Massachusetts Institute of Technology Department of Materials Science and Engineering

Similar documents
Problem Solving 3: Calculating the Electric Field of Highly Symmetric Distributions of Charge Using Gauss s Law

5. Defects Thermal defects Planar defects Linear defects Point defects stochiometric compounds Schottky defects Anti-Schottky defects

Introduction into defect studies. in ceramic materials(iii) Structure, Defects and Defect Chemistry. Z. Wang. January 18, 2002

Topics to discuss...

Electrons, Holes, and Defect ionization

Chemical Reaction between Solids x 2 = Kt

Table of Contents. Foreword... Introduction...

AP Physics C. Gauss s Law. Free Response Problems

Chapter 4. Electrostatic Fields in Matter

Chapter 21 Chapter 23 Gauss Law. Copyright 2014 John Wiley & Sons, Inc. All rights reserved.

Chemical Reaction Engineering Prof. Jayant Modak Department of Chemical Engineering Indian Institute of Science, Bangalore

Volumes of Solids of Revolution. We revolve this curve about the x-axis and create a solid of revolution.

Today we begin the first technical topic related directly to the course that is: Equilibrium Carrier Concentration.

E. not enough information given to decide

Chapter 22 Gauss s Law. Copyright 2009 Pearson Education, Inc.

Transient Heat Conduction in a Circular Cylinder

Chapter 22 Gauss s Law. Copyright 2009 Pearson Education, Inc.

Phys102 Second Major-181 Zero Version Coordinator: Kunwar, S Monday, November 19, 2018 Page: 1

One dimensional steady state diffusion, with and without source. Effective transfer coefficients

CHAPTER 4 IMPERFECTIONS IN SOLIDS PROBLEM SOLUTIONS

Slowing down the neutrons

Chapter 22. Dr. Armen Kocharian. Gauss s Law Lecture 4

Chapter 24. Gauss s Law

Homework 4 PHYS 212 Dr. Amir

University of Rome Tor Vergata

HEAT TRANSFER 1 INTRODUCTION AND BASIC CONCEPTS 5 2 CONDUCTION

Chapter 23: Gauss Law. PHY2049: Chapter 23 1

4. CHEMICAL EQUILIBRIUM

Chapter 23. Gauss Law. Copyright 2014 John Wiley & Sons, Inc. All rights reserved.

collisions of electrons. In semiconductor, in certain temperature ranges the conductivity increases rapidly by increasing temperature

Electricity & Magnetism Lecture 4: Gauss Law

Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science Electric Machines

Physics 114 Exam 1 Fall 2016

ECE 250 Electronic Devices 1. Electronic Device Modeling

(a) What are the probabilities associated with finding the different allowed values of the z-component of the spin after time T?

Flux. Flux = = va. This is the same as asking What is the flux of water through the rectangle? The answer depends on:

1 One-Dimensional, Steady-State Conduction

Version: A. Earth s gravitational field g = 9.81 N/kg Mass of a Proton m p = kg

Oxide growth model. Known as the Deal-Grove or linear-parabolic model

VU Mobile Powered by S NO Group All Rights Reserved S NO Group 2012

V. Electrostatics Lecture 24: Diffuse Charge in Electrolytes

Chapter 23 Term083 Term082

Effective masses in semiconductors

Physics 208, Spring 2015 Exam #1

3. Consider a semiconductor. The concentration of electrons, n, in the conduction band is given by

Question Answer Marks Guidance 1 (a) (i)

EE301 Electronics I , Fall

Ch. 2: Energy Bands And Charge Carriers In Semiconductors

Physics 114 Exam 1 Spring 2013

Model Building An Introduction to Atomistic Simulation

Ph.D. QUALIFYING EXAMINATION PART A. Tuesday, January 3, 2012, 1:00 5:00 P.M.

Lecture D Steady State Heat Conduction in Cylindrical Geometry

Interphase Mass Transfer see Handout. At equilibrium a species will distribute (or partition ) between two phases.

Math Review for Exam Compute the second degree Taylor polynomials about (0, 0) of the following functions: (a) f(x, y) = e 2x 3y.

Name(s) with Lab section in Group. How do we use the model of the electronic structure of the atom to understand periodic trends of the elements?

Gauss s Law. Name. I. The Law: , where ɛ 0 = C 2 (N?m 2

Quick Questions. 1. Two charges of +1 µc each are separated by 1 cm. What is the force between them?

