Department of Electrical Engineering and Computer Sciences University of California, Berkeley. Final Exam: Friday, August 10, 2012

Similar documents
Department of Electrical Engineering and Computer Sciences University of California, Berkeley. Final Exam Solutions

ECE20B Final Exam, 200 Point Exam Closed Book, Closed Notes, Calculators Not Allowed June 12th, Name

6.012 Electronic Devices and Circuits Spring 2005

Designing Information Devices and Systems II Spring 2016 Anant Sahai and Michel Maharbiz Midterm 2

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

55:041 Electronic Circuits The University of Iowa Fall Exam 2

University of California at Berkeley College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences

'XNH8QLYHUVLW\ (GPXQG73UDWW-U6FKRRORI(QJLQHHULQJ. ECE 110 Fall Test II. Michael R. Gustafson II

ENGR4300 Fall 2005 Test 3A. Name. Section. Question 1 (25 points) Question 2 (25 points) Question 3 (25 points) Question 4 (25 points)

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION

'XNH8QLYHUVLW\ (GPXQG73UDWW-U6FKRRORI(QJLQHHULQJ. EGR 224 Spring Test II. Michael R. Gustafson II

EECS 141: FALL 05 MIDTERM 1

ECE2210 Final given: Fall 13

'XNH8QLYHUVLW\ (GPXQG73UDWW-U6FKRRORI(QJLQHHULQJ. EGR 224 Spring Test II. Michael R. Gustafson II

Test II Michael R. Gustafson II

Capacitors. Chapter How capacitors work Inside a capacitor

EE214 Early Final Examination: Fall STANFORD UNIVERSITY Department of Electrical Engineering. SAMPLE FINAL EXAMINATION Fall Quarter, 2002

Designing Information Devices and Systems I Summer 2017 D. Aranki, F. Maksimovic, V. Swamy Homework 5

ESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals

55:041 Electronic Circuits The University of Iowa Fall Final Exam

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.

GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering

Designing Information Devices and Systems II Fall 2017 Miki Lustig and Michel Maharbiz Homework 1. This homework is due September 5, 2017, at 11:59AM.

Section 5.4 BJT Circuits at DC

6.012 Electronic Devices and Circuits

Name: Grade: Q1 Q2 Q3 Q4 Q5 Total. ESE370 Fall 2015

ENGR4300 Fall 2005 Test 3S. Name solution. Section. Question 1 (25 points) Question 2 (25 points) Question 3 (25 points) Question 4 (25 points)

and V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS )

EECE 2150 Circuits and Signals, Biomedical Applications Final Exam Section 3

Lecture 15: MOS Transistor models: Body effects, SPICE models. Context. In the last lecture, we discussed the modes of operation of a MOS FET:

Designing Information Devices and Systems I Spring 2019 Midterm 2. Exam Location: Cory 521 (DSP)

Designing Information Devices and Systems I Fall 2015 Anant Sahai, Ali Niknejad Final Exam. Exam location: RSF Fieldhouse, Back Left, last SID 6, 8, 9

DON T PANIC! If you get stuck, take a deep breath and go on to the next question. Come back to the question you left if you have time at the end.

11.1 As mentioned in Experiment 10, sequential logic circuits are a type of logic circuit where the output of

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Oldham Fall 1999

ECE 6412, Spring Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120

CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130

EE 40: Introduction to Microelectronic Circuits Spring 2008: Midterm 2

ESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals

CARNEGIE MELLON UNIVERSITY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING DIGITAL INTEGRATED CIRCUITS FALL 2002

EECS 105: FALL 06 FINAL

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom

University of Toronto. Final Exam

Designing Information Devices and Systems I Summer 2017 D. Aranki, F. Maksimovic, V. Swamy Midterm 2. Exam Location: 100 Genetics & Plant Bio

EECS 270 Midterm 2 Exam Answer Key Winter 2017

CSE 140 Midterm 2 Tajana Simunic Rosing. Spring 2008

DC and Transient Responses (i.e. delay) (some comments on power too!)

E40M Review - Part 1

EECE 2150 Circuits and Signals Final Exam Fall 2016 Dec 16

Designing Information Devices and Systems I Fall 2017 Midterm 2. Exam Location: 150 Wheeler, Last Name: Nguyen - ZZZ

EE 16B Final, December 13, Name: SID #:

Name: Answers. Grade: Q1 Q2 Q3 Q4 Q5 Total. ESE370 Fall 2015

University of Maryland Department of Physics. Spring 2009 Final Exam 20. May (175 points) Post grades on web? (Initial, please) Yes No

Homework Assignment 08

Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science Circuits & Electronics Spring 2007.

ECE137B Final Exam. There are 5 problems on this exam and you have 3 hours There are pages 1-19 in the exam: please make sure all are there.

Written reexam with solutions for IE1204/5 Digital Design Monday 14/

Electronics II. Final Examination

ECE2210 Final given: Spring 08

Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science Electronic Circuits Fall 2000.

ECE 2210 Final given: Spring 15 p1

EE105 Fall 2014 Microelectronic Devices and Circuits

Mealy & Moore Machines

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution

Latches. October 13, 2003 Latches 1

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009

Designing Information Devices and Systems I Babak Ayazifar, Vladimir Stojanovic. This homework is due October 25, 2016, at 1PM.

GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL of ELECTRICAL & COMPUTER ENGINEERING FINAL EXAM. COURSE: ECE 3084A (Prof. Michaels)

Homework Assignment 11

EE 209 Spiral 1 Exam Solutions Name:

Homework 6 Solutions and Rubric

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

Examination paper for TFY4185 Measurement Technique/ Måleteknikk

Designing Information Devices and Systems I Spring 2019 Homework 11

ENGR-2300 Electronic Instrumentation Quiz 3 Fall 2013 Name Section. Question III (25 Points) Question IV (25 Points) Total (100 Points)

SCHOOL OF COMPUTING, ENGINEERING AND MATHEMATICS SEMESTER 1 EXAMINATIONS 2012/2013 XE121. ENGINEERING CONCEPTS (Test)

Digital Electronics Final Examination. Part A

ECE137B Final Exam. Wednesday 6/8/2016, 7:30-10:30PM.

ELECTRONIC SYSTEMS. Basic operational amplifier circuits. Electronic Systems - C3 13/05/ DDC Storey 1

Frequency Response Prof. Ali M. Niknejad Prof. Rikky Muller

6.012 MICROELECTRONIC DEVICES AND CIRCUITS

EE 435. Lecture 3 Spring Design Space Exploration --with applications to single-stage amplifier design

Bipolar Junction Transistor (BJT) - Introduction

EE371 - Advanced VLSI Circuit Design

University of Florida EEL 3701 Fall 2014 Dr. Eric. M. Schwartz Department of Electrical & Computer Engineering Wednesday, 15 October 2014

Electronics and Communication Exercise 1

For smaller NRE cost For faster time to market For smaller high-volume manufacturing cost For higher performance

4.4 The MOSFET as an Amp and Switch

Digital Logic: Boolean Algebra and Gates. Textbook Chapter 3

EECS 312: Digital Integrated Circuits Midterm Exam 2 December 2010

Two-Port Networks Admittance Parameters CHAPTER16 THE LEARNING GOALS FOR THIS CHAPTER ARE THAT STUDENTS SHOULD BE ABLE TO:

Designing Information Devices and Systems II Fall 2018 Elad Alon and Miki Lustig Discussion 5A

Electronics II. Final Examination

EE115C Digital Electronic Circuits Homework #4

Problem Set 4 Solutions

Bandwidth of op amps. R 1 R 2 1 k! 250 k!

