BM86S PNP Silicon AF Transistor Array Precision matched transistor pair: I % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors omplementary type: BM86S B86S: For orientation in reel see package information below Pbfree (RoHS compliant) package Qualified according AE Q 6 B E 6 TR TR E B EHA77 Type Marking Pin onfiguration Package BM86S Ms =E =B = =E =B 6= SOT6 Maximum Ratings Parameter Symbol Value Unit ollectoremitter voltage V EO 6 V ollectoremitter voltage V ES 8 ollectorbase voltage V BO 8 Emitterbase voltage V EBO ollector current I ma Peak collector current, t p ms I M Total power dissipation P tot mw T S = Junction temperature T j Storage temperature T stg 6...
BM86S Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs K/W Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol Values Unit min. typ. max. D haracteristics ollectoremitter breakdown voltage V (BR)EO 6 V I = ma, I B = A ollectorbase breakdown voltage V (BR)BO 8 I = µa, I E = A ollectoremitter breakdown voltage V (BR)ES 8 I = µa, V BE = A Emitterbase breakdown voltage I E = µa, I = A V (BR)EBO ollectorbase cutoff current V B = V, I E = A V B = V, I E = A, T A = D current gain ) I = µa, V E = V I = ma, V E = V ollectoremitter saturation voltage ) I = ma, I B =. ma I = ma, I B = ma Base emitter saturation voltage ) I = ma, I B =. ma I = ma, I B = ma Baseemitter voltage ) I = ma, V E = V I = ma, V E = V Matching I B = µa, V E = V E =.V I B = µa, V E = V E =.V I BO h FE V Esat V BEsat V BE(ON) For calculation of R thja please refer to Application Note AN77 (Thermal Resistance alculation) Puls test: t < µs; D < % I µa. 9 mv 9 6 7 8 6 6 7 8 %
BM86S Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol Values Unit min. typ. max. A haracteristics Transition frequency f T MHz I = ma, V E = V, f = MHz ollectorbase capacitance cb pf V B = V, f = MHz Emitterbase capacitance eb 8 V EB =. V, f = MHz Shortcircuit input impedance h e. kω I = ma, V E = V, f = khz Opencircuit reverse voltage transf. ratio h e I = ma, V E = V, f = khz Shortcircuit forward current transf. ratio h e I = ma, V E = V, f = khz Opencircuit output admittance h e µs I = ma, V E = V, f = khz Noise figure I = µa, V E = V, f = khz, f = Hz, R S = kω F db
BM86S D current gain h FE = ƒ(i ) V E = V ollectoremitter saturation voltage I = ƒ(v Esat ), h FE = EHP8 EHP8 h FE Ι ma ma Ι.... V. V Esat Baseemitter saturation voltage I = ƒ(v BEsat ), h FE = Output characteristics I = ƒ(v E ), I B = parameter Ι ma EHP79 ma I 9 8 7 6 IB = µa IB = 6µA IB =µa IB = 8µA IB = µa IB = µa IB = 6µA IB = µa IB = 8µA IB = µa...6.8 V. V BEsat V VE
BM86S ollector current I = ƒ(v BE ) V E = Parameter ollector cutoff current I BO = ƒ(t A ) V BO = V A V V V na EHP8 I TA= V TA= V V Ι B max TA= typ 6.....6.7.8 V VBE T A Transition frequency f T = ƒ(i ) V E = parameter in V, f = GHz ollectorbase capacitance cb = ƒ(v B ) Emitterbase capacitance eb = ƒ(v EB ) f T MHz EHP78 pf B(EB) 9 8 7 6 EB ma Ι B 8 6 V V B (V EB )
BM86S Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) mw K/W Ptot 7 7 RthJS....... D = 6 7 9 T S 6 s t p Permissible Pulse Load P totmax /P totd = ƒ(t p ) Ptotmax/PtotD D =....... 6 s t p 6
BM86S Definition of matching I = (I I )/I $ # " 6 6! >?? 8? A 8? A 7
Package SOT6 BM86S Package Outline ±. +... 6 6x. M. MAX...9 ±. A Pin marking.6.6.±.. MIN. +... Foot Print..9.6.7.6.6 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer, June Date code (Year/Month) Pin marking Laser marking BR8S Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel For symmetric types no defined Pin orientation in reel... 8. ±.. M A Pin marking.. 8
BM86S Edition 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9