Exam 1 Solution. Solution: Make a table showing the components of each of the forces and then add the components. F on 4 by 3 k(1µc)(2µc)/(4cm) 2 0

Problem Solving 1: The Mathematics of 8.02 Part I. Coordinate Systems

MAGNETIC NOZZLE PLASMA EXHAUST SIMULATION FOR THE VASIMR ADVANCED PROPULSION CONCEPT

Electrical Conduction in Ceramic Materials 1 Ref: Barsoum, Fundamentals of Ceramics, Ch7, McGraw-Hill, 2000

Semiconductors. Semiconductors also can collect and generate photons, so they are important in optoelectronic or photonic applications.


HEAT CONDUCTION USING GREEN S FUNCTIONS

INTRODUCTION TO THE DEFECT STATE IN MATERIALS

Potential & Potential Energy

PHYS 241 EXAM #1 October 5, 2006

Coordinates 2D and 3D Gauss & Stokes Theorems

Defects. Defects. Kap. 3 States of aggregation. Perfect Crystal

Electric flux. Electric Fields and Gauss s Law. Electric flux. Flux through an arbitrary surface

Electric Field. Electric field direction Same direction as the force on a positive charge Opposite direction to the force on an electron

Nucleation rate (m -3 s -1 ) Radius of water nano droplet (Å) 1e+00 1e-64 1e-128 1e-192 1e-256

Introduction. Statement of Problem. The governing equations for porous materials with Darcy s law can be written in dimensionless form as:

3. A solid conducting sphere has net charge of +6nC. At electrostatic equilibrium the electric field inside the sphere is:

Defect Ch em Ch istry 1

Modified Maxwell-Garnett equation for the effective transport coefficients in inhomogeneous media

Steady-state diffusion is diffusion in which the concentration of the diffusing atoms at

Chapter 2: Heat Conduction. Dr Ali Jawarneh Department of Mechanical Engineering, Hashemite University

Physics (

Gauss s Law & Potential

Supporting Information for Conical Nanopores. for Efficient Ion Pumping and Desalination

ECE 142: Electronic Circuits Lecture 3: Semiconductors

5 GRAVITATION Last Updated: July 16, 2012

1. Electricity and Magnetism (Fall 1995, Part 1) A metal sphere has a radius R and a charge Q.

Electro - Principles I

Thermodynamics 1. Lecture 7: Heat transfer Open systems. Bendiks Jan Boersma Thijs Vlugt Theo Woudstra. March 1, 2010.

Lecture 13: Electromagnetic Theory Professor D. K. Ghosh, Physics Department, I.I.T., Bombay. Poisson s and Laplace s Equations

Physics 202, Lecture 3. The Electric Field

Introduction to Semiconductor Physics. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

Prototype Instabilities

Review: Conduction. Breaking News

UNIVERSITY OF MISSOURI-COLUMBIA PHYSICS DEPARTMENT. PART I Qualifying Examination. January 20, 2015, 5:00 p.m. to 8:00 p.m.

Symmetry in Monte Carlo. Dennis Mennerdahl OECD/NEA/NSC/WPNCS/AMCT EG, Paris, 18 September 2014

Collision Rates, Mean Free Path, and Diffusion. Chemistry B

Stabilization of sawteeth in tokamaks with toroidal flows

Q ( q(m, t 0 ) n) S t.

Plasma Physics Prof. V. K. Tripathi Department of Physics Indian Institute of Technology, Delhi

Thermal and Statistical Physics Department Exam Last updated November 4, L π

Chapter 21: Gauss law Tuesday September 13 th. Gauss law and conductors Electrostatic potential energy (more likely on Thu.)

Photoionized Gas Ionization Equilibrium

Transcription:

Massachusetts Institute of Technology Department of Materials Science and Engineering 3.05 Thermodynamics and Kinetics of Materials Fall 003 November 7, 003 We are looking at the incorporation of Al 3 into. Let s first start by writing the incorporation reaction as follows: Al 3 Al +3 + V Note that this is just one possible reaction. There are many other ways you could incorporate alumina into magnesia, creating different types of defects in each case. Now we need some real data to figure out which type of defect is most common in. According to Physical Ceramics by Chiang, et. al. the dominant defects in are Schottky defects. The reaction for the formation of Schottky defects is: null V + V with a corresponding equilibrium relationship: f K eq = V [V ]=exp G S kt We now have to account for charge neutrality, taking into consideration both the extrinsic defects (namely the impurities) and the intrinsic Schottky defects. V =[V ]+ Al Here is where I made the error. The more interesting case is to look at how the cation vacancy concentration depends on the impurity levels and temperature. However, in class I continued on from this point looking at the anion vacancies. My analysis was incorrect and will now present both solutions correctly. 1 Cation Vacancy For the cation vacancy concentration, namely V ( 1 ) K eq = V V Al, we can use the neutrality condition to get: 1 V V Al K eq =0 We can now solve this quadratic equation for V yielding:

1 V = Al 4 + Al +16K eq 4 This relationship gives us V but the term K eq can be rewritten to give us a better physical understanding of the solution. Since we know in PURE (with only Schottky defects), the following is true: K eq = V [V ] And from charge neutrality in the pure crystal: V =[V ] Thus, K eq = V pure Now we have a relation that relates K eq to something more physical (the cation vacancy concentration in the pure crystal). We now go back to our original problem and get: 1 V = Al + Al +16 V 4 4 pure From this we can look at the different temperature regimes to understand variation in V. High Temperature V >> Al V V pure pure Low Temperature V Al << Al V 1 pure So at high temperatures the cation vacancy concentration is dominated by the intrinsic Schottky defects and at low temperatures its dominated by the vacancy creation from the impurity addition. Anion Vacancy Now let us consider the case of the anion vacancies which I attempted to do in recitation. We can start with the same two tools, the Schottky equilibrium statement and charge neutrality. K eq = V [V ] V =[V ]+ Al This time we will solve for [V ]. ( 1 ) K eq = [V ]+ Al [V ]

Solving this equation for [V [V ] + 1 Al M g [V ] Keq =0 ] yields (this is where I made the error): 1 [V ]= Al M g + Al +16K eq 4 4 Using the same a similar substitution as in the previous case, we can eliminate K eq (K eq =[V. ] pure 1 [V ]= Al 4 M 4 g + Al +16[V ] pure Again, let s look at the limits at high and low temperature: High Temperature [V ] pure >> Al [ [V ] ] [V ] pure Low Temerature [V << Al [V ] 0 ] pure M g This makes sense since at low temperatures there are very few intrinsic defects and the only contributions to the concentration of anion vacancies can come from the incorporation of the impurity. However, no oxygen vacancies are created when alumina is added. Please come see me if this explanation is not clear. Again I would like to thank those people who brought this error to my attention and I am very sorry for any confusion my mistakes might have caused.

5. Find an expression for the steady-state concentration profile during the radial diffusion of a diffusant through a cylindrical shell of thickness, R, and inner radius,, in which the diffusivity is a function of radius D(r). The boundary conditions are c(r = )=c in and c( r = + R) =c out. Solution. The gradient operator in cylindrical coordinates is 1 = ê r + ê θ + ê z (5.8) r r θ z The divergence of a flux J in cylindrical coordinates is J = 1 (rj r) 1 J θ + + J z r r r θ z (5.83) Therefore, the steady-state, radially symmetric, diffusion equation becomes ( c ) 0= rd(r) (5.84) r r

which can be integrated twice to give r dρ c(r) = c in + a 1 (5.85) ρd(ρ) The integration constant a 1 is determined by the boundary condition at + R: a 1 = out c c in + R dρ ρd(ρ) (5.86) 5.3 Find the steady-state concentration profile during the radial diffusion of a diffusant through a bilayer cylindrical shell of inner radius,, where each layer has thickness R/ and the constant diffusivities in the inner and outer layers are D in and D out. The boundary conditions are c(r = ) = c in and c( r = + R) =c out. Will the total diffusion current through the cylinder be the same if the materials which make up the inner and outer shells are exchanged? Assume that the concentration of the diffusant is the same in the inner and outer layers at the bilayer interface. Solution. The concentration profile at the bilayer interface will not have continuous derivatives. Break the problem up into separate diffusion problems in each layer and then impose the continuity of flux at the interface. Let the concentration at the bilayer interface be c. Inner region: r + R Using Eq. 5.86, c in (r) = ( c c in The flux at the bilayer interface is + R/ ) R r in + c in (5.87) J = D in ( c c in 1 ) (5.88) + R/ + R/ R r uter region: + + R out c out c r c (r) = R in + R/ + c ; (5.89) + R + R/ The flux at the bilayer interface is J c out c = D out 1 + R/ + R + R/ (5.90) Setting the fluxes at the interfaces equal and solving for c : c = in in α out c out + α c αout + α in (5.91)

where D α out ( out ) ; α in ( D in ) + R + R/ (5.9) + R/ Putting Eq. 5.91 into Eqs. 5.87 and 5.89 yields the concentration profile of the whole cylinder. The total current diffusing through the cylinder (per unit length) is ( c in I = π + R ) J = πd in c (5.93) + R/ Using Eq. 5.91, α out c out c in c c in = (5.94) α out + α in If everything is kept constant except D in and D out,use of Eq. 5.94 in Eq. 5.93 shows that D in D out I (5.95) α 1 D out + α D in where α 1 and α are constants. Clearly, I will be different if the materials making up the inner and outer shells are exchanged and the values of D out and D in are therefore exchanged. This contrasts with the result for the two adjoining flat slabs in Exercise 5.1.