ENGG 1203 Tutorial_9 - Review. Boolean Algebra. Simplifying Logic Circuits. Combinational Logic. 1. Combinational & Sequential Logic

Homework 3 Solution. Due Friday (5pm), Feb. 14, 2013

CSCI 2150 Intro to State Machines

Transcription:

Electrical Engineering 42/00 Summer 202 Instructor: Tony Dear Department of Electrical Engineering and Computer Sciences University of California, Berkeley Final Exam: Friday, August 0, 202 Last Name: First Name: SID: Discussion (circle one): 9-am (erry) 0-2pm (ohn) 2-2pm (William) 2-4pm (Dennis) Notes and Instructions. Fill out the information above as clearly and accurately as possible. 2. You have 0 minutes to complete this exam. 3. This exam contains five questions, on a total of sixteen pages (including this one). 4. Do all your work and box all answers on the provided paper; do not hand in loose papers. 5. None of the questions require long-winded calculations. Show your work clearly and concisely; partial credit will be given, but unclear or unnecessarily complicated work may be penalized. 6. Two sheets of notes may be used on this exam. 7. You may not communicate with anyone else during the course of the exam, nor are electronic computational devices allowed. Academic dishonesty policies will be enforced. 8. The staff wishes you the best of luck, both on this exam and in all your future endeavors. It s been an awesome semester! I have read all of the above instructions and agree to comply with them. All of the work on this exam is my own, and I had no prior knowledge of the exam contents. Signature: The logic gates and CMOS circuit look like they re about to commence battle. :P Question Q. Q. 2 Q. 3 Q. 4 Q. 5 Total Score /5 /5 /30 /20 /20 /00

This page intentionally left blank

. Diodes Have Capacitance?!?! Frustrated at how inaccurate all our linear diode models have been, ohn decides to cook up another one. The Zener diode below has a linear ON characteristic and a breakdown voltage V B like any other, but it is modeled as a capacitor C D when it is reverse-biased, or OFF. i D (A) Reverse-Bias (OFF) + i D v D = C 0 D BD OFF 2 ON v D (V) (a) (3 points) Let s first analyze the diode in its forward-bias (ON) mode. What is its linear circuit equivalent in this region of operation? Label the directions of v D and i D. (b) (3 points) ohn attaches this diode to a circuit as shown below. Ω 5u(t) A i D v D (t) + 3 Ω Evidently, the Zener diode is now reverse-biased. On the plot below, draw in the load line immediately after the current source turns on, i.e., t = 0 +. Be sure to label slopes and intercepts; your plot need not be to scale. i D (A) 2 0 0 v D (V) 3

Ω 5u(t) A i D v D (t) + 3 Ω (c) (3 points) Suppose the capacitance of the diode is C D = µf (0 6 F). What is the time constant τ associated with it? (d) (6 points) Sketch the voltage v D (t) across the diode as a function of time. Label key values on the v D axis. Remember that a charging capacitor reaches about 63% of its final value after one time constant τ. Don t forget to account for the diode s breakdown region! v D (t) 0 τ 2τ 3τ t 4

2. Moar Diode Madness William is having so much fun with diodes that he has constructed the following nightmare. Fortunately, you remember that you can always break the problem up into pieces that you can analyze separately. kω kω v in (t) C v + (t) + 3 V v o (t) C v L (t) R L For this entire problem, we can make the following assumptions: We are in AC steady-state, such that we can ignore all transient effects. The capacitances C are large, such that discharging effects are negligible. The op amp is ideal. All diodes are ideal with a turn-on voltage of 0 V. Finally, the input signal is v in (t) = 5 sin(t) V. (a) (5 points) Sketch the voltage v + (t). Be sure to label peak values. v + (t) t 5

kω v in (t) kω C v + (t) + 3 V v o (t) C v L (t) R L (b) (5 points) Find an expression for v o (t) in terms of v + (t) and v in (t). (c) (5 points) We re almost there! Given what you found above, sketch the voltage v L (t). Be sure to label peak or constant values. Remember that we don t care about transient effects! v L (t) t 6

3. FFFFFFFFUUUUUUUUUUU erry is trying to design an amplifier for the hundredth time. This time, he has turned to MOSFETs, specifically the common-source configuration. He has pulled up the following NMOS specs and designed the circuit as follows. 20 V =.0 A/V 2 V to = 2 V R D = kω v o (t) v in (t) V G + kω R S = 500 Ω (a) (0 points) Recall that the transconductance of the transistor is given by g m = 2(V GS V to ) = 2 I DS () Given that Tony has demanded g m = 20 ms (0.02 S), find the necessary bias V G that should be applied at the gate to achieve this. 7

20 V =.0 A/V 2 V to = 2 V R D = kω v o (t) v in (t) V G + kω R S = 500 Ω (b) (2 points) Draw the equivalent small-signal model of the circuit and show that the gain is given by A v = v o = g mr D = 20 2 (2) v in + g m R S Be sure to label all components and values. 8

(c) (8 points) Tony now insists that the gain be a function of the signal frequency. erry cleverly adds in a source capacitor as follows. 20 V =.0 A/V 2 V to = 2 V R D = kω v o (t) v in (t) V G + kω C S R S = 500 Ω The gain of the amplifier now becomes a complex transfer function, given by ( ) H(ω) = V o = g mr D = g mr D + jωr S C S V in + g m Z S + g m R S + jω R SC S 2 + jωr SC S + jωr +g S C S /0 mr S (3) Sketch the magnitude Bode plot for the transfer function. Be sure to label any cutoff frequencies and asymptotic magnitude values, as well as slopes. You may leave your plot labels in terms of R S C S for convenience. (Hint: 20 log 0 (2) = 6) H(ω) db ω 9

4. Introducing... the NYAN gate! Dennis has finally perfected the NYAN gate and is ready to add it to the current repertoire of logic gates. Its logic gate symbol is shown below: A B C N Unlike most other logic gates, the NYAN gate takes in exactly three inputs. The truth table showing all its possible input/output combinations is as follows: A B C N 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 (a) (2 points) Is the NYAN gate commutative? Briefly justify why or why not. (b) (6 points) Write the SOP Boolean expression for the output N in terms of the inputs A, B, and C. Simplify it into a sum of two terms only. 0

(c) (8 points) Implement your simplified expression from above with a logic gate circuit. Clearly indicate the inputs A, B, and C, as well as the output N. For full credit, use no more than 4 logic gates. (d) (4 points) Now help Dennis implement the NYAN gate using CMOS digital logic. He already has the pull-down network in; your job is to fill in the pull-up network above it. For full credit, use no more than 4 transistors (you may use inverted inputs). Pull-Down Network N GND

5. The Final Countdown The hours that you have left in EE42/00 are numbered, and you can t wait to finish this exam and GTFO to party away your Friday night and what s left of summer. But before you do so, you must help finish our timer circuit below to perform the final countdown. Recall that the behavior of the flip flop is as follows: Q n+ 0 Q n Q n 0 0 Q n 0 0 0 Q n (a) (4 points) The output of this circuit is given by Q = ( ) 2. Draw the state transition diagram for the given circuit above. 2

(b) (4 points) The first feature we want to add is the ability to pause the timer. Suppose we add in a new input P ; when P =, the timer keeps its current state and ignores the clock (Q should not reset to 0). Then when P = 0, the timer continues as usual. Given the original two flip flops below, make all the necessary connections to implement this new feature, using logic gates if necessary. P 3

(c) (4 points) Suppose the next feature we want to add is an LED (light-emitting diode) such that it lights up whenever our timer lands on the state Q = 0 2. The LED lights up when the signal line feeding into it is high (or ). Make all the necessary connections to implement this new feature, using logic gates if necessary. 4

(d) (8 points) You may have noticed that our timer doesn t have a very wide range, since it only has two bits of output. The last extension we want to do is to modify the timer so that it counts down from Q = 7. Make all the necessary connections to implement this new feature, using logic gates if necessary. (Notice that we have drawn in a third flip flop for you.) Q 2 Q 2 5

This page is not graded. If you finish early, feel free to use the space below to write, compose, rant, complain, draw, create, etc. We ll find it encouraging when grading your finals deep into the night. If you are thinking of friending us on Facebook, try to wait until after your grades are out. We re still your instructors until then. :P Pikachu has been joined by some fellow electric Pokémon! 6