7.6 4. 7. Opencircuit reverse voltage transf. ratio h e 4 I C =, V CE = V, f = khz, h FE grp. A/B. I C =, V CE = V, f = khz, h FE grp. B/H I C =, V CE = V, f = khz, h FE grp. C/J I C =, V CE = V, f = khz, h FE grp. D/K Shortcircuit forward current transf. ratio h e I C =, V CE = V, f = khz, h FE grp. A/B I C =, V CE = V, f = khz, h FE grp. B/H 6 I C =, V CE = V, f = khz, h FE grp. C/J I C =, V CE = V, f = khz, h FE grp. D/K Opencircuit output admittance I C =, V CE = V, f = khz, h FE grp. A/B I C =, V CE = V, f = khz, h FE grp. B/H I C =, V CE = V, f = khz, h FE grp. C/J I C =, V CE = V, f = khz, h FE grp. D/K Noise figure I C = µa, V CE = V, f = khz, f = Hz, R S = kω, h FE grp. A/K h e µs 8 4 F db 79
DC current gain h FE = ƒ(i C ) V CE = V Collectoremitter saturation voltage I C = ƒ(v CEsat ), h FE = 4 EHP EHP49 h FE C C C C C C Ι C....4 V CEsat V. Baseemitter saturation voltage I C = ƒ(v BEsat ), h FE = 4 Collector current I C = ƒ(v BE ) V CE = V EHP48 EHP C C C C C C..4.6.8 V.. V. V BE sat V BE 6 79
Collector cutoff current I CBO = ƒ(t A ) V CB = V CEmax Transition frequency f T = ƒ(i C ) V CE = parameter in V, f = GHz BO 4 na EHP f T MHz EHP47 max typ T A C Ι C Collectorbase capacitance C cb = ƒ(v CB ) Emitterbase capacitance C eb = ƒ(v EB ) Total power dissipation P tot = ƒ(t S ) pf 6 mw CCB(CEB) 9 8 7 Ptot 7 4 6 8 4 CEB 9 6 CCB 4 8 6 V V CB (V EB ) 4 6 7 9 C T S 7 79
Permissible Pulse Load P totmax /P totdc = ƒ(t p ) h parameter h e = ƒ(i C ) normalized V CE = V P P tot max tot DC t p = D T t p T EHP4 h e EHP D =....... h e h e V CE = V h e 6 4 s t p h e Ι C h parameter h e = ƒ(v CE ) normalized I C = Noise figure F = ƒ(v CE ) I C =., R S = kω, f = khz. EHP4 EHP h e = F db. h. h. h V V V CE V CE 8 79
Noise figure F = ƒ(f) V CE = V, Z S = Z Sopt Noise figure F = ƒ(i C ) V CE = V, f = Hz EHP6 EHP7 F db F db R S = MΩ kω kω Ω kω Noise figure F = ƒ(i C ) V CE = V, f = khz khz f Noise figure F = ƒ(i C ) V CE = V, f = khz EHP8 EHP9 F db F db RS = MΩ kω kω R S = MΩ kω kω Ω kω Ω kω 9 79
Package SOT BCW6..., BCX7... Package Outline +. ).4..9 ±..9 B C.9.4 ±.. MIN. MAX. ±.. MAX....8 MAX..8.... ±. A. M BC. M A Foot Print ) Lead width can be.6 max. in dambar area.8.8..9..9 Marking Layout (Example) EH s Manufacturer, June Date code (YM) Pin BCW66 Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.9. 8..6 Pin.. 79